Purdue University Purdue e-Pubs Birck and NCN Publications Birck Nanotechnology Center 6-2014 All-Silicon Technology for High-Q Evanescent Mode Cavity Tunable Resonators and Filters Muhammad Shoaib Arif Birck Nanotechnology Center, Purdue University,
[email protected] Dimitrios Peroulis Purdue University, Birck Nanotechnology Center,
[email protected] Follow this and additional works at: http://docs.lib.purdue.edu/nanopub Part of the Nanoscience and Nanotechnology Commons Arif, Muhammad Shoaib and Peroulis, Dimitrios, "All-Silicon Technology for High-Q Evanescent Mode Cavity Tunable Resonators and Filters" (2014). Birck and NCN Publications. Paper 1638. http://dx.doi.org/10.1109/JMEMS.2013.2281119 This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact
[email protected] for additional information. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 23, NO. 3, JUNE 2014 727 All-Silicon Technology for High-Q Evanescent Mode Cavity Tunable Resonators and Filters Muhammad Shoaib Arif, Student Member, IEEE, and Dimitrios Peroulis, Member, IEEE Abstract— This paper presents a new fabrication technology relatively large size, difficulty in planar integration, high power and the associated design parameters for realizing compact consumption, need of controlled temperature environment and widely-tunable cavity filters with a high unloaded quality for proper operation, and high cost [4]. The planar or 2-D factor ( Qu) maintained throughout the analog tuning range. This all-silicon technology has been successfully employed to tunable filter technology is another extensively explored demonstrate tunable resonators in mobile form factors in the approach. In these filters, transmission lines are loaded with C, X, Ku, and K bands with simultaneous high unloaded lumped tunable elements (varactors) for frequency tuning.