Superconductivity and Strong Correlations in Moiré Flat Bands
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Allan Hugh Macdonald Date and Place of Birth
10/31/2014 CURRICULUM VITAE ALLAN H. MACDONALD Full name: Allan Hugh MacDonald Date and place of birth: December 1, 1951 Antigonish, Nova Scotia, Canada Citizenships: Canadian and American Present address: 2519 Harris Boulevard Austin, Texas 78703 USA Phone (512) 495-9192 Institutional affiliation: The University of Texas at Austin Austin, Texas 78712 Phone (512) 232-9113 FAX (512) 471-9621 e-mail: [email protected] Title: Sid W. Richardson Foundation Regents Chair Field of Specialization: Condensed Matter Theory Employment: September 1973 -- April 1978 Ph.D. Student University of Toronto May 1978 -- October 1980 Research Associate --- National Research Council November 1980 -- June 1982 Assistant Research Officer -- National Research Council of Canada August 1982 -- August 1987 Associate Research Officer --- National Research Council of Canada September 1987 -- August 1992 Professor of Physics --- Indiana University September 1992 -- August 2000 Distinguished Professor of Physics --- Indiana University September 2000 -- present Sid W. Richardson Foundation Regents Chair --- The University of Texas at Austin 1 10/31/2014 Scholarships and Honors: President's Scholarship, St. Francis Xavier University, 1969–1973 Governor-General's Medal, St. Francis Xavier University, 1973 (Highest academic standing in graduating class) NSERC 1967 Science Scholarship, University of Toronto, 1973–1977 Herzberg Medal, 1987 (Awarded by the Canadian Association of Physicists) Fellow of the American Physical Society, 1989 Sid W. Richardson Foundation Regents -
Moiré Band Topology in Twisted Bilayer Graphene
Moiré Band Topology in Twisted Bilayer Graphene Chao Ma, † Qiyue Wang, ‡ Scott Mills,§ Xiaolong Chen, †# Bingchen Deng, † Shaofan Yuan, † Cheng Li, † Kenji Watanabe, || Takashi Taniguchi, || Du Xu, *§ Fan Zhang, *‡ and Fengnian Xia*† †Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA ‡Department of Physics, The University of Texas at Dallas, Richardson, TX 7508, USA §Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY11794, USA ||National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 1 ABSTRACT Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moiré Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in K- theory. The moiré band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two Z2 invariants characterize the topology of the moiré Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering. -
Exploring the Electrical Properties of Twisted Bilayer Graphene
Linfield University DigitalCommons@Linfield Senior Theses Student Scholarship & Creative Works 5-2019 Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon Linfield College Follow this and additional works at: https://digitalcommons.linfield.edu/physstud_theses Part of the Condensed Matter Physics Commons, Energy Systems Commons, Engineering Physics Commons, Materials Science and Engineering Commons, and the Power and Energy Commons Recommended Citation Shannon, William, "Exploring the Electrical Properties of Twisted Bilayer Graphene" (2019). Senior Theses. 45. https://digitalcommons.linfield.edu/physstud_theses/45 This Thesis (Open Access) is protected by copyright and/or related rights. It is brought to you for free via open access, courtesy of DigitalCommons@Linfield, with permission from the rights-holder(s). Your use of this Thesis (Open Access) must comply with the Terms of Use for material posted in DigitalCommons@Linfield, or with other stated terms (such as a Creative Commons license) indicated in the record and/or on the work itself. For more information, or if you have questions about permitted uses, please contact [email protected]. Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon A THESIS Presented to the Department of Physics LINFIELD COLLEGE McMinnville, Oregon In partial fulfillment of the requirements for the Degree of BACHELOR OF SCIENCE May, 2019 THESIS COPYRIGHT PERMISSIONS Pleaseread this document carefully before signing. If you have questions about any of these permissions,please contact the DigitalCommonsCoordinator. Title of the Thesis: Exploring the Electrical Properties of Twisted Bilayer Graphene Author's Name: (Last name, first name) Shannon, William111 Advisor's Name DigitalCommons@Linfield(DC@L) is our web-based, open access-compliantinstitutional repository for digital content produced by Linfield faculty, students, staff, and their collaborators. -
Critical Point for Bose–Einstein Condensation of Excitons in Graphite
Critical point for Bose–Einstein condensation of excitons in graphite Jinhua Wanga,b , Pan Niea,b , Xiaokang Lia,b, Huakun Zuoa,b, Benoˆıt Fauque´ c, Zengwei Zhua,b,1 , and Kamran Behniad aWuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China; bSchool of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; cJeunes Equipes´ de l’Institut de Physique, Unite´ Mixte de Service et de Recherche 3573, CNRS, College` de France, Paris Sciences et Lettres Research University, 75231 Paris Cedex 05, France; and dLaboratoire de Physique et d’Etude´ des Materiaux,´ CNRS, Ecole´ Superieure´ de Physique et de Chimie Industrielles Paris, Paris Sciences et Lettres Research University, 75005 Paris, France Edited by Zachary Fisk, University of California, Irvine, CA, and approved October 15, 2020 (received for review June 22, 2020) An exciton is an electron–hole pair bound by attractive Coulomb nature of EI unexpected in the alternative Peierls-driven charge interaction. Short-lived excitons have been detected by a vari- density wave (CDW) (9). Other indirect signatures of BEC ety of experimental probes in numerous contexts. An excitonic transition have been reported in two-dimensional systems, such insulator, a collective state of such excitons, has been more elu- as quantum wells (11), graphene (12–14), and transition metal sive. Here, thanks to Nernst measurements in pulsed magnetic dichalcogenides heterostructures (15, 16). fields, we show that in graphite there is a critical temperature Here, we present the case of graphite subject to strong mag- (T = 9.2 K) and a critical magnetic field (B = 47 T) for Bose–Einstein netic field where the existence of a thermodynamic phase transi- condensation of excitons. -
The Nature Index Journals
The Nature Index journals The current 12-month window on natureindex.com includes data from 57,681 primary research articles from the following science journals: Advanced Materials (1028 articles) American Journal of Human Genetics (173 articles) Analytical Chemistry (1633 articles) Angewandte Chemie International Edition (2709 articles) Applied Physics Letters (3609 articles) Astronomy & Astrophysics (1780 articles) Cancer Cell (109 articles) Cell (380 articles) Cell Host & Microbe (95 articles) Cell Metabolism (137 articles) Cell Stem Cell (100 articles) Chemical Communications (4389 articles) Chemical Science (995 articles) Current Biology (440 articles) Developmental Cell (204 articles) Earth and Planetary Science Letters (608 articles) Ecology (259 articles) Ecology Letters (120 articles) European Physical Journal C (588 articles) Genes & Development (193 articles) Genome Research (184 articles) Geology (270 articles) Immunity (159 articles) Inorganic Chemistry (1345 articles) Journal of Biological Chemistry (2639 articles) Journal of Cell Biology (229 articles) Journal of Clinical Investigation (298 articles) Journal of Geophysical Research: Atmospheres (829 articles) Journal of Geophysical Research: Oceans (493 articles) Journal of Geophysical Research: Solid Earth (520 articles) Journal of High Energy Physics (2142 articles) Journal of Neuroscience (1337 articles) Journal of the American Chemical Society (2384 articles) Molecular Cell (302 articles) Monthly Notices of the Royal Astronomical Society (2946 articles) Nano Letters -
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Seunghyun Lee§, Kyunghoon Lee§, Zhaohui Zhong * Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109, USA § These authors contributed equally to this work. *Corresponding author. Electronic mail: [email protected] ABSTRACT The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to µm2 size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch × 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices. 1 KEYWORDS Graphene, bilayer, chemical vapor deposition, wafer scale, bandgap opening Single and few-layer graphene1-5 are promising materials for post-silicon electronics because of their potential of integrating bottom-up nanomaterial synthesis with top-down lithographic fabrication at wafer scale.4,6 However, single layer graphene is intrinsically semimetal; introducing energy bandgap requires patterning nanometer-width graphene ribbons7-9 or utilizing special substrates.10-12 Bilayer graphene, instead, has an electric field induced bandgap up to 250 meV,13-18 thus eliminating the need for extreme scaling or costly substrates. -
Self-Peeling of Impacting Droplets
LETTERS PUBLISHED ONLINE: 11 SEPTEMBER 2017 | DOI: 10.1038/NPHYS4252 Self-peeling of impacting droplets Jolet de Ruiter†, Dan Soto† and Kripa K. Varanasi* Whether an impacting droplet1 sticks or not to a solid formation, 10 µs, is much faster than the typical time for the droplet surface has been conventionally controlled by functionalizing to completely crash22, 2R=v ∼1ms. These observations suggest that the target surface2–8 or by using additives in the drop9,10. the number of ridges is set by a local competition between heat Here we report on an unexpected self-peeling phenomenon extraction—leading to solidification—and fluid motion—opposing that can happen even on smooth untreated surfaces by it through local shear, mixing, and convection (see first stage of taking advantage of the solidification of the impacting drop sketch in Fig. 2c). We propose that at short timescales (<1 ms, and the thermal properties of the substrate. We control top row sketch of Fig. 2c), while the contact line of molten tin this phenomenon by tuning the coupling of the short- spreads outwards, a thin liquid layer in the immediate vicinity of timescale fluid dynamics—leading to interfacial defects upon the surface cools down until it forms a solid crust. At that moment, local freezing—and the longer-timescale thermo-mechanical the contact line pins, while the liquid above keeps spreading on a stresses—leading to global deformation. We establish a regime thin air film squeezed underneath. Upon renewed touchdown of map that predicts whether a molten metal drop impacting the liquid, a small air ridge remains trapped, forming the above- onto a colder substrate11–14 will bounce, stick or self-peel. -
Gate Controlled Valley Polarizer in Bilayer Graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3
ARTICLE https://doi.org/10.1038/s41467-020-15117-y OPEN Gate controlled valley polarizer in bilayer graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3 Sign reversal of Berry curvature across two oppositely gated regions in bilayer graphene can give rise to counter-propagating 1D channels with opposite valley indices. Considering spin and sub-lattice degeneracy, there are four quantized conduction channels in each direction. Previous experimental work on gate-controlled valley polarizer achieved good contrast only in the presence of an external magnetic field. Yet, with increasing magnetic field the ungated 1234567890():,; regions of bilayer graphene will transit into the quantum Hall regime, limiting the applications of valley-polarized electrons. Here we present improved performance of a gate-controlled valley polarizer through optimized device geometry and stacking method. Electrical mea- surements show up to two orders of magnitude difference in conductance between the valley-polarized state and gapped states. The valley-polarized state displays conductance of nearly 4e2/h and produces contrast in a subsequent valley analyzer configuration. These results pave the way to further experiments on valley-polarized electrons in zero magnetic field. 1 Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore. 2 Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore, Singapore. 3Present address: -
Arxiv:2105.05857V1 [Cond-Mat.Str-El] 12 May 2021
Kekul´espiral order at all nonzero integer fillings in twisted bilayer graphene Y.H. Kwan,1 G. Wagner,1 T. Soejima,2 M.P. Zaletel,2, 3 S.H. Simon,1 S.A. Parameswaran,1 and N. Bultinck1, 4 1Rudolf Peierls Centre for Theoretical Physics, University of Oxford, Oxford OX1 3PU, United Kingdom 2Department of Physics, University of California, Berkeley, California 94720, USA 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 4Department of Physics, Ghent University, 9000 Ghent, Belgium We study magic angle graphene in the presence of both strain and particle-hole symmetry break- ing due to non-local inter-layer tunneling. We perform a self-consistent Hartree-Fock study that incorporates these effects alongside realistic interaction and substrate potentials, and explore a com- prehensive set of competing orders including those that break translational symmetry at arbitrary wavevectors. We find that at all non-zero integer fillings very small strains, comparable to those measured in scanning tunneling experiments, stabilize a fundamentally new type of time-reversal symmetric and spatially non-uniform order. This order, which we dub the `incommensurate Kekul´e spiral' (IKS) order, spontaneously breaks both the emergent valley-charge conservation and moir´e translation symmetries, but preserves a modified translation symmetry T^0 | which simultaneously shifts the spatial coordinates and rotates the U(1) angle which characterizes the spontaneous inter- valley coherence. We discuss the phenomenological and microscopic properties of this order. We argue that our findings are consistent with all experimental observations reported so far, suggesting a unified explanation of the global phase diagram in terms of the IKS order. -
Three-Component Fermions with Surface Fermi Arcs in Tungsten Carbide
LETTERS https://doi.org/10.1038/s41567-017-0021-8 Three-component fermions with surface Fermi arcs in tungsten carbide J.-Z. Ma 1,2, J.-B. He1,3, Y.-F. Xu1,2, B. Q. Lv1,2, D. Chen1,2, W.-L. Zhu1,2, S. Zhang1, L.-Y. Kong 1,2, X. Gao1,2, L.-Y. Rong2,4, Y.-B. Huang 4, P. Richard1,2,5, C.-Y. Xi6, E. S. Choi7, Y. Shao1,2, Y.-L. Wang 1,2,5, H.-J. Gao1,2,5, X. Dai1,2,5, C. Fang1, H.-M. Weng 1,5, G.-F. Chen 1,2,5*, T. Qian 1,5* and H. Ding 1,2,5* Topological Dirac and Weyl semimetals not only host quasi- bulk valence and conduction bands, which are protected by the two- particles analogous to the elementary fermionic particles in dimensional (2D) topological properties on time-reversal invariant high-energy physics, but also have a non-trivial band topol- planes in the Brillouin zone (BZ)24,26. ogy manifested by gapless surface states, which induce In addition to four- and two-fold degeneracy, it has been shown exotic surface Fermi arcs1,2. Recent advances suggest new that space-group symmetries in crystals may protect other types of types of topological semimetal, in which spatial symmetries degenerate point, near which the quasiparticle excitations are not protect gapless electronic excitations without high-energy the analogues of any elementary fermions described in the standard analogues3–11. Here, using angle-resolved photoemission model. Theory has proposed three-, six- and eight-fold degener- spectroscopy, we observe triply degenerate nodal points near ate points at high-symmetry momenta in the BZ in several specific the Fermi level of tungsten carbide with space group P 62m̄ non-symmorphic space groups3,4,10,11, where the combination of non- (no. -
Publications of Electronic Structure Group at UIUC
List of Publications and Theses Richard M. Martin January, 2013 Books Richard M. Martin, "Electronic Structure: Basic theory and practical methods," Cambridge University Press, 2004, Reprinted 2005, and 2008. Japanese translation in two volumes, 2010 and 2012. Richard M. Martin, Lucia Reining and David M. Ceperley, "Interacting Electrons," – in progress -- to be published by Cambridge University Press. Theses Directed Beaudet, Todd D., 2010, “Quantum Monte Carlo Study of Hydrogen Storage Systems” Yu, M., 2010, “Energy density method for solids, surfaces, and interfaces.” Vincent, Jordan D., 2006, “Quantum Monte Carlo calculations of the optical gaps of Ge nanoclusters” Das, Dyutiman, 2005, "Quantum Monte Carlo with a Stochastic Poisson Solver" Romero, Nichols, 2005, "Density Functional Study of Fullerene-Based Solids: Crystal Structure, Doping, and Electron-Phonon Interaction" Tsolakidis, Argyrios, 2003, "Optical response of finite and extended systems" Mattson, William David, 2003, "The complex behavior of nitrogen under pressure: ab initio simulation of the properties of structures and shock waves" Wilkens, Tim James, 2001, "Accurate treatments of Electronic Correlation: Phase Transitions in an Idealized 1D Ferroelectric and Modelling Experimental Quantum Dots" Souza, Ivo Nuno Saldanha Do Rosário E, 2000, "Theory of electronic polarization and localization in insulators with applications to solid hydrogen" Kim, Yong-Hoon , 2000, "Density-Functional Study of Molecules, Clusters, and Quantum Nanostructures: Developement of -
Machine Learning for Condensed Matter Physics
Review Article Machine Learning for Condensed Matter Physics Edwin A. Bedolla-Montiel1, Luis Carlos Padierna1 and Ram´on Casta~neda-Priego1 1 Divisi´onde Ciencias e Ingenier´ıas,Universidad de Guanajuato, Loma del Bosque 103, 37150 Le´on,Mexico E-mail: [email protected] Abstract. Condensed Matter Physics (CMP) seeks to understand the microscopic interactions of matter at the quantum and atomistic levels, and describes how these interactions result in both mesoscopic and macroscopic properties. CMP overlaps with many other important branches of science, such as Chemistry, Materials Science, Statistical Physics, and High-Performance Computing. With the advancements in modern Machine Learning (ML) technology, a keen interest in applying these algorithms to further CMP research has created a compelling new area of research at the intersection of both fields. In this review, we aim to explore the main areas within CMP, which have successfully applied ML techniques to further research, such as the description and use of ML schemes for potential energy surfaces, the characterization of topological phases of matter in lattice systems, the prediction of phase transitions in off-lattice and atomistic simulations, the interpretation of ML theories with physics- inspired frameworks and the enhancement of simulation methods with ML algorithms. We also discuss in detial the main challenges and drawbacks of using ML methods on CMP problems, as well as some perspectives for future developments. Keywords: machine learning, condensed matter physics Submitted