High Precision Frequency Synthesizer Based on Mems Piezoresistive Resonator

Total Page:16

File Type:pdf, Size:1020Kb

High Precision Frequency Synthesizer Based on Mems Piezoresistive Resonator T1D.005 HIGH PRECISION FREQUENCY SYNTHESIZER BASED ON MEMS PIEZORESISTIVE RESONATOR K.L. Phan1, T. van Ansem1, C. van der Avoort1, J.T.M. van Beek1, M.J. Goossens1, S. Jose2, R.J.P. Lander3, S. Menten1, T. Naass1, J. Sistermans2, E. Stikvoort1, F. Swartjes2, K. Wortel1, and M.A.A. in 't Zandt1 1Research & Development - NXP Semiconductors, Eindhoven, the NETHERLANDS 2Operations, NXP Semiconductors, Nijmegen, the NETHERLANDS 3Research & Development - NXP Semiconductors, Leuven, BELGIUM ABSTRACT middle of the structure. The heads of the dog-bone face In this paper, we present a detailed description of a two electrodes called the gate, over small gaps (g) of MEMS frequency synthesizer product, including the 200nm. The resonator is actuated electrostatically by a principle, processing, system architecture, and reliability combination of a DC voltage (VDC) and an AC voltage and characterization results. The synthesizer is based on a (vin) applied on the gate (Figure 1, right), which drives the MEMS piezoresistive dog-bone shaped resonator, having resonator into the extensional symmetrical resonance a resonant frequency of 56MHz, and a Q-factor of mode shape. To sense the vibration, a DC bias current >40,000. Using a specific temperature compensation (Id) is sent though the beams via the anchors, which are algorithm, the output frequency can be kept stable within also called the source and drain terminals. Thanks to the ±20ppm over an operating temperature from -20°C to piezoresistance effect, resistance of the beams is +85°C. Jitter over a bandwidth from 12kHz to 20MHz is modulated by their strain, which results in an AC signal typically 2.96ps. The product has been proven to be voltage at the drain. manufacturable using standard industrial processes, and to input (gate) Id output be reliable against various stress and life-time tests. gap v+Vin dc e (drain) d o tr anchor c e gap L l KEYWORDS e MEMS, piezoresistive resonator, frequency b e synthesizer, thin-film capping, reliability, fractional-N d o anchor tr PLL, temperature compensation, phase noise c le μ e g 10 m source (b) INTRODUCTION Figure 1: Left: SEM image of a dog-bone resonator, MEMS oscillators are considered a disruptive taken before the thin-film cap was created. During technology with the potential to replace quartz crystal resonance, the two heads of the dog-bone structure oscillators (XOs) for electronics. So far, MEMS-based vibrate laterally as shown by the arrows. Right: resonant frequency synthesizers have met all the requirements with mode-shape and electrical connections of the resonator. respect to phase noise, jitter, temperature stability, power The color map shows lateral strain during vibration. consumption, and reliability for the mainstream of 1 to 125 MHz XO segment, which covers high-volume Electrically, the resonator can be modeled as a field- applications including consumer electronics and effect transistor in the linear region (small signal model), computing [1, 2]. Unlike its peers [3, 4], NXP which has a frequency selection property [5-7]. The Semiconductors has been working on a unique oscillator transconductance gm of the resonator can be written as: concept based on piezoresistive MEMS resonators [5-7]. g g (ω) = m0 (1) This type of resonators overcomes the classical issue of m −ω 2 ω 2 + ω ω weak electro-mechanical coupling at high resonance 1 / 0 j /(Q 0 ) frequency, which is encountered in conventional ε hbKβ g = 0 I V (2) capacitive MEMS resonators. In this paper, a detailed m0 g 2 Lk d g description of NXP’s mature MEMS frequency ε synthesizer product, including the principle, processing, in which, 0 is the permittivity of vacuum, h is the system architecture, and reliability and characterization thickness of the resonator, b is the width of the heads, L is results, is presented. The product has been proven to be the length of the beams, K is the piezoresistive gauge manufacturable using standard industrial processes. factor of silicon, β is the ratio of strain in the beams to the total strain in the entire length of the resonator during PIEZORESISTIVE MEMS RESONATOR vibration, k is the stiffness of the resonator, Vg is the DC ω ω The heart of our frequency synthesizer is a MEMS bias voltage across the gaps, and 0 are the frequency dog-bone shaped resonator, having a resonant frequency of the signal and of the resonant frequency, respectively, of 55.8MHz, made in a 1.5μm-thick SOI layer (see Figure Q is the quality factor. The numerator of Eq. (1), gm0, 1, left). The dog-bone resonator consists of two describes the transconductance of the resonator symmetrical heads, connected together by four beams, irrespective of frequency, and the denominator describes which are attached to the substrate at two anchors at the the frequency selection of the resonator, which is similar 978-1-4673-5983-2/13/$31.00 ©2013 IEEE 802 Transducers 2013, Barcelona, SPAIN, 16-20 June 2013 to a RLC resonant circuit. At resonance (ω=ω0), the The complete synthesizer product contains a MEMS transconductance becomes –jgm0Q, which implies that it resonator die, stacked on an ASIC die (CMOS circuitry of has the maximum amplitude, and the resonator behaves the frequency synthesizer), overmolded inside a standard 3 like an inductor. There is a 90° phase shift between the 4-pin SMD plastic package measuring 5×3.2×0.85mm AC output current and input voltage. Unlike its (see Figure 4), using all standard packaging processes at capacitive rival, the transconductance of the piezoresistive NXP’s back-end fabs. resonator can be “boosted” by increasing not only the bias Q-factor change voltage V , but also the bias current I , see Eq. (2), which g d -4000 -2000 0 2000 4000 results in a large output current at resonance and hence can easily be combined with an amplifier in an oscillation 99 loop. Furthermore, the output current does not depend on resonator size and makes this concept suitable for 90 realizing high frequency oscillators. 70 FABRICATION 50 The MEMS resonator is capped in vacuum using 30 NXP’s proprietary thin-film capping technology, which is a low-temperature (<400°C) and low-cost CMOS- 10 Freq. change, UHAST Cumulative percentage Q change, UHAST compatible process. Figure 2 shows a schematic cross- Freq. change, HTSL section of a capped resonator. The process starts with 1 Q change, HTSL patterning and release etch of the MEMS resonator in a -4 -2 0 2 4 SOI wafer. Next, a sacrificial layer is deposited and Frequency change (ppm) patterned to form the vacuum cavity shape. A PECVD silicon nitride capping layer is subsequently deposited, Figure 3: Cumulative distribution of resonant frequency followed by contact and release hole etching. In the next change (in ppm) and Q-factor change of dog-bone step, the sacrificial layer is etched through the release resonators after 96hrs of UHAST (at 130°C/85%RH) and holes to form the cavity, and after that, the cavity is sealed 168hrs of HTSL (at 200°C). by depositing and patterning a plug layer at low pressure. The cap is subsequently reinforced by an extra oxide/nitride double layer. Finally contact holes are etched and metallization is made to make contact pads. The cavity under the cap can sustain <40mbar of pressure, which is enough to enable resonance of a quality factor of >40,000. Reinforcement Plug Resonator Figure 4: Complete frequency synthesizer assembled in a layer Cap Actuation leadless 4-pin plastic package. Left: picture of a gaps Vacuum cavity decapped product, showing a stack of a MEMS resonator die glued on top of an ASIC die. Middle (and right): SOI bottom (and top) view of the product. Buried oxide Handle wafer FREQUENCY SYNTHESIZER Figure 2: Schematic cross-section of a thin-film capped Figure 5 shows the top-level system architecture of resonator. our frequency synthesizer. Basically, the system consists of an oscillator core connected to the resonator, a charge- The thin-film cap has been proven to yield excellent pump to generate a DC voltage bias for the resonator, a robustness against various standard accelerated stress fractional-N Phase-Lock-Loop (frac-N PLL), a dedicated tests, such as Unbiased Highly Accelerated Steam Test block for temperature compensation, an output buffer, a (UHAST), High Temperature Storage Life (HTSL), digital block with an embedded memory, and a number of Temperature Cycling (TMCL), as well as the standard high-performance low-dropout regulators (LDOs). grinding, dicing and overmolding packaging process with The resonance of the MEMS resonator is maintained a peak pressure of 80bar. As examples, Figure 3 shows by the oscillator core consisting of a two-stage amplifier, results of a UHAST test (at 130°C and 85% relative which amplifies the AC voltage swing at the drain of the resonator and feeds back the amplified signal to its gate. humidity, for 96hrs) and HTSL test (at 200°C for 168hrs), ° performed on full 8-inch wafers. The resonant frequency The phase of the feed-back signal shifted by +100 , in ° change after the tests has been found to be below 2ppm, which +90 is needed for compensating the phase shift of which is within the accuracy of the measurement setup. the piezoresistive resonator and +10° is for compensating After the tests, majority (99%) of devices show parasitic capacitance coming from the resonator structure insignificant change (<7%) in the Q factor, which and bond-wires. The resonator is biased at VDC= -5V indicates that the cavity remains hermetic and outgassing (supplied by the charge pump) at the gate, and Id= 1.5mA within the cavity is not significant. from the drain to the source.
Recommended publications
  • Sea 222 Operator's Manual
    I SEA 222 OPERATOR'S MANUAL Featuring a unique "softouch" keypad, the SEA 222 is as easy to operate as a microwave oven. Just follow the directions in this booklet. The "brain" of the SEA 222 is divided into two parts: 1. 290 factory programmed frequency pairs selectable by channel number from EPROM memory. 2. 100 channels of "scratch pad" memory for front panel programming and recall (Note: 10 of these channels are "EMERGENCY" channels). When operating your SEA 222 please note: 1. Any two-digit key stroke followed by "enter" will recall user-programmed channels 10-99; 2. Any 3 and 4-digit key stroke followed by "enter" recalls factory -pro­ grammed channels. - ---- - - A UNIT OF DATAMARINE INTERNATIONAL, INC. I ( ( FRONT PANEL CONTROLS: DISPLAY: The eight-digit alphanumeric display provides the operator with frequency and channel data. 4 x 4 KEYPAD 16 keys allow the operator to communicate with the computer which controls radio functions. For simple operation, an "operator friendly" software package is used in conjunction with the display. All of the keys are listed below. ENT Enters previously keyed data into the computer. Number Keys Keys numbered 0 through 9 enter required numerical data into the computer. (Arrows) These keypads permit receiver tuning up or down in 100 Hz ..... steps. CH/FR Allows the operator to display either channel number or the frequency of operation. Example: pressing this key when the display reads "CHAN 801" causes the display to indicate the receiver operating frequency 'assigned to channel number 801 (8718.9 KHz). SQL Activates or deactivates the voice operated squelch system.
    [Show full text]
  • MC145151-2 and MC145152-2 Two-Way Radios Amateur Radio Electrical Characteristics
    Freescale Semiconductor MC145151-2/D Technical Data Rev. 5, 12/2004 MC145151-2 MC145152-2 28 28 1 1 MC145151-2 and Package Information P Suffix DW Suffix MC145152-2 Plastic DIP SOG Package Case 710 Case 751F PLL Frequency Synthesizers Ordering Information (CMOS) Device Package MC145151P2 Plastic DIP MC145151DW2 SOG Package The devices described in this document are typically MC145152P2 Plastic DIP used as low-power, phase-locked loop frequency MC145152DW2 SOG Package synthesizers. When combined with an external low-pass filter and voltage-controlled oscillator, these devices can Contents provide all the remaining functions for a PLL frequency 1 MC145151-2 Parallel-Input (Interfaces with synthesizer operating up to the device's frequency limit. Single-Modulus Prescalers) . 2 For higher VCO frequency operation, a down mixer or a 1.1 Features . 2 prescaler can be used between the VCO and the 1.2 Pin Descriptions . 3 synthesizer IC. 1.3 Typical Applications . 6 2 MC145152-2 Parallel-Input (Interfaces with These frequency synthesizer chips can be found in the Dual-Modulus Prescalers) . 7 following and other applications: 2.1 Features . 7 2.2 Pin Descriptions . 8 CATV TV Tuning 2.3 Typical Applications . 10 AM/FM Radios Scanning Receivers 3 MC145151-2 and MC145152-2 Two-Way Radios Amateur Radio Electrical Characteristics . 12 4 Design Considerations . 18 OSC ÷ R 4.1 Phase-Locked Loop — Low-Pass Filter Design . 18 CONTROL φ LOGIC 4.2 Crystal Oscillator Considerations . 19 4.3 Dual-Modulus Prescaling . 21 ÷ A ÷ N 5 Package Dimensions . 23 ÷ P/P + 1 VCO OUTPUT FREQUENCY Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
    [Show full text]
  • A Multi-Band Phase-Locked Loop Frequency Synthesizer
    A MULTI-BAND PHASE-LOCKED LOOP FREQUENCY SYNTHESIZER A Thesis by SAMUEL MICHAEL PALERMO Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE August 1999 Major Subject: Electrical Engineering A MULTI-BAND PHASE-LOCKED LOOP FREQUENCY SYNTHESIZER A Thesis by SAMUEL MICHAEL PALERMO Submitted to Texas A&M University in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Approved as to style and content by: _____________________________ _____________________________ José Pineda de Gyvez Edgar Sánchez-Sinencio (Chair of Committee) (Member) _____________________________ _____________________________ Sherif H. K. Embabi Duncan M. H. Walker (Member) (Member) _________________________ Chanan Singh (Head of Department) August 1999 Major Subject: Electrical Engineering iii ABSTRACT A Multi-Band Phase-Locked Loop Frequency Synthesizer. (August 1999) Samuel Michael Palermo, B.S., Texas A&M University Chair of Advisory Committee: Dr. José Pineda de Gyvez A phase-locked loop (PLL) frequency synthesizer suitable for multi-band transceivers is proposed. The multi-band PLL frequency synthesizer uses a switched tuning voltage- controlled oscillator (VCO) that covers a frequency range of 111 to 297MHz with a low average conversion gain of 41.71MHz/V. A key design feature of the multi-band PLL frequency synthesizer is that the VCO tuning switches are controlled only by the normal loop dynamics. No external control is needed for the synthesizer to switch to different bands of operation. The multi-band PLL frequency synthesizer is implemented in a standard 1.2µm CMOS technology using a 2.7V supply. The frequency synthesizer has a measured frequency range of 111 to 290MHz with phase noise up to –96dBc/Hz at a 50kHz carrier offset.
    [Show full text]
  • LMX2541 Ultra-Low Noise Pllatinum Frequency Synthesizer with Integrated VCO Datasheet (Rev. J)
    Product Sample & Technical Tools & Support & Folder Buy Documents Software Community LMX2541 SNOSB31J –JULY 2009–REVISED DECEMBER 2014 LMX2541 Ultra-Low Noise PLLatinum Frequency Synthesizer With Integrated VCO 1 Features 3 Description The LMX2541 device is an ultra low-noise frequency 1• Multiple Frequency Options Available (See Device Comparison Table) synthesizer which integrates a high-performance delta-sigma fractional N PLL, a VCO with fully • Frequencies From 31.6 MHz to 4000 MHz integrated tank circuit, and an optional frequency • Very Low RMS Noise and Spurs divider. The PLL offers an unprecedented normalized • –225 dBc/Hz Normalized PLL Phase Noise noise floor of –225 dBc/Hz and can be operated with up to 104 MHz of phase-detector rate (comparison • Integrated RMS Noise (100 Hz to 20 MHz) frequency) in both integer and fractional modes. The – 2 mRad (100 Hz to 20 MHz) at 2.1 GHz PLL can also be configured to work with an external – 3.5 mRad (100 Hz to 20 MHz) at 3.5 GHz VCO. • Ultra Low-Noise Integrated VCO The LMX2541 integrates several low-noise, high- • External VCO Option (Internal VCO Bypassed) precision LDOs and output driver matching network to provide higher supply noise immunity and more • VCO Frequency Divider 1 to 63 (All Values) consistent performance, while reducing the number of • Programmable Output Power external components. When combined with a high- • Up to 104-MHz Phase Detector Frequency quality reference oscillator, the LMX2541 generates a • Integrated Low-Noise LDOs very stable, ultra low-noise signal. • Programmable Charge Pump Output The LMX2541 is offered in a family of 6 devices with • Partially Integrated Loop Filter varying VCO frequency range from 1990 MHz up to 4 GHz.
    [Show full text]
  • Design Techniques for High Performance Integrated Frequency Synthesizers for Multi-Standard Wireless Communication Applications
    Design Techniques for High Performance Intgrated Frequency Synthesizers for Multi-standard Wireless Communication Applications by Li Lin B.S. (Portland State University, Portland) 1994 M.S. (University of California, Berkeley) 1996 A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering-Electrical Engineering and Computer Sciences in the GRADUATE DIVISION of the UNIVERSITY OF CALIFORNIA, BERKELEY Committee in charge: Professor Paul R. Gray, Chair Professor Robert G. Meyer Professor Kjell Doksum Fall 2000 The dissertation of Li Lin is approved: Professor Paul R. Gray, Chair Date Professor Robert G. Meyer Date Professor Kjell Doksum Date University of California, Berkeley Fall 2000 Design Techniques for High Performance Integrated Frequency Synthesizers for Multi-standard Wireless Communication Applications Copyright 2000 by Li Lin 1 Abstract Design Techniques for High Performance Intgrated Frequency Synthesizers for Multi-standard Wireless Communication Applications by Li Lin Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences University of California, Berkeley Professor Paul R. Gray, Chair The growing importance of wireless media for voice and data communications is driving a need for higher integration in personal communications transceivers in order to achieve lower cost, smaller form factor, and lower power dissipation. One approach to this problem is to integrate the RF functionality in low-cost CMOS technology together with the baseband transceiver functions. This in turn requires integration of the frequency synthesizer with enough isolation from supply noise to allow the synthesizer to coexist with other on-chip transceiver circuitry and still meet the phase noise performance requirements of the application.
    [Show full text]
  • MC145170-2/D Technical Data Rev
    Freescale Semiconductor MC145170-2/D Technical Data Rev. 5, 1/2005 MC145170-2 Package Information P Suffix SOG Package MC145170-2 Case 648 PLL Frequency Synthesizer with Serial Interface SCALE 2:1 Package Information Package Information D Suffix DT Suffix Plastic DIP Package TSSOP Package Case 751B Case 948C 1 Introduction Ordering Information The new MC145170-2 is pin-for-pin compatible with the Operating Device Package MC145170-1. A comparison of the two parts is shown in Temperature Range Table 1 on page 2. The MC145170-2 is recommended MC145170P2 Plastic DIP for new designs and has a more robust power-on reset MC145170D2T = -40 to 85°C SOG-16 (POR) circuit that is more responsive to momentary A MC145170DT2 TSSOP-16 power supply interruptions. The two devices are actually the same chip with mask options for the POR circuit. The Contents more robust POR circuit draws approximately 20 µA additional supply current. Note that the maximum 1 Introduction . 1 specification of 100 µA quiescent supply current has not 2 Electrical Characteristics . 3 3 Pin Connections . 9 changed. 4 Design Considerations . 18 The MC145170-2 is a single-chip synthesizer capable of 5 Packaging . 29 direct usage in the MF, HF, and VHF bands. A special architecture makes this PLL easy to program. Either a bit- or byte-oriented format may be used. Due to the patented BitGrabber™ registers, no address/steering bits are required for random access of the three registers. Thus, tuning can be accomplished via a 2-byte serial transfer to the 16-bit N register.
    [Show full text]
  • Pll Based Frequency Synthesizer Implemented
    Vol.97(3) September 2006 SOUTH AFRICAN INSTITUTE OF ELECTRICAL ENGINEERS 237 PLL BASED FREQUENCY SYNTHESIZER PLLIMPLEMENTED BASED FREQUENCY WITH SYNTHESIZERAN ACTIVE INDUCTORIMPLEMENTED WITH ANOSCILLATOR ACTIVE INDUCTOR OSCILLATOR. S. Sinha and M. du Plessis Department of Electrical, Electronic & Computer Engineering, Carl and Emily Fuchs Institute for Microelectronics (CEFIM), University of Pretoria, Pretoria, South Africa, 0002 Abstract: High costs, bulkiness, and larger power consumption makes transceiver integration and miniaturization a desired option to discretely implemented transceivers. Furthermore, a frequency synthesizer forms an important part of high-frequency transceivers. In this paper, the design of a fully-integrated dual loop frequency synthesizer is detailed. Previously, frequency synthesizers have already been implemented using CMOS technology. The synthesizer discussed in this paper deploys a dual loop architecture with a high-frequency LC voltage controlled oscillator (VCO) forming part of one of the loops. As opposed to previous architectures, the synthesizer discussed in this paper utilises an active-inductor LC VCO as opposed to a passive-inductor LC VCO deployed in earlier synthesizer implementations. Amongst others, an important advantage of this implementation is the higher quality, Q-factor of the active inductor at the trade-off of increased noise and power dissipation. The synthesizer generates signals in the microwave frequency (2.4-2.5 GHz) range with a 1 MHz resolution. Using the 0.35 µm BiCMOS process, simulations showed a phase noise of –117 dBc/Hz at an offset of 1 MHz and reference sidebands at -80 dBc, both these parameters with respect to a 2.45 GHz carrier. Key words: Phase locked loop (PLL), voltage controlled oscillator (VCO), single sideband (SSB) mixer, active inductor VCO.
    [Show full text]
  • AN1207 MC145170 in Basic HF and VHF Oscillators
    MOTOROLA Freescale Semiconductor, Inc. Order this document SEMICONDUCTOR TECHNICAL DATA by AN1207/D AN1207 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 The MC145170 in Basic HF and VHF Oscillators Prepared by: David Babin and Mark Clark Phase–locked loop (PLL) frequency synthesizers are com- The output of a VCM is a square wave and is usually monly found in communication gear today. The carrier oscilla- integrated before being fed to other sections of the radio. The tor in a transmitter and local oscillator (LO) in a receiver are VCM output can be directly used in computers and other digi- where PLL frequency synthesizers are utilized. In some cellu- tal equipment. The output of a VCO or VCM is typically buff- lar phones, a synthesizer can also be used to generate 90 ered, as shown. MHz for an offset loop. In addition, synthesizers can be used As shown in Figure 2, the MC145170 contains a reference in computers and other digital systems to create different oscillator, reference counter (R Counter), VCO/VCM counter clocks which are synchronized to a master clock. (N Counter), and phase detector. A more detailed block dia- . The MC145170 is available to address some of these gram is shown in the data sheet. applications. The frequency capability of the newest version, c the MC145170–2, is very broad — from a few hertz to HF SYNTHESIZER 185 MHz. n I The basic information required for designing a stable high– , frequency PLL frequency synthesizer is the frequencies ADVANTAGES r required, tuning resolution, lock time, and overshoot. For the o Frequency synthesizers, such as the MC145170, use digi- example design of Figure 3, the frequencies needed are t tal dividers which can be placed under MCU control.
    [Show full text]
  • A Fully Integrated Multi-Output CMOS Frequency Synthesizer for Channelized Receivers
    A Fully Integrated Multi-Output CMOS Frequency Synthesizer For Channelized Receivers Ali Medi Won Namgoong [email protected] [email protected] Department of Electrical Engineering University of Southern California Los Angeles, CA 90089 Abstract Base-Band Quadrature Amplifiers A fully integrated frequency synthesizer that generates Mixers multiple frequencies for use in frequency channelized ADC @ receivers is designed in 0.25µm CMOS technology. Many of 1GSPS LO @ 4GHz the unique features of this receiver have been exploited to ADC @ design a highly integrated and power efficient multi-output 1GSPS DSP Output frequency synthesizer including the poly-phase filters. The 03.5 7.5 f (GHz) LO @ 5GHz Unit synthesizer generates 4, 5, 6, and 7 GHz signals while ADC @ 1GSPS dissipating 120mW. LNA LO @ 6GHz Stage ADC @ I. Introduction 1GSPS LO @ 7GHz Although great headway has recently been made in efficient implementation of narrowband communication 0500f (MHz) systems, very little work on the implementation of wideband Fig. 1. Receiver architecture communication radios exist by comparison. More recently, however, there have been a growing number of research a synthesizer in 0.25µm CMOS technology for a frequency institutions starting research in this area. Motivation for such channelized UWB receiver. This design receives from 3.5 research activities are based on, for example, the emergence of GHz to 7.5 GHz, which corresponds to a bandwidth of the ultra-wideband (UWB) radio and the need for multi-modal approximately 4 GHz. radios to support the myriad of existing communication The organization of this paper is as follows. Section II standards. describes some of the synthesizer design challenges as well as Among the technical challenges in designing a wideband different design approaches.
    [Show full text]
  • Techniques for Frequency Synthesizer-Based Transmitters
    Techniques for Frequency Synthesizer-Based Transmitters by Mohammad Mahdi Ghahramani A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in The University of Michigan 2015 Doctoral Committee: Professor Michael P. Flynn, Chair Professor Jerome P. Lynch Associate Professor David D. Wentzloff Assistant Professor Zhengya Zhang c Mohammad Mahdi Ghahramani 2015 All Rights Reserved To Simintaj Fasihiani and Arsalan Ghahramani ii ACKNOWLEDGEMENTS Muchas gracias! The completion of this PhD was only possible with the help, support, and encouragement of many wonderful souls. First, I would like to express my deepest gratitude to my adviser, Professor Michael P. Flynn, for giving me the opportunity to pursue a PhD in this finest of institutions. I thank Mike for tirelessly reading papers, revising slides, and editing manuscripts—often during weekends and holidays. Also, for his technical and non-technical advice and insight, and for supporting me throughout this somewhat unorthodox path towards the PhD. I would like to sincerely thank my committee members, Professor David D. Wentzloff, Professor Zhengya Zhang, and Professor Jerome P. Lynch, for taking time out of their busy schedules to attend meetings and presentations; and for their invaluable advice along the way. Big thanks to my group members, past and present. That is, Dr. Mark Ferriss, Dr. Jorge Pernillo, Aaron Rocca, Dr. Li Li, Dr. David T. Lin, Jaehun Jeong, Professor Hyungil Chae, Jeffery Fredenburg, Nick Collins, Dr. Hyo Gyuem Rhew, Andres Tamez, Dr. Chun Lee, Dr, Joshua Kang, John Bell, Chunyang Zhai, Aramis P. Alvarez, Dr. Shahrzad Naraghi, Fred Buhler, Batuhan Dayanik, Sunmin Jang, Yong Lim, Steven Mikes, Daniel Weyer, and Adam iii Mendrela.
    [Show full text]
  • A Transmitter And/Or Receiver
    Europaisches Patentamt 19 European Patent Office Office europeen des brevets © Publication number : 0 678 974 A2 12 EUROPEAN PATENT APPLICATION © Application number : 95302359.5 (sT) Int. CI.6: H03D7/16 (22) Date of filing : 10.04.95 (30) Priority: 21.04.94 Fl 941862 (72) Inventor : Vaisanen, Risto Vahasillankatu 10 B 5 (43) Date of publication of application : SF-24100 Salo (Fl) 25.10.95 Bulletin 95/43 (74) Representative : Haws, Helen Louise et al @ Designated Contracting States : Nokia Mobile Phones, DE FR GB SE Patent Department, St. Georges Court/St. Georges Road, 9 Street @ Applicant : NOKIA MOBILE PHONES LTD. High P.O. Box 86 Camberley, Surrey GU15 3QZ (GB) SF-24101 Salo (Fl) (54) A transmitter and/or receiver. (57) The present invention relates to a method and a radio frequency system for generating the frequencies for a receiver and a transmitter in a radio communication system operating on two different frequency ranges, and to a receiver and a transmitter operating on two different frequency ranges, whereby a first frequency synthesizer generates a first mixer frequency and a second frequency synthesizer generates a second mixer frequency, the reception fre- quency is first mixed in the first mixer to a first intermediate frequency by the first mixer fre- quency, and the first intermediate frequency is further mixed to a second intermediate fre- quency in a second mixer by the second mixer frequency, and whereby the transmission fre- quency of the transmitter is generated by mix- ing the transmitted signal in a third mixer up to the transmission frequency by the first and second mixer frequencies.
    [Show full text]
  • CC1101 Low-Power Sub-1 Ghz RF Transceiver Datasheet (Rev. I)
    CC1101 Low-Power Sub-1 GHz RF Transceiver Applications Ultra low-power wireless applications Wireless sensor networks operating in the 315/433/868/915 MHz AMR – Automatic Meter Reading ISM/SRD bands Home and building automation Wireless alarm and security systems Wireless MBUS Industrial monitoring and control Product Description CC1101 is a low-cost sub-1 GHz transceiver microcontroller and a few additional passive designed for very low-power wireless appli- components. cations. The circuit is mainly intended for the The CC1190 850-950 MHz range extender [21] ISM (Industrial, Scientific and Medical) and CC1101 SRD (Short Range Device) frequency bands can be used with in long range at 315, 433, 868, and 915 MHz, but can easily applications for improved sensitivity and higher be programmed for operation at other output power. frequencies in the 300-348 MHz, 387-464 MHz and 779-928 MHz bands. The RF transceiver is integrated with a highly configurable baseband modem. The modem 0 9 8 7 6 1 1 1 1 supports various modulation formats and has 2 a configurable data rate up to 600 kbps. 1 15 2 CC1101 14 3 13 CC1101 provides extensive hardware support 4 12 for packet handling, data buffering, burst 5 11 0 7 8 9 1 transmissions, clear channel assessment, link 6 quality indication, and wake-on-radio. The main operating parameters and the 64- byte transmit/receive FIFOs of CC1101 can be controlled via an SPI interface. In a typical system, the CC1101 will be used together with a SWRS061I Page 1 of 98 CC1101 Key Features RF Performance Low-Power
    [Show full text]