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Effect of Bath Temperature on the Electrodeposition of Snse Thin
The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell. -
Electronic Structure of Designed [(Snse)1+D ]M [Tise2]
Invited Paper DOI: 10.1557/jmr.2019.128 Electronic structure of designed [(SnSe)1+d]m[TiSe2]2 heterostructure thin films with tunable layering sequence https://doi.org/10.1557/jmr.2019.128 . Fabian Göhler1 , Danielle M. Hamann2, Niels Rösch1, Susanne Wolff1, Jacob T. Logan2, Robert Fischer2, Florian Speck1, David C. Johnson2, Thomas Seyller1,a) 1Institute of Physics, Chemnitz University of Technology, D-09126 Chemnitz, Germany 2Department of Chemistry, University of Oregon, Eugene, Oregon 97401, USA a)Address all correspondence to this author. e-mail: [email protected] Received: 18 February 2019; accepted: 21 March 2019 fi m A series of [(SnSe)1+d]m[TiSe2]2 heterostructure thin lms built up from repeating units of bilayers of SnSe and two layers of TiSe2 were synthesized from designed precursors. The electronic structure of the films was https://www.cambridge.org/core/terms investigated using X-ray photoelectron spectroscopy for samples with m = 1, 2, 3, and 7 and compared to binary samples of TiSe2 and SnSe. The observed binding energies of core levels and valence bands of the heterostructures are largely independent of m. For the SnSe layers, we can observe a rigid band shift in the heterostructures compared to the binary, which can be explained by electron transfer from SnSe to TiSe2. The electronic structure of the TiSe2 layers shows a more complicated behavior, as a small shift can be observed in the valence band and Se3d spectra, but the Ti2p core level remains at a constant energy. Complementary UV photoemission spectroscopy measurements confirm a charge transfer mechanism where the SnSe layers donate electrons into empty Ti3d states at the Fermi energy. -
Pp-03-25-New Dots.Qxd 10/23/02 2:41 PM Page 778
pp-03-25-new dots.qxd 10/23/02 2:41 PM Page 778 778 PRAESODYMIUM PRAESODYMIUM [7440–10–0] Symbol Pr; atomic number 59; atomic weight 140.908; a lanthanide–series rare earth element; belongs to the cerium group of rare earths; electron con- figuration [Xe] 4f36s2; partially filled f subshell; valence states +3, +4; most 3+ stable oxidation state +3; electrode potential E°/V (aq) for Pr + 3e¯ ↔ Pr is –2.35 V; atomic radius 1.828 Å; first ionization potential 5.46 eV; one natu- rally–occurring isotope, Pr–141; twenty–nine artificial radioactive isotopes known in the mass range 124, 126–140 and 142–154; the longest–lived isotope Pr–143, t1/2 13.57 day, and the shortest–lived isotope Pr–124, t1/2 1.2 second. History, Occurrence, and Uses Mosander extracted from the mineral lanthana a rare earth fraction, named didymia in 1841. In 1879, Boisbaudran separated a rare earth oxide called samaria (samarium oxide) from the didymia fraction obtained from the mineral samarskite. Soon after that in 1885, Baron Auer von Welsbach iso- lated two other rare earths from didymia. He named them as praseodymia (green twin) and neodymia (new twin) after their source didymia (twin). The name praseodymium finally was assigned to this new element, derived from the two Greek words, prasios meaning green and didymos meaning twin. Praseodymium occurs in nature associated with other rare earths in a rel- atively high abundance. It is more abundant than some common metals such as silver, gold, or antimony. The average concentration of this metal in the earth’s crust is estimated to be 8.2 mg/kg. -
The Preparation and Reactions of the Lower Chlorides and Oxychlorides of Silicon Joseph Bradley Quig Iowa State College
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1926 The preparation and reactions of the lower chlorides and oxychlorides of silicon Joseph Bradley Quig Iowa State College Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Inorganic Chemistry Commons Recommended Citation Quig, Joseph Bradley, "The preparation and reactions of the lower chlorides and oxychlorides of silicon " (1926). Retrospective Theses and Dissertations. 14278. https://lib.dr.iastate.edu/rtd/14278 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UlVli films the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and impiroper alignment can adversely affect reproduction. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand corner and continuing from left to right in equal sections with small overiaps. -
PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS
PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS BIOSCIENCES Altered energy transfer in Phycobilisomes of the Cyanobacterium, Spirulina Platensis under 1 - 3 the influence of Chromium (III) Ayya Raju, M. and Murthy, S. D. S. PRAJNA Volume 19, 2011 Biotransformation of 11β , 17 α -dihydroxy-4-pregnene-3, 20-dione-21-o-succinate to a 4 - 7 17-ketosteroid by Pseudomonas Putida MTCC 1259 in absence of 9α -hydroxylase inhibitors Rahul Patel and Kirti Pawar Influence of nicking in combination with various plant growth substances on seed 8 - 10 germination and seedling growth of Noni (Morinda Citrifolia L.) Karnam Jaya Chandra and Dasari Daniel Gnana Sagar Quantitative analysis of aquatic Macrophytes in certain wetlands of Kachchh District, 11 - 13 Journal of Pure and Applied Sciences Gujarat J.P. Shah, Y.B. Dabgar and B.K. Jain Screening of crude root extracts of some Indian plants for their antibacterial activity 14 - 18 Purvesh B. Bharvad, Ashish R. Nayak, Naynika K. Patel and J. S. S. Mohan ________ Short Communication Heterosis for biometric characters and seed yield in parents and hybrids of rice 19 - 20 (Oryza Sativa L.) M. Prakash and B. Sunil Kumar CHEMISTRY Adsorption behavior and thermodynamics investigation of Aniline-n- 21 - 24 (p-Methoxybenzylidene) as corrosion inhibitor for Al-Mg alloy in hydrochloric acid V.A. Panchal, A.S. Patel and N.K. Shah Grafting of Butyl Acrylate onto Sodium Salt of partially Carboxymethylated Guar Gum 25 - 31 using Ceric Ions J.H. Trivedi, T.A. Bhatt and H.C. Trivedi Simultaneous equation and absorbance ratio methods for estimation of Fluoxetine 32 - 36 Hydrochloride and Olanzapine in tablet dosage form Vijaykumar K. -
Designing Isoelectronic Counterparts to Layered Group V Semiconductors
Designing isoelectronic counterparts to layered group V semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Tom´anek∗ Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA In analogy to III-V compounds, which have significantly broadened the scope of group IV semi- conductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semi- conductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. INTRODUCTION RESULTS AND DISCUSSION 2D semiconductors of group V elements, including Since all atoms in sp3 layered structures of group V el- phosphorene and arsenene, have been rapidly attract- ements are threefold coordinated, the different allotropes ing interest due to their significant fundamental band can all be topologically mapped onto the honeycomb lat- gap, large density of states near the Fermi level, and tice of graphene with 2 sites per unit cell.[11] An easy high and anisotropic carrier mobility[1{4]. Combina- way to generate IV-VI compounds that are isoelectronic tion of these properties places these systems very favor- to group V monolayers is to occupy one of these sites by ably in the group of contenders for 2D electronics ap- a group IV and the other by a group VI element. -
(12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER Et Al
US 2016O115593A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2016/0115593 A1 KUCHENBESER et al. (43) Pub. Date: Apr. 28, 2016 (54) AMINO(IODO)SILANE PRECURSORS FOR HOIL 2/3 II (2006.01) ALDACVD SILICON-CONTAINING FILM C23C I6/34 (2006.01) APPLICATIONS AND METHODS OF USING C23C I6/56 (2006.01) THE SAME (52) U.S. Cl. CPC ......... C23C 16/45553 (2013.01); C23C 16/345 (71) Applicant: American Air Liquide, Inc., Fremont, (2013.01); C23C I6/45536 (2013.01); C23C CA (US) I6/56 (2013.01); HOIL 21/31 III (2013.01); HOIL 21/02211 (2013.01); HOIL 21/02274 (72) Inventors: Glenn KUCHENBEISER, Newark, DE (2013.01); HOIL 2L/0228 (2013.01); HOIL (US); Bastien LEFEVRE, Wilmington, 21/0217 (2013.01) DE (US) (21) Appl. No.: 14/984,866 (57) ABSTRACT (22) Filed: Dec. 30, 2015 Publication Classification Disclosed are amino(iodo)silane precursors, methods of syn thesizing the same, and methods of using the same to deposit (51) Int. Cl. silicon-containing films using vapor deposition processes. C23C I6/455 (2006.01) The disclosed amino(iodo)silane precursors include SiHI(N HOIL 21/02 (2006.01) (iPr)) or SiHI(N(iBu)). Patent Application Publication Apr. 28, 2016 Sheet 1 of 6 US 2016/O115593 A1 FG Patent Application Publication Apr. 28, 2016 Sheet 2 of 6 US 2016/O115593 A1 100 T - - - - 90 - SiH(NMe2)2 atmoc 44mg 80 - - - - SiH(NMe2)2 closed cup 70 - 50 - 30 - 10 - O 1 OO 2OO 300 400 500 Temperature (°C) FIG. 3 - - SiH2(NEt2) atmoc 41 mg SiH2(NEt2) closed Cup 22mg s s cus s 9 CD 8 300 Temperature (°C) FIG. -
Dec. 12, 1961 H
Dec. 12, 1961 H. W. LNG 3,012,861 PRODUCTION OF SILICON Filed Jan. 15, 1960 zzzzz INVENTOR HARRY W. LING ATTORNEY 3,012,861 United States Patent Office Patented Dec. 12, 1961 1. 2 3,012,861 . Referring now to this drawing, there is shown a ver PRODUCTION OF SELICON tically disposed cylindrical or tubular reactor 1 with a Harry W. Ling, Wilmington, Del assignor to E. I. du conical bottom 3 provided with inlet 4 for entrance of Pont de Nemours and Company, Wilmington, Dei, a reactant fluidizing gas. The reactor 1 is sufficiently high corporation of Delaware to provide for a 2-3 times expansion of the bed 6 and also Filed Jan. 15, 1960, Ser. No. 3,708. a disengaging space 7 above the bed 6 to reduce solids 9. Claims. (C. 23-223.5) blowover to a minimum. A valved inlet 8 is provided for introduction of silicon bed particles. The reaction This invention relates to the production of elemental by-product gases are removed from the reactor through silicon. More particularly, it relates to a new and im 10 the outlet 9 and cyclone 13 which can be kept hot by a proved method of thermally decomposing volatile silicon furnace (not shown). These gases then pass to a con compounds. densing system 10 and cold trap (not shown) through Silicon can be produced by thermally decomposing sili which the vacuum pumping system (not shown) is con con iodide at a reduced pressure -on an electrically nected. The reactor 1 is maintained at the desired reactor heated, incandescent metal filament. -
WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2013/089962 Al 20 June 2013 (20.06.2013) W P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every B01J 31/04 (2006.01) B01J 31/18 (2006.01) kind of national protection available): AE, AG, AL, AM, B01J 31/14 (2006.01) B01J 31/22 (2006.01) AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, (21) Number: International Application DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, PCT/US20 12/065285 HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, (22) International Filing Date: KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, 15 November 2012 (15.1 1.2012) ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, (25) Filing Language: English RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, (26) Publication Language: English TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: 13/323,328 12 December 201 1 (12. 12.201 1) US (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (71) Applicant (for all designated States except US): CHEV¬ GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, RON PHILLIPS CHEMICAL COMPANY LP UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, [US/US]; 10001 Six Pines Drive, The Woodlands, Texas TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, 77380 (US). -
Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe. -
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´Nek*
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´nek* Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States ABSTRACT In analogy to IIIÀV compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IVÀVI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like R-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both R-SiS and β- SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. KEYWORDS: silicon sulfide . isoelectronic . phosphorene . ab initio . electronic band structure wo-dimensional semiconductors of monosulfide (SiS). We use ab initio density Tgroup V elements, including phos- functional theory (DFT) to identify stable phorene and arsenene, have been allotropes and determine their equilibrium rapidly attracting interest due to their sig- geometry and electronic structure. We have nificant fundamental band gap, large den- identified two nearly equally stable allo- sity of states near the Fermi level, and high tropes, namely, the black-phosphorus-like and anisotropic carrier mobility.1À4 Combi- R-SiS and the blue-phosphorus-like β-SiS, nation of these properties places these and show their structure in Figure 1a and d. -
Bacterial Selenoproteins: a Role in Pathogenesis and Targets for Antimicrobial Development
University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2009 Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development Sarah Rosario University of Central Florida Part of the Medical Sciences Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Rosario, Sarah, "Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development" (2009). Electronic Theses and Dissertations, 2004-2019. 3822. https://stars.library.ucf.edu/etd/3822 BACTERIAL SELENOPROTEINS: A ROLE IN PATHOGENESIS AND TARGETS FOR ANTIMICROBIAL DEVELOPMENT. by SARAH E. ROSARIO B.S. Florida State University, 2000 M.P.H. University of South Florida, 2002 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Burnett School of Biomedical Sciences in the College of Medicine at the University of Central Florida Orlando, Florida Summer Term 2009 Major Professor: William T. Self © 2009 Sarah E. Rosario ii ABSTRACT Selenoproteins are unique proteins in which selenocysteine is inserted into the polypeptide chain by highly specialized translational machinery. They exist within all three kingdoms of life. The functions of these proteins in biology are still being defined. In particular, the importance of selenoproteins in pathogenic microorganisms has received little attention. We first established that a nosocomial pathogen, Clostridium difficile, utilizes a selenoenzyme dependent pathway for energy metabolism.