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Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends
Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends October 11, 2018 Afshin S. Daryoush(1), Ajay Poddar(2), Tianchi Sun(1), and Ulrich L. Rohde(2), Drexel University(1); Synergy Microwave(2) Highly stable oscillators are key components in many important applications where coherent processing is performed for improved detection. The optoelectronic oscillator (OEO) exhibits low phase noise at microwave and mmWave frequencies, which is attractive for applications such as synthetic aperture radar, space communications, navigation and meteorology, as well as for communications carriers operating at frequencies above 10 GHz, with the advent of high data rate wireless for high speed data transmission. The conventional OEO suffers from a large number of unwanted, closely-spaced oscillation modes, large size and thermal drift. State-of-the- art performance is reported for X- and K-Band OEO synthesizers incorporating a novel forced technique of self-injection locking, double self phase-locking. This technique reduces phase noise both close-in and far-away from the carrier, while suppressing side modes observed in standard OEOs. As an example, frequency synthesizers at X-Band (8 to 12 GHz) and K-Band (16 to 24 GHz) are demonstrated, typically exhibiting phase noise at 10 kHz offset from the carrier better than −138 and −128 dBc/Hz, respectively. A fully integrated version of a forced tunable low phase noise OEO is also being developed for 5G applications, featuring reduced size and power consumption, less sensitivity to environmental effects and low cost. Electronic oscillators generate low phase noise signals up to a few GHz but suffer phase noise degradation at higher frequencies, principally due to low Q-factor resonators. -
Review of Power Sources
RF Power Generation With Klystrons amongst other things Dr. C Lingwood Includes slides by Professor R.G. Carter and A Dexter Engineering Department, Lancaster University, U.K. and The Cockcroft Institute of Accelerator Science and Technology • Basic Klystron Principals • Existing technology • Underrating • Modulation anodes • Other options – IOTS – Magnetrons June 2011 ESS Workshop June 2 IOT June 2011 ESS Workshop June 3 IOT Output gap June 2011 ESS Workshop June 4 Velocity modulation • An un-modulated electron beam passes through a cavity resonator with RF input • Electrons accelerated or retarded according to the phase of the gap voltage: Beam is velocity modulated: • As the beam drifts downstream bunches of electrons are formed as shown in the Applegate diagram • An output cavity placed downstream extracts RF power just as in an IOT • This is a simple 2-cavity klystron • Conduction angle = 180° (Class B) June 2010 CAS RF for Accelerators, Ebeltoft 5 Multi-cavity klystron • Additional cavities are used to increase gain, efficiency and bandwith • Bunches are formed by the first (N-1) cavities • Power is extracted by the Nth cavity • Electron gun is a space- charge limited diode with perveance given by I0 K 3 2 V0 • K × 106 is typically 0.5 - 2.0 • Beam is confined by an axial magnetic field Photo courtesy of Thales Electron Devices June 2010 CAS RF for Accelerators, Ebeltoft 6 Efficiency and Perveance • Second harmonic cavity used to increase bunching • Maximum possible efficiency with second harmonic cavity is approximately 6 e 0.85 -
Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University
Marquette University e-Publications@Marquette Master's Theses (2009 -) Dissertations, Theses, and Professional Projects Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University Recommended Citation Stave, Nicholas Jon, "Analysis of BJT Colpitts sO cillators - Empirical and Mathematical Methods for Predicting Behavior" (2019). Master's Theses (2009 -). 554. https://epublications.marquette.edu/theses_open/554 ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR by Nicholas J. Stave, B.Sc. A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Milwaukee, Wisconsin August 2019 ABSTRACT ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR Nicholas J. Stave, B.Sc. Marquette University, 2019 Oscillator circuits perform two fundamental roles in wireless communication – the local oscillator for frequency shifting and the voltage-controlled oscillator for modulation and detection. The Colpitts oscillator is a common topology used for these applications. Because the oscillator must function as a component of a larger system, the ability to predict and control its output characteristics is necessary. Textbooks treating the circuit often omit analysis of output voltage amplitude and output resistance and the literature on the topic often focuses on gigahertz-frequency chip-based applications. Without extensive component and parasitics information, it is often difficult to make simulation software predictions agree with experimental oscillator results. The oscillator studied in this thesis is the bipolar junction Colpitts oscillator in the common-base configuration and the analysis is primarily experimental. The characteristics considered are output voltage amplitude, output resistance, and sinusoidal purity of the waveform. -
Comparative Overview of Inductive Output Tubes
! ESS AD Technical Note ! ESS/AD/0033 ! ! ! ! ! ! !!!!!!!!!! ! !!!Accelerator Division ! ! ! ! ! ! ! ! ! ! Comparative Overview of Inductive Output Tubes Rihua Zeng, Anders J. Johansson, Karin Rathsman and Stephen Molloy Influence of the Droop and Ripple of Modulator onRebecca Klystron SeviourOutput June 2011 23 February 2012 I. Introduction An IOT is a beam driven vacuum electronic RF amplifier. This document represents a comparative overview of the Inductive Output Tube (IOT). Starting with an overview of the IOT, we progress to a comparative discussion of the IOT relative to other RF amplifiers, discussing the advantages and limitations within the frame work of the RF amplifier requirements for the ESS. A discussion on the current state of the art in IOTs is presented along with the status of research programmes to develop 352MHz and 704MHz IOT’s. II. Background The Inductive Output Tube (IOT) RF amplifier was first proposed by Haeff in 1938, but not really developed into a working technology until the 1980s. Although primarily developed for the television transmitters, IOTs have been, and currently are, used on a number of international high- powered particle accelerators, such as; Diamond, LANSCE, and CERN. This has created a precedence and expertise in their use for accelerator applications. IOTs are a modified form of conventional coaxial gridded tubes, similar to the tetrode, although modified towards a linear beam structure device, similar to a Klystron. This hybrid construct is sometimes described as a cross between a klystron and a triode, hence Eimacs trade name for IOTs, the Klystrode. A schematic of an IOT, taken from [1], is shown in Figure 1. -
Solid State Modulators – Efficiency Considerations Focussing on Sic Devices –
Eidgenössische Technische Hochschule Zürich Laboratory for High Swiss Federal Institute of Technology Zurich Power Electronic Systems Solid State Modulators – Efficiency Considerations focussing on SiC Devices – J. Biela, S. Stathis, M. Jaritz, and S. Blume www.hpe.ee.ethz.ch / [email protected] Typical Topology of Solid State Pulse Modulator Systems AC/DC rectifier unit DC/DC converter for charging C-bank / voltage adaption Pulse generation unit Load e.g. klystron Constant Power Pulsed Power AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage ⎧⎪⎪⎪⎨⎪⎪⎪⎩ Sometimes integrated V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 2 33 Electronic Systems Typical Topology of Solid State Pulse Modulator Systems Grounded klystron load I Isolation with 50Hz transformer or I Isolated DC-DC converter Typical Isolation AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 3 33 Electronic Systems 29 MW(35MW)/140 µs Modulator for CLIC – System Efficiency – High Power Electronic Systems CLIC System Specifications Output voltage 150:::180 kV Settling time <8 µs Output power (pulsed) 29 MW (- 35 MW) Repetition rate 50 Hz Flat-top length 140 µs Average output power 203 kW (- 245 kW) Flat-top stability (FTS) <0.85 % Pulse to pulse repeatab. <100 ppm Rise time <3 µs 819 klystrons 819 klystrons 15 MW, 142 µs circumferences 15 MW, 142 µs delay loop 73 m drive beam -
Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
Application Note GaN or GaAs, TWT or Klystron - Testing High Power Amplifiers for RADAR Signals using Peak Power Meters Vitali Penso Applications Engineer, Boonton Electronics Abstract Measuring and characterizing pulsed RF signals used in radar applications present unique challenges. Unlike communication signals, pulsed radar signals are “on” for a short time followed by a long “off” period, during “on” time the system transmits anywhere from kilowatts to megawatts of power. The high power pulsing can stress the power amplifier (PA) in a number of ways both during the on/off transitions and during prolonged “on” periods. As new PA device technologies are introduced, latest one being GaN, the behavior of the amplifier needs to be thoroughly tested and evaluated. Given the time domain nature of the pulsed RF signal, the best way to observe the performance of the amplifier is through time domain signal analysis. This article explains why the peak power meter is a must have test instrument for characterizing the behavior of pulsed RF power amplifiers (PA) used in radar systems. Radar Power Amplifier Technology Overview Peak Power Meter for Pulsed RADAR Measurements Before we look at the peak power meter and its capabilities, let’s The most critical analysis of the pulsed RF signal takes place in the look at different technologies used in high power amplifiers (HPA) time domain. Since peak power meters measure, analyze and dis- for RADAR systems, particularly GaN on SiC, and why it has grabbed play the power envelope of a RF signal in the time domain, they the attention over the past decade. -
Arecibo 430 Mhz Radar System
file: 430txman 12-98 draft Aug. 31, 2005 Arecibo 430 MHz Radar System Operation and Maintenance Manual Written by Jon Hagen April 2001, 2nd ed. May 2005 1 NOTE With its high-voltage and high-power, and high places, this transmitter is potentially lethal. Proper precautions must be taken to avoid electrical shock, RF exposure, and X-ray exposure. (See Section 22). Emergency Procedure: ELECTRIC SHOCK Neutralize power 1. De-energize the circuit by means of switch or circuit breaker or cut the line by an insulated cutter. 2. Safely remove the victim from contact with the energy source by using dry wood stick, plastic rope, leather belt, blanket or any other non-conductive materials. Call for help 1. Others can help you administer first aid 2. Others can call professional medical help and/or arrange transfer facilities Cardio Pulmonary Resuscitation (CPR) 1. Check victim's ABC A - airway: Clear and open airway by head tilt - chin lift maneuver B - breathing: Check and restore breathing by rescue breathing C- circulation: Check and restore circulation by external chest compression 2. If pulse is present, but not breathing, maintain one rescue breathing (mouth to mouth resuscitation) as long as necessary. 3. If pulse and breathing are absent, give external chest compressions (CPR). 4. If pulse and breathing are present, stop CPR, stabilize the victim. 5. Caution: Only properly trained personnel should administer CPR to avoid further harm to 2 the victim. Administer first aid for shock 1. Keep the victim lying down, warm and comfortable to maintain body heat until medical assistance arrive. -
Silicon Bipolar Distributed Oscillator Design and Analysis
Science World Journal Vol 9 (No 4) 2014 www.scienceworldjournal.org ISSN 1597-6343 SILICON BIPOLAR DISTRIBUTED OSCILLATOR DESIGN AND ANALYSIS Article Research Full Length Aku, M. O. and *Imam, R. S. Department of Physics, Bayero University, Kano-Nigeria * Department of Physics, Kano University of Science and Technology, Wudil-Nigeria ABSTRACT between its input and output. It can be shown that there is a The design of high frequency silicon bipolar oscillator using trade-off between the bandwidth and delay in an amplifier common emitter (CE) with distributed output and analysis is (Lee, 1998). Distributed amplification provides a means to carried out. The general condition for oscillation and the take advantage of this trade-off in applications where the resulting analytical expressions for the frequency of delay is not a critical specification of the system and can be oscillators were reviewed. Transmission line design was compromised in favour of the bandwidth (distributed carried out using Butterworth LC filters in which the oscillator). It is noteworthy that the physical size of a normalised values and where used to obtain the distributed amplifier does not have to be comparable to the actual values of the inductors and capacitors used; this wavelength for it to enhance the bandwidth. Dividing the gain largely determines the performance of distributed oscillators. between multiple active devices avoids the concentration of The values of inductor and capacitors in the phase shift the parasitic at one place and hence eliminates a dominant network are used in tuning the oscillator. The simulated pole scenario in the frequency domain transfer function. -
Durham Research Online
Durham Research Online Deposited in DRO: 07 November 2018 Version of attached le: Accepted Version Peer-review status of attached le: Peer-reviewed Citation for published item: Brennan, D.R. and Chan, H.K. and Wright, N.G. and Horsfall, A.B. (2018) 'Silicon carbide oscillators for extreme environments.', in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing. Boca Raton, FL: CRC Press, pp. 225-252. Devices, circuits, and systems. Further information on publisher's website: https://doi.org/10.1201/9780429503634-10 Publisher's copyright statement: This is an Accepted Manuscript of a book chapter published by Routledge in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing on 31 July 2018 available online: http://www.routledge.com/9780429503634 Additional information: Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full DRO policy for further details. Durham University Library, Stockton Road, Durham DH1 3LY, United Kingdom Tel : +44 (0)191 334 3042 | Fax : +44 (0)191 334 2971 https://dro.dur.ac.uk Silicon Carbide Oscillators for Extreme Environments D.R. -
Economic Research Working Paper No. 27
Economic Research Working Paper No. 27 Breakthrough technologies – Semiconductor, innovation and intellectual property Thomas Hoeren Francesca Guadagno Sacha Wunsch-Vincent Economics & Statistics Series November 2015 Breakthrough Technologies – Semiconductors, Innovation and Intellectual Property Thomas Hoeren*, Francesca Guadagno**, Sacha Wunsch-Vincent** Abstract Semiconductor technology is at the origin of today’s digital economy. Its contribution to innova- tion, productivity and economic growth in the past four decades has been extensive. This paper analyzes how this breakthrough technology came about, how it diffused, and what role intellec- tual property (IP) played historically. The paper finds that the semiconductor innovation ecosys- tem evolved considerably over time, reflecting in particular the move from early-stage invention and first commercialization to mass production and diffusion. All phases relied heavily on con- tributions in fundamental science, linkages to public research and individual entrepreneurship. Government policy, in the form of demand-side and industrial policies were key. In terms of IP, patents were used intensively. However, they were often used as an effective means of sharing technology, rather than merely as a tool to block competitors. Antitrust policy helped spur key patent holders to set up liberal licensing policies. In contrast, and potentially as a cautionary tale for the future, the creation of new IP forms – the sui generis system to protect mask design - did not produce the desired outcome. Finally, copyright has gained in importance more re- cently. Keywords: semiconductors, innovation, patent, sui generis, copyright, intellectual property JEL Classification: O330, O340, O470, O380 Disclaimer: The views expressed in this article are those of the authors and do not necessarily reflect the views of the World Intellectual Property Organization or its member states. -
Quartz Resonator & Oscillator Tutorial
Rev. 8.5.3.6 Quartz Crystal Resonators and Oscillators For Frequency Control and Timing Applications - A Tutorial January 2007 John R. Vig Consultant. Most of this Tutorial was prepared while the author was employed by the US Army Communications-Electronics Research, Development & Engineering Center Fort Monmouth, NJ, USA [email protected] Approved for public release. Distribution is unlimited NOTICES Disclaimer The citation of trade names and names of manufacturers in this report is not to be construed as official Government endorsement or consent or approval of commercial products or services referenced herein. Table of Contents Preface………………………………..……………………….. v 1. Applications and Requirements………………………. 1 2. Quartz Crystal Oscillators………………………………. 2 3. Quartz Crystal Resonators……………………………… 3 4. Oscillator Stability………………………………………… 4 5. Quartz Material Properties……………………………... 5 6. Atomic Frequency Standards…………………………… 6 7. Oscillator Comparison and Specification…………….. 7 8. Time and Timekeeping…………………………………. 8 9. Related Devices and Applications……………………… 9 10. FCS Proceedings Ordering, Website, and Index………….. 10 iii Preface Why This Tutorial? “Everything should be made as simple as I was frequently asked for “hard-copies” of possible - but not simpler,” said Einstein. The the slides, so I started organizing, adding main goal of this “tutorial” is to assist with some text, and filling the gaps in the slide presenting the most frequently encountered collection. As the collection grew, I began concepts in frequency control and timing, as receiving favorable comments and requests simply as possible. for additional copies. Apparently, others, too, found this collection to be useful. Eventually, I I have often been called upon to brief assembled this document, the “Tutorial”. visitors, management, and potential users of precision oscillators, and have also been This is a work in progress. -
Design of Microwave Cavity Bandpass Filter from 25Ghz to 60Ghz
Ashna Shaiba. Int. Journal of Engineering Research and Application www.ijera.com ISSN: 2248-9622, Vol. 7, Issue 9, (Part -6) September 2017, pp.64-69 RESEARCH ARTICLE OPEN ACCESS Design of Microwave Cavity Bandpass Filter from 25GHz TO 60GHz *Ashna Shaiba1, Dr. Agya Mishra2 1Department of Electronics & Telecommunication Engineering, Jabalpur Engineering College , Jabalpur Madhya Pradesh, Pin- 482011 India 2Department of Electronics & Telecommunication Engineering, Jabalpur Engineering College , Jabalpur Madhya Pradesh, Pin- 482011 India Corresponding Author: Ashna Shaiba1 ABSTRACT This paper presents the design of microwave cavity band pass filter and analyzes the quality factor and insertion loss upto 60GHz .This paper discusses the performance of a cavity filter for different size of cavity at different frequencies upto 60GHz with calculation of quality factor and insertion loss. This type of microwave cavity filter will be useful in any microwave system wherein low insertion loss and high frequency selectivity are crucial, such as in base station, radar and broadcasting system. It is shown that the basis for much fundamental microwave filter theory lies in the realm of cavity filters, which indeed are actually used directly for many applications at microwave frequencies as high as 60 GHz. Many types of algorithm are discussed and compared with the object of pointing out the most useful references, especially for a researcher to the field. Keywords: Microwave cavity filters, band pass filter(BPF), quality factor, s-parameter, insertion loss, TE101 mode. ----------------------------------------------------------------------------------------------------------------------------- --------- Date of Submission: 05-09-2017 Date of acceptance: 21-09-2017 ----------------------------------------------------------------------------------------------------------------------------- --------- I. INTRODUCTION II. CONCEPTS OF MICROWAVE A filter is an electronic device used to select CAVITY FILTER a particular pass band range.