Electrostatic Discharge Analysis of Multi Layer Ceramic Capacitors
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Electrostatic Discharge Analysis of Multi Layer Ceramic Capacitors Cyrous Rostamzadeh, Robert Bosch LLC – USA February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Mr. Kimball Williams Thank you for your Colossal Contributions and Dedication to IEEE EMC Society. You have educated, trained, inspired, managed and encouraged many of the EMC Engineers and Technicians in the SE Michigan area. You are well respected by everyone throughout the EMC Society and Automotive Community. I had the privilege to prepare this presentation, per your invitation, and I hope you will continue to guide the EMC Society long after your retirement from the Professional Responsibilities as of February 2012, thank you. Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Mr. Kimball Williams Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 A privilege for me to be educated, mentored, collaborated with some of the finest minds of EMC… Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Dr. Al Reuhli (IBM) Dr.Clayton Paul Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Dr. Howard Johnson Signal Integrity 1994 2001 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Professor Flavio Canavero Politecnico di Torino Professor Christos Christopouplos University of Nottingham Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Professor Sergio Pignari Politecnico di Milano Professor Farhad Rachidi Swiss Federal Institute of Technology (EPFL) Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ProfessorProfessor JamesJames DrewniakDrewniak Dr.Dr. BruceBruce ArchambeaultArchambeault MissouriMissouri STST UniversityUniversity IBM,IBM, RTPRTP ProfessorProfessor DavidDavid PommerenkePommerenke HenryHenry OttOtt MissouriMissouri STST UniversityUniversity Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Gordon Mapes, Phil Bator, Andy Macko, Mike Bosley,Arnie Nielsen, Terry North, Victor Lau, Mark Steffka, Kimball Williams, Howard Kendall, Don Seyerle, Rick Grunow, Jim Muccioli, Thorsten Schneider, Tom Livernois, Rick Lombardi, Richard Wiese, Bill Sperber, Scott Lytle, Keith Frazier, Lloyd Elsworth, Laura Ball, Larry Banasky, Larry J. Boguslawski, Chingchi Chen, Samuel R. Connor, Prof. Marcello D'Amore, Dr. Phil Fanson, Bill Gilmore, Poul Anderson, Dr. Flavia Grassi, Dr. Todd Hubing, Dr. Chris Holloway, Professor Michel Ianoz, Dr. Thomas A. Jerse, Rob Kado, Richard Kautz, Jarek Tracz, Jack King, Joe Kramer, Roy Leventhal, Filippo Marliani, Scott Mee, Prof. Antonio Orlandi, Vipul Patel, Sreeniwas Ranganathan, Andrew J. Shune, James P. Spivey, John P. Sundeen, Daniel M Traynor, Dr. Al Wexler, Dr. David Hill, Dr. Perry Wilson, Doug Smith, Dr. Erping Li, Dustin Willim, Mark Wisnewski, Matthew Yager, Paul Sarna, Jack Meyer, Mark Miles… Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Back to basics… Electric Currents Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Electric Currents Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Conduction Current & Displacement Current Conduction Current Displacement Current Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Conduction Current & Displacement Current Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Conduction Current & Displacement Current Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Conduction Current & Displacement Current Conduction Current >> Magnetic Field Displacement Current >> Electric Field Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Motivation and Objectives Multi layer Ceramic Capacitors are utilized for ESD Protection of Connector I/O Pins → Low Cost, Small Footprint (i.e., 0603 - X7R Class II) ideal for High Density Electronic Control Modules. But Need to determine ESD Robustness or any Degradation due to ESD: ¾ Pre_ESD and Post_ESD Impedance vs. Frequency Characterization. ¾ Optical Examination of Dielectric Structure after ESD Exposure. Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Motivation and Objectives In this Work ¾ Electrostatic Discharge according to IEC61000-4-2 ¾ Human Body Model up to 25 kV (100 pF , 2 kΩ Discharge Network) ¾ MLCC (0603 package 1.6 mm X 0.5 mm) 680 pF and 10 nF (100 Volts), X7R Type II (-55oC -> +125oC) ¾ In addition, MLCC (0805 package) ¾ Discharge to PCB Mounted MLCC ¾ Discharge to Non-PCB Mounted MLCC Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 MLCCMLCC ProcessProcess Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ε ε nA C = 0 r Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 t Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 CeramicCeramic MLCCMLCC TypesTypes C0G,C0G, X7R,X7R, X5R,X5R, X8R,X8R, X8LX8L Class I – Most stable over Temperature and Voltage, & Frequency but Lowest Volumetric Efficiency (C0G or NPO) Class II – Lower Accuracy and Stability (+/- 15%, -55 0C –> 125 0C) X7R Class III – Highest Volumetric Efficiency, but Poor Accuracy & Stability Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 MLCCMLCC CharacteristicsCharacteristics AnAn ElectricalElectrical ModelModel…… Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 1 F n X = 1 C j2πfC F n 0 1 Linear Scale Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 F n 1 1 X = C j2πfC F n 0 1 Logarithmic Scale Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 WhatWhat isis inin aa ModelModel…… C 1 X = C j2πfC Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 BuildingBuilding aa ModelModel…… Heat 1 Z = + R j2πfC Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 BuildingBuilding aa ModelModel…… Heat 1 Z = + R + j2πfL j2πfC Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 10nF, |Z| Cyrous Rostamzadeh, Senior 10nF, |ESR| Describing MLCC with Matlab 1 j2 πfC IEEE Member, February 17, 2011 j2 πfL 0603 (100 V) MLCC Characteristics 1 nF Superior for freq. > 50 MHz 100 mΩ 10 mΩ Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 DissipationDissipation FactorFactor ImpedanceImpedance PlanePlane Loss ESR ESR DF = tan(δ ) = = 1 X Q δ C − jX C DF = Resistive power Loss in ESR / Reactive Power oscillating in Capacitor Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ESRESR isis aa functionfunction ofof FrequencyFrequency Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 TemperatureTemperature FactorFactor Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 anan ESDESD EventEvent…… Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ¾ESD voltages as high as 30 kV has been observed in automotive environment. ¾ESD is rich in high-frequency (> 3 GHz) ! ¾ESD event can create currents in excess of 30 Amps! ¾ESD currents can destroy IC’s, PCB traces and other components. ¾ESD can create time-varying Magnetic Field: 25 A/m. ¾ESD can create time-varying Electric Field as high as: 10 kV/m. ¾ESD can create Susceptibility Problems. Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ESD phenomena involves ElectricalElectrical && ThermalThermal TransportsTransports on the Scale of nanometers (nm), Circuits and Electronics on the Scale of micrometers (µm), Semiconductor Chip designs range from picoseconds (ps) to microseconds (µs), Electrical Currents of interest range from mA to 10’s of Amperes. Voltages range from Volts to kiloVolts (kV). Temperatures vary from room temperature to melting temperatures of 1000’s 0K… Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Must Quantify the Scale in SpaceSpace && TimeTime ESD phenomena involves: Microscopic to Macroscopic Scales. ¾ESD is a Thermo-Electric Transport of Material Physics Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 Capacitance – ESD Charge Storage Element Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 ChargeCharge StorageStorage CapacitanceCapacitance 4πε C = ⎛ 1 1 ⎞ r ⎜ − ⎟ 1 ⎝ r1 r2 ⎠ r2 −12 if r2 ⇒ ∞, and for free space, ε = 8.85×10 F / m C = ()111× r pF, a human has a surface area ≈ to 1 meter diameter sphere, ⇒ CHuman Body ≈ 50 pF Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 FreeFree--SpaceSpace CapacitanceCapacitance Human Body Capacitance 50 pF Earth’s Capacitance 700 µF An object a size of marble 1 pF ¾¾InIn addition,addition, wewe mustmust considerconsider ParallelParallel PlatePlate CapacitanceCapacitance duedue toto thethe proximityproximity ofof anan objectobject toto thethe surroundingsurrounding Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 HumanHuman BodyBody ModelModel (HBM)(HBM) Self-Capacitance 50 - 100 pF 50 pF to infinity 500 Ω to 10 kΩ 100 pF Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 HumanHuman BodyBody ModelModel (HBM)(HBM) ¾¾Therefore,Therefore, thethe CapacitanceCapacitance ofof aa HumanHuman BodyBody isis thethe CombinationCombination ofof FreeFree--SpaceSpace CapacitanceCapacitance ++ ParallelParallel--PlatePlate CapacitanceCapacitance andand cancan varyvary fromfrom 5050 pFpF toto 250250 pFpF Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 HumanHuman BodyBody ModelModel (HBM)(HBM) VHB CHB = 50 − 250 pF RHB = 500 Ω −10 kΩ VHB = 0 to 25 kV Cyrous Rostamzadeh, Senior IEEE Member, February 17, 2011 HumanHuman BodyBody ModelModel (HBM)(HBM) For a Human Body of 100 pF Capacitance, Charged Up to 25 kVolt,