Arxiv:1901.00766V1

Home , Chlorine

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(STM) microscope tunneling im- Ref. by scanning pinpoint possibility a with of a structures pacts such atomic ma- offers deleting of — or method creating surface precise solid most a the nipulating date, to STM — silicon. into lithography atoms impurity single incorporating for sH as H nncersiso hshrsi Si computer in quantum phosphorus the of spins for nuclear blocs on building particular in ac ilb rae ySMtip. 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Tatiana hrfr,oecnepc hta a as that expect can one Therefore, . × 2 ufc.Frttems spre- is mask the First surface. 1 ainlRsac nvriyHge colo cnmc,M Economics, of School Higher University Research National 2 ,adcmie aace ihrmvdslcnaos(SiCl, atoms silicon removed with vacancies combined and ), 2 1 i h aac sSiCl is vacancy the (if 1 eursmethods requires , , 3 2 , neato with interaction ∗ eryM Zhidomirov M. Georgy 3 odsoit noPH into dissociate to 3 × adsorb- -lsraewt nSMtip. STM an with surface 1-Cl × × × 3 1- 1- 2 1 ) . 2 .Ti ae ugssamto opataseparate a plant to method a suggests paper This ). ufc n h aesraewt oa eet Cl, — defects local with surface same Cl the and surface oeso tmcsrcue otiigaPH a containing PH structures and atomic of models eet;mpe h osbewy fPH of these ways of possible each the for mapped configurations defects; atomic beneficial most ftedniyfntoa hoy(F)a rvddby provided as (DFT) package theory software VASP functional the density the of hshrsao noaslcnltiea eutof result a Si(001)-2 as in lattice defects implanting Cl. silicon atomic of on a process adsorption into the phosphine atom discuss we phosphorus the data, a On this barriers. of activation basis corresponding the found and eec ewe h oa nryo hoiae surface chlorinated a of energy Si(001)-2 total the between ference interactions in prxmto GA,PEecag correlation exchange PBE functional (GGA), approximation dient ftesa,wietebto ufc a oee with covered spacing vacuum was a 15 by surface of separated bottom were top slabs the the The while on hydrogen. placed slab, were the molecule of phosphine Chlorine a fixed. and are layers atoms bottom three the layers, atomic 4 periodic by noPH into oa nriso h Si(001)-2 the of energies total PH a VASP. E nde lsi ad method band) elastic (nudged NEB 1 i o nld h nryseto raigthem. creating on spent equation energy therefore the tip), include not STM did an (1) with (e.g., adsorption a encetdo h Si(001)-2 the defects on atomic created the been that had was assumption underlying The 2 pnplrzdcluain eemd ntebasis the on made were calculations polarized Spin h PH The ciainbrir ( barriers Activation il n SiCl and SiCl, , ..mn-adbvcnisi h adsorbate the in bivacancies and mono- i.e. , 3 A. ˚ 2 1 HadPH+H and +H , oeuei h aeu hs ( phase gaseous the in molecule 2 eiin sn hshn dopinon adsorption phosphine using recision, 2 3 e nteS(0)ltiea H(fthe (if PH as lattice Si(001) the in les n osatnN Eltsov N. Konstantin and , isi osbea omtemperature. room at possible is cies × n Hdsoito rget;etbihdthe established fragments; dissociation PH and dopino nielclrntdSi(001)-2 chlorinated ideal an on adsorption 9 3 -lwt h dobt ( adsorbate the with 1-Cl E n rmecretost a e Waals der van to corrections Grimme and , 10 fSine,Mso,Rsi and Russia Moscow, Sciences, of dopineeg a acltda h dif- the as calculated was energy adsorption a × Si(001)-2 h Si(001)-2 The . = el.Ec elcnandegtsilicon eight contained cell Each cells. 4 E H P SiCl 2 I METHOD II. so,Russia oscow, 2 3 aace.W aecetdDFT created have We vacancies. × + rget;i a also was it fragments; 2 ufc oee ya by covered surface 1 E surf .Atvto barriers Activation ). act 7,8 eecluae sn the using calculated were ) − eue eeaie gra- generalized used We . × E × -lsrae( surface 1-Cl surf ufc a modeled was surface 1 2 × × 1 -lbfr h PH the before 1-Cl E 1-Cl − , 11 2 H P E E rvddwithin provided H P 3 H P + 3 surf 3 3 dissociation; ): . E 3 surf n the and ) molecule and ) × (1) × 1- 1 3 2

III. RESULTS AND DISCUSSION

Since there are no studies of phosphine adsorption on chlorinated silicon surface, we tested our calculation 6 method on a well-studied PH3/Si(001)-c(4×2) system . The ground state of an atomically clean Si(001) surface is the c(4×2) reconstruction, in which dimers in neighboring rows are tilted in opposite directions12. Our values for Si interatomic distances in a dimer (2.36 A)˚ and the dimer tilt angle (18◦) on a clean Si(001)-c(4×2) surface are in good agreement with experimental data13 and other calculations (see, e.g., Ref.14). It is known that at room temperature, PH3, as it adsorbs on a Si(001), dis- 6 sociates into PH2 + H in the first stage of the reaction , with the PH2 + H adsorption energy on Si(001) calculated theoretically somewhere between −1.88eV and Figure 1: Structures (top view and side view) and adsorption −2.29eV (see ref.6 and Refs. therein). Our calculated energies of PH3 on Si(001)-2×1-Cl: (a) PH3 on top of the chlorine layer, (b) PH3 under the chlorine layer, (c) substitu- value Ea = −2.03 eV is in good agreement with previ- ous calculations and with an experimental estimate of tion PH2 instead of Cl with HCl molecule formation in gas phase. −1.8 eV made in Ref.6 on the basis of thermal-desorption spectroscopy data15. Distance d from a P atom to the nearest Si atom was 2.28 A,˚ from a dissociated H atom to the Si atom d(Si-H) = 1.50 A,˚ from a P atom to the bedding of an NH2 fragment instead of a chlorine atom is possible (with formation of HCl molecule) if NH3 is incor- H atom in the PH2 fragment d=1.44 A˚ (d(P-H) = 1.43 A˚ porated under the chlorine layer. Our calculated energy in a free PH3 molecule). values for PH3 on-top adsorption (−0.01 eV, Fig. 1a), PH3 adsorption under the chlorine layer between Si dimer . A. PH3 adsorption on Si(001)-2×1-Cl rows (0 40 eV, Fig. 1b), and the adsorption of a PH2 fragment bound to a Si atom with a HCl molecule close to the surface (0.42eV, Fig. 1c), are close to values reported After a Si(001) surface is chlorinated, the c(4×2) re- in Ref.14 for the energies of initial (−0.02 eV), transi- construction is partially removed and changed into the tional (0.40 eV) and final (0.45 eV) states of substituting (2×1) reconstruction. Our calculated value for the bond NH instead of a Cl atom with HCl molecule formation. length d(Si-Cl) is 2.07 A,˚ which is in agreement with both 2 This suggests that the transitional state energies of NH experimental13 and theoretical14,16 data. The distance 3 and PH on Si(001)-2×1-Cl may also be approximately between the Si atoms in a dimer increases by 0.07 A˚ 3 the same. Our calculated initial, transitional, and fi- after chlorine adsorption (d(Si–Si) = 2.43 A).˚ We also nal state PH adsorption energies, and activation barrier calculated the energies and activation barriers for phos- 3 data from Ref.14, bring us to a conclusion that a PH phine adsorption and dissociation for an ideal (defect- 2 fragment can only be placed on Si(001)-2×1-Cl instead free) Si(001)-2×1-Cl surface and for the same surface of a Cl atom if it overcomes the activation barrier of with vacancy defects Cl, Cl , SiCl and SiCl . For the 2 2 ≈ 1.6 eV. Thus, reaction of substitution a PH fragment ideal surface, we looked at two PH adsorption scenar- 2 3 instead of a Cl atom on an ideal Si(001)-2×1-Cl surface is ios: the molecule adsorbs on top of or under the chlorine endothermic (Ea > 0 in the final state) and unfavorable. layer. For a defected surface (Cl, Cl2, SiCl, SiCl2 vacancies), we looked at PH3 adsorption and dissociation in all possible scenarios, of which only those were included in the paper whose final state is more preferable than the 2. Si(001)-2×1-Cl with a single vacancy in a chlorine initial state. monolayer

As a phosphine molecule is adsorbed into a single va- × 1. Defect-free Si(001)-2 1-Cl cancy in a chlorine monolayer on Si(001)-2×1-Cl, PH3 takes the place vacated by a chlorine atom (Fig. 2a). The adsorbed PH3 molecule remains close to the sur- There is no activation barrier for phosphine adsorption. face (Fig. 1a). There is almost no interaction with chlo- The calculated Si-P bond length is 2.31 A,˚ distance d(P– rine (Ea = −0.01 eV), and the distance from the P atom H) = 1.41 A.˚ to the nearest Cl atom is 3.63 A.˚ The molecule is adsorbed Phosphine, dissociating in a single chlorine vacancy to without any activation barrier and does not dissociate. produce a PH fragment, also necessarily produces an H2 A study of interaction between ammonia (NH3) and a molecule (Fig. 2b) because there are no more chlorine- 14 Si(001)-2×1 chlorinated surface demonstrated that em- free places on the surface. This PH + H2 dissociation 3

Figure 2: Structures (top view and side view) and adsorption energies of phosphine and its fragments into a single vacancy in chlorine monolayer on Si(001)-2×1-Cl: (a) PH3 adsorption; (b) PH + H2 (g) adsorption.

is unfavorable because the adsorption energy of this system (Ea = −0.21eV) is smaller than the energy of the adsorbed PH3 molecule (Ea = −0.91 eV). Figure 3: Structures (top view and side view) and adsorption energies of phosphine and its fragments into a double vacancy in chlorine monolayer on Si(001)-2×1-Cl: (a) PH3 adsorbed molecule; (b) intermediate state in the process of PH3 dissociation into PH2 + H (c); (d) PH fragment in the center of a 3. Si(001)-2×1-Cl with a double vacancy in a chlorine Si-Si dimer, and H2 molecule in gas phase. monolayer

Figure 3a shows a PH3 molecule adsorbed on a Si- 4. Si(001)-2×1-Cl with a combined SiCl vacancy Si dimer free of chlorine atoms. A phosphorus atom is bound to one of the silicon atoms. The Si-P bond length In phosphine adsorption into combined vacancies in ˚ d ˚ is 2.30 A ( (P-H) = 1.41 A); the adsorption energy is which both silicon and chlorine have been removed, a − . 1 37 eV; there is no activation barrier (Fig. 3a). How- phosphine molecule approaching such a Si(001)-2×1-Cl ever, a phosphine molecule in a double chlorine vacancy surface may create a single bond either with a lower- can dissociate into PH2 and H fragments and thus create layer silicon atom (Fig. 4a) or with the remaining sili- the most energetically favorable state (Ea = −2.37 eV, con atom of a broken dimer (Fig. 4d) because PH3 can Fig. 3c). The dissociation process goes through an inter- not create bonds to two Si atoms. There is no activa- mediate state shown in Fig. 3b and requires an activation barrier in both cases but the latter option is more tion energy of 0.25 eV. While on a clean Si(001)-c(4×2) E − . 6 preferable (its a = 1 09 eV against the former option’s surface, PH2 dissociates further into PH or P , it is not Ea = −0.79 eV). Bonded to the top Si atom (Fig. 4d), the preferable for it to do so on a chlorinated surface because phosphine molecule dissociates into PH + H2 (Fig. 4c) there are no unoccupied space for the hydrogen atoms. with almost no activation barrier (Eact = 0.02 eV). If Nonetheless, there is yet another state with a negative the phosphine molecule is bonded to a lower-layer sili- adsorption energy (Fig. 3d), in which a PH fragment oc- con atom (Fig. 4a), its dissociation results in the same d cupies a bridge position over the Si-Si dimer ( (Si-P) = ﬁnal state (Fig. 4c) but only over an activation bar- ˚ 2.29 A), while the remaining hydrogen atoms form an H2 rier of 0.13 eV (Fig. 4b). The structure in which the E − . molecule. This state ( a = 1 30 eV) is less preferential PH fragment is incorporated into the silicon lattice and than phosphine molecule adsorption (Ea = −1.37 eV). an H2 molecule is formed (Fig. 4c) is the most prefer- From this adsorption site, the phosphorus atom can (in able (Ea = −2.64 eV, phosphorus bond lengths to two principle) migrate to the position between two silicon lower-layer silicon atoms are 2.32 A,˚ to the dimer Si atom dimers, so that the P atom is bound to three Si atoms 2.37 A,˚ to the hydrogen atom 1.42 A).˚ (one Si atom of each dimer and one Si atom of underlying layer) and H atom remains on the free silicon atom. Note, this position is the most favorable on a clean silicon × surface6. However, in the presence of only one chlorine- 5. Si(001)-2 1-Cl with a combined SiCl2 vacancy free Si dimer, this state is less favorable than those shown in Fig. 3, because one of the Si atoms bound to P is also As for a SiCl vacancy, the phosphine molecule is ad- bound to one chlorine atom. This is in agreement with sorbed into a SiCl2 vacancy either through bonding to a the ﬁnding6 that three free dimers on a Si(001)-c(4×2) lower-layer silicon atom (Fig. 5a) or occupying a position surface are required for full phosphine dissociation. close to a silicon atom in broken dimer (Fig. 5d). Nei- 4

Figure 4: Structures (top view and side view) and adsorp- Figure 5: Structures (top view and side view) and adsorption tion energies of phosphine and its fragments into a combined energies of phosphine and its fragments into a combined SiCl2 SiCl vacancy on Si(001)-2×1-Cl: (a) PH3 molecule adsorbed vacancy on Si(001)-2×1-Cl: (a) PH3 molecule bound to a on lower-layer silicon atom; (b) intermediate state in the pro- lower-layer silicon atom; (b) intermediate state between (a) cess of PH3 dissociation into PH + H2 (c); (d) PH3 molecule and (c); (c) the most preferable state after PH3 dissociation adsorbed on the remaining silicon atom of a broken dimer. into PH2 and H; (d) PH3 molecule bound to a broken-bond dimer silicon atom; (e) intermediate state between (d) and (c). ther process has an activation barrier. A PH3 molecule in a SiCl2 vacancy can transfer one hydrogen atom to the broken-bond silicon atom, while the remaining PH2 verging from that line by one or several lattice spacings), fragment can meanwhile form two bonds to silicon atoms the exchange interaction between them oscillated and de- from the lower layer (Fig. 5c). The adsorption energy is creased exponentially, which is a serious problem in the minimal in this state (Ea = −2.66 eV), the Si-P bond way of creating a two-qubit register of a quantum com- lengths are A˚ (d(P-H) = 1.42 A).˚ PH3 dissociation into puter. PH2 +H from positions shown in Fig. 5a and Fig. 5d re- We suggest a procedure for incorporating phosphorus quires activation energies of 0.11eV (Fig. 5b) and 0.50eV atoms into the top Si(001)-2×1 layer with atomic preci- (Fig. 5e), respectively. Note that the reaction paths with sion. It is based on two operations. The first one is STM the HCl molecule formation are less favorable than the lithography on Si(001) surface with a chlorine monolayer × pathways with the H2 formation for the Si(001)-2 1-Cl used as the resist to create atomic defects containing a surface with Cl, Cl2, and SiCl vacancies. silicon vacancy. We believe that there is a controlled way to create vacancies with silicon atoms for Si(001)-2×1-Cl surfaces. The second operation is phosphine adsorption B. Incorporating a phosphorus atom into the on defects containing silicon vacancies. According to our Si(001) lattice calculations summarized below, phosphine adsorption on such defects results in incorporating a phosphorus atom If hydrogen resist is used on Si(001), it is only possi- exactly into the site previously occupied by a silicon atom ble to plant a phosphorus atom on a Si(001) surface with removed with an STM tip. an error of several lattice spacings17 because three free As phosphine is adsorbed onto a perfect Si(001)-2×1- 6 silicon dimers are required for PH3 dissociation , and as Cl surface, there is little interaction between the gas and the surface is heated up, any of the neighboring substrate the chlorine monolayer because the PH3 adsorption en- atoms may be substituted by phosphorus atom. This ergy is close to zero (−0.01eV). A phosphine molecule precision is sufficient to create a single electron transis- dissociation, so that the PH2 fragment is put into the tor to read the qubit state but not to create a network place of a chlorine atom and an HCl molecule is formed, of qubits, where phosphorus atoms must be incorporated is endothermic process and requires an activation energy exactly into the positions of specifically selected silicon of about ∼ 1.6 eV, which makes this process unfavorable atoms. In Refs.18,19, it was demonstrated that, if two at room temperature. neighboring phosphorus atoms are not located precisely If there is a single vacancy in the chlorine monolayer, along high-symmetry directions on a silicon surface (di- the phosphine molecule settles into the vacant place and 5 does not dissociate. If there is a double vacancy in the tions. chlorine monolayer, i.e. the phosphine molecule is adsorbed onto a free Si-Si dimer, it dissociates into PH2 and H at room temperature (the activation energy is IV. CONCLUSIONS 0.25 eV). In this case P atom incorporation into silicon surface layer requires two additional Si dimers free from ◦ 6 On the basis of DFT modeling, we studied phosphine Cl atoms and heating to 350 C . × At room temperature, phosphine adsorption onto a adsorption on Si(001)-2 1-Cl surface, including surface Si(001)-2×1-Cl surface with combined vacancies (SiCl or with Cl, Cl2, SiCl, and SiCl2 vacancies. We have demonstrated that it is possible to incorporate a phosphorus SiCl2) results in phosphine dissociation, with the fragments taking the most favorable positions: PH in the atom into the silicon lattice if phosphine is adsorbed into defects with a silicon vacancy. We found that phosphorus SiCl vacancy, PH2 + H in the SiCl2 vacancy. The adsorp- is best positioned to occupy the vacant place in the lattice tion into the SiCl and SiCl2 vacancies (Ea = −2.64eV as part of a PH fragment in a SiCl vacancy (Fig. 4c) or and Ea = −2.66eV, respectively) are more preferable as part of a PH2 fragment in a SiCl2 vacancy (Fig. 5c). than into the Cl and Cl2 vacancies (Ea = −0.91eV and E − . Phosphine molecules adsorbed on a chlorinated defect- a = 2 37 eV, respectively). Thus, it is possible to × incorporate a phosphorus atom into a silicon lattice at free Si(001)-2 1 surface are not bound to silicon. room temperature as part of a PH fragment adsorbed on Our calculations confirm that it is possible to incorpo- a SiCl vacancy or PH fragment adsorbed on a SiCl va- rate a phosphorus atom precisely into a specific place of 2 2 × cancy without undesirable heating, which is not possible the silicon lattice on Si(001)-2 1 through a chemisorbed if chemisorbed hydrogen is used as the resist2. chlorine monolayer mask. As we have demonstrated, op- The resulting surface is Si(100) under a chlorine mono- erationally this requires a specific type of vacancies on the × layer, with phosphorus atoms embedded in the silicon Si(001)-2 1-Cl surface, and we expect STM lithography lattice. One or two hydrogen atoms may be bound with to create specific types of defects to be developed. each phosphorus atom. To use these phosphorus atoms V. ACKNOWLEDGEMENTS as quantum computer elements (such as registers, wiring, or convertors), chlorine and hydrogen should be removed, This study was supported by the Russian Science and a sufficiently thick crystalline silicon layer (25 to 50 Foundation (Grant 16-12-00050). We also thank the nm) should be grown on top of the surface enough to Joint Supercomputer Center of RAS for providing the minimize the impact of the surface on computing opera- necessary computing power.

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