AMD Athlon Northbridge with 4X AGP and Next Generation Memory
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ATX-945G Industrial Motherboard in ATX Form Factor with Intel® 945G Chipset
ATX-945G Industrial Motherboard in ATX form factor with Intel® 945G chipset Supports Intel® Core™2 Duo, Pentium® D CPU on LGA775 socket 1066/800/533MHz Front Side Bus Intel® Graphics Media Accelerator 950 Dual Channel DDR2 DIMM, maximum 4GB Integrated PCI Express LAN, USB 2.0 and SATA 3Gb/s ATX-945G Product Overview The ATX-945G is an ATX form factor single-processor (x8) and SATA round out the package for a powerful industrial motherboard that is based on the Intel® 945G industrial PC. I/O features of the ATX-945G include a chipset with ICH7 I/O Controller Hub. It supports the Intel® 32-bit/33MHz PCI Bus, 16-bit/8MHz ISA bus, 1x PCI Express Core™2 Duo, Pentium® D, Pentium® 4 with Hyper-Threading x16 slot, 2x PCI Express x1 slots, 3x PCI slots, 1x ISA slot Technology, or Celeron® D Processor on the LGA775 socket, (shared w/ PCI), onboard Gigabit Ethernet, LPC, EIDE Ultra 1066/800/533MHz Front Side Bus, Dual Channel DDR2 DIMM ATA/100, 4 channels SATA 3Gb/s, Mini PCI card slot, UART 667/533/400MHz, up to 4 DIMMs and a maximum of 4GB. The compatible serial ports, parallel port, floppy drive port, HD Intel® Graphic Media Accelerator 950 technology with Audio, and PS/2 Keyboard and Mouse ports. 2048x1536x8bit at 75Hz resolution, PCI Express LAN, USB 2.0 Block Diagram CPU Core™2 Duo Pentium® D LGA775 package 533/800/1066MHz FSB Dual-Core Hyper-Threading 533/800/1066 MHz FSB D I M Northbridge DDR Channel A M ® x Intel 945G GMCH 2 DDRII 400/533/667 MHz D I CRT M M DB-15 DDR Channel B x 2 Discrete PCIe x16 Graphics DMI Interface 2 GB/s IDE Device -
Double-Data Rate DDR Memory Review
International Journal of Advanced Engineering and Nano Technology (IJAENT) ISSN: 2347-6389, Volume-2 Issue-2, January 2015 Double-Data Rate DDR Memory Review Ahmed Shamil Mustafa, Mohammed Jabbar Mohammed, Muthana Najim Abdulleh technique became DDR. The technology, synchronous Abstract —Computer is one most important twenty-first century dynamic random access memory (SDRAM) was discovered technology, the large volume of data and store it makes of old in the beginning 1990s to make the computer more powerful, memories are not enough. In this paper we offer a historical in that time was used Traditional DRAM an asynchronous overview of Double Data Rate (DDR) memory being play a key interface it means work independently of the processor. With role in the development of computer with also who passed him in the end of the nineties of the last century and the beginning of addition to the basics of their work and develop in the future. 2000s, specifically in 2000 became a priority for developers Index Terms —Double-Data Rate DDR, Synchronous Dynamic and manufacturers is to produce or something development Random Access Memory (SDRAM) new to increase the performance of the computer, DDR double data rate ( also called DDR 1) is a new interface I. INTRODUCTION method was developed, this made data transfer on both the In the twenty-first century with technology developments, rising and falling edges of the clock signal it has the ability to the entry of the computer at all areas of scientific and social transfer data twice faster than earlier versions, such as life. With the increased demand for computer and the large SDRAM, the had used lower clock rate (100-200MHz), less volume of data has become the task of manufacturing power (2.5v) and high speed(1600-3200 MB/s). -
Technical Note Is to Provide an Figure 9: DQS WRITE Postamble and Preamble
TN-46-05 GENERAL DDR SDRAM FUNCTIONALITY TECHNICAL GENERAL DDR SDRAM NOTE FUNCTIONALITY INTRODUCTION The migration from single data rate synchronous Table of Contents DRAM (SDR) to double data rate synchronous DRAM DDR vs. SDR Functionality ............................... 2 (DDR) memory is upon us. Although there are many Table 1: SDR to DDR Quick Reference ................. 1 similarities, DDR technology also provides notable Figure 1: Functional Block Diagram .................... 2 product enhancements. Figure 4: Example of DDR Command Bus .......... 3 In general, double data rate memory provides 2n-Prefetch Architecture ................................. 3 source-synchronous data capture at a rate of twice the Figure 2: Block Diagram 2n-Prefetch READ ........ 3 clock frequency. Therefore, a DDR266 device with a Figure 3: Block Diagram 2n-Prefetch WRITE ....... 3 clock frequency of 133 MHz has a peak data transfer rate of 266 Mb/s or 2.1 GB/s for a x64 DIMM. This is Minimum Time Slots ........................................ 3 accomplished by utilizing a 2n-prefetch architecture Figure 5: 2n-Prefetch READ Slot Timing ............. 4 where the internal data bus is twice the width of the Figure 6: 2n-Prefetch WRITE Slot Timing ............ 5 external data bus and data capture occurs twice per Figure 7: READ Command Slots ........................... 6 clock cycle. To provide high-speed signal integrity, the Strobe-Based Data Bus ..................................... 4 DDR SDRAM utilizes a bidirectional data strobe, Preamble and Postamble ................................. 7 SSTL_2 interface with differential inputs and clocks. Figure 8: DQS READ Postamble and Preamble ... 7 The objective of this technical note is to provide an Figure 9: DQS WRITE Postamble and Preamble . 8 overview of the 2n-prefetch architecture, a strobe-based SSTL_2 Interface .............................................. -
Motherboards, Processors, and Memory
220-1001 COPYRIGHTED MATERIAL c01.indd 03/23/2019 Page 1 Chapter Motherboards, Processors, and Memory THE FOLLOWING COMPTIA A+ 220-1001 OBJECTIVES ARE COVERED IN THIS CHAPTER: ✓ 3.3 Given a scenario, install RAM types. ■ RAM types ■ SODIMM ■ DDR2 ■ DDR3 ■ DDR4 ■ Single channel ■ Dual channel ■ Triple channel ■ Error correcting ■ Parity vs. non-parity ✓ 3.5 Given a scenario, install and configure motherboards, CPUs, and add-on cards. ■ Motherboard form factor ■ ATX ■ mATX ■ ITX ■ mITX ■ Motherboard connectors types ■ PCI ■ PCIe ■ Riser card ■ Socket types c01.indd 03/23/2019 Page 3 ■ SATA ■ IDE ■ Front panel connector ■ Internal USB connector ■ BIOS/UEFI settings ■ Boot options ■ Firmware upgrades ■ Security settings ■ Interface configurations ■ Security ■ Passwords ■ Drive encryption ■ TPM ■ LoJack ■ Secure boot ■ CMOS battery ■ CPU features ■ Single-core ■ Multicore ■ Virtual technology ■ Hyperthreading ■ Speeds ■ Overclocking ■ Integrated GPU ■ Compatibility ■ AMD ■ Intel ■ Cooling mechanism ■ Fans ■ Heat sink ■ Liquid ■ Thermal paste c01.indd 03/23/2019 Page 4 A personal computer (PC) is a computing device made up of many distinct electronic components that all function together in order to accomplish some useful task, such as adding up the numbers in a spreadsheet or helping you to write a letter. Note that this defi nition describes a computer as having many distinct parts that work together. Most PCs today are modular. That is, they have components that can be removed and replaced with another component of the same function but with different specifi cations in order to improve performance. Each component has a specifi c function. Much of the computing industry today is focused on smaller devices, such as laptops, tablets, and smartphones. -
ECS P4M890T-M2 Manual.Pdf
Preface Copyright This publication, including all photographs, illustrations and software, is protected under international copyright laws, with all rights reserved. Neither this manual, nor any of the material contained herein, may be reproduced without written consent of the author. Version 1.0B Disclaimer The information in this document is subject to change without notice. The manufacturer makes no representations or warranties with respect to the contents hereof and specifically disclaims any implied warranties of merchantability or fitness for any particular purpose. The manufacturer reserves the right to revise this publication and to make changes from time to time in the content hereof without obligation of the manufacturer to notify any person of such revision or changes. Trademark Recognition Microsoft, MS-DOS and Windows are registered trademarks of Microsoft Corp. MMX, Pentium, Pentium-II, Pentium-III, Pentium-4, Celeron are registered trademarks of Intel Corporation. Other product names used in this manual are the properties of their respective owners and are acknowledged. Federal Communications Commission (FCC) This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reason- able protection against harmful interference in a residential installation. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference -
Comparison of High Performance Northbridge Architectures in Multiprocessor Servers
Comparison of High Performance Northbridge Architectures in Multiprocessor Servers Michael Koontz MS CpE Scholarly Paper Advisor: Dr. Jens-Peter Kaps Co-Advisor: Dr. Daniel Tabak - 1 - Table of Contents 1. Introduction ...............................................................................................................3 2. The x86-64 Instruction Set Architecture (ISA) ...................................................... 3 3. Memory Coherency ...................................................................................................4 4. The MOESI and MESI Cache Coherency Models.................................................8 5. Scalable Coherent Interface (SCI) and HyperTransport ....................................14 6. Fully-Buffered DIMMS ..........................................................................................16 7. The AMD Opteron Northbridge ............................................................................19 8. The Intel Blackford Northbridge Architecture .................................................... 27 9. Performance and Power Consumption .................................................................32 10. Additional Considerations ..................................................................................34 11. Conclusion ............................................................................................................ 36 - 2 - 1. Introduction With the continuing growth of today’s multi-media, Internet based culture, businesses are becoming more dependent -
Design and Implementation of High Speed DDR SDRAM Controller on FPGA
International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181 Vol. 4 Issue 07, July-2015 Design and Implementation of High Speed DDR SDRAM Controller on FPGA Veena H K Dr. A H Masthan Ali M.Tech Student, Department of ECE, Associate Professor, Department of ECE, Sambhram Institute of Technology, Bangalore, Sambhram Institute of Technology, Bangalore, Karnataka, India Karnataka, India Abstract — The dedicated memory controller is important is and column. To point to a location in the memory these three the applications in high end applications where it doesn’t are mandatory. The ACTIVE command signal along with contains microprocessors. Command signals for memory registered address bits point to the specific bank and row to be refresh, read and write operation and SDRAM initialisation has accessed. And column is given by READ/WRITE signal been provided by memory controller. Our work will focus on along with the registered address bits that shall point to a FPGA implementation of Double Data Rate (DDR) SDRAM location for burst access. The DDR SDRAM interface makes controller. The DDR SDRAM controller is located in between higher transfer rates possible compared to single data rate the DDR SDRAM and bus master. The operations of DDR (SDR) SDRAM, by more firm control of the timing of the SDRAM controller is to simplify the SDRAM command data and clock signals. Implementations frequently have to use interface to the standard system read/ write interface and also schemes such as phase-locked loops (PLL) and self- optimization of the access time of read/write cycle. The proposed design will offers effective power utilization, reduce the gate calibration to reach the required timing precision [1][2]. -
AMD Opteron™ 4200 Series Processor
AMD Opteron™ 4200 Series Processor AMD Opteron™ 4200 Series Processor What’s new in the AMD Opteron™ 4200 Series Processor (Codenamed “Valencia”) and the new “Bulldozer” Microarchitecture? Platform Processor Socket Chipset Opteron 4000 Opteron 4200 C32 56x0 / 5100 (codenamed “San Marino” or “Adelaide”) (codenamed “Valencia") (with BIOS update) In their first microarchitecture rebuild since Opteron, AMD introduces the Bulldozer module, implemented in both the Opteron 4200 and 6200 Series. The modules are engineered to emphasize throughput, core count, and parallel server workloads. A module consists of two tightly coupled cores, in which some core resources are shared. The effect is between a core with two threads and a dual-core processor, in which each core is fully independent. Performance, scalability, and efficiency for today’s applications. Processor Features Platform Features . 32nm process technology . 2 DDR3 memory channels, LRDIMM, RDIMM, UDIMM . Up to 8 Bulldozer cores up to 1600 GT/s . Evolved integrated northbridge o 1.25 and 1.35V Low-voltage DRAM o 8M L3 cache o 1.5V also available o Bandwidth improvements . 2 HyperTransport™ technology 3.0 links up to 6.4 GT/s o Memory capacity improvements . Advanced Platform Management Link (APML) for o Power efficiency improvements system management . Up to16MB combined L2 + L3 cache . Compatible with existing C32 socket with BIOS update Product Specifications Clock Frequency / Turbo L3 Max Memory System Bus Process TDP1 / ACP2 Model Cores L2 Cache Core Frequency (GHz) Cache Speed Speed 4284 3.0 / 3.7 8 4 x 2MB 4280 2.8 / 3.5 95 W / 75W 4238 3.3 / 3.7 8MB DDR3-1600 MHz 6.4 GT/s 4234 3.1 / 3.5 6 3 x 2MB 32nm 4226 2.7 / 3.1 4274 HE 2.5 / 3.5 8 4 x 2MB 65 W / 50W 8MB DDR3-1600 MHz 6.4 GT/s 4228 HE 2.8 / 3.6 6 3 x 2MB 35W / 32W 4256 EE 1.6 / 2.8 8 4 x 2MB 8MB DDR3-1600 MHz 6.4 GT/s 1 TDP stands for Thermal Design Power. -
ESPRIMO Mobile V5505
Issue February 2008 ESPRIMO Mobile V5505 Pages 3 The ESPRIMO Mobile V5505 is a versatile all-round notebook, equally suitable for occasional or professional users, and heavy-duty operation by mobile field sales people. This professional notebook features a superb 15.4-inch WXGA display, an ergonomic keyboard and a built-in super multi DVD writer drive. LAN are integrated for easier connection, courtesy of the latest Intel® Centrino® Duo Mobile Technology based on Intel® 965GM chipset. It has great connections; four USB ports and an integrated 3in1 Card Reader. Connect to printers, scanners, cameras or any other accessory. Elegance Designed for the most demanding mobile users, ESPRIMO Mobile is the perfect synthesis of form, function and style. Power-saving Intel® Centrino® Duo Mobile for long independent working Increased productivity due to latest Intel® 965GM chipset which supports latest technology standards: DDR2 memory, PCI Express and S-ATA Ergonomics Enjoy the viewing quality of brilliant 15.4-inch WXGA TFT display Convenient working with full sized keyboard Connectivity Ideal connectivity through WLAN. Antennas are integrated for best signal reception. Variety of interfaces for best connection to the peripherals Reliability Germany‘s quality standard Award-winning best-in-class manufacturing Mechanical and function stability through extensive quality tests Data Sheet ⏐ Issue: February 2008⏐ ESPRIMO Mobile V5505 Page 2 / 3 System ESPRIMO Mobile V5505 Processor Intel® Core™2 Duo Processor Up to T7500 (2.2 GHz) Second level -
Blackford:Blackford: AA Dualdual Processorprocessor Chipsetchipset Forfor Serversservers Andand Workstationsworkstations
Blackford:Blackford: AA DualDual ProcessorProcessor ChipsetChipset forfor ServersServers andand WorkstationsWorkstations Kai Cheng, Sundaram Chinthamani, Sivakumar Radhakrishnan, Fayé Briggs and Kathy Debnath IntelIntel CorporationCorporation 8/22/20068/22/2006 © Copyright 2006, Intel Corporation. All rights reserved. Hot Chips 2006 *Third party marks and brands are the property of their respective owners. Digital Enterprise Group 1 LegalLegal DisclaimeDisclaimerr • Intel, the Intel logo, Centrino, the Centrino logo, Intel Core, Core Inside, Pentium, Pentium Inside, Itanium, Itanium Inside, Xeon, Xeon Inside, Pentium III Xeon, Celeron, Celeron Inside, and Intel SpeedStep are trademarks or registered trademark of Intel Corporation or its subsidiaries in the United States and other countries. • This document is provided “as is” with no warranties whatsoever, including any warranty of merchantability, non-infringement fitness for any particular purpose, or any warranty otherwise arising out of any proposal, specification or sample • Information in this document is provided in connection with Intel products. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. • Intel does not control or audit the design or implementation of 3rd party benchmarks or websites referenced in this document. -
Memory Controller Design and Optimizations for High-Performance Systems
MEMORY CONTROLLER DESIGN AND OPTIMIZATIONS FOR HIGH-PERFORMANCE SYSTEMS Project Report By Yanwei Song, Raj Parihar In Partial Fulfillment of the Course CSC458 – Parallel and Distributed Systems April 2009 University of Rochester Rochester, New York TABLE OF CONTENT ABSTRACT........................................................................................................................ 3 1. INTRODUCTION ...................................................................................................... 4 2. OVERVIEW: DRAM BASCIS .................................................................................. 5 3. DRAM MEMORY CONTROLLER .......................................................................... 7 4. PARALLELISM IN MEMORY SYSTEM.............................................................. 10 5. SURVEY: TECHNIQUES/ IMPLEMENTATIONS ............................................... 11 6. SIMULATIONS AND ANALYSIS......................................................................... 13 7. FUTURE WORK...................................................................................................... 17 8. CONCLUSION......................................................................................................... 18 REFERENCES ................................................................................................................. 19 2 ABSTRACT “Memory wall” continues to grow despite the technological advancement and gap between memory sub-system and processor’s clock speed is still increasing. On-chip -
"Low-Power Support Using Texas Instruments SN74SSTV16857 and SN74SSTV16859"
Application Report SCEA020 - February 2001 Low-Power Support Using Texas Instruments SN74SSTV16857 and SN74SSTV16859 DDR-DIMM Registers Stephen M. Nolan Standard Linear & Logic ABSTRACT The Texas Instruments SN74SSTV16857 and SN74SSTV16859 registers support the low-power mode of the DDR-DIMM. This application report explains the low-power mode and the features of the registers that support the low-power mode. Also, the considerations that the system designer must be aware of when implementing the low-power state of a registered memory module are explained. The sequence that must be followed to utilize the register properly is detailed, including the interpretation of the associated register timing specifications. Finally, the different static- and dynamic-current specifications are analyzed, along with examples of how to calculate the dynamic operating current requirement of the registers. Contents Introduction . 2 Background and Features of Registers. 5 Sequence of Entering and Exiting the Low-Power State. 6 Considerations of Register. 6 How tinact and tact Are Characterized. 9 Dynamic- and Static-Current Specifications. 9 ICC Static Standby Current. 9 ICC Static Operating Current. 10 ICCD Dynamic Operating Current – Clock Only. 10 ICCD Dynamic Operating Current – Each Data Input. 11 Calculating Power Consumption in the Application. 11 Summary . 12 Glossary . 12 List of Figures 1 SN74SSTV16857 . 3 2 SN74SSTV16859 . 4 3 Parameter Measurement Information (VDD = 2.5 V ± 0.2 V). 9 1 SCEA020 Introduction The widespread demand for more main-memory capacity and bandwidth in computer systems has lead to the development of the JEDEC standard for DDR-SDRAM-based, 184-pin, registered memory modules. These DDR DIMMs provide twice the data-bus bandwidth of previous-generation single-data-rate (SDR) memory systems.