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The Preparation and Reactions of the Lower Chlorides and Oxychlorides of Silicon Joseph Bradley Quig Iowa State College
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1926 The preparation and reactions of the lower chlorides and oxychlorides of silicon Joseph Bradley Quig Iowa State College Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Quig, Joseph Bradley, "The preparation and reactions of the lower chlorides and oxychlorides of silicon " (1926). Retrospective Theses and Dissertations. 14278. https://lib.dr.iastate.edu/rtd/14278 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UlVli films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and impiroper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overiaps. -
WO 2014/029634 Al 27 February 2014 (27.02.2014) P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2014/029634 Al 27 February 2014 (27.02.2014) P O P C T (51) International Patent Classification: DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, C09C 1/02 (2006.01) HN, HR, HU, ID, IL, ΓΝ , IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, (21) International Application Number: MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, PCT/EP20 13/066666 OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (22) International Filing Date: SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, 8 August 2013 (08.08.2013) TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (25) Filing Language: English (84) Designated States (unless otherwise indicated, for every (26) Publication Language: English kind of regional protection available): ARIPO (BW, GH, (30) Priority Data: GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, 1218 1089.9 20 August 2012 (20.08.2012) EP UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 61/693,350 27 August 2012 (27.08.2012) US TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, (71) Applicant: OMYA INTERNATIONAL AG [CH/CH]; MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, Baslerstrasse 42, CH-4665 Oftringen (CH). -
On the Solubility of Radium Sulfate and Carbonate
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Chalmers Publication Library THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING On the solubility of radium sulfate and carbonate Artem Vasilyevich Matyskin Nuclear Chemistry Department of Chemistry and Chemical Engineering CHALMERS UNIVERSITY OF TECHNOLOGY Gothenburg, Sweden 2016 On the solubility of radium sulfate and carbonate © ARTEM VASILYEVICH MATYSKIN, 2016 Technical report number: 2016:04 ISSN number: 1652-943X Nuclear Chemistry Department of Chemistry and Chemical Engineering Chalmers University of Technology SE – 412 96 Göteborg Sweden Telephone +46(0)31-772 1000 Cover: Radium sulfate powder Chalmers Reproservice Gothenburg, Sweden 2016 On the solubility of radium sulfate and carbonate Artem V. Matyskin Nuclear Chemistry Department of Chemistry and Chemical Engineering Chalmers University of Technology Abstract Radium is one of the most toxic elements and its concentration in different human activities and migration from man-made wastes provokes a strong interest in environmental science. To be able to model the migration process, reliable experimental thermodynamic data of radium compounds are needed. In this work details of the safe radium source disassembly which were previously used in brachytherapy are described and different methods for conversion of RaSO4 into aqueous solution are reviewed. The method of choice included three cycles of RaSO4 heating in 1.5 M Na2CO3 up to 85 ºC, cooling and subsequent removal of supernatant. X-ray diffraction studies showed that the method allows the synthesis of amorphous RaCO3, which can be dissolved in mineral acid. Gamma spectrometric measurements showed that most of the initial RaSO4 was 210 converted into solution and that 7 ± 1 % of the initial Pb was co-precipitated with RaCO3. -
Effects of Intravenous Injections of Radium Bromide. by R
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by PubMed Central EFFECTS OF INTRAVENOUS INJECTIONS OF RADIUM BROMIDE. BY R. BURTON-OPITZ AND GUSTAVE M. MEYER. (From the Laboratories of Physiology and Physiological Chemistry of Colum- bia University, at the College of Physicians and Surgeons, New York.) PLATE XVI. The present study was undertaken with a view of determining in a general way the effects of intravenous administration of ra- dium upon the circulation and respiration. The problem was sug- gested to us by Dr. William J. Gies, under whose guidance a number of researches, dealing with the more extensive question of the action of radium upon animal and vegetable cells, have re- cently been carried on in the laboratories of Columbia University.1 For the radium used in these experiments we are greatly in- debted to Mr. Hugo Lieber. It was supplied to us in the form of the bromide, in preparations of 240 , iooo, and io,ooo activities. The strength of the solution used was the same in all cases. It contained 45 rag. of the dry substance in 25 c. c. of the solvent; each cubic centimeter of the solution, therefore, contained 1.8 rag. of the radium preparation. The amount of the radium present varies directly with the ra- dio-activity. Preparations of ~,5oo,ooo activity are said to repre- sent pure radium bromide3 Taking this figure as the standard of purity, ~ .8 rag. of the radium preparation of io,ooo activity contained approximately only o.o~ 26 mg., the same quantity of the preparation of ~ooo activity contained o.ooi26 rag. -
AAAS. the American Association for the Advancement of Science Was
A AAAS. The American Association for the Advancement of Science was movement through a planetary atmosphere to provide thermal protection founded in 1848 and incorporated in 1874. Its objectives are to further the to the underlying structure. See also Ablating Material. work of scientists, to facilitate cooperation among them, to foster scientific freedom and responsibility, to improve the effectiveness of science in ABRASION. All metallic and nonmetallic surfaces, no matter how promoting human welfare, to advance education in science, and to increase smooth, consist of minute serrations and ridges that induce a cutting or public understanding and appreciation for the importance and promise of tearing action when two surfaces in contact move with respect to each the methods of science in human progress. The AAAS head quarters is other. This wearing of the surfaces is termed abrasion. Undesirable abrasion in Washington, DC. Additional information on the AAAS can be found at may occur in bearings and other machine elements, but abrasion is also http://www.aaas.org/ and http://www.sciencemag.org/ . adapted to surface finishing and machining, where the material is too hard to be cut by other means, or where precision is a primary requisite. ABACA. The sclerenchyma bundles from the sheathing leaf bases of Temperature is a significant factor: friction may raise the temperature of Musa textilis, a plant closely resembling the edible banana plant. These the surface layers to the point where they become subject to chemical bundles are stripped by hand, after which they are cleaned by drawing over attack. Abrasion causes deterioration of many materials, especially of a rough knife. -
(12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER Et Al
US 2016O115593A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER et al. (43) Pub. Date: Apr. 28, 2016 (54) AMINO(IODO)SILANE PRECURSORS FOR HOIL 2/3 II (2006.01) ALDACVD SILICON-CONTAINING FILM C23C I6/34 (2006.01) APPLICATIONS AND METHODS OF USING C23C I6/56 (2006.01) THE SAME (52) U.S. Cl. CPC ......... C23C 16/45553 (2013.01); C23C 16/345 (71) Applicant: American Air Liquide, Inc., Fremont, (2013.01); C23C I6/45536 (2013.01); C23C CA (US) I6/56 (2013.01); HOIL 21/31 III (2013.01); HOIL 21/02211 (2013.01); HOIL 21/02274 (72) Inventors: Glenn KUCHENBEISER, Newark, DE (2013.01); HOIL 2L/0228 (2013.01); HOIL (US); Bastien LEFEVRE, Wilmington, 21/0217 (2013.01) DE (US) (21) Appl. No.: 14/984,866 (57) ABSTRACT (22) Filed: Dec. 30, 2015 Publication Classification Disclosed are amino(iodo)silane precursors, methods of syn thesizing the same, and methods of using the same to deposit (51) Int. Cl. silicon-containing films using vapor deposition processes. C23C I6/455 (2006.01) The disclosed amino(iodo)silane precursors include SiHI(N HOIL 21/02 (2006.01) (iPr)) or SiHI(N(iBu)). Patent Application Publication Apr. 28, 2016 Sheet 1 of 6 US 2016/O115593 A1 FG Patent Application Publication Apr. 28, 2016 Sheet 2 of 6 US 2016/O115593 A1 100 T - - - - 90 - SiH(NMe2)2 atmoc 44mg 80 - - - - SiH(NMe2)2 closed cup 70 - 50 - 30 - 10 - O 1 OO 2OO 300 400 500 Temperature (°C) FIG. 3 - - SiH2(NEt2) atmoc 41 mg SiH2(NEt2) closed Cup 22mg s s cus s 9 CD 8 300 Temperature (°C) FIG. -
Dec. 12, 1961 H
Dec. 12, 1961 H. W. LNG 3,012,861 PRODUCTION OF SILICON Filed Jan. 15, 1960 zzzzz INVENTOR HARRY W. LING ATTORNEY 3,012,861 United States Patent Office Patented Dec. 12, 1961 1. 2 3,012,861 . Referring now to this drawing, there is shown a ver PRODUCTION OF SELICON tically disposed cylindrical or tubular reactor 1 with a Harry W. Ling, Wilmington, Del assignor to E. I. du conical bottom 3 provided with inlet 4 for entrance of Pont de Nemours and Company, Wilmington, Dei, a reactant fluidizing gas. The reactor 1 is sufficiently high corporation of Delaware to provide for a 2-3 times expansion of the bed 6 and also Filed Jan. 15, 1960, Ser. No. 3,708. a disengaging space 7 above the bed 6 to reduce solids 9. Claims. (C. 23-223.5) blowover to a minimum. A valved inlet 8 is provided for introduction of silicon bed particles. The reaction This invention relates to the production of elemental by-product gases are removed from the reactor through silicon. More particularly, it relates to a new and im 10 the outlet 9 and cyclone 13 which can be kept hot by a proved method of thermally decomposing volatile silicon furnace (not shown). These gases then pass to a con compounds. densing system 10 and cold trap (not shown) through Silicon can be produced by thermally decomposing sili which the vacuum pumping system (not shown) is con con iodide at a reduced pressure -on an electrically nected. The reactor 1 is maintained at the desired reactor heated, incandescent metal filament. -
Chemistry of Uo2 Fuel Dissolution in Relation to the Disposal of Used Nuclear Fuel
AECL-1 0395 ATOMIC ENERGY L'fNERGIE ATOMIQUE OF CANADA LIMITED DU CANADA LIMITEE CHEMISTRY OF U02 FUEL DISSOLUTION IN RELATION TO THE DISPOSAL OF USED NUCLEAR FUEL CHIMIE DE LA DISSOLUTION DU COMBUSTIBLE D'U02 EN RAPPORT AVEC LE STOCKAGE PERMANENT DU COMBUSTIBLE NUCLEAIRE USf S. Sunder, D. W. Shoesmith Whiteshell Laboratories Laboratoires de Whiteshell Pinawa, Manitoba ROE 1LO September 1991 septembre i-;fII 4.t .i I~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~ Copyrightof Canada©Atomic Energy L~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~mited, 1991.~~~~~~~~~~~~~~~~~~~~~~~~~ AECL RESEARCH CHEMISTRY OF U02 FUEL DISSOLUTION IN RELATION TO THE DISPOSAL OF USED NUCLEAR FUEL by S. Sunder and D.W. Shoesmith Whiteshell Laboratories Pinava, Manitoba ROE iLO 1991 AECL-10395 CHIMIE DE LA DISSOLUTION DU COMBUSTIBLE D'U02 EN RAPPORT AVEC LE STOCKAGE PERMANENT DU COMBUSTIBLE NUCLtAIRE US9 par S. Sunder et D.W. Shoesmith R9SUM9 Dans ce rapport, on examine la chimie de la dissolution de l'U02 dans des conditions se rapportant au stockage permanent du combustible nucleaire us6 dans une enceinte construite en formation g~ologique. Il permet la con- naissance chimique necessaire pour selectionner le modele le plus approprie de calcul de la vitesse de dissolution du combustible d'UO2 dans une en- ceinte de stockage permanent de dechets nucleaires. 11 decrit brievement la structure a l'etat solide de divers oxydes d'uranium; il examine la nature et le mecanisme de l'oxydation et de la dissolution de VUO2 dans les eaux -
WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every B01J 31/04 (2006.01) B01J 31/18 (2006.01) kind of national protection available): AE, AG, AL, AM, B01J 31/14 (2006.01) B01J 31/22 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, (21) Number: International Application DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/US20 12/065285 HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, (22) International Filing Date: KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, 15 November 2012 (15.1 1.2012) ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, (25) Filing Language: English RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, (26) Publication Language: English TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 13/323,328 12 December 201 1 (12. 12.201 1) US (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant (for all designated States except US): CHEV¬ GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, RON PHILLIPS CHEMICAL COMPANY LP UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, [US/US]; 10001 Six Pines Drive, The Woodlands, Texas TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 77380 (US). -
Silicon Semiconductor Technology
Runyan TEXAS INSTRUMENTS INCORPORATED Semiconductor·Components Division EXAS INSTRUMENTS INCORPORATED Silicon Semiconductor Technology W. R. Runyan Texas Instruments Electronics Series McGraw·HiII McGraw-Hili Beok Company 54276 Silicon Semiconductor Technology The Engineering Staff of Texas Instruments Incorporated • TRANSISTOR CIRCUIT DESIGN Runyan • SILICON SEMICONDUCTOR TECHNOLOGY Sevin • FIELD-EFFECT TRANSISTORS Silicon Semiconductor Technology w. R. Runyan Semiconductor Research and Development Laboratory Texas Instruments Incorporated McGRAW-HILL BOOK COMPANY New York San Francisco Toronto London Sydney SILICON SEMICONDUCTOR TECHNOLOGY Copyright © 1965 by Texas Instruments Incorporated. All Rights Reserved. Printed in the United States of America. This book, or parts thereof, may not be reproduced in any form without permission of Texas Instru ments Incorporated. Library of Congress Catalog Card Number 64-24607. Information contained in this book is believed to be accurate and reliable. However, responsibility is assumed neither for its use nor for any infringement of patents or rights of others which may result from its use. No license is granted by implication or otherwise under any patent or patent right of Texas Instruments or others. 54276 345678 9-MP-9 8 7 6 Preface The purposes of this book are to provide in a single reference the properties of silicon important to those who would use it as a semiconductor and to discuss at length several of the more important semiconductor technologies, such as crystal growing and diffusion. It had its beginning in a set of notes I began compiling shortly after starting work in the semiconductor industry. Since most of my activ ities were with silicon, these notes were restricted to information pertaining to that material. -
Pickard Hall
(iJ University of Missouri Environmental Health & Safety 180 General Services Building Columbia, MO 65211 PHONE 573-882-7018 FAX 573-882-7940 EMAIL [email protected] WEB ehs.missouri.edu September 25, 2018 Mike LaFranzo Senior Health Physicist Region III - Division of Nuclear Materials and Safety US Nuclear Regulatory Commission 2443 Warrenville Road, Suite 210 Lisle, IL 60532-4352 Re: Response to additional information required to continue amendment review of Pickard Hall Characterization -Reference ML No. 18138A148, Mail Control No. 586692, License No. 24-00513-32, Docket No. 030-02278 Dear Mr. LaFranzo: As requested in the May 1, 2018 decommissioning site visit, please see the attached updated Pickard Hall Site Characterization Plan (SCP) and Pickard Hall Decommissioning Project (PHDP) Radiation Safety Manual (RSM). Revisions to the SCP and PHDP RSM address the NRC's comments from the site visit concerning additional descriptions of radiological airborne controls and monitoring along with further elaboration of the licensee's audit program with regard to quality assurance and quality control monitoring efforts of the contractor while performing work with licensed material. Additionally, MU has included all commitments made in previous requests for additional information into the revised SCP and/or revised RSM. The revisions will supersede any commitments made in prior RAI responses. If you have any questions, please do not hesitate to contact me at (573) 882-7018. Felicity Beckfield, MS, CHP Radiation Safety Officer cc: Todd Houts, Director, MU Environmental Health & Safety encl: Attachment 1: Pickard Hall Site Characterization Plan Attachment 2: Pickard Hall Decommissioning Project Radiation Safety Manual • Attachment 1: Pickard Hall Site Characterization Plan • • ,, University of Missouri • Pickard Hall Site Characterization Plan Pickard Hall 405 S. -
Chemical Names and CAS Numbers Final
Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride