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Electron Mobility in N-Polar Gan/Algan/Gan Heterostructuress ͒ David F

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Electron Mobility in N-Polar Gan/Algan/Gan Heterostructuress ͒ David F Electron mobility in N-polar GaN/AlGaN/ GaN heterostructuress Cite as: Appl. Phys. Lett. 93, 042104 (2008); https://doi.org/10.1063/1.2965483 Submitted: 25 March 2008 . Accepted: 09 July 2008 . Published Online: 29 July 2008 David F. Brown, Siddharth Rajan, Stacia Keller, Yun-Hao Hsieh, Steven P. DenBaars, and Umesh K. Mishra ARTICLES YOU MAY BE INTERESTED IN N-polar high electron mobility transistors Journal of Applied Physics 102, 044501 (2007); https://doi.org/10.1063/1.2769950 Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures Journal of Applied Physics 120, 115302 (2016); https://doi.org/10.1063/1.4962321 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors Applied Physics Letters 77, 250 (2000); https://doi.org/10.1063/1.126940 Appl. Phys. Lett. 93, 042104 (2008); https://doi.org/10.1063/1.2965483 93, 042104 © 2008 American Institute of Physics. APPLIED PHYSICS LETTERS 93, 042104 ͑2008͒ Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress ͒ David F. Brown,1,a Siddharth Rajan,1 Stacia Keller,1 Yun-Hao Hsieh,1 Steven P. DenBaars,1,2 and Umesh K. Mishra1 1Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA 2Materials Department, University of California, Santa Barbara, California 93106, USA ͑Received 25 March 2008; accepted 9 July 2008; published online 29 July 2008͒ The drift mobility of two-dimensional electron gasses in N-polar GaN/AlGaN/GaN heterostructures was measured with capacitance and resistance measurements using gated transmission line method structures. A decrease in mobility with increasing reverse bias of the gate was observed. A variational wave function was used to calculate the mobility limited by optical phonon, alloy disorder, and ionized impurity scattering as a function of gate bias, and found to match the experimental data well. Three distinct regimes where phonon, alloy, and impurity scattering are dominant were observed. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2965483͔ N-polar GaN and its alloys are very promising due to the source current of 25 ␮A was used to avoid high-field effects reversal of spontaneous and piezoelectric polarization and pinch off of the channel. The 2DEG sheet charge ns as a charges at heterostructure interfaces.1 In GaN/AlGaN/GaN function of gate bias was determined from capacitance- structures, these polarization charges lead to a fixed sheet of voltage measurements. The mobility was calculated by com- mobile electrons, or a two-dimensional electron gas ͑2DEG͒, bining the two measurements using at the top heterointerface, which forms the basis of N-polar ␮͑ ͒ ͓ ͑ ͒ ͑ ͔͒−1 ͑ ͒ high electron mobility transistors ͑HEMTs͒.2 Although VG = eRsh VG ns VG . 1 3–5 N-polar HEMTs have been demonstrated, the transport A variational wave function for mobile electrons con- properties have not been studied in great detail. Unlike Ga- fined in a triangular quantum derived by Fang and Howard polar HEMTs, the 2DEG charge is well confined in a deep has had widespread use for electron transport calculations for triangular quantum well between the AlGaN barrier and a 2DEGs in many different material systems.7 Traditionally, it strong electric field induced by the surface potential. As the has been assumed that the triangular potential well was gate bias is increased, the electric field increases, confining shaped entirely by depleted background dopants and the mo- the electrons further in the triangular potential well. The ge- bile charge confined to the well. However, a previous experi- ometry of the electron wave function and its penetration into ment observed a strong impact on the mobility of 2DEGs the barrier, both of which are of paramount importance to the when the electric field in the well is modulated by an exter- transport properties of the 2DEG, are therefore strongly af- nal voltage.6 The structure used in this study is shown in Fig. 6 fected by the shape of the potential well. In this work, we 1. It consists of an Al0.33Ga0.67N barrier grown on a semi- create a theoretical model for calculating electron mobility in insulating GaN buffer. The structure hasa5nmGaNchannel 2DEGs confined to triangular quantum wells as a function of layer, a 25 nm Al0.1Ga0.9N cap layer, and a 5 nm SiN gate the electric field in the well and apply it to N-polar HEMTs insulator on top of the barrier. Material properties for the grown by metal-organic chemical vapor deposition alloys were determined using Vegard’s law ͑Table I͒. ͑MOCVD͒. Charge and drift mobility were measured as a In a previous study, a variational wave function was de- function of electric field using capacitance-voltage ͑C-V͒ rived for infinite triangular wells where F, the electric field, 8 measurements and gated transmission line method ͑TLM͒ is known. A generalized form of the Fang–Howard wave structures and found to fit the theoretical calculations well. function was used, The HEMT structure shown in Fig. 1 was grown by ␺͑ ͒ a ͑ / ͒ Ն ͑ ͒ MOCVD on a sapphire substrate misoriented 3° toward the a z = Cz exp − bz 2 , z 0, 2 3 plane using a growth technique detailed in an earlier study. where a and b are variational parameters, ⌫ is the gamma The structure was capped with 5 nm of SiN grown by function, and C=͓b2a+1/⌫͑2a+1͔͒0.5. When a=1 this is iden- MOCVD in order to reduce gate leakage. Measurement of tical to the Fang–Howard wave function. Using this as a trial the drift mobility was done using gated TLM structures. The function, one can obtain the first subband energy as structures were aligned parallel to the surface steps because the drift mobility of N-polar HEMTs grown by MOCVD is anisotropic with respect to the direction of the source current.3 The resistance of TLM patterns with gate lengths varying from 2 to 20 ␮m, and access region lengths of 2 ␮m, was measured. The slope of the resistance line with respect to the gate length multiplied by the gate width gave the channel sheet resistance Rsh at each gate bias. A small FIG. 1. Epitaxial structure of the N-polar HEMT used for both theoretical ͒ a Electronic mail: [email protected]. calculations and experimental measurements in this study. 0003-6951/2008/93͑4͒/042104/3/$23.0093, 042104-1 © 2008 American Institute of Physics 042104-2 Brown et al. Appl. Phys. Lett. 93, 042104 ͑2008͒ TABLE I. Material constants for the device structure measured in this study.14 Property Symbol Value Units ء ͒ ͑ Effective mass well mw 0.20 ... ء ͒ ͑ Effective mass barrier mb 0.27 ... ͑ ͒ ⌬ Conduction band offset barrier-channel Ec,1 0.59 eV ͑ ͒ ⌬ Conduction band offset channel-cap interface Ec,2 0.18 eV ͑ ͒ ␴ / 2 Polarization charge channel-cap interface ␲,net −0.0086 C m Static dielectric constant ␧ 8.9 ... FIG. 2. Conduction band diagram of the HEMT used in this experiment. The N-polar surface is on the right hand side. ប2 b2 eF ͑ ͒ ͑ ͒ ␴ /␧ E0 = + 2a +1 . 3 Poisson’s equation we can substitute Fcap=Fchannel+ ␲,net , 2m* 4͑2a −1͒ b ␴ w where ␲,net is the net polarization charge at the cap channel and ␧ is the permittivity of GaN. Since the electric field must ء Where m is the electron effective mass in the well, ប is the w be known in order to calculate E , we approximate E as reduced Planck constant, and e is the electron charge. Mini- 0 0 0.15 eV for the purpose of calculating the electric field at mization with respect to b yields the relation zero gate bias. This was confirmed to be a good approxima- 3 ប−2 * ͑ ͒͑ ͒͑͒ tion by solving Schrodinger and Poisson’s equations self- b =4e mwF 2a +1 2a −1 4 consistently. Expressed in terms of fundamental parameters, for the variational parameter, and minimizing b yields a the electric field in the channel is =1.5. This wave function does not account for penetration of ͑ ͒ the wave function into the AlGaN barrier, and thus cannot be F 0 used to calculate the alloy scattering rate. Furthermore, the ␾ ␲ប2 ͑ ͒/͓ *͔ ͑ ͒/ ␴ /␧ ⌬ / s + ns 0 em + E0 0 e − ␲,nettcap − EC,2 e centroid of the 2DEG is predicted to be further from the = w , barrier, which can strongly affect some calculations. tchannel + tcap We developed a modified form of this wave function in ͑12͒ this study, which takes the form ӷ ⌽ if Ef −E0 kT. s was measured as 0.9 V for GaN in a ␺͑ ͒ ͑␬ / ͒ Ͻ ͑ ͒ 9 z = M exp Bz 2 , z 0, 5 previous experiment using C-V measurements, thus we used ͑ ͒ ͑ ͒ a value of 1 V for 10% AlGaN. It follows that F Vg =F 0 ␺͑ ͒ ͑ ͒a ͑ / ͒ Ն ͑ ͒ /͑ ͒ z = NC z + zo exp − bz 2 , z 0, 6 +Vg tchannel+tcap+tSiN , where tSiN is the thickness of the gate insulator. The charge in the channel will deplete as the where M and N are normalization constants and z=0 at the ␬ gate is reverse biased. Using Poisson’s equation, the channel barrier-channel interface. In the barrier, B is given by ͑ ͒ ͑ ͒ charge at an arbitrary reverse bias is ns Vg =ns 0 ␬ ប−1ͱ *͑⌬ ͒ ͑ ͒ −␧͓F͑V ͒−F͑0͔͒/e, where n ͑0͒ was measured as B =2 2mb EC,1 − E0 , 7 g s 9.7e12 cm−2 experimentally.
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