Molar Heat Capacity and Heat of Fusion of Silicon Tetraiodide*

Total Page:16

File Type:pdf, Size:1020Kb

Molar Heat Capacity and Heat of Fusion of Silicon Tetraiodide* 229 Molar Heat Capacity and Heat of Fusion of Silicon Tetraiodide* By Toshio Kurosawa**, Ryosuke Hasegawa** and Tetsuo Yagihashi** The molar heat capacity of silicon tetraiodide, SiI4, used as a source material in the iodide process of silicon prepara- tion was measured by means of an adiabatic calorimeter which can be used for continuous measurement. The molar heat capacities of solid and liquid silicon tetraiodide obtained were Cp=19.59+0.0209T eal/mol deg and Cp=35.25+0.00987Tcal/mol deg, respectively. The melting point was 120.5℃, and the heat of fusion and the entropy of fusion were 4.70kcal/mol and 11.9cal/mol deg, respectively. The heat contents, free energy functions and standard entropy of S298=43.7cal/mol deg were derived for silicon tetraiodide from the experimental values and thermochemical data. Moreover, the molar heat capacities of pure chromium, fused quartz and highly pure silicon were also measured, the values of which were in good agreement with those in the previous literature. (Received April 26, 1965) helices. The sampling capsule was also made of quartz I. Introduction and theshape is shown in Fig.1(A). Thiscapsule was hprevious reports(1)~(4), various processes relating COnlleCted With the diStilation column and filled with to the hydrogen reduction of silicon tetraiodide have been the main fraction of silicon tetraiodide in argon atmos- described as a part of the research program on the pre- phere. After separated from the column, it was sealed parationof pure silicon.In regardto thermochemicalhy a ball joint①, and then two capillaries ② were fused off under evacuation from the capsule. The distilled properties of silicontetraiodide, the measurement of vapor pressure by Andersen (5) and the decomposition equii- brium by Schafer were known previously, but much re- mains unknown.for the molar heat capacity and the heat offusion. By theuse ofhighly pure silicon tetraiodide preparedby a synthesisfollowed by distillation,the molarheat capacity and theheat of fusionof siliconte- traiodide were measured in the present study. The heat contents and the free energy functions from room tem- peratureto the boilingpoint, were alsoderived. An investigation of the molar heat capacity and the heat of fusion.is considered to be very significant from the metallurgical point of view as well as for the treatment of this material. Ⅱ. Sample and Measuring Procedure 1.Silicon Tetraiodide Silicon tetraiodide was prepared by reacting the argon- carried iodine at 700℃ with crushed crude silicon of 98.4% purity and 30~60mesh size. The synthesized silicon tetraiodide was introduced into the distillation Fig.1(A) Silica vessel for the chemical compound. columnand purifiedin argon atmosphere, The number (B)Sample for solid block. of theoretical windings was thirteen and the column was ①Ball joint ②Capillary ③Side tube for argon made of transparent quartz and packed with single turn inlet or vacuum ④Hole for internal heater ⑤Hole for temperature measurement ⑥Hole for adiabatic controll * This paper was published in Japanese in the Journal of the Japan Institute of Metals, 29 (1965), 267. **_National Research Institute for Metals, Tokyo, Japan. silicontetraiodide was hydrated with excess deionized (1) T. Kurosawa and T. Yagihashi: J. Japan Inst. Metals, 26 water,and the precipitatewas calcinedto silica.Silica (1962), 122. thus obtainedwas analyzedby emissionspectrography. (2) T. Kurosawa, T. Ishikawa and T.Yagihashi: ibid, 26 (1962), 274. the impuritesin the originalcrude siliconwere not ob- (3) T. Kurosawa, T. Ishikawa and T. Yagihashi: ibid,26 (1962), servedexcept for a traceof aluminum. 314. Gravimetricanalysis of the sample showed 5.2%of (4) T. Kurosawa and T. Yagihashi: ibid, 27 (1963), 221. siliconand 93.6%of iodine(theoreticalvalues:5 .2%Si (5) H. C. Andersen and L. H. Belz: J. Amer. Chem. Soc., 75 (1953), 4828. and 94.8%I). Moreover,the presenceof SiI2in silicon Trans. JIM 1965 Vol.6 230 Molar Heal Capacityand Heat ofFusiou of SiliconTetraiodide tetraiodide prepared at 500~700℃ was assumed to be standard potential of the required temperatures was negligible from the thermodynamic consideration based present. Then the time requried for the sample tempera- on the equation by Schafer(6), ture to become equal to the ,present temperature, namely the time required for the temperature increment of 2℃, was recoreded by the automatic controller. Further, iodine due to the decomposition of the sample was not found. 2.Apparatus and procedure The adiabatic calorimeter used for specific heat and differential thermal analysis was the apparatus made by Rigaku Denki Co., the calorimetry assemaly of which is shown in Fig.2. The sample ⑥ was set in the center Fig.3 Diagramaticalrepresentation formeasurement. The Alumel-Chromel thermocouplesused in this ex- perimentwere made by HoskinsGo, which were calibrat- ed by the meltingpoints of iodine,indium and tin. In order to standardizethe apparatus,the molar heat capacitiesof electrolyticchromium of 99.9%purity pre- pared by thisinstitute and high-puritysilicon of P type were measured as examplesof high thermal conductivity. Fused quartzwas used as an example of low thermal Fig.2 Adiabatic calorimeter. conductivity,These samples were made in the shape ①Outer shell ② Shield plates ③ Electric furnace shown in Fig.1(B). ④Adiabatic container ⑤Quartz supporter ⑥Sample ⑦Internal heater ⑧Thermocouple ⑨Differential In the.caseof chromium and silicon,a silicacap was thermceouple. put on the internalheater for insulation,and a piece of mica was plugged between the sample and the tipof the of the nickel adiabatic container ④ which was mounted thermocouple. In addition, measurements were carried on the quartz supporter ⑤. The internal heater out at one atmospheric pressure of argon in order to located in the center of the sample was a nichrome spiral, avoid oxidation of the sample. and two nickel wires were welded in parrallel to measure If the sample is heated by the constant wattage W, and the voltage, In order to heat the sample, a constant if it takes Δt seconds for the sample at θ℃ to become wattage was supplied to the internal heater using a watt (θ+Δ θ)℃, the following equation(1)is obtained on the stabilizer. The difference in temperature between the assumption that the heat supplied is completely absorbed sample and the nickel container was checked during the in the sample. experiment with an Alumel-Chromel differential ther- mocouple⑨, and tbe difference was maintained almost (1) nil by the furnace ③ which is adjusted by the controller Here 0.239 is the conversion factor from wattage to system. The fluctuation in wattage supplied to the in- calorie and consequently the right side of equation(1)is ternal heater was within 1%, and the difference between the thermal amount supplied to the sample for dt seconds, θ1 and θ2 was within ±0.05℃, Athermocouple for Mand Cp are the molar quantity and the molar heat measuring the temperature of the sample was also insert- capacity of the sample, respectively. Therefore the first ed into another hole. The nickel wires, differential ther- term of the left side is the heat absorbed in the sample. mocouple and temperature measuring thermocouple were The heat absorbed in the quartz capsule,cap and in- all insulated by thin alumina tubes, ternal heater and others is expressed by the second term, In this experiment the punched tape which was pro- and mi and Cpi are the molar quantities and molar heat grammed for the standard thermal potential of tempera- capacities of these materials, The amounts of heat tures at intervals of 2℃ was used, and a continuous consumed by the internal heaters, thermocouples and measurement was made by the system shown in Fig.3. small high-aluminatubes locatedin the sample capsule The punched tape was set on the tape reader and the were estimatedto be 0.05cal/deg,being very smallwhen compared with the other values. (6)H.Sehafer und B.Morcher:Z.anorg. allgen.Chem.,290 (1957),279. The heat of fusionof silicontetraiodide, Hf was ob- Toshio Kurosawa, Ryosuke Hasegawa and Tetsuo Yagihashi 231 tained from the peak recorded in the temperature-time lines are the values ohtained by Perry(7)and Goldsmith diagram. If the time required for melting is t, Hf can (8) be expressed by the following equation(2): The equations of the materials obtained in this experi- ment were determined as follows: (2 Chromium:Cp=4.39+0.00354T(room temp.~500℃) Ⅲ.Experimental Results and Discussion 1.Molar heat capacities of standardized materials The molar heat capacities of silver, iron highly pure silicon, fused quartz and pure chromium were measured to examine the equipment, and the results obtained for chromium, fused quartz and silicon are described in this report. The molar heat capacities of chromium(99.9% purity; 0,0.09%;N,0.0037%;H,trace;arc-melted after electrolysis using chromic acid and heat treatment in hydrogen), transparent fused quartz of 99.99% purity and highly pure silicon(P type;resistivity,1000~1700 Ω-cm;life time,600~800μ-sec;impllrity conoentra- tion.,9.1×1012atoms/cc;refined hy the floating zone method)are shown in Figs.4~6. Fig.6 Molar heat capacity of silicon. Fused quartz:Cp=13.36+0.00421T -316100/T2(room temp .~300℃) Silicon:Cp=6.61+0.000288T -158400/T2(room temp .~400℃). In general,excessively fast or slowheating caused dif- ficultyin the adiabaticcontrol and deviationsin the requiredtime. Itis therefore necessary to selecta pro- per heatingrate for each sample. The properheating rate for the present experiment was found to be in the range of 1~3℃/min. Moreover, the atmosphere within the outer shell was atmospheric air or argon. 2.Molar heat capacity, heat of fusion and melting point of silicon tetraiodide Fig.4 Molar heat capacityof chromium. The molar heat capacity of silicon tetraiodide obtained Fig.5 Molarheat capacity offused quartz. Fig.7 Molarheat capacity ofsilicon tetraiodide.
Recommended publications
  • Pp-03-25-New Dots.Qxd 10/23/02 2:41 PM Page 778
    pp-03-25-new dots.qxd 10/23/02 2:41 PM Page 778 778 PRAESODYMIUM PRAESODYMIUM [7440–10–0] Symbol Pr; atomic number 59; atomic weight 140.908; a lanthanide–series rare earth element; belongs to the cerium group of rare earths; electron con- figuration [Xe] 4f36s2; partially filled f subshell; valence states +3, +4; most 3+ stable oxidation state +3; electrode potential E°/V (aq) for Pr + 3e¯ ↔ Pr is –2.35 V; atomic radius 1.828 Å; first ionization potential 5.46 eV; one natu- rally–occurring isotope, Pr–141; twenty–nine artificial radioactive isotopes known in the mass range 124, 126–140 and 142–154; the longest–lived isotope Pr–143, t1/2 13.57 day, and the shortest–lived isotope Pr–124, t1/2 1.2 second. History, Occurrence, and Uses Mosander extracted from the mineral lanthana a rare earth fraction, named didymia in 1841. In 1879, Boisbaudran separated a rare earth oxide called samaria (samarium oxide) from the didymia fraction obtained from the mineral samarskite. Soon after that in 1885, Baron Auer von Welsbach iso- lated two other rare earths from didymia. He named them as praseodymia (green twin) and neodymia (new twin) after their source didymia (twin). The name praseodymium finally was assigned to this new element, derived from the two Greek words, prasios meaning green and didymos meaning twin. Praseodymium occurs in nature associated with other rare earths in a rel- atively high abundance. It is more abundant than some common metals such as silver, gold, or antimony. The average concentration of this metal in the earth’s crust is estimated to be 8.2 mg/kg.
    [Show full text]
  • The Preparation and Reactions of the Lower Chlorides and Oxychlorides of Silicon Joseph Bradley Quig Iowa State College
    Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1926 The preparation and reactions of the lower chlorides and oxychlorides of silicon Joseph Bradley Quig Iowa State College Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Quig, Joseph Bradley, "The preparation and reactions of the lower chlorides and oxychlorides of silicon " (1926). Retrospective Theses and Dissertations. 14278. https://lib.dr.iastate.edu/rtd/14278 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UlVli films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and impiroper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overiaps.
    [Show full text]
  • (12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER Et Al
    US 2016O115593A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER et al. (43) Pub. Date: Apr. 28, 2016 (54) AMINO(IODO)SILANE PRECURSORS FOR HOIL 2/3 II (2006.01) ALDACVD SILICON-CONTAINING FILM C23C I6/34 (2006.01) APPLICATIONS AND METHODS OF USING C23C I6/56 (2006.01) THE SAME (52) U.S. Cl. CPC ......... C23C 16/45553 (2013.01); C23C 16/345 (71) Applicant: American Air Liquide, Inc., Fremont, (2013.01); C23C I6/45536 (2013.01); C23C CA (US) I6/56 (2013.01); HOIL 21/31 III (2013.01); HOIL 21/02211 (2013.01); HOIL 21/02274 (72) Inventors: Glenn KUCHENBEISER, Newark, DE (2013.01); HOIL 2L/0228 (2013.01); HOIL (US); Bastien LEFEVRE, Wilmington, 21/0217 (2013.01) DE (US) (21) Appl. No.: 14/984,866 (57) ABSTRACT (22) Filed: Dec. 30, 2015 Publication Classification Disclosed are amino(iodo)silane precursors, methods of syn thesizing the same, and methods of using the same to deposit (51) Int. Cl. silicon-containing films using vapor deposition processes. C23C I6/455 (2006.01) The disclosed amino(iodo)silane precursors include SiHI(N HOIL 21/02 (2006.01) (iPr)) or SiHI(N(iBu)). Patent Application Publication Apr. 28, 2016 Sheet 1 of 6 US 2016/O115593 A1 FG Patent Application Publication Apr. 28, 2016 Sheet 2 of 6 US 2016/O115593 A1 100 T - - - - 90 - SiH(NMe2)2 atmoc 44mg 80 - - - - SiH(NMe2)2 closed cup 70 - 50 - 30 - 10 - O 1 OO 2OO 300 400 500 Temperature (°C) FIG. 3 - - SiH2(NEt2) atmoc 41 mg SiH2(NEt2) closed Cup 22mg s s cus s 9 CD 8 300 Temperature (°C) FIG.
    [Show full text]
  • Dec. 12, 1961 H
    Dec. 12, 1961 H. W. LNG 3,012,861 PRODUCTION OF SILICON Filed Jan. 15, 1960 zzzzz INVENTOR HARRY W. LING ATTORNEY 3,012,861 United States Patent Office Patented Dec. 12, 1961 1. 2 3,012,861 . Referring now to this drawing, there is shown a ver PRODUCTION OF SELICON tically disposed cylindrical or tubular reactor 1 with a Harry W. Ling, Wilmington, Del assignor to E. I. du conical bottom 3 provided with inlet 4 for entrance of Pont de Nemours and Company, Wilmington, Dei, a reactant fluidizing gas. The reactor 1 is sufficiently high corporation of Delaware to provide for a 2-3 times expansion of the bed 6 and also Filed Jan. 15, 1960, Ser. No. 3,708. a disengaging space 7 above the bed 6 to reduce solids 9. Claims. (C. 23-223.5) blowover to a minimum. A valved inlet 8 is provided for introduction of silicon bed particles. The reaction This invention relates to the production of elemental by-product gases are removed from the reactor through silicon. More particularly, it relates to a new and im 10 the outlet 9 and cyclone 13 which can be kept hot by a proved method of thermally decomposing volatile silicon furnace (not shown). These gases then pass to a con compounds. densing system 10 and cold trap (not shown) through Silicon can be produced by thermally decomposing sili which the vacuum pumping system (not shown) is con con iodide at a reduced pressure -on an electrically nected. The reactor 1 is maintained at the desired reactor heated, incandescent metal filament.
    [Show full text]
  • WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T
    (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every B01J 31/04 (2006.01) B01J 31/18 (2006.01) kind of national protection available): AE, AG, AL, AM, B01J 31/14 (2006.01) B01J 31/22 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, (21) Number: International Application DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/US20 12/065285 HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, (22) International Filing Date: KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, 15 November 2012 (15.1 1.2012) ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, (25) Filing Language: English RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, (26) Publication Language: English TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 13/323,328 12 December 201 1 (12. 12.201 1) US (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant (for all designated States except US): CHEV¬ GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, RON PHILLIPS CHEMICAL COMPANY LP UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, [US/US]; 10001 Six Pines Drive, The Woodlands, Texas TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 77380 (US).
    [Show full text]
  • Silicon Semiconductor Technology
    Runyan TEXAS INSTRUMENTS INCORPORATED Semiconductor·Components Division EXAS INSTRUMENTS INCORPORATED Silicon Semiconductor Technology W. R. Runyan Texas Instruments Electronics Series McGraw·HiII McGraw-Hili Beok Company 54276 Silicon Semiconductor Technology The Engineering Staff of Texas Instruments Incorporated • TRANSISTOR CIRCUIT DESIGN Runyan • SILICON SEMICONDUCTOR TECHNOLOGY Sevin • FIELD-EFFECT TRANSISTORS Silicon Semiconductor Technology w. R. Runyan Semiconductor Research and Development Laboratory Texas Instruments Incorporated McGRAW-HILL BOOK COMPANY New York San Francisco Toronto London Sydney SILICON SEMICONDUCTOR TECHNOLOGY Copyright © 1965 by Texas Instruments Incorporated. All Rights Reserved. Printed in the United States of America. This book, or parts thereof, may not be reproduced in any form without permission of Texas Instru­ ments Incorporated. Library of Congress Catalog Card Number 64-24607. Information contained in this book is believed to be accurate and reliable. However, responsibility is assumed neither for its use nor for any infringement of patents or rights of others which may result from its use. No license is granted by implication or otherwise under any patent or patent right of Texas Instruments or others. 54276 345678 9-MP-9 8 7 6 Preface The purposes of this book are to provide in a single reference the properties of silicon important to those who would use it as a semiconductor and to discuss at length several of the more important semiconductor technologies, such as crystal growing and diffusion. It had its beginning in a set of notes I began compiling shortly after starting work in the semiconductor industry. Since most of my activ­ ities were with silicon, these notes were restricted to information pertaining to that material.
    [Show full text]
  • N FIG. I Azawad "Wiiw4
    July 10, 1962 B, MANNING 3,043,667 PRODUCTION OF ULTRA-PURE SELICON OR GERMANIUM Filed Oct. 31, 1960 3 Sheets-Sheet N 220 eaded sao 162 o o F.G. 6 3. 1. | 6ao.4%726/24a/ s. 77%WG/ ape/a/ay1 9/4 /64 Gaa. 404A2/V FIG. I azawad "WiiW4 B%0/.-- 2.2 77(42.45 Oag A/AX-S July 10, 1962 B. MANNING 3,043,667 PRODUCTION OF ULTRA-PURE SILICON OR GERMANIUM Filed Oct. 31, 1960 3. Sheets-Sheet 2 in SS INVENTOR, ABAA/WAAA M/4///////4 2AMWAS July 10, 1962 B, MANNING 3,043,667 PRODUCTION OF ULTRA-PURE SILICON OR GERMANIUM Filed Oct. 3l, 1960 3. Sheets-Sheet 3 2 4. 8 as7 s i.\ \ INVENTOR. AtAA/VAAA) M/4//W/WG B 'cC-4- 2. 92 - . Z 775"/0231. a Maas 3,043,667 United States Patent Office Patiented July 10, 1962 2 adsorbing impurities from the tetrahalide by passing a 3,043,667 solution thereof through purified silica gel, recovering PRODUCTION OF ULTRA-PURE SELICON the tetrahalide from the solution, Zone purifying the OR GERMANUM tetrahalide by passing a mass thereof slowly past alternate Bernard Manning, Waltham, Mass, assignor to the melting and cooling zones, and reducing the tetrahalide to United States of America as represented by the Secre elemental silicon or germanium by passing hydrogen gas tary of the Air Force into a retort containing the halide heated to an elevated Filed Oct. 3, 1960, Ser. No. 66,369 temperature, said gas and halide vapor passing into a 2 Claims.
    [Show full text]
  • Signature Redacted 0'10
    A STUDY OF THE REACTION 0'10 OF HYDROGEN IODIDE WITH SILICON v193 ARY THESIS by CAROLYN H. KLEIN S.B. Simmons College, 1933. Submitted in Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE from the Massachusetts Institute of Technology 1934 Signature Redacted Signature of Author. .. .. Department of Chemistry. Date Professor in Charge of Research . Signature Redacted Chairman of Departmental Commltee on Graduate Students . Signature Rected Signature Redacted Head of Deartment . it * - Acknowledgement The author wishes to express her most sincere appreciation to Professor Walter C. Schumb for the active interest which he has at all times shown in this research, and for the many helpful suggestions which he has offered. The author should also like to extend her thanks to the many other members of the Research Laboratory of Inorganic Chemistry, for the helpful advice which they have given. N I 197618 K j\> Table of Contents Page I Previous Wiork on the Preparation of the Iodides of Silicon . .... .. 1 II Introauction .. .... ..... 3 III Preparation of Hydrogen Iodide . 4 IV Figure I. Apparatus Used in the Reaction between Silicon and HI .. ... .. 6 V The Reaction of Silicon withHI ....... 7 VI Figure II. Revised Apparatus for the Reaction of Silicon with HI . .. .10 VII General Conclusions from the Reaction between Silicon and HI ..... .... 13 VIII Reaction of Calcium Silicide with HI .. ... 14 IX Figure III. Arparatus Used for the Reaction of Calcium Silicide with HI .. 15 X Figure IV. Apparatus for Distillation of the Crude Product of the Reaction .. 19 XI The Purification of Silicon Tetra-iodide ..
    [Show full text]
  • Nitrogen Tribromide Polar Or Nonpolar
    Nitrogen tribromide polar or nonpolar Continue Nitrogen Tribromid Names IUPAC Name Nitrogen Tribromid Identifiers CAS Number 15162-90-0 3D Model (JSmol) Interactive Image ChemSpider 20480821 PubChem CID 3082084 CompTox Dashboard (EPA) DTXSID901648 In22 InChI InChIBrH.N/h3'1H;/p-3 SMILES N(Br)(Br)Br Properties Chemical Formula NBr3 Molar Mass 253.7187 g/mol Appearance Deep-red solid melting point explodes at -100 degrees Celsius, except when otherwise noted, the data is given for materials in their standard state (at 25 degrees Celsius), 100 kPa). Infobox links nitrogen tribromid is a chemical compound with the NBr3 formula. It is extremely explosive in its purest form, even at 100 degrees Celsius, and was not isolated until 1975. It's deep-red and volatile solid. The drug NBr3 was first prepared by the reaction of bistrimetligrilbramamin (bis (trimethylsil)amin bromide) with bromine monochloride (with trimethylylyl chloride as a by-product) at 87 degrees on the following equations: (Me3Si)2NBr2 BrCl → NBr3 and 2 Me3SiCl, Where Me is He instantly reacts with ammonia in a dichloromethane solution at 87 degrees Celsius to give NBrH2. Links - Lide, David R. (1998), Handbook on Chemistry and Physics (87 Ed.), Boca-Raton, Florida: CRC Press, p. 4-73, ISBN 0-8493-0594-2 Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of elements (2nd st. Butterworth-Keinmann. page 439. ISBN 978-0-08-037941-8. vteSalts and covalent derivatives of nitrid ion NH3N2H4 He (N2)11 Li3N Be3N2 BN β-C3N4g- C3N4CxNy N2 NxOy NF3 Ne Na3N Mg3 NN2 AlN Si3N4 PNP3N5 SxNySNS4N4 NCl3 Ar K3N Ca3N2 ScN VN CrNCr2N MnxNy FexNy Ni3N CuN n3N2 GaN Ge3N4 as Se NBr3 Kr Rb3 Yn Sr3N2 yn srn NbN β-Mo2N Tc Ru Rh PdN AgN CdN InN Sb Te NI3 Xe Cs3N Ba3N2 Hf3N4 TaN WN Re Os Au Hg3N2 TlN Pb BiN Po At At Rn Fr3N Ra3N2 Rf Db Sg Bh Hs Mt D rg Cn Nh Fl Mc Lv Ts Og s La CeN Pr Nd Pm Sm Eu GdN Tb Dy Er Tm Yb Lu Ac Th Pa UN Np Pu Am Cm Bk Cf Es Fm No Lr Lr Extracted from the Is NBr3 (Nitrogen Tribromid) polar or non-polar? NBr3 (Nitrogen Tribromid) is a polar I'll tell you the polar or nonpolar list below.
    [Show full text]
  • United States Patent 0 " IC€ Patented Jan
    3,299?-l7 United States Patent 0 " IC€ Patented Jan. 17, 1967 1 2 amount of a norbornadiene. As determined by infrared 3,299,017 analysis, the product obtained from this polymerization COlPOLYMlERS OF 1,3-BUTADIENE AND A NORBORNADHENE reaction is a copolymer of 1,3-butadiene and a norborna Robert P. Zelinski and Floyd E. Naylor, lliartlesville, diene in which at least 85 percent, e.g., from 85 to 98 Okla, assignors to Phillips Petroleum Company, a cor percent and higher, of the butadiene units have a cis 1,4 poration of Delaware con?guration. This novel copolymer has a greatly re No Drawing. Filed Apr. 29, 1963, Ser. No. 276,166 duced tendency to cold flow while still retaining the desir 12 ‘Claims. (Cl. 26tl—82.l) able physical properties of conventional cis-polybutadi ene. Furthermore, the copolymer of this invention pos This invention relates to novel polymers of 1,3-butadi sesses improved processing characteristics. For example, ene. In one aspect, it relates to a method for producing in the compounding of the copolymers, shorter mixing a polymer of 1,3-butadiene having a reduced tendency to times are required. This results from the fact that there cold ?ow. In another aspect, it relates to a method for is a more rapid heat buildup during mixing as compared improving the processability of polymers of 1,3-butadi to conventional cis-polybutadiene, which facilitates the ene. 15 incorporation of compounding ingredients. Further A great deal of research work has been conducted dur more, the novel copolymers have better extrusion and ing the last few years with the object of producing im milling characteristics and exhibit a considerably longer proved rubbery polymers.
    [Show full text]
  • (12) United States Patent (Lo) Patent No.: US 8,808,658 B2 Kaner Et Al
    11111111111111111111111111111111111111111111111111111111111111111111111111 (12) United States Patent (lo) Patent No.: US 8,808,658 B2 Kaner et al. (45) Date of Patent: Aug. 19, 2014 (54) RAPID SOLID-STATE METATHESIS ROUTES FOREIGN PATENT DOCUMENTS TO NANOSTRUCTURED SILICON-GERMAINUM WO W02008/034578 3/2008 WO W02008034578 Al * 3/2008 (75) Inventors: Richard B. Kaner, Pacific Palisades, CA (US); Sabah K. Bux, Chino Hills, OTHER PUBLICATIONS CA (US); Jean-Pierre Fleurial, Altadena, CA (US); Marc Rodriguez, Bux et al., "Rapid Solid State Synthesis of Nano structured Silicon," Granada Hills, CA (US) Chem. Mater., 2010, 22, 2534-2540. Published online Mar. 16, (73) Assignees: California Institute of Technology, 2010.* Pasadena, CA (US); The Regents of the Gillan et al., "Synthesis of Refractory Ceramics via Rapid Metathesis University of California, Oakland, CA Reactions between Solid-State Precursors," Chem Mater. 1996, 8, (US) 333-343.* Yang et al., "Synthesis of Alkyl-Terminated Silicon Nanoclusters by Notice: Subject to any disclaimer, the term of this a Solution Route," J. Am. Chem. Soc., 1999, 121, 5191-5195.* patent is extended or adjusted under 35 Liu et al., "A new synthetic routhe for the synthesis of hydrogen U.S.C. 154(b) by 117 days. terminated silicon nanoparticles," Materials Science and Engineer- (21) Appl. No.: 13/155,853 ing B96 (2002) 72-75.* Hick, et al., "Mechanochemical Synthesis ofAlkaline Earth Carbides (22) Filed: Jun. 8, 2011 and Intercalation Compounds," Inorg Chem., vol. 48, pp. 2333-2338 (65) Prior Publication Data (2009). US 2011/0318250 Al Dec. 29, 2011 (Continued) Related U.S. Application Data (60) Provisional application No. 61/352,499, filed on Jun.
    [Show full text]
  • Printable Version [PDF]
    C01B CPC COOPERATIVE PATENT CLASSIFICATION C CHEMISTRY; METALLURGY (NOTES omitted) CHEMISTRY C01 INORGANIC CHEMISTRY (NOTES omitted) C01B NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} NOTES 1. In this subclass, tradenames that are often found in scientific and patent literature have been used in order to define precisely the scope of the groups. 2. Attention is drawn to the definitions of groups of chemical elements following the title of section C. WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups: C01B 35/16, C01B 35/18 covered by C01B 35/00 2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. Hydrogen; Hydrides; Water; Synthesis gas from hydrocarbons 3/0026 . {of one single metal or a rare earth metal; Treatment thereof} 3/00 Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing NOTES it (separation of gases by physical means B01D); 1. In all of the groups Purification of hydrogen (production of water gas or C01B 3/0026 - C01B 3/0084, the metallic synthesis gas from solid carbonaceous material C10J; storage materials may contain minor purifying or modifying the chemical compositions quantities of non-metals such as B, C, of combustible technical gases containing carbon O, S, Se, Si; e.g. C01B 3/0036 "only monoxide C10K) containing iron and titanium" includes Fe-Ti NOTES compositions comprising non-metals 2.
    [Show full text]