process is, however, not suitable for coat- In the session on applications, several Transmission electron microscopy re- ed conductors. N. Kashima (Chubu speakers discussed the requirements of vealed several interfacial reactions in the Electric Power, Japan) reported the success- coated conductors for devices such as tape. Controlling the grain-boundary ful deposition of 100-m lengths of YBCO transmission cables, generators, motors, chemistry is also important. M. Suenaga on rolled, non-textured Ag tape using a fault current limiters, and magnetic-levita- (Brookhaven National Laboratory, USA) six-stage MOCVD system. S. Sambasivan tion systems. Coated conductors are said that as the critical currents of the (Applied Thin Films, USA) reported a attractive for these devices because of the tapes become increasingly large, the so-far method for preparing YSZ buffer layers by potential for lower cost, low ac loss, opera- neglected investigation of the cryostability the oxidation of YZN (yttria-stabilized zir- tion at a higher temperature and higher of the coated conductors will also become conium nitride) films deposited directly on critical current, and reduced component an important issue. Y. Shiohara predicted both textured Ni and Ni-Cr tapes by reac- size. Most speakers projected that a cost of the availability of long lengths of YBCO- coated conductors by 2006. He also pre- tive sputtering in N2 atmospheres. RABiTS $50/kA m has to be achieved in order for tapes of more than 10 m in length are being coated conductors to be used in electric- dicted that there would be a crossover produced at Oak Ridge and at 3M. The power device applications. Nondestruc- from BSCCO conductors to YBCO-coated presence of a sulfur c 2 × 2 superstructure tive quality control for in situ process mon- conductors later in this decade. is key to growing the oxide seed layers on itoring using Raman , Auger, The workshop was supported by Argonne National Laboratory, IGC- textured Ni/Ni-alloy substrates. S. and x-ray techniques were presented by SuperPower, Los Alamos National Labora- Sathyamurthy and T. Aytug from Oak V. Maroni (Argonne National Laboratory, tory, MicroCoating Technologies (USA), Ridge reported the development of sim- USA) and L. Heatherly (Oak Ridge) in the Oak Ridge National Laboratory, and the plified buffer architectures using lan- characterization session. Use of magneto- University of Wisconsin. thanum zirconium oxide (La2Zr2O7) and optical imaging of the Jc distribution, cou- lanthanum manganese oxide (LaMnO3). pled with reel-to-reel Ic measurements, M. PARANS PARANTHAMAN, Chair D. Peterson from Los Alamos reported will be ideal for the determination of bad AMIT GOYAL, RON FEENSTRA, the development of strontium ruthenium spots in long tapes (M. Feldmann, Uni- TERUO IZUMI, AND VENKAT oxide (SrRuO3) for IBAD-MgO substrates. versity of Wisconsin, USA). SELVAMANICKAM, Co-organizers

UPCOMING CONFERENCES

13th International Conference on Microscopy of Semiconducting Materials to be Held in Cambridge The 13th International Conference on analytical electron microscopy, advanced “SPM of GaN Surfaces”; Z. Liliental- Microscopy of Semiconducting Materials SPM and SEM applications, novel epitax- Weber (Lawrence Berkeley Laboratory, will be held at the ial layer phenomena, the properties of Berkeley), “High-Resolution Electron March 31–April 3, 2003. It will focus on the quantum nanostructures, III-nitride Microscopy of Dislocations in GaN”; latest developments in the study of the developments, GeSi/Si for advanced D.A. Muller (Lucent Technologies, structural and electrical properties of devices, metal-semiconductor contacts, Murray Hill), “Exploring the Limits of semiconductors by the application of and silicides and important effects of crit- Device Physics”; V. Raineri (National transmission and scanning electron ical device-processing treatments. Institute of Methodologies and Tech- microscopy (TEM and SEM), scanning Invited speakers include M. Albrecht nologies for Microelectronics, Catania), probe microscopy (SPM), and x-ray-based (Erlangen University) on “Transmission “Process and Device Characterization”; methods. The abstract deadline is -Cathodoluminescence F.M. Ross (IBM T.J. Watson Research December 2, 2002. Studies of III-Nitrides”; Y. Bando (Na- Center, Yorktown Heights), “Ge/Si The conference chairs are Tony Cullis tional Institute for Materials Science, Growth on Patterned Surfaces”; and E. (Sheffield University) and Paul Midgley Tsukuba), “Field-Emission Gun Trans- Zschech (AMD Saxony, Dresden), (Cambridge University). It is sponsored mission Electron Microscope Analysis of “Challenges of Failure Analysis.” by the Electron Microscopy and Analysis Nanotubes”; H. Bender (IMEC, Leuven), The conference proceedings will be Group (EMAG) of the Institute of Physics, “Developments in Silicides”; D. Bimberg published. For further details and infor- co-sponsored by The Royal Microscopical (Technical University, Berlin), “High- mation on abstract submission and regis- Society, and endorsed by the Materials Resolution Electron Microscopy and tration, access the conference Web site at Research Society. XSTM of Quantum Dots”; G.A.D. Briggs http://physics.iop.org/IOP/Confs/MSM/ Conference sessions will concentrate (Oxford University), “Nanostructures for or e-mail [email protected]. on key topics that include state-of-the-art Quantum Computing”; R.M. Feenstra studies in high-resolution imaging and (Carnegie Mellon University, Pittsburgh),

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