LV MOSFET Applications High Power, High Quality Discrete Class D Ampliﬁ Er

LV MOSFET applications High power, high quality discrete Class D ampliﬁ er

A range of Philips LV MOSFET devices Effi cient and cost-effective Discrete 200W UcD is specifi cally targeted at demanding, The Class D concept allows effi cient demonstration module and cost-effective high output power audio To demonstrate the UcD concept and high frequency switching applications amplifi ers to be created. The Universal Class the enabling MOSFETs, a 200W demo Class like high power Class D D (UcD) principle enables PWM amplifi ers D amplifi er board is available for Philips audio amplifi ers. to perform at an excellent sonic level customers. The demo board will require while making use of a relatively simple an external power supply, a signal source closed-loop topology. (e.g. CD player) and a loudspeaker for initial evaluation. Contact your local Philips sales UcD concept representative for additional information. Class D amplifi ers consist of at least one comparator and one power stage (see fi gure 1). Environmental aspects At the end of the power stage the PWM Compared to conventional high power high output signal is fi ltered using a second order quality amplifi ers, the UcD amplifi er consumes LC fi lter. The UcD concept (developed 20% less power at maximum output power by Philips Digital System Laboratories level. The reduction in dissipated power allows in Leuven, Belgium) includes the LC fi lter for a much smaller and lighter heatsink. in the feedback loop, thus allowing active When disposed of, the UcD amplifi er control over the fi lter behavior. This opens produces less than 50% of the waste that the door to extremely good performance a conventional amplifi er would produce. high power Class D audio amplifi ers. As such, an amplifi er designed according to the UcD concept is fully compliant with Enabling MOSFETs modern trends in sustainability. In this light, MOSFETs that are especially targeted the amplifi er together with its enabling at this application are a prerequisite for semiconductor components have been proper operation. Key features of these awarded Philips “Green Flagship” status. MOSFETs include:

• low QGD and Ciss UcD Patent

• low body diode Qrr and trr The UcD principle has been patented

• low RDS(on) by Philips. The right to use the patent is granted royalty-free to third parties who use enabling semiconductor components from Philips in their UcD ampliﬁ ers. For more details consult your Philips sales representative. Product overview

Package VDS RDS(on) Qrr QGD Ciss typical Class D ampliﬁer @ V =10V SOT 186A SOT78 (V) GS (typ) (typ) (typ) supply Pout Speaker (m ) (TO220F) (TO220) Ω (nC) (nC) (pF) voltage theoretical Imp. (Ω) (W) PHX34NQ11T 110 40 240 18 1,700 +/- 45V 500 2 PHX27NQ11T 110 50 160 12 1,240 +/- 45V 400 2.5 PHX23NQ11T 110 70 120 10 830 +/- 45V 300 3 PHX18NQ11T PHP18NQ11T 110 90 135 8 635 +/- 45V 250 4 PHP28NQ15T 150 63 170 8 1,250 +/- 70V 600 4

200W demo ampliﬁer speciﬁcations

Property Condition Value Output power Supply voltage = ± 45V 200W (RMS)

Rload = 4Ω

Efﬁciency Pout = 100W ≥ 92%

Rload = 4Ω

THD + N Pout = 10W ≤ 0.03% 20Hz < f < 20kHz SNR ≥ 120dB

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Fig.1 UcD principle diagram Fig. 2 Basic discrete UcD implementation

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Date of release: March 2006 Document order number: 9397 750 15527 Printed in the Netherlands