Topological Carbon Materials: a New Perspective
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Allan Hugh Macdonald Date and Place of Birth
10/31/2014 CURRICULUM VITAE ALLAN H. MACDONALD Full name: Allan Hugh MacDonald Date and place of birth: December 1, 1951 Antigonish, Nova Scotia, Canada Citizenships: Canadian and American Present address: 2519 Harris Boulevard Austin, Texas 78703 USA Phone (512) 495-9192 Institutional affiliation: The University of Texas at Austin Austin, Texas 78712 Phone (512) 232-9113 FAX (512) 471-9621 e-mail: [email protected] Title: Sid W. Richardson Foundation Regents Chair Field of Specialization: Condensed Matter Theory Employment: September 1973 -- April 1978 Ph.D. Student University of Toronto May 1978 -- October 1980 Research Associate --- National Research Council November 1980 -- June 1982 Assistant Research Officer -- National Research Council of Canada August 1982 -- August 1987 Associate Research Officer --- National Research Council of Canada September 1987 -- August 1992 Professor of Physics --- Indiana University September 1992 -- August 2000 Distinguished Professor of Physics --- Indiana University September 2000 -- present Sid W. Richardson Foundation Regents Chair --- The University of Texas at Austin 1 10/31/2014 Scholarships and Honors: President's Scholarship, St. Francis Xavier University, 1969–1973 Governor-General's Medal, St. Francis Xavier University, 1973 (Highest academic standing in graduating class) NSERC 1967 Science Scholarship, University of Toronto, 1973–1977 Herzberg Medal, 1987 (Awarded by the Canadian Association of Physicists) Fellow of the American Physical Society, 1989 Sid W. Richardson Foundation Regents -
Moiré Band Topology in Twisted Bilayer Graphene
Moiré Band Topology in Twisted Bilayer Graphene Chao Ma, † Qiyue Wang, ‡ Scott Mills,§ Xiaolong Chen, †# Bingchen Deng, † Shaofan Yuan, † Cheng Li, † Kenji Watanabe, || Takashi Taniguchi, || Du Xu, *§ Fan Zhang, *‡ and Fengnian Xia*† †Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA ‡Department of Physics, The University of Texas at Dallas, Richardson, TX 7508, USA §Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY11794, USA ||National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 1 ABSTRACT Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moiré Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in K- theory. The moiré band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two Z2 invariants characterize the topology of the moiré Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering. -
Exploring the Electrical Properties of Twisted Bilayer Graphene
Linfield University DigitalCommons@Linfield Senior Theses Student Scholarship & Creative Works 5-2019 Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon Linfield College Follow this and additional works at: https://digitalcommons.linfield.edu/physstud_theses Part of the Condensed Matter Physics Commons, Energy Systems Commons, Engineering Physics Commons, Materials Science and Engineering Commons, and the Power and Energy Commons Recommended Citation Shannon, William, "Exploring the Electrical Properties of Twisted Bilayer Graphene" (2019). Senior Theses. 45. https://digitalcommons.linfield.edu/physstud_theses/45 This Thesis (Open Access) is protected by copyright and/or related rights. It is brought to you for free via open access, courtesy of DigitalCommons@Linfield, with permission from the rights-holder(s). Your use of this Thesis (Open Access) must comply with the Terms of Use for material posted in DigitalCommons@Linfield, or with other stated terms (such as a Creative Commons license) indicated in the record and/or on the work itself. For more information, or if you have questions about permitted uses, please contact [email protected]. Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon A THESIS Presented to the Department of Physics LINFIELD COLLEGE McMinnville, Oregon In partial fulfillment of the requirements for the Degree of BACHELOR OF SCIENCE May, 2019 THESIS COPYRIGHT PERMISSIONS Pleaseread this document carefully before signing. If you have questions about any of these permissions,please contact the DigitalCommonsCoordinator. Title of the Thesis: Exploring the Electrical Properties of Twisted Bilayer Graphene Author's Name: (Last name, first name) Shannon, William111 Advisor's Name DigitalCommons@Linfield(DC@L) is our web-based, open access-compliantinstitutional repository for digital content produced by Linfield faculty, students, staff, and their collaborators. -
Critical Point for Bose–Einstein Condensation of Excitons in Graphite
Critical point for Bose–Einstein condensation of excitons in graphite Jinhua Wanga,b , Pan Niea,b , Xiaokang Lia,b, Huakun Zuoa,b, Benoˆıt Fauque´ c, Zengwei Zhua,b,1 , and Kamran Behniad aWuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China; bSchool of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; cJeunes Equipes´ de l’Institut de Physique, Unite´ Mixte de Service et de Recherche 3573, CNRS, College` de France, Paris Sciences et Lettres Research University, 75231 Paris Cedex 05, France; and dLaboratoire de Physique et d’Etude´ des Materiaux,´ CNRS, Ecole´ Superieure´ de Physique et de Chimie Industrielles Paris, Paris Sciences et Lettres Research University, 75005 Paris, France Edited by Zachary Fisk, University of California, Irvine, CA, and approved October 15, 2020 (received for review June 22, 2020) An exciton is an electron–hole pair bound by attractive Coulomb nature of EI unexpected in the alternative Peierls-driven charge interaction. Short-lived excitons have been detected by a vari- density wave (CDW) (9). Other indirect signatures of BEC ety of experimental probes in numerous contexts. An excitonic transition have been reported in two-dimensional systems, such insulator, a collective state of such excitons, has been more elu- as quantum wells (11), graphene (12–14), and transition metal sive. Here, thanks to Nernst measurements in pulsed magnetic dichalcogenides heterostructures (15, 16). fields, we show that in graphite there is a critical temperature Here, we present the case of graphite subject to strong mag- (T = 9.2 K) and a critical magnetic field (B = 47 T) for Bose–Einstein netic field where the existence of a thermodynamic phase transi- condensation of excitons. -
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Seunghyun Lee§, Kyunghoon Lee§, Zhaohui Zhong * Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109, USA § These authors contributed equally to this work. *Corresponding author. Electronic mail: [email protected] ABSTRACT The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to µm2 size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch × 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices. 1 KEYWORDS Graphene, bilayer, chemical vapor deposition, wafer scale, bandgap opening Single and few-layer graphene1-5 are promising materials for post-silicon electronics because of their potential of integrating bottom-up nanomaterial synthesis with top-down lithographic fabrication at wafer scale.4,6 However, single layer graphene is intrinsically semimetal; introducing energy bandgap requires patterning nanometer-width graphene ribbons7-9 or utilizing special substrates.10-12 Bilayer graphene, instead, has an electric field induced bandgap up to 250 meV,13-18 thus eliminating the need for extreme scaling or costly substrates. -
Simulations of Graphene Nanoribbon Field Effect Transistor for The
nanomaterials Article Simulations of Graphene Nanoribbon Field Effect Transistor for the Detection of Propane and Butane Gases: A First Principles Study Muhammad Haroon Rashid * , Ants Koel and Toomas Rang Thomas Johan Seebeck Department of Electronics, Tallinn University of Technology, Ehitajate tee 5, 12616 Tallinn, Estonia; [email protected] (A.K.); [email protected] (T.R.) * Correspondence: [email protected]; Tel.: +372-5391-2599 Received: 7 December 2019; Accepted: 30 December 2019; Published: 3 January 2020 Abstract: During the last few years graphene has emerged as a potential candidate for electronics and optoelectronics applications due to its several salient features. Graphene is a smart material that responds to any physical change in its surrounding environment. Graphene has a very low intrinsic electronic noise and it can detect even a single gas molecule in its proximity. This property of graphene makes is a suitable and promising candidate to detect a large variety of organic/inorganic chemicals and gases. Typical solid state gas sensors usually requires high operating temperature and they cannot detect very low concentrations of gases efficiently due to intrinsic noise caused by thermal motion of charge carriers at high temperatures. They also have low resolution and stability issues of their constituent materials (such as electrolytes, electrodes, and sensing material itself) in harsh environments. It accelerates the need of development of robust, highly sensitive and efficient gas sensor with low operating temperature. Graphene and its derivatives could be a prospective replacement of these solid-state sensors due to their better electronic attributes for moderate temperature applications. The presence of extremely low intrinsic noise in graphene makes it highly suitable to detect a very low concentration of organic/inorganic compounds (even a single molecule ca be detected with graphene). -
Gate Controlled Valley Polarizer in Bilayer Graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3
ARTICLE https://doi.org/10.1038/s41467-020-15117-y OPEN Gate controlled valley polarizer in bilayer graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3 Sign reversal of Berry curvature across two oppositely gated regions in bilayer graphene can give rise to counter-propagating 1D channels with opposite valley indices. Considering spin and sub-lattice degeneracy, there are four quantized conduction channels in each direction. Previous experimental work on gate-controlled valley polarizer achieved good contrast only in the presence of an external magnetic field. Yet, with increasing magnetic field the ungated 1234567890():,; regions of bilayer graphene will transit into the quantum Hall regime, limiting the applications of valley-polarized electrons. Here we present improved performance of a gate-controlled valley polarizer through optimized device geometry and stacking method. Electrical mea- surements show up to two orders of magnitude difference in conductance between the valley-polarized state and gapped states. The valley-polarized state displays conductance of nearly 4e2/h and produces contrast in a subsequent valley analyzer configuration. These results pave the way to further experiments on valley-polarized electrons in zero magnetic field. 1 Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore. 2 Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore, Singapore. 3Present address: -
Arxiv:2105.05857V1 [Cond-Mat.Str-El] 12 May 2021
Kekul´espiral order at all nonzero integer fillings in twisted bilayer graphene Y.H. Kwan,1 G. Wagner,1 T. Soejima,2 M.P. Zaletel,2, 3 S.H. Simon,1 S.A. Parameswaran,1 and N. Bultinck1, 4 1Rudolf Peierls Centre for Theoretical Physics, University of Oxford, Oxford OX1 3PU, United Kingdom 2Department of Physics, University of California, Berkeley, California 94720, USA 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 4Department of Physics, Ghent University, 9000 Ghent, Belgium We study magic angle graphene in the presence of both strain and particle-hole symmetry break- ing due to non-local inter-layer tunneling. We perform a self-consistent Hartree-Fock study that incorporates these effects alongside realistic interaction and substrate potentials, and explore a com- prehensive set of competing orders including those that break translational symmetry at arbitrary wavevectors. We find that at all non-zero integer fillings very small strains, comparable to those measured in scanning tunneling experiments, stabilize a fundamentally new type of time-reversal symmetric and spatially non-uniform order. This order, which we dub the `incommensurate Kekul´e spiral' (IKS) order, spontaneously breaks both the emergent valley-charge conservation and moir´e translation symmetries, but preserves a modified translation symmetry T^0 | which simultaneously shifts the spatial coordinates and rotates the U(1) angle which characterizes the spontaneous inter- valley coherence. We discuss the phenomenological and microscopic properties of this order. We argue that our findings are consistent with all experimental observations reported so far, suggesting a unified explanation of the global phase diagram in terms of the IKS order. -
Transport of Fullerene Molecules Along Graphene Nanoribbons SUBJECT AREAS: Alexander V
Transport of fullerene molecules along graphene nanoribbons SUBJECT AREAS: Alexander V. Savin1,2 & Yuri S. Kivshar2 SURFACES, INTERFACES AND THIN FILMS MECHANICAL AND STRUCTURAL 1Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow 119991, Russia, 2Nonlinear Physics Center, PROPERTIES AND DEVICES Research School of Physics and Engineering, Australian National University, Canberra ACT 0200, Australia. MOLECULAR MACHINES AND MOTORS We study the motion of C60 fullerene molecules and short-length carbon nanotubes on graphene CARBON NANOTUBES AND nanoribbons. We reveal that the character of the motion of C60 depends on temperature: for T , 150 K the FULLERENES main type of motion is sliding along the surface, but for higher temperatures the sliding is replaced by rocking and rolling. Modeling of the buckyball with an included metal ion demonstrates that this molecular complex undergoes a rolling motion along the nanoribbon with the constant velocity under the action of a Received constant electric field. The similar effect is observed in the presence of the heat gradient applied to the 27 June 2012 nanoribbon, but mobility of carbon structures in this case depends largely on their size and symmetry, such that larger and more asymmetric structures demonstrate much lower mobility. Our results suggest that both Accepted electorphoresis and thermophoresis can be employed to control the motion of carbon molecules and 29 October 2012 fullerenes. Published 20 December 2012 ver the past 20 years nanotechnology has made an impressive impact on the development of many fields of physics, chemistry, medicine, and nanoscale engineering1. After the discovery of graphene as a novel material for nanotechnology2, many properties of this two-dimensional object have been studied both O 3,4 Correspondence and theoretically and experimentally . -
Probing DNA Translocations with Inplane Current Signals in a Graphene Nanoribbon with a Nanopore Stephanie J
This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License, which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes. Article Cite This: ACS Nano 2018, 12, 2623−2633 www.acsnano.org Probing DNA Translocations with Inplane Current Signals in a Graphene Nanoribbon with a Nanopore Stephanie J. Heerema, Leonardo Vicarelli, Sergii Pud, Raymond N. Schouten, Henny W. Zandbergen, and Cees Dekker* Kavli Institute of Nanoscience Delft, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands *S Supporting Information ABSTRACT: Many theoretical studies predict that DNA sequencing should be feasible by monitoring the transverse current through a graphene nanoribbon while a DNA molecule translocates through a nanopore in that ribbon. Such a readout would benefit from the special transport properties of graphene, provide ultimate spatial resolution because of the single-atom layer thickness of graphene, and facilitate high-bandwidth measurements. Previous experimental attempts to measure such transverse inplane signals were however dominated by a trivial capacitive response. Here, we explore the feasibility of the approach using a custom-made differential current amplifier that discriminates between the capacitive current signal and the resistive response in the graphene. We fabricate well-defined short and narrow (30 nm × 30 nm) nanoribbons with a 5 nm nanopore in graphene with a high-temperature scanning transmission electron microscope to retain the crystallinity and sensitivity of the graphene. We show that, indeed, resistive modulations can be observed in the graphene current due to DNA translocation through the nanopore, thus demonstrating that DNA sensing with inplane currents in graphene nanostructures is possible. -
Electronic and Thermoelectric Properties of Graphene/Boron Nitride In-Plane Heterostructures Van Truong Tran
Electronic and thermoelectric properties of graphene/boron nitride in-plane heterostructures van Truong Tran To cite this version: van Truong Tran. Electronic and thermoelectric properties of graphene/boron nitride in-plane het- erostructures. Materials Science [cond-mat.mtrl-sci]. Université Paris Saclay (COmUE), 2015. En- glish. NNT : 2015SACLS133. tel-01374739 HAL Id: tel-01374739 https://tel.archives-ouvertes.fr/tel-01374739 Submitted on 1 Oct 2016 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. NNT : 2015SACLS133 THESE DE DOCTORAT DE L’UNIVERSITE PARIS-SACLAY, préparée à l’Université Paris-Sud ÉCOLE DOCTORALE N° 575 Electrical, Optical, Bio – physics and Engineering (EOBE) IEF - Institut d'Electronique Fondamentale Spécialité de doctorat : Electronique et Optoélectronique, Nano et Microtechnologies Par Van-Truong Tran Propriétés électroniques et thermoélectriques des hétérostructures planaires de graphène et de nitrure de bore Thèse présentée et soutenue à Orsay, le 26 Novembre 2015 : Composition du Jury : M. VOLZ Sebastian EM2C, CNRS Président M. GOUPIL Christophe LIED, Université Paris Diderot Rapporteur M. PALA Marco IMEP-LAHC, CNRS Rapporteur M. SAINT-MARTIN Jérôme IEF, Université Paris-Sud Examinateur M. DOLLFUS Philippe IEF, CNRS Directeur de thèse Contents Contents ................................................................................................................................................... -
Arxiv:1105.0977V1 [Cond-Mat.Mtrl-Sci] 5 May 2011 Mn.Ti Omi Hsdbe Stetcro.The Stable Kinetically T-Carbon
T-Carbon: A Novel Carbon Allotrope Xian-Lei Sheng1, Qing-Bo Yan2, Fei Ye2, Qing-Rong Zheng1, and Gang Su1∗ 1College of Physical Sciences, Graduate University of Chinese Academy of Sciences, P. O. Box 4588, Beijing 100049, China 2College of Materials Science and Opto-Electronic Technology, Graduate University of Chinese Academy of Sciences, P. O. Box 4588, Beijing 100049, China A structurally stable crystalline carbon allotrope is predicted by means of the first principles calculations. This allotrope can be derived by substituting each atom in diamond with a carbon tetrahedron, and possesses the same space group Fd3¯m as diamond, which is thus coined as T- carbon. The calculations on geometrical, vibrational and electronic properties reveal that T-carbon, with a considerable structural stability and a much lower density 1.50 g/cm3, is a semiconductor with a direct band gap about 3.0 eV, and has a Vickers hardness 61.1 GPa lower than diamond but comparable with cubic boron nitride. Such a form of carbon, once obtained, would have wide applications in photocatalysis, adsoption, hydrogen storage and aerospace materials. PACS numbers: 64.60.My, 64.70.K-, 71.15.Mb, 71.20.Mq Carbon is the element that plays a fundamental role for and with a much lower density 1.50 g/cm3, has a Vick- life on Earth. As it can form sp3-, sp2- and sp-hybridized ers hardness 61.1 GPa smaller than diamond (93.7 GPa) chemical bonds, carbon has strong ability to bind itself but comparable with the cubic boron nitride. Electronic with other elements to generate countless organic com- structures reveal that it is a semiconductor with a direct pounds with chemical and biological diversity, resulting band gap around 3.0 eV.