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20 V Dual N-Channel Power MOSFET with Industry-Low RDS(ON) in 2 Mm by 2 Mm Footprint Area

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20 V Dual N-Channel Power MOSFET with Industry-Low RDS(ON) in 2 Mm by 2 Mm Footprint Area Product Group: Vishay Siliconix, MOSFETs / March 2014 Author: Kim Norton Tel: 1 408-970-5300 E-mail: [email protected] 20 V Dual N-Channel Power MOSFET With Industry-Low RDS(ON) in 2 mm by 2 mm Footprint Area Vishay Intertechnology, Inc. (NYSE: VSH) introduces a new dual n-channel TrenchFET® power MOSFET in the ultra-compact, thermally enhanced PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features the industry's lowest on-resistance for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area. Product Benefits: • Low on-resistance of 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V) • Promotes more efficient use of power and longer battery run times • Reduces voltage drop at peak load current to prevent false triggering of under-voltage lock-out • Built-in ESD protection of 2000 V • Integrates two MOSFETs in one compact PowerPAK SC-70 package to save PCB space • Thermally enhanced package with a small footprint of 2.05 x 2.05 mm² • 100 % Rg tested • Halogen-free according to the JEDEC JS709A definition • Compliant to RoHS Directive 2011/65/EU The Key Specifications: • Drain-source voltage: 20 V • Gate-source voltage: ± 12 V • On-resistance: • 34 mΩ max at 4.5 V • 37 mΩ max at 3.7 V • 45 mΩ max at 2.5 V Product Group: Vishay Siliconix, MOSFETs / March 2014 Market Applications: • Load and charger switches, DC/DC converters, H-bridges, and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless DC motors Diagrams of Popular Applications for SiA936EDJ: Load / Static switch DC-DC power stage Compact size Small footprint for limited PCB real estate Achieves low voltage drop with DC and Integrated solution reduces component pulse load current count The Perspective: For ultraportables, mobile computing devices, consumer electronics, and portable healthcare products, the SiA936EDJ combines extremely low on-resistance with built-in ESD protection of 2000 V in one compact device. Its on-resistance at 2.5 V is 11.7 % lower than the closest competing 8 V VGS device — while providing higher (G-S) guard band — and 15.1 % lower than the closest competing device with a 12 V VGS. These low on-resistance values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In addition, by integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space. Availability: Samples and production quantities of the SiA936EDJ are available now, with lead times of 12 to 14 weeks for larger orders. To access the product datasheet on the Vishay Web site, go to http://www.vishay.com/doc?62929 (SiA936EDJ) Contact: The Americas Europe Asia Vishay Americas Vishay Electronic GmbH Vishay Intertechnology Asia Pte Ltd. [email protected] [email protected] [email protected] .
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