Appendix A: Microwave Breakdown in Gases
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Methodology for Analysis of Electrical Breakdown in Micrometer Gaps In
Methodology for Analysis of Electrical Breakdown In Micrometer gaps in Tip-To-Plane Configuration Kemas Tofani, Jean-Pascal Cambronne, Sorin Dinculescu, Ngapuli Sinisuka, Kremena Makasheva To cite this version: Kemas Tofani, Jean-Pascal Cambronne, Sorin Dinculescu, Ngapuli Sinisuka, Kremena Makasheva. Methodology for Analysis of Electrical Breakdown In Micrometer gaps in Tip-To-Plane Configuration. 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Oct 2018, Portland, United States. pp.1-4, 10.1109/NMDC.2018.8605855. hal-02324370 HAL Id: hal-02324370 https://hal.archives-ouvertes.fr/hal-02324370 Submitted on 1 Nov 2019 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Methodology for analysis of electrical breakdown in micrometer gaps in tip-to-plane configuration Kemas M Tofani LAPLACE, Université de Toulouse, Jean-Pascal Cambronne Sorin Dinculescu CNRS LAPLACE, Université de Toulouse, LAPLACE, Université de Toulouse, Toulouse, France CNRS CNRS Bandung Institute of Technology Toulouse, France Toulouse, France Bandung, Indonesia [email protected] [email protected] PT. PLN Jakarta, Indonesia Kremena Makasheva [email protected] LAPLACE, Université de Toulouse, CNRS Ngapuli I. Sinisuka Toulouse, France Bandung Institute of Technology [email protected] Bandung, Indonesia [email protected] Abstract—Better understanding of the electrical behavior of electron emission process by ions bombardment on the miniaturized electrical devices is largely supported by the need cathode. -
Planning For, Selecting, and Implementing Technology Solutions
q A GUIDEBOOK for Planning for, Selecting, and Implementing Technology Solutions FIRST EDITION March 2010 This guide was prepared for the Nation-al Institute of Justice, U.S. Department of Justice, by the Weapons and Protective Systems Technologies Center at The Pennsylvania State University under Cooperative Agreement 2007-DE-BX-K009. It is intended to provide information useful to law enforcement and corrections agencies regarding technology planning, selection, and implementation. It is not proscriptive in nature, rather it serves as a resource for program development within the framework of existing departmental policies and procedures. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors/editors and do not necessarily reflect the views of the National Institute of Justice. They should not be construed as an official Department of Justice position, policy, or decision. This is an informational guidebook designed to provide an overview of less-lethal devices. Readers are cautioned that no particular technology is appropriate for all circumstances and that the information in this guidebook is provided solely to assist readers in independently evaluating their specific circumstances. The Pennsylvania State University does not advocate or warrant any particular technology or approach. The Pennsylvania State University extends no warranties or guarantees of any kind, either express or implied, regarding the guidebook, including but not limited to warranties of non-infringement, merchantability and fitness for a particular purpose. © 2010 The Pennsylvania State University GUIDEBOOK for LESS-LETHAL DEVICES Planning for, Selecting, and Implementing Technology Solutions FOREWORD The National Tactical Officers Association (NTOA) is the leading author- ity on contemporary tactical law enforcement information and training. -
2011-2012 PIPS Policy Brief Book
The Project on International Peace and Security The College of William and Mary POLICY BRIEFS 2011-2012 The Project on International Peace and Security (PIPS) at the College of William and Mary is a highly selective undergraduate think tank designed to bridge the gap between the academic and policy communities in the area of undergraduate education. The goal of PIPS is to demonstrate that elite students, working with faculty and members of the policy community, can make a meaningful contribution to policy debates. The briefs enclosed are a testament to that mission and the talent and creativity of William and Mary’s undergraduates. Amy Oakes, Director Dennis A. Smith, Director The Project on International Peace and Security The Institute for Theory and Practice of International Relations Department of Government The College of William and Mary P.O. Box 8795 Williamsburg, VA 23187-8795 757.221.5086 [email protected] © The Project on International Peace and Security (PIPS), 2012 TABLE OF CONTENTS ALLISON BAER, “COMBATING RADICALISM IN PAKISTAN: EDUCATIONAL REFORM AND INFORMATION TECHNOLOGY.” .............................................................................................1 BENJAMIN BUCH AND KATHERINE MITCHELL, “THE ACTIVE DENIAL SYSTEM: OBSTACLES AND PROMISE.” ..................................................................................................................19 PETER KLICKER, “A NEW ‘FREEDOM’ FIGHTER: BUILDING ON THE T-X COMPETITION.” ...........................................................................................................37 -
The Pennsylvania State University
The Pennsylvania State University The Graduate School Department of Materials Science and Engineering TEMPERATURE DEPENDENCE OF DIELECTRIC BREAKDOWN IN POLYMERS A Thesis in Materials Science and Engineering by Cheolhong Min © 2008 Cheolhong Min Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science August 2008 ii The thesis of Cheolhong Min was reviewed and approved* by the following: Thomas R. Shrout Professor of Materials Science Thesis Co-Advisor Michael T. Lanagan Associate Professor of Engineering Science and Mechanics Thesis Co-Advisor Shujun Zhang Research Associate and Assistant Professor of Materials Science and Engineering Joan Redwing Professor of Materials Science and Engineering Chair, Intercollege Graduate Degree Program in Materials Science and Engineering *Signatures are on file in the Graduate School iii ABSTRACT Capacitors possess high-power densities and have the ability to deliver energy with short discharge times, which are in the micro-second to nano-second range. Both energy and power density are related to the dielectric materials used in the capacitor. One of the main challenges for capacitors is achieving high energy density as determined by the relative permittivity and dielectric breakdown strength of a material. Polymers are some of the most important dielectric materials for high-power capacitors because polymer films show high breakdown strength. A general trend in polymers is that the breakdown strength increases with decreasing temperature. An understanding of the temperature dependence relationships among electrical properties, polymer chemistry, and crystalline structure may lead to improved energy storage for polymer-based capacitors—this is the basis of the thesis. Various polymers including polypropylene (PP), polyimide (PI), polymethyl methacrylate (PMMA), poly(vinylidene fluoride-trifluoroethylene- chlorotrifluoroethylene) terpolymer (p(VDF-TrFE-CTFE)) were investigated in this study. -
Chapter Iii Power Bipolar Junction Transistor (Bjt)
50 CHAPTER III POWER BIPOLAR JUNCTION TRANSISTOR (BJT) 3.1 INTRODUCTION Switching time and switching losses are primary concerns in high power applications. These two factors can significantly influence the frequency of operation and the efficiency of the circuit. Ideally, a high power switch should be able to turn-on and turn-off controllably and with minimum switching loss. The Bipolar junction transistor is an important power semiconductor device used as a switch in a wide variety of applications. The switching speed of a BJT is often limited by the excess minority charge storage in the base and collector regions of the transistor during the saturation state. The conventional methods for improving the switching frequency by reducing the lifetime of the lightly doped collector region through incorporation of impurities such as Au, Pt or by introducing radiation-induced defects have been found unsuitable for high voltage devices due to increased leakage, soft breakdown and high ‘ON’ state voltage [27]. Among the techniques proposed to overcome these problems, use of universal contact (UC) [2, 14] is particularly promising. The present work looks in detail at the various aspects arising out of incorporation of UC in BJTs. The UC is incorporated in the transistor by creating additional diffused regions in an otherwise conventional transistor. These diffused regions influence the minority carrier distribution, nature of minority current flow and also some other parameter such as VCE(sat). To study these phenomena, 51 an analytical model is developed and is utilized to understand the effect of universal contact on reverse recovery, VCE(sat) and other related issues. -
ESD) • Styrofoam Cups Safety Guidelines 3
common materials, often found in business and laboratory environments, are all sources of static electricity: • common plastic bags • common types of mending and packing tape • paperwork • common untreated plastic materials Electrostatic Discharge (ESD) • styrofoam cups Safety Guidelines 3. Types of ESD Damage Copyright © 2007 Dialogic Corporation. All rights reserved. Static damage to components can take the form of upset failures or catastrophic failures. 1. Introduction Upset Failure Electrostatic Discharge, or ESD, is defined as the transfer of charge between bodies at different electrical potentials. Upset failures occur when an electrostatic discharge has caused a current flow that is not significant enough to cause total failure, but in use may intermittently If you scuff your feet as you walk across a carpet, electrons move from the result in gate leakage causing software malfunction or incorrect storage of carpet to you, leaving you with excess electrons. Touch a door knob and ZAP! information. The electrons move from you to the knob. You get a shock, at a minimum of 3,000 volts (the threshold of human feeling)! Catastrophic Failure The kind of ESD shock you feel may also be responsible for damaging electronic components in many computers and telecommunications systems. Catastrophic failures can be direct or latent. While it takes an electrostatic discharge of 3,000 volts for you to feel a shock, Direct catastrophic failures occur when a component is damaged to the point much smaller charges, well below the threshold of human sensation, can and where it no longer functions correctly. This is the easiest type of ESD damage often do damage semiconductor devices. -
Download Technical Paper
TECHNICAL PAPER Thermal and Electrical Breakdown Versus Reliability of Ta2O5 under Both – Bipolar Biasing Conditions P. Vašina, T. Zedníček, Z. Sita AVX Czech Republic, s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic J. Sikula and J. Pavelka CNRL TU Brno, Technicka 8, 602 00 Brno, Czech Republic Abstract: Our investigation of breakdown is mainly oriented to find a basic parameters describing the phenomena as well as its impact on reliability and quality of the final product that is “GOOD” tantalum capacitor. Basically, breakdown can be produced by a number of successive processes: thermal breakdown because of increasing conductance by Joule heating, avalanche and field emission break, an electromechanical collapse due to the attractive forces between electrodes electrochemical deterioration, dendrite formation and so on. Breakdown causes destruction in the insulator and across the electrodes mainly by melting and evaporation, sometimes followed by ignition. An identification of breakdown nature can be achieved from VA characteristics. Therefore, we have investigated the operating parameters both in the normal mode, Ta is a positive electrode, as well as in the reverse mode with Ta as a negative one. In the reverse mode we have reported that the thermal breakdown is initiated by an increase of the electrical conductance by Joule heating. Consequently followed in a feedback cycle consisting of temperature - conductivity - current - Joule heat - temperature. In normal mode an electrical breakdown can be stimulated by an increase of the electrical conductance in a channel by an electrical pulse and stored charge leads to the sample destruction. Both of these breakdowns have got a stochastic behaviour and could be hardly localized in advance. -
ECE 255, Diodes and Rectifiers
ECE 255, Diodes and Rectifiers 23 January 2018 In this lecture, we will discuss the use of Zener diode as voltage regulators, diode as rectifiers, and as clamping circuits. 1 Zener Diodes In the reverse biased operation, a Zener diode displays a voltage breakdown where the current rapidly increases within a small range of voltage change. This property can be used to limit the voltage within a small range for a large range of current. The symbol for a Zener diode is shown in Figure 1. Figure 1: The symbol for a Zener diode under reverse biased (Courtesy of Sedra and Smith). Figure 2 shows the i-v relation of a Zener diode near its operating point where the diode is in the breakdown regime. The beginning of the breakdown point is labeled by the current IZK also called the knee current. The oper- ating point can be approximated by an incremental resistance, or dynamic resistance described by the reciprocal of the slope of the point. Since the slope, dI proportional to dV , is large, the incremental resistance is small, generally on the order of a few ohms to a few tens of ohms. The spec sheet usually gives the voltage of the diode at a specified test current IZT . Printed on March 14, 2018 at 10 : 29: W.C. Chew and S.K. Gupta. 1 Figure 2: The i-v characteristic of a Zener diode at its operating point Q (Cour- tesy of Sedra and Smith). The diode can be fabricated to have breakdown voltage of a few volts to a few hundred volts. -
Dissipative Etfe Dielectric Polymer Helps Control Electrostatic Discharge in Wires and Cables
DISSIPATIVE ETFE DIELECTRIC POLYMER HELPS CONTROL ELECTROSTATIC DISCHARGE IN WIRES AND CABLES. by: Chris Yun, Principal Engineer of Aerospace, Defense and Marine, TE Connectivity Recent tests by NASA's Jet Propulsion Laboratory (JPL) and when electrically dissimilar materials rub together. But in wires and Goddard Space Flight Center show that new nano-carbon cross- cables used in spacecraFt, a static charge can be created by the linked ethylene tetrafluoroethylene (ETFE) helps controls impact of charged particles on the material. Space is filled with electrostatic discharge (ESD) in wires and cables used on charged particles that can induce a charge in materials. Satellites spacecraft. in geosynchronous orbits and deep space missions are particularly susceptible because oF higher charge density in GEO and deep Controlling static electricity in electrical interconnection systems is space. essential in spacecraft where ESD events can damage electronics and scuttle the mission. The use of high resistivity dielectric materials and electrically separated surFaces in conjunction with the connected conducting In fact, it has been reported that 54% of spacecraft surFaces oF the spacecraFt Frame promote various forms of anomalies/Failures are caused by electrostatic discharging and spacecraFt charging.3 When the charge builds up in wire and cable charging. 1 For example in April 2010, the Galaxy 15 of electrical interconnection systems, a sudden discharge can telecommunications satellite wandered from its geosynchronous damage connected logic circuits, electronic instruments, and orbit. Reports in space technology literature suggested that computer chips. spacecraFt charging caused the anomaly. Fortunately, a workaround allowed the mission to continue. Worse oFF was the Discharge voltage levels vary widely. -
Capacitive Power Transfer Through Rotational and Sliding Bearings
CAPACITIVE POWER TRANSFER THROUGH ROTATIONAL AND SLIDING BEARINGS by Skyler S. Hagen A thesis submitted in partial fulfillment of the requirements for the degree of: Master of Science (Electrical Engineering) at the UNIVERSITY OF WISCONSIN – MADISON 2016 i Abstract Throughout the history of electrification, applications have existed for the transmission of electrical energy from stationary sources to moving loads. Electrical equipment which is expected to move along tracks, or in cyclical, pivoting, or rotational patterns of motion often requires externally-supplied electrical power to operate. Various techniques have been used with success in the past such as brushes with sliding contacts [1], cable connections (when practical), and various inductive and capacitive contactless power transfer strategies [2],[3],[4],[5]; however, each has its own limitations in longevity and/or complexity. Applications for power transfer to moving loads proliferate in the automotive and traction industries, as well as automation and manufacturing. Both of these categories have strict requirements on reliability. Failure in operation can be hazardous to human life and property in the case of transportation and heavy equipment traction. In the case of manufacturing, the reliability requirement is justified by the large opportunity cost incurred by machine down time. The following is a proposition for a technology which is well suited for many key modern applications. Using the nanofarad-scale capacitance already present in a variety of rotational and linear journal bearings, along with a simple soft-switching high frequency power converter circuit, power levels in the 102-103 watt range have successfully been transferred capacitively from stationary power sources to moving loads. -
Lead-Acid Starter Batteries in Systems Usage Information
Batteries Association ZVEI information leaflet No. 28e Edition October 2017 Lead-acid starter batteries in systems Usage information Preliminary note: This information leaflet aims to help to choose batteries and develop design solutions and operating manuals by providing general information on the usage of lead-acid batteries in vehicles, which extend beyond the relevant standard specifications. This information serves as a recommendation only, and not as a substitute for the battery user’s responsibility to make appropriate decisions. By pooling all gained experience to date, however, it should make the decision easier. Contents 1. General .............................................................................................................................................. 2 2. Mechanical loads.............................................................................................................................. 2 2.1. Battery installation................................................................................................................. 2 2.2. Vibration stress...................................................................................................................... 3 3. Thermal stress..................................................................................................................................3 3.1. Battery temperatures............................................................................................................. 4 3.2. Possible measures regarding thermal loading -
Capacitors and Dielectrics Dielectric - a Non-Conducting Material (Glass, Paper, Rubber….)
Capacitors and Dielectrics Dielectric - A non-conducting material (glass, paper, rubber….) Placing a dielectric material between the plates of a capacitor serves three functions: 1. Maintains a small separation between the plates 2. Increases the maximum operating voltage between the plates. 3. Increases the capacitance In order to prove why the maximum operating voltage and capacitance increases we must look at an atomic description of the dielectric. For now we will show that the capacitance increases by looking at an experimental result: Experiment Since VVCCoo, then Since Q is the same: Coo V CV C V o K CVo C K Dielectric Constant Co Since C > Co , then K > 1 C kCo V V o k kvacuum = 1 (vacuum) k = 1.00059 (air) kglass = 5-10 Material Dielectric Constant k Dielectric Strength (V/m) Air 1.00054 3 Paper 3.5 16 Pyrex glass 4.7 14 A real dielectric is not a perfect insulator and thus you will always have some leakage current between the plates of the capacitor. For a parallel-plate capacitor: C kCo kA C o d From this equation it appears that C can be made as large as possible by decreasing d and thus be able to store a very large amount of charge or equivalently a very large amount of energy. Is there a limit on how much charge (energy) a capacitor can store? YES!! +q K e- - F =qE E e e- E dielectric -q As charge ‘q’ is added to the capacitor plates, the E-field will increase until the dielectric becomes a conductor (dielectric breakdown).