Landau Quantization of Dirac Fermions in Graphene and Its Multilayers
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Allan Hugh Macdonald Date and Place of Birth
10/31/2014 CURRICULUM VITAE ALLAN H. MACDONALD Full name: Allan Hugh MacDonald Date and place of birth: December 1, 1951 Antigonish, Nova Scotia, Canada Citizenships: Canadian and American Present address: 2519 Harris Boulevard Austin, Texas 78703 USA Phone (512) 495-9192 Institutional affiliation: The University of Texas at Austin Austin, Texas 78712 Phone (512) 232-9113 FAX (512) 471-9621 e-mail: [email protected] Title: Sid W. Richardson Foundation Regents Chair Field of Specialization: Condensed Matter Theory Employment: September 1973 -- April 1978 Ph.D. Student University of Toronto May 1978 -- October 1980 Research Associate --- National Research Council November 1980 -- June 1982 Assistant Research Officer -- National Research Council of Canada August 1982 -- August 1987 Associate Research Officer --- National Research Council of Canada September 1987 -- August 1992 Professor of Physics --- Indiana University September 1992 -- August 2000 Distinguished Professor of Physics --- Indiana University September 2000 -- present Sid W. Richardson Foundation Regents Chair --- The University of Texas at Austin 1 10/31/2014 Scholarships and Honors: President's Scholarship, St. Francis Xavier University, 1969–1973 Governor-General's Medal, St. Francis Xavier University, 1973 (Highest academic standing in graduating class) NSERC 1967 Science Scholarship, University of Toronto, 1973–1977 Herzberg Medal, 1987 (Awarded by the Canadian Association of Physicists) Fellow of the American Physical Society, 1989 Sid W. Richardson Foundation Regents -
Magnetism, Free Electrons and Interactions
Magnetism Magnets Zero external field Finite external field • Types of magnetic systems • Pauli paramagnetism in metals Paramagnets • Landau diamagnetism in metals • Larmor diamagnetism in insulators Diamagnets • Ferromagnetism of electron gas • Spin Hamiltonian Ferromagnets • Mean field approach • Curie transition Antiferromagnets Ferrimagnets …… … Pauli paramagnetism Pauli paramagnetism Let us first look at magnetic properties of a free electron gas. ε =−p2 /2meBmc= /2 ε =+p2 /2meBmc= /2 ↑ ↓G Electron are spin-1/2 particles #of majority spins: dp3 NV= f()ε In external magnetic field B – Zeeman splitting #of minority spins: ↑,,↓ ∫ (2π= )3 ↑ ↓ 2 = 2 = ε↑ =−p /2meBmc /2 ε↓ =+p /2meBmc /2 Magnetization (magnetic moment per unit volume): - minority spins e= M =−()NN : aligned along the field and proportional Fermi level ↑ ↓ 2Vmc to B in low fields χ - magnetic succeptibility - majority spins M = χB χ > 0 - paramagnetism Pauli succeptibility Landau quantization G 2 2 A free electron in magnetic field: B & zˆ ε↑ =−p /2meBmc= /2 ε↓ =+p /2meBmc= /2 G 2 µ+eB= /2 mc 2 G VgeB= Schrödinger equation: = ⎛⎞ieA ABxAA===;0 NN−= gd()εε ≈ V −∇+=⎜⎟ψ εψ yxz ↑↓ ∫ 2mc= 22µ−eB= /2 mc mc ⎝⎠ B=1T corresponds toeBmc= /1=× K k provided m is free electrons’s mass Solutions: labeled by two indices nk, B G z For any fields, eBmc=/ µ ψ nk(r )= exp( ik y y+− ik z z )ϕ n ( x= ck y / eB ) Magnetic succeptibility: ϕn - wave functions of a harmonic oscillator 22 2 Energies: ε =+==kmeBmcn/2 ( / )( + 1/2) - strongly degenerate!! ⎛⎞e= nk z χP = ⎜⎟g ⎝⎠2mc We “quantized” momenta transverse to the field (Landau levels) 1 Landau diamagnetism Electrons in metals A free electron in magnetic field: moves along spiral trajectories We know that there are diamagnetic metals. -
Moiré Band Topology in Twisted Bilayer Graphene
Moiré Band Topology in Twisted Bilayer Graphene Chao Ma, † Qiyue Wang, ‡ Scott Mills,§ Xiaolong Chen, †# Bingchen Deng, † Shaofan Yuan, † Cheng Li, † Kenji Watanabe, || Takashi Taniguchi, || Du Xu, *§ Fan Zhang, *‡ and Fengnian Xia*† †Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA ‡Department of Physics, The University of Texas at Dallas, Richardson, TX 7508, USA §Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY11794, USA ||National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 1 ABSTRACT Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emergent ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moiré Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in K- theory. The moiré band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two Z2 invariants characterize the topology of the moiré Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering. -
Exploring the Electrical Properties of Twisted Bilayer Graphene
Linfield University DigitalCommons@Linfield Senior Theses Student Scholarship & Creative Works 5-2019 Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon Linfield College Follow this and additional works at: https://digitalcommons.linfield.edu/physstud_theses Part of the Condensed Matter Physics Commons, Energy Systems Commons, Engineering Physics Commons, Materials Science and Engineering Commons, and the Power and Energy Commons Recommended Citation Shannon, William, "Exploring the Electrical Properties of Twisted Bilayer Graphene" (2019). Senior Theses. 45. https://digitalcommons.linfield.edu/physstud_theses/45 This Thesis (Open Access) is protected by copyright and/or related rights. It is brought to you for free via open access, courtesy of DigitalCommons@Linfield, with permission from the rights-holder(s). Your use of this Thesis (Open Access) must comply with the Terms of Use for material posted in DigitalCommons@Linfield, or with other stated terms (such as a Creative Commons license) indicated in the record and/or on the work itself. For more information, or if you have questions about permitted uses, please contact [email protected]. Exploring the Electrical Properties of Twisted Bilayer Graphene William Shannon A THESIS Presented to the Department of Physics LINFIELD COLLEGE McMinnville, Oregon In partial fulfillment of the requirements for the Degree of BACHELOR OF SCIENCE May, 2019 THESIS COPYRIGHT PERMISSIONS Pleaseread this document carefully before signing. If you have questions about any of these permissions,please contact the DigitalCommonsCoordinator. Title of the Thesis: Exploring the Electrical Properties of Twisted Bilayer Graphene Author's Name: (Last name, first name) Shannon, William111 Advisor's Name DigitalCommons@Linfield(DC@L) is our web-based, open access-compliantinstitutional repository for digital content produced by Linfield faculty, students, staff, and their collaborators. -
Critical Point for Bose–Einstein Condensation of Excitons in Graphite
Critical point for Bose–Einstein condensation of excitons in graphite Jinhua Wanga,b , Pan Niea,b , Xiaokang Lia,b, Huakun Zuoa,b, Benoˆıt Fauque´ c, Zengwei Zhua,b,1 , and Kamran Behniad aWuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China; bSchool of Physics, Huazhong University of Science and Technology, Wuhan 430074, China; cJeunes Equipes´ de l’Institut de Physique, Unite´ Mixte de Service et de Recherche 3573, CNRS, College` de France, Paris Sciences et Lettres Research University, 75231 Paris Cedex 05, France; and dLaboratoire de Physique et d’Etude´ des Materiaux,´ CNRS, Ecole´ Superieure´ de Physique et de Chimie Industrielles Paris, Paris Sciences et Lettres Research University, 75005 Paris, France Edited by Zachary Fisk, University of California, Irvine, CA, and approved October 15, 2020 (received for review June 22, 2020) An exciton is an electron–hole pair bound by attractive Coulomb nature of EI unexpected in the alternative Peierls-driven charge interaction. Short-lived excitons have been detected by a vari- density wave (CDW) (9). Other indirect signatures of BEC ety of experimental probes in numerous contexts. An excitonic transition have been reported in two-dimensional systems, such insulator, a collective state of such excitons, has been more elu- as quantum wells (11), graphene (12–14), and transition metal sive. Here, thanks to Nernst measurements in pulsed magnetic dichalcogenides heterostructures (15, 16). fields, we show that in graphite there is a critical temperature Here, we present the case of graphite subject to strong mag- (T = 9.2 K) and a critical magnetic field (B = 47 T) for Bose–Einstein netic field where the existence of a thermodynamic phase transi- condensation of excitons. -
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition Seunghyun Lee§, Kyunghoon Lee§, Zhaohui Zhong * Department of Electrical Engineering and Computer Science, University of Michigan Ann Arbor, MI 48109, USA § These authors contributed equally to this work. *Corresponding author. Electronic mail: [email protected] ABSTRACT The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to µm2 size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch × 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices. 1 KEYWORDS Graphene, bilayer, chemical vapor deposition, wafer scale, bandgap opening Single and few-layer graphene1-5 are promising materials for post-silicon electronics because of their potential of integrating bottom-up nanomaterial synthesis with top-down lithographic fabrication at wafer scale.4,6 However, single layer graphene is intrinsically semimetal; introducing energy bandgap requires patterning nanometer-width graphene ribbons7-9 or utilizing special substrates.10-12 Bilayer graphene, instead, has an electric field induced bandgap up to 250 meV,13-18 thus eliminating the need for extreme scaling or costly substrates. -
Rich Magnetic Quantization Phenomena in AA Bilayer Silicene
www.nature.com/scientificreports OPEN Rich Magnetic Quantization Phenomena in AA Bilayer Silicene Po-Hsin Shih1, Thi-Nga Do2,3, Godfrey Gumbs4,5, Danhong Huang6, Hai Duong Pham1 & Ming-Fa Lin1,7,8 Received: 13 June 2019 The rich magneto-electronic properties of AA-bottom-top (bt) bilayer silicene are investigated using Accepted: 27 August 2019 a generalized tight-binding model. The electronic structure exhibits two pairs of oscillatory energy Published: xx xx xxxx bands for which the lowest conduction and highest valence states of the low-lying pair are shifted away from the K point. The quantized Landau levels (LLs) are classifed into various separated groups by the localization behaviors of their spatial distributions. The LLs in the vicinity of the Fermi energy do not present simple wave function modes. This behavior is quite diferent from other two-dimensional systems. The geometry symmetry, intralayer and interlayer atomic interactions, and the efect of a perpendicular magnetic feld are responsible for the peculiar LL energy spectra in AA-bt bilayer silicene. This work provides a better understanding of the diverse magnetic quantization phenomena in 2D condensed-matter materials. Silicene, an isostructure to graphene, is purely made of silicon atoms through both the sp2 and sp3 bondings. So far, silicene systems have been successfully synthesized by the epitaxial growth on various substrate surfaces. Monolayer silicene with diferent sizes of unit cells has been produced on several substrates, such as Si(111) 1,2 3,4 5 6 33× -Ag template , Ag(111) (4 × 4) , Ir(111) ( 33× ) and ZrB2(0001) (2 × 2) . -
Topological Classification of Correlations in 2D Electron
materials Article Topological Classification of Correlations in 2D Electron Systems in Magnetic or Berry Fields Janusz E. Jacak Department of Quantum Technologies, Wrocław University of Science and Technology, Wyb. Wyspia´nskiego27, 50-370 Wrocław, Poland; [email protected] Abstract: Recent topology classification of 2D electron states induced by different homotopy classes of mappings of the planar Brillouin zone into Bloch space can be supplemented by a homotopy classification of various phases of multi-electron homotopy patterns induced by Coulomb interaction between electrons. The general classification of such type is presented. It explains the topologically protected correlations responsible for integer and fractional Hall effects in 2D multi-electron systems in the presence of perpendicular quantizing magnetic field or Berry field, the latter in topological Chern insulators. The long-range quantum entanglement is essential for homotopy correlated phases in contrast to local binary entanglement for conventional phases with local order parameters. The classification of homotopy long-range correlated phases induced by the Coulomb interaction of electrons has been derived in terms of homotopy invariants and illustrated by experimental observations in GaAs 2DES, graphene monolayer, and bilayer and in Chern topological insulators. The homotopy phases are demonstrated to be topologically protected and immune to the local crystal field, local disorder, and variation of the electron interaction strength. The nonzero interaction between electrons is shown, however, to be essential for the definition of the homotopy invariants, which disappear in gaseous systems. Citation: Jacak, J.E. Topological Keywords: homotopy phases; long-range quantum entanglement; FQHE; Hall systems; Chern Classification of Correlations in 2D topological insulators Electron Systems in Magnetic or Berry Field. -
Type-III and Tilted Dirac Cones Emerging from Flat Bands in Photonic Orbital Graphene M
Type-III and Tilted Dirac Cones Emerging from Flat Bands in Photonic Orbital Graphene M. Milićević, G. Montambaux, T. Ozawa, O. Jamadi, B. Real, I. Sagnes, A. Lemaitre, L. Le Gratiet, A. Harouri, J. Bloch, et al. To cite this version: M. Milićević, G. Montambaux, T. Ozawa, O. Jamadi, B. Real, et al.. Type-III and Tilted Dirac Cones Emerging from Flat Bands in Photonic Orbital Graphene. Physical Review X, American Physical Society, 2019, 9 (3), 10.1103/PhysRevX.9.031010. hal-02335931 HAL Id: hal-02335931 https://hal.archives-ouvertes.fr/hal-02335931 Submitted on 28 Oct 2019 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. PHYSICAL REVIEW X 9, 031010 (2019) Featured in Physics Type-III and Tilted Dirac Cones Emerging from Flat Bands in Photonic Orbital Graphene M. Milićević,1 G. Montambaux,2 T. Ozawa,3 O. Jamadi,4 B. Real,4 I. Sagnes,1 A. Lemaître,1 L. Le Gratiet,1 A. Harouri,1 J. Bloch,1 and A. Amo4 1Centre de Nanosciences et de Nanotechnologies (C2N), CNRS Universit´e Paris-Sud/Paris-Saclay, Palaiseau, France 2Laboratoire de Physique des Solides, -
Gate Controlled Valley Polarizer in Bilayer Graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3
ARTICLE https://doi.org/10.1038/s41467-020-15117-y OPEN Gate controlled valley polarizer in bilayer graphene ✉ Hao Chen1,2, Pinjia Zhou1, Jiawei Liu1,2, Jiabin Qiao1, Barbaros Oezyilmaz1,2 & Jens Martin 1,2,3 Sign reversal of Berry curvature across two oppositely gated regions in bilayer graphene can give rise to counter-propagating 1D channels with opposite valley indices. Considering spin and sub-lattice degeneracy, there are four quantized conduction channels in each direction. Previous experimental work on gate-controlled valley polarizer achieved good contrast only in the presence of an external magnetic field. Yet, with increasing magnetic field the ungated 1234567890():,; regions of bilayer graphene will transit into the quantum Hall regime, limiting the applications of valley-polarized electrons. Here we present improved performance of a gate-controlled valley polarizer through optimized device geometry and stacking method. Electrical mea- surements show up to two orders of magnitude difference in conductance between the valley-polarized state and gapped states. The valley-polarized state displays conductance of nearly 4e2/h and produces contrast in a subsequent valley analyzer configuration. These results pave the way to further experiments on valley-polarized electrons in zero magnetic field. 1 Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore. 2 Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore, Singapore. 3Present address: -
Arxiv:2105.05857V1 [Cond-Mat.Str-El] 12 May 2021
Kekul´espiral order at all nonzero integer fillings in twisted bilayer graphene Y.H. Kwan,1 G. Wagner,1 T. Soejima,2 M.P. Zaletel,2, 3 S.H. Simon,1 S.A. Parameswaran,1 and N. Bultinck1, 4 1Rudolf Peierls Centre for Theoretical Physics, University of Oxford, Oxford OX1 3PU, United Kingdom 2Department of Physics, University of California, Berkeley, California 94720, USA 3Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 4Department of Physics, Ghent University, 9000 Ghent, Belgium We study magic angle graphene in the presence of both strain and particle-hole symmetry break- ing due to non-local inter-layer tunneling. We perform a self-consistent Hartree-Fock study that incorporates these effects alongside realistic interaction and substrate potentials, and explore a com- prehensive set of competing orders including those that break translational symmetry at arbitrary wavevectors. We find that at all non-zero integer fillings very small strains, comparable to those measured in scanning tunneling experiments, stabilize a fundamentally new type of time-reversal symmetric and spatially non-uniform order. This order, which we dub the `incommensurate Kekul´e spiral' (IKS) order, spontaneously breaks both the emergent valley-charge conservation and moir´e translation symmetries, but preserves a modified translation symmetry T^0 | which simultaneously shifts the spatial coordinates and rotates the U(1) angle which characterizes the spontaneous inter- valley coherence. We discuss the phenomenological and microscopic properties of this order. We argue that our findings are consistent with all experimental observations reported so far, suggesting a unified explanation of the global phase diagram in terms of the IKS order. -
25 Years of Quantum Hall Effect
S´eminaire Poincar´e2 (2004) 1 – 16 S´eminaire Poincar´e 25 Years of Quantum Hall Effect (QHE) A Personal View on the Discovery, Physics and Applications of this Quantum Effect Klaus von Klitzing Max-Planck-Institut f¨ur Festk¨orperforschung Heisenbergstr. 1 D-70569 Stuttgart Germany 1 Historical Aspects The birthday of the quantum Hall effect (QHE) can be fixed very accurately. It was the night of the 4th to the 5th of February 1980 at around 2 a.m. during an experiment at the High Magnetic Field Laboratory in Grenoble. The research topic included the characterization of the electronic transport of silicon field effect transistors. How can one improve the mobility of these devices? Which scattering processes (surface roughness, interface charges, impurities etc.) dominate the motion of the electrons in the very thin layer of only a few nanometers at the interface between silicon and silicon dioxide? For this research, Dr. Dorda (Siemens AG) and Dr. Pepper (Plessey Company) provided specially designed devices (Hall devices) as shown in Fig.1, which allow direct measurements of the resistivity tensor. Figure 1: Typical silicon MOSFET device used for measurements of the xx- and xy-components of the resistivity tensor. For a fixed source-drain current between the contacts S and D, the potential drops between the probes P − P and H − H are directly proportional to the resistivities ρxx and ρxy. A positive gate voltage increases the carrier density below the gate. For the experiments, low temperatures (typically 4.2 K) were used in order to suppress dis- turbing scattering processes originating from electron-phonon interactions.