Surface Modification of Polytetrafluoroethylene (PTFE) with Vacuum UV Radiation from Helium Microwave Plasma to Enhance the Adhesion of Sputtered Copper Xiaolu Liao
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Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 2004 Surface modification of polytetrafluoroethylene (PTFE) with Vacuum UV radiation from helium microwave plasma to enhance the adhesion of sputtered copper Xiaolu Liao Follow this and additional works at: http://scholarworks.rit.edu/theses Recommended Citation Liao, Xiaolu, "Surface modification of polytetrafluoroethylene (PTFE) with Vacuum UV radiation from helium microwave plasma to enhance the adhesion of sputtered copper" (2004). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by the Thesis/Dissertation Collections at RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. SURFACE MODIFICATION OF POLYTETRAFLUOROETHYLENE (PTFE) WITH VACUUM UV RADIATION FROM HELIUM MICROWAVE PLASMA TO ENHANCE THE ADHESION OF SPUTTERED COPPER Xiaolu Liao Thesis SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE DEPARTMENT OF CHEMISTRY ROCHESTER INSTITUTE OF THE TECHNOLOGY ROCHESTER, NEW YORK March, 2004 SURFACE MODIFICATION OF POL YTETRAFLUOROETHYLENE (PTFE) WITH VACUUM UV RADIATION FROM HELIUM MICROWAVE PLASMA TO ENHANCE THE ADHESION OF SPUTIERED COPPER XIAOLU LlAO March,2004 Approved: Gerald A. Takacs Thesis Advisor T. C. Morrill Department Head COPYRIGHT STATEMENT Title of Thesis: SURFACE MODIFICATION OF POLYTETRAFLUOROETHYLENE (PTFE) WITH VACUUM UV RADIATION FROM HELIUM MICROWAVE PLASMA TO ENHANCE THE ADHESION OF SPUTTERED COPPER I, Xiaolu Liao, hereby grants permission to the Wallace Memorial Library, of Rochester Institute of Technology, to reproduce my thesis in whole or in part. Any reproduction will not be for commercial use or profit. in ACKNOWLEDGEMENTS I would like to thank Dr. Gerald A. Takacs for his guidance and kind support. I would like to thank my committee members (Dr. Gerald A. Takacs, Dr. Alan B. Entenberg, Dr. Massoud J. Miri, Dr. John P. Neenan) and the chemistry department for their great support. I would like to thank Dr. Entenberg of the Physics Department, RIT, for the copper deposition and instruction on the peel test and vacuum system, Dr. Kahn of the School of Photographic Arts & Science, RIT, for the use of the SEM instrument, and Mr. F. D. Egitto, and Dr. L. J. Matienzo, of Endicott Interconnect Technologies, Inc. for the XPS analysis. I appreciate the outstanding people that I worked with in the RIT Plasma Lab. They are: Zheng Sun, Hrishikesh Desai, Uger Sener and Wagner Dasilva. To my mother and my father: Thanks for the love, understanding and support you have given me. IV Table of Contents 1. INTRODUCTION 1 2. EXPERIMENTAL 10 2.1 Downstream Microwave Plasma System 10 2.1.1 Reactor Chamber and Quartz/Glass Injector Tube 11 2.1.2 Pressure Gauge 13 2.1.3 Mass Flow Controller And Gas Flow Readout Unit 13 2.1.4 Microwave Discharge 14 2.1.5 Vacuum System 14 2.1. 6 Spark Coil/ Tesla Coil 15 2.2 Surface Analysis 16 2.2.1 X-ray Photoelectron Spectroscopy 16 2.2.2 Scanning Electron Microscopy 16 2.2.3 Contact Angle Measurement 17 2.2.4 Weight Loss 19 2.3 Copper Deposition And Scotch Tape Test 19 2.3.1 Copper Deposition 19 2.3.2 Scotch Tape Test 21 2.4 Sample Preparation 22 3. RESULTS 23 3.1 Contact Angle Measurement 23 3.2 Scanning Electron Microscopy (SEM) Analysis 26 3.3 X-ray Photoelectron Spectroscopy (XPS) Analysis 29 3.4 Adhesion Results By Scotch Tape Test 31 3.5 Weight Loss Analysis 33 4. DISCUSSION 34 4.1 Contact Angle 34 4.2 Scanning Electron Microscopy (SEM) 35 4.3 X-ray Photoelectron Spectroscopy (XPS) 36 4.4 Adhesion Test 37 4.5 Weight Loss 39 5. CONCLUSION 40 SUGGESTIONS FOR FUTURE RESEARCH 42 REFERENCES 43 vi List of Tables 3.1 Contact angle (PTFE modified by helium microwave plasma) 23 3.2 Contact angle (PTFE modified by helium microwave plasma with O2 flowing over the substrate) 24 3.3 XPS analysis 29 Ar+ 3.4 Peel test on modified PTFE ( Cu deposited by assistant sputtering copper deposition system) 31 3.5 Weight loss analysis 33 vn List of Figures 1.1 Surface modification mechanism in the plasma 3 1.2 Vacuum UV radiation reaction procedures 4 1.3 Peel strengths of Cu, Al, Au, Cr and Ti deposited on PTFE, FEP and PFA film 6 1.4 Peel strength of Cu deposited on PTFE by Ar-ion(500ev) sputtering prior to the Cu deposition 7 2.1 Downstream microwave plasma system and reactor chamber 9 2.2 MW etching apparatus and reactor chamber 10 2.3 Aluminum holder and ring 11 2.4 Contact angle measurement 17 2.5 Sputtering chamber 18 2.6 Peel test 19 microwave 25 3.1 Contact angle (PTFE modified by Helium plasma) 3.2 Contact angle (PTFE modified by Helium microwave plasma with 02 flowing 25 over the substrate) 26 3.3 SEM analysis of Untreated PTFE MW plasma 27 3.4 SEM analysis of PTFE modified by 1 hr helium helium MW plasma 27 3.5 SEM analysis of PTFE modified by 2 hr MW plasma 28 3.6 SEM analysis of PTFE modified by 4 hr helium MW plasma with 3.7 SEM analysis of PTFE modified by 2 hr helium 02 Environments- -28 Vlll 3.8 XPS spectra of PTFE modified by downstream helium MW plasma with/without Q2 30 3.9 Copper film was totally peeled off from untreated PTFE surface 32 3.10 85% of the copper film was peeled off from the surface of PTFE modified by 2 hours helium MW plasma 32 3.11 85% of copper film was peeled off from the surface of PTFE modified by 4 hours helium MW plasma 32 3.12 5 % of the copper film was peeled off from the surface of PTFE modified by 2 hours helium MW plasma with oxygen 33 IX List of Abbreviations PTFE Polytetrafluoroefhylene VUV Vacuum Ultraviolet UV Ultraviolet MW Microwave He Helium IR Infrared Spectrum SEM Scanning Electron Microscopy XPS X-ray Photoelectron Spectroscopy ABSTRACT Teflon materials are well known for excellent thermal and chemical resistance properties. Their low dielectric constant makes them good materials for substrates in electronic packaging of microsystems where copper is often used as the conductor. Good adhesion between Cu and the hydrophobic PTFE is required in the microelectronics industry. A low-pressure helium MW plasma was used to modify the surface of PTFE located downstream from the plasma. Sometimes, oxygen was flowed over the surface of PTFE. Negligible photo-etching (< lnm/min) was observed. The contact angle of treated 04 PTFE film was found to decrease from an average value of 1 for untreated material to 86 an average of about and showed improved wettability with treatment time. Without modification, the adhesion of copper to PTFE was very weak. Significant improvement in adhesion occurs when PTFE is modified with VUV radiation downstream from a helium MW plasma with 02 flowing over the surface. SEM results show the modified PTFE has a rougher surface than untreated samples which provide more anchor sites to copper. XPS analysis shows defluorination and formation of oxygen-containing structures on the surface of the modified PTFE that contributes to the improved hydrophilic nature of the copper and modified PTFE. surface and stronger chemical bonding between the Trademark of E.I. Dupont De Nemours & Co., Wilmington, DE. xi 1. INTRODUCTION Teflon materials are well known for excellent thermal stability and chemical resistance. They are especially excellent insulators with low dielectric constants. The electronic package's signal transmission speed (v) is faster for lower dielectric constant Teflon (s) because v c< 1 1 4e . These properties make materials to be good potential substrates.1 Teflon polymers for microelectronic packaging However, materials have poor adhesion with metals due to low surface energy and poor wettability. Many attempts have been made to improve their adhesion to metals without changing their original excellent characteristics. Plasmas, ion beams, UV radiation, and wet chemical etching are Teflon commonly employed to alter the surface properties of materials. Modification of Teflon the surface of materials is often achieved by increasing the surface energy through the incorporation of new chemical functionalities, defluorination, oxidation, cross-linking, branching, or formation of unsaturated sites that help them bond to other materials and improve the adhesion of Teflon with metals. Several different approaches have been taken. Wet chemical etching of PTFE by sodium naphthalenide in (THF)2'3,4 ammonia5 tetrahydrofuran or sodium in liquid increase their ability to bond metals6'7 with other polymers or and results in a highly porous structure on fluoropolymer surfaces. At the same time, polymers could be partially defluorinated to a depth of 100 nm.2'3'4'5 nm to 1 000 But wet chemical etching treatment damages the bulk properties of the polymers. Etching depth on the surface is much more than by dry plasma etching and the affected layer will be markedly different from the bulk polymer. Further modification by irradiation or grafting is needed. Ar+ Treatment of samples with an ion plasma of energy 1 kV and pressure of copper.8 0.013-0.053 Pa in an oxygen environment enhance the adhesion with Downstream radiation from a helium microwave plasma [pressure of 240 Pa, microwave power of 1.0 kW, and helium flow rate of 0.25 liter/min] was found to modify the PTFE surface and cause defluorination. The MW plasma was formed in an aluminum tube trough' applicator.9 which passed through a 'double ridge plasma Ion bombardment initiates etching and leads to degradation products with small 104 molecular weight on the polymer surface; radiation from 6.7 x Pa He and Ar plasma generated by rotation Arc also contributes to ething10.