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Evaluation of Doping in 4H-Sic by Optical Spectroscopies Pawel Kwasnicki

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Evaluation of Doping in 4H-Sic by Optical Spectroscopies Pawel Kwasnicki Evaluation of doping in 4H-SiC by optical spectroscopies Pawel Kwasnicki To cite this version: Pawel Kwasnicki. Evaluation of doping in 4H-SiC by optical spectroscopies. Materials Science [cond- mat.mtrl-sci]. Université Montpellier II - Sciences et Techniques du Languedoc, 2014. English. NNT : 2014MON20145. tel-01713581 HAL Id: tel-01713581 https://tel.archives-ouvertes.fr/tel-01713581 Submitted on 20 Feb 2018 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. UNIVERSITE MONTPELLIER II SCIENCES ET TECHNIQUES DU LANGUEDOC T H E S E pour obtenir le grade de DOCTEUR DE L'UNIVERSITE MONTPELLIER II Discipline : Physique Ecole Doctorale : Information Structures Systèmes présentée et soutenue publiquement par Pawel Kwasnicki le 09 décembre 2014 Evaluation of doping in 4H-SiC by optical spectroscopies JURY Konstantinos ZEKENTES Principal Researcher FORTH Rapporteur Marcin ZIELINSKI Docteur ingénieur NOVASIC Rapporteur Didier CHAUSSENDE Directeur de Recherche Université Grenoble Alpes Examinateur Ahmed-Azmi ZAHAB Professeur Université Montpellier II Examinateur Sandrine JUILLAGUET Maître de Conférences Université Montpellier II Directrice de Thèse Herve PEYRE Maître de Conférences Un iversité Montpellier II Co- Directeur Jean CAMASSEL Professeur Université Montpellier II Invité UNIVERSITE MONTPELLIER II SCIENCES ET TECHNIQUES DU LANGUEDOC T H E S E pour obtenir le grade de DOCTEUR DE L'UNIVERSITE MONTPELLIER II Discipline : Physique Ecole Doctorale : Information Structures Systèmes présentée et soutenue publiquement par Pawel Kwasnicki le 09 décembre 2014 Evaluation of doping in 4H-SiC by optical spectroscopies JURY Konstantinos ZEKENTES Principal Researcher FORTH Rapporteur Marcin ZIELINSKI Docteur ingénieur NOVASIC Rapporteur Didier CHAUSSENDE Directeur de Recherche Université Grenoble Alpes Examinateur Ahmed-Azmi ZAHAB Professeur Université Montpellier II Examinateur Sandrine JUILLAGUET Maître de Conférences Université Montpellier II Directrice de Thèse Herve PEYRE Maître de Conférences Université Montpellier II Co- Directeur Jean CAMASSEL Professeur Université Montpellier II Invité Acknowledgements orking on the Ph.D. has been a wonderful and often overwhelming experience. Without the help of many people the overcoming the problems would not be possible. I am indebted to many people for making the time working on my Ph.D. an unforgettable experience. First of all I would like to express my deepest appreciation to my supervisor dr. Sandrine Juillaguet as well as my co-supervisor dr. Hervé Peyre . Without their guidance, encouragement and support during the research, it would have been impossible for me to complete this thesis. They have always been ready to offer their help whenever needed. We had many lively discussions during these three years and I have learned a lot from them. I also want to thank dr. Sylvie Contreras and dr. Leszek Konczewicz, whose help of understanding the electrical measurement aspect of my work was tremendous and whose scientific work inspired me a lot. I would particularly like to thank dr. Leszek Konczewicz for his support and help to overcome the scientific problems as well as aid whenever I needed it. My work has greatly benefited from discussions, suggestions and kind encouragement from materials, devices, sensors and bionanophotonics team in Laboratoir Charles Coulomb at University Montpellier 2 especially: Jean-Roch Huntzinger, Perine Landois, Antoine Tiberj and Paillet Matthieu. I would like especially thank to Prof. Jean Camassel for fruitful and interesting discussions. I wish to thank all group members and technical staff in laboratory, especially Philippe Arcad and dr. Nina Diakonova for their help with FTIR measurements, Bernard Boyer for his help with the SIMS measurements and dr. Thierry Michel and David Maurin for their help with mirco-Raman measurements. I have been very privileged to get to know and to collaborate with many other great people from NetFiSiC project who became friends over the last three years. I learned a lot from you about life, research, how to tackle new problems and how to develop techniques to solve them. I would like to thank to Marcin Zielinski and Roxana Arvinte for fruitful collaboration, providing samples and many interesting discussions about growth aspects. For this dissertation I would like to thank my reading committee members: Marcin Zielinski and Konstantinos Zekentes for their time, interest, and helpful comments. I would also like to thank the other three members of my oral defense committee Didier Chaussende, Ahmed-Azmi Zahab, Jean Camassel. I will always remember the supports, and pleasant time we had with my friends from NetFiSiC qrupe: dr. Kassem Al Assaad, Chamseddine Bouhafs, dr. Nikolaos Tsavdaris, Kanaparin Ariyawong, Roxana Arvinte, Tomasz SledziewskI, dr. Narendraraj Chandran, Matthieu Florentin, Aleksey Mikhaylov, dr. Marilena Vivona, Alberto Salinaro, dr. Gediminas Liaugaudas, dr. Mamour Sall, dr. Dhanasekaran Vikraman, dr.Florian Chevalier. I’d also like to thank my former professors Igor Tralle who supported me with many advices during my master study and helped me to start my Ph.D. study. Finally, a deep sense of appreciation goes towards all of my family for providing me with the endless love and support I needed to pursue and achieve my goals in life. I would like to thank my mom, dad, sister and brothers for their infinite support throughout everything. Dziękuję za wsparcie pomoc i obecność. A very special thanks goes to my wife for here love and encouragements during my work in Montpellier. This work was supported by European Union Marie Curie project NetFiSiC. Introduction Today we are still working with Si and SiO 2 to produce the electronic devices. However, new materials are required for some special applications since the characteristic properties of material play a key role for the performance of the fabricated electronic devices. Silicon carbide is one of such promising materials for niche applications. Due to its extreme thermal stability, wide bandgap and high breakdown filed the attention given to SiC has progressed recently. Although SiC has been known since the first observation by J.J. Berzelius in 1842, it was in the late 1980s that SiC wafers became commercially available after the breakthrough had been made in growth technology. Up to now the material quality and the diameter of silicon carbide wafers have steadily been improved. Due to continuous improvement in crystal growth techniques and experimental methods in the investigation of crystalline materials, as well as in theoretical work based on modern physics and high computational power, the science of semiconductors has grown to an enormous size and has reached a state of maturity. However, concerning SiC material, still many material related issues have to be solved before new alternatives can compete in the market. One of the important points is the control of doping during epitaxial growth and possibility of its evaluation. There are several options to determine the doping level in SiC, but some of them damage the epilayer or required special sample’s preparation. To overcome these problems one of possible way is to use contactless and non-destructive optical measurements like Photoluminescence or Raman scattering spectroscopies. The objective of this thesis is to investigate physical and electrical properties of 4H-SiC focusing on the evaluation of the doping / carrier concentration using non-destructive and contactless methods. This work was done in framework of NetFISiC European program (2011-2015). The main scientific objective of NetFISiC (ITN Marie Curie project) is to provide Silicon material of various polytypes with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts are mostly dedicated to solve the problems faced by important devices like MOSFET and Schottky diodes. Besides, some fundamental researches are performed both on the growth aspect and on new and innovating devices. Applications of SiC in high temperature, high power and harsh environment are main targets. To this end, twelve partners are involved in the NetFISiC project, three of which are companies (INFINEON, ACREO and NOVASiC). The partners were chosen for their recognized expertise in the field of SiC material and / or specific related techniques. The consortium is divided in three technical work-packages: • WP1 (Material growth and rela ted aspects) is dedicated to the development of less mature polytypes than 4H (3C and 15R). 1 • WP2 (Characterization of material and functional interfaces) is in charge of studying the properties of the materials, surface and interfaces. This WP makes the important link between the growth (WP1) and the device manufacturing group (WP3). • WP3 (Devices and demonstrators) is in charge of the electrical testing and fabrication of the targeted devices. The work of these three years during the thesis has been carried out in close collaboration with many partners in the NetFISiC project. But we chose
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