Lecture 15 - Microwave Oscillator Design Microwave Active Circuit Analysis and Design
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Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends
Optoelectronic Oscillators: Recent and Emerging Trends Optoelectronic Oscillators: Recent and Emerging Trends October 11, 2018 Afshin S. Daryoush(1), Ajay Poddar(2), Tianchi Sun(1), and Ulrich L. Rohde(2), Drexel University(1); Synergy Microwave(2) Highly stable oscillators are key components in many important applications where coherent processing is performed for improved detection. The optoelectronic oscillator (OEO) exhibits low phase noise at microwave and mmWave frequencies, which is attractive for applications such as synthetic aperture radar, space communications, navigation and meteorology, as well as for communications carriers operating at frequencies above 10 GHz, with the advent of high data rate wireless for high speed data transmission. The conventional OEO suffers from a large number of unwanted, closely-spaced oscillation modes, large size and thermal drift. State-of-the- art performance is reported for X- and K-Band OEO synthesizers incorporating a novel forced technique of self-injection locking, double self phase-locking. This technique reduces phase noise both close-in and far-away from the carrier, while suppressing side modes observed in standard OEOs. As an example, frequency synthesizers at X-Band (8 to 12 GHz) and K-Band (16 to 24 GHz) are demonstrated, typically exhibiting phase noise at 10 kHz offset from the carrier better than −138 and −128 dBc/Hz, respectively. A fully integrated version of a forced tunable low phase noise OEO is also being developed for 5G applications, featuring reduced size and power consumption, less sensitivity to environmental effects and low cost. Electronic oscillators generate low phase noise signals up to a few GHz but suffer phase noise degradation at higher frequencies, principally due to low Q-factor resonators. -
Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University
Marquette University e-Publications@Marquette Master's Theses (2009 -) Dissertations, Theses, and Professional Projects Analysis of BJT Colpitts Oscillators - Empirical and Mathematical Methods for Predicting Behavior Nicholas Jon Stave Marquette University Recommended Citation Stave, Nicholas Jon, "Analysis of BJT Colpitts sO cillators - Empirical and Mathematical Methods for Predicting Behavior" (2019). Master's Theses (2009 -). 554. https://epublications.marquette.edu/theses_open/554 ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR by Nicholas J. Stave, B.Sc. A Thesis submitted to the Faculty of the Graduate School, Marquette University, in Partial Fulfillment of the Requirements for the Degree of Master of Science Milwaukee, Wisconsin August 2019 ABSTRACT ANALYSIS OF BJT COLPITTS OSCILLATORS – EMPIRICAL AND MATHEMATICAL METHODS FOR PREDICTING BEHAVIOR Nicholas J. Stave, B.Sc. Marquette University, 2019 Oscillator circuits perform two fundamental roles in wireless communication – the local oscillator for frequency shifting and the voltage-controlled oscillator for modulation and detection. The Colpitts oscillator is a common topology used for these applications. Because the oscillator must function as a component of a larger system, the ability to predict and control its output characteristics is necessary. Textbooks treating the circuit often omit analysis of output voltage amplitude and output resistance and the literature on the topic often focuses on gigahertz-frequency chip-based applications. Without extensive component and parasitics information, it is often difficult to make simulation software predictions agree with experimental oscillator results. The oscillator studied in this thesis is the bipolar junction Colpitts oscillator in the common-base configuration and the analysis is primarily experimental. The characteristics considered are output voltage amplitude, output resistance, and sinusoidal purity of the waveform. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Silicon Bipolar Distributed Oscillator Design and Analysis
Science World Journal Vol 9 (No 4) 2014 www.scienceworldjournal.org ISSN 1597-6343 SILICON BIPOLAR DISTRIBUTED OSCILLATOR DESIGN AND ANALYSIS Article Research Full Length Aku, M. O. and *Imam, R. S. Department of Physics, Bayero University, Kano-Nigeria * Department of Physics, Kano University of Science and Technology, Wudil-Nigeria ABSTRACT between its input and output. It can be shown that there is a The design of high frequency silicon bipolar oscillator using trade-off between the bandwidth and delay in an amplifier common emitter (CE) with distributed output and analysis is (Lee, 1998). Distributed amplification provides a means to carried out. The general condition for oscillation and the take advantage of this trade-off in applications where the resulting analytical expressions for the frequency of delay is not a critical specification of the system and can be oscillators were reviewed. Transmission line design was compromised in favour of the bandwidth (distributed carried out using Butterworth LC filters in which the oscillator). It is noteworthy that the physical size of a normalised values and where used to obtain the distributed amplifier does not have to be comparable to the actual values of the inductors and capacitors used; this wavelength for it to enhance the bandwidth. Dividing the gain largely determines the performance of distributed oscillators. between multiple active devices avoids the concentration of The values of inductor and capacitors in the phase shift the parasitic at one place and hence eliminates a dominant network are used in tuning the oscillator. The simulated pole scenario in the frequency domain transfer function. -
Durham Research Online
Durham Research Online Deposited in DRO: 07 November 2018 Version of attached le: Accepted Version Peer-review status of attached le: Peer-reviewed Citation for published item: Brennan, D.R. and Chan, H.K. and Wright, N.G. and Horsfall, A.B. (2018) 'Silicon carbide oscillators for extreme environments.', in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing. Boca Raton, FL: CRC Press, pp. 225-252. Devices, circuits, and systems. Further information on publisher's website: https://doi.org/10.1201/9780429503634-10 Publisher's copyright statement: This is an Accepted Manuscript of a book chapter published by Routledge in Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing on 31 July 2018 available online: http://www.routledge.com/9780429503634 Additional information: Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full DRO policy for further details. Durham University Library, Stockton Road, Durham DH1 3LY, United Kingdom Tel : +44 (0)191 334 3042 | Fax : +44 (0)191 334 2971 https://dro.dur.ac.uk Silicon Carbide Oscillators for Extreme Environments D.R. -
Robust Wireless Power Transfer Using a Nonlinear Parity–Time-Symmetric Circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1
LETTER doi:10.1038/nature22404 Robust wireless power transfer using a nonlinear parity–time-symmetric circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1 Considerable progress in wireless power transfer has been made in PT-symmetric systems are invariant under the joint parity and the realm of non-radiative transfer, which employs magnetic-field time reversal operation14,15. In optical systems, where the symmetry coupling in the near field1–4. A combination of circuit resonance conditions can be met by engineering the gain/loss regions and and impedance transformation is often used to help to achieve their coupling, PT-symmetric systems have exhibited unusual efficient transfer of power over a predetermined distance of about properties16–20. A linear PT-symmetric system supports two phases, the size of the resonators3,4. The development of non-radiative depending on the magnitude of the gain/loss relative to the coupling wireless power transfer has paved the way towards real-world strength. In the unbroken or exact phase, eigenmode frequencies applications such as wireless powering of implantable medical remain real and energy is equally distributed between the gain and devices and wireless charging of stationary electric vehicles1,2,5–8. loss regions; in the broken phase, one of the eigenmodes grows expo- However, it remains a fundamental challenge to create a wireless nentially while the other decays exponentially. Recently, the concept power transfer system in which the transfer efficiency is robust of PT symmetry has been extensively explored in laser structures21–24. against the variation of operating conditions. Here we propose Theoretically, the inclusion of nonlinear gain saturation in the analysis theoretically and demonstrate experimentally that a parity–time- of a PT-symmetric system causes that system to reach a steady state symmetric circuit incorporating a nonlinear gain saturation element in a laser-like fashion that still contains the following PT symmetry provides robust wireless power transfer. -
Quartz Resonator & Oscillator Tutorial
Rev. 8.5.3.6 Quartz Crystal Resonators and Oscillators For Frequency Control and Timing Applications - A Tutorial January 2007 John R. Vig Consultant. Most of this Tutorial was prepared while the author was employed by the US Army Communications-Electronics Research, Development & Engineering Center Fort Monmouth, NJ, USA [email protected] Approved for public release. Distribution is unlimited NOTICES Disclaimer The citation of trade names and names of manufacturers in this report is not to be construed as official Government endorsement or consent or approval of commercial products or services referenced herein. Table of Contents Preface………………………………..……………………….. v 1. Applications and Requirements………………………. 1 2. Quartz Crystal Oscillators………………………………. 2 3. Quartz Crystal Resonators……………………………… 3 4. Oscillator Stability………………………………………… 4 5. Quartz Material Properties……………………………... 5 6. Atomic Frequency Standards…………………………… 6 7. Oscillator Comparison and Specification…………….. 7 8. Time and Timekeeping…………………………………. 8 9. Related Devices and Applications……………………… 9 10. FCS Proceedings Ordering, Website, and Index………….. 10 iii Preface Why This Tutorial? “Everything should be made as simple as I was frequently asked for “hard-copies” of possible - but not simpler,” said Einstein. The the slides, so I started organizing, adding main goal of this “tutorial” is to assist with some text, and filling the gaps in the slide presenting the most frequently encountered collection. As the collection grew, I began concepts in frequency control and timing, as receiving favorable comments and requests simply as possible. for additional copies. Apparently, others, too, found this collection to be useful. Eventually, I I have often been called upon to brief assembled this document, the “Tutorial”. visitors, management, and potential users of precision oscillators, and have also been This is a work in progress. -
Eimac Care and Feeding of Tubes Part 3
SECTION 3 ELECTRICAL DESIGN CONSIDERATIONS 3.1 CLASS OF OPERATION Most power grid tubes used in AF or RF amplifiers can be operated over a wide range of grid bias voltage (or in the case of grounded grid configuration, cathode bias voltage) as determined by specific performance requirements such as gain, linearity and efficiency. Changes in the bias voltage will vary the conduction angle (that being the portion of the 360° cycle of varying anode voltage during which anode current flows.) A useful system has been developed that identifies several common conditions of bias voltage (and resulting anode current conduction angle). The classifications thus assigned allow one to easily differentiate between the various operating conditions. Class A is generally considered to define a conduction angle of 360°, class B is a conduction angle of 180°, with class C less than 180° conduction angle. Class AB defines operation in the range between 180° and 360° of conduction. This class is further defined by using subscripts 1 and 2. Class AB1 has no grid current flow and class AB2 has some grid current flow during the anode conduction angle. Example Class AB2 operation - denotes an anode current conduction angle of 180° to 360° degrees and that grid current is flowing. The class of operation has nothing to do with whether a tube is grid- driven or cathode-driven. The magnitude of the grid bias voltage establishes the class of operation; the amount of drive voltage applied to the tube determines the actual conduction angle. The anode current conduction angle will determine to a great extent the overall anode efficiency. -
Shults Robert D 196308 Ms 10
AN INVESTIGATION OF THE INFLUENCE OF CIRCUIT PARAMETERS ON THE OUTPUT WAVESHAPE OF A TUNNEL DIODE OSCILLATOR A THESIS Presented to The Faculty of the Graduate Division by Robert David Shults In Partial Fulfillment of the Requirements for the Degree Master of Science in Electrical Engineering Georgia Institute of Technology June, I963 AN INVESTIGATION OF THE INFLUENCE OF CIRCUIT PARAMETERS ON THE OUTPUT WAVESHAPE OF A TUNNEL DIODE OSCILLATOR Approved: —VY -w/T //'- Dr. W. B.l/Jonesj UJr. (Chairman) _A a t~l — Dry 3* L. Hammond, Jr. V ^^ __—^ '-" ^^ *• Br> J. T. Wang * Date Approved by Chairman: //l&U (A* l/j^Z) In presenting the dissertation as a partial, fulfillment of the requirements for an advanced degree from the Georgia Institute of Technology, I agree that the Library of the Institution shall make it available for inspection and circulation in accordance witn its regulations governing materials of this type. I agree -chat permission to copy from, or to publish from, this dissertation may be granted by the professor under whose direction it was written^ or, in his absence, by the dean of the Graduate Division when luch copying or publication is solely for scholarly purposes ftad does not involve potential financial gain. It is under stood that any copying from, or publication of, this disser tation which involves potential financial gain will not be allowed without written permission. _/2^ d- ii ACKNOWLEDGMEBTTS The author wishes to thank his thesis advisor, Dr. W. B„ Jones, Jr., for his suggestion of the problem and for his continued guidance and encouragement during the course of the investigation. -
UNIVERSITY of NEVADA, RENO Introduction to Quartz Resonator
UNIVERSITY OF NEVADA, RENO Introduction to Quartz Resonator Based Electronic Oscillators and Development of Electronic Oscillators Using Inverted-Mesa Etched Quartz Resonators A thesis submitted on partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN ELECTRICAL ENGINEERING By Matthew B. Anthony Thesis Advisor Dr. Indira Chatterjee August 2009 Copyright by Matthew B. Anthony 2009 All Rights Reserved THE GRADUATE SCHOOL We recommend that the thesis prepared under our supervision by MATTHEW B. ANTHONY entitled Introduction To Quartz Resonator Based Electronic Oscillators And Development Of Electronic Oscillators Using Inverted-Mesa Etched Quartz Resonators be accepted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE Indira Chatterjee, Ph.D., Advisor Bruce P. Johnson, Ph.D., Committee Member Scott Talbot, M.S., Committee Member Ronald Phaneuf, Ph.D., Graduate School Representative Marsha H. Read, Ph. D., Associate Dean, Graduate School August, 2009 i ABSTRACT The current work is primarily focused on the topic of the advancement of low phase noise and low jitter quartz crystal based electronic oscillators to frequencies beyond those presently available using quartz resonators that are manufactured using the traditional method that processes the entire sample to a uniform thickness. The method of inverted-mesa etching allows the resonant part of the quartz sample to be made much thinner than the remainder of the sample – enabling higher resonant frequencies to be achieved. The current work will introduce and discuss the importance of phase noise and jitter in electronic oscillator applications such as wireless communication systems and sampled data systems. General oscillator and quartz resonator background will be provided to facilitate the understanding of the oscillator circuit used herein. -
Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators
Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators Firas Mohammed Ali Al-Raie [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Suhad Hussein Jasim [email protected] University of Technology - Department of Electrical Engineering - Baghdad - Iraq Abstract: In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z- parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal Journal of Al Rafidain University College 427 ISSN (1681-6870) Effect of Load Impedance on the Firas M. Ali , Suhad H. Jasim Issue No. 39/2016 Performance of Microwave… optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. -
Wideband Tunable Microwave Signal Generation in a Silicon-Based Optoelectronic Oscillator
Wideband tunable microwave signal generation in a silicon-based optoelectronic oscillator Phuong T.Do1,*, Carlos Alonso-Ramos2, Xavier Le Roux2, Isabelle Ledoux1, Bernard Journet1, and Eric Cassan2 1LPQM (CNRS UMR-8537,Ecole´ normale superieure´ Paris-Saclay, Universite´ Paris-Saclay, 61 avenue du President´ Wilson, 94235 Cachan Cedex, France 2C2N (CNRS UMR-9001), Univ. Paris-Sud, Universite´ Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France *[email protected] ABSTRACT Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phase-modulation to intensity-modulation conversion, requiring precise control of the phase-modulation. Here, we propose a new approach enabling Si OEOs with wide tunability and direct intensity-modulation to microwave conversion. The microwave signal is created by the beating between an optical source and single sideband modulation signal, selected by an add-drop ring resonator working as an optical bandpass filter. The tunability is achieved by changing the wavelength spacing between the optical source and resonance peak of the resonator. Based on this concept, we experimentally demonstrate microwave signal generation between 6 GHz and 18 GHz, the widest range for a Si-based OEO. Moreover, preliminary results indicate that the proposed Si OEO provides precise refractive index monitoring, with a sensitivity of 94350 GHz/RIU and a 8 potential limit of detection of only 10− RIU, opening a new route for the implementation of high-performance Si photonic sensors.