Renesas Automotive www.renesas.com 2011.10 Introduction Renesas "Green" Automotive Initiative Automotive Leading the World with a Wide-Ranging Product Lineup I Application Systems I Renesas Products I Renesas Constituent Technologies HEV/EV 15 Car Instrumentation 36 I Renesas Automotive Products Selection Guide I Renesas Development Environments Analog and Power Devices 03 Security Solutions 09 Powertrain 19 Car Audio 39 Analog and Power Device Products 65 Contents AUTOSAR Solutions Optimized for Renesas MCUs 53 RL78 Family of New Affordable MCUs 05 Functional Safety Solutions 11 Chassis & Safety 24 Car Information System 41 Analog Master (Semi-Custom)/Mixed Signal ASIC (Fully Custom) Products 75 Development Environments from Renesas Partner 55 SoC R-Car Series for In-Vehicle Terminals 07 AUTOSAR Solutions 13 Advanced Driver Assistance System 28 In-Vehicle Networking 47 SoC Products for In-Vehicle Information Terminals 75 Body 31 Analog & Power Devices 49 01 02 Renesas Products Renesas Analog and Power Devices Automotive Automotive Power Devices Combining Low-Voltage Power MOSFETs with Ultralow On-Resistance ECO Renesas is the world’s No. 1 supplier of Comparison with TO-263-7 (40V) Energy Efficiency and Compactness Process Name low-voltage MOSFETs, offering a broad Pch A N L 1 Series No. 312 lineup of attractive products. Through Low Voltage Tolerance 7th Generation Channel the use of a fabrication process Four Technologies That Contribute to “Green Cars” 8th Generation For Automotive Applications 171 –30V to 100V 1.2mohm employing an all-new optimized trench UMOS4 260nC 0.9mohm APL1 Nch –30V to 60V 190nC configuration, we are developing Reduced Qg Developing process Concept Stage Ron X Qg (mohm nC) I Performance Switching low-on-resistance products capable of Ultralow on-resistance technology for highly efficient low-voltage power MOSFETs UMOS4 & –30V to 60V Next-Generation 8th Generation SJ1 & P-ch large-current drive under the I 9th Generation 1.0 Top-level low Vce(sat) and high-speed switching technology for IGBTs with low loss, high voltage tolerance, and large current capacity 30V to 60V 0.74 high-temperature conditions of 40V to 75V ANL2 Normalized On-Resistance Normalized automotive applications. Products I Concept Stage Power Loss Power Intelligent thermal FETs and IPDs with on-chip protection functions 40V to 60V Next-Generation (UMOS4 = 1.0) employing the new ANL2 process N-ch I Package technology enabling composite multi-chip products, low resistance, excellent heat dispersion, and improved performance UMOS4 ANL2 achieve power consumption 2006 2008 2010 2012 2013 Assumption: On Loss 70% / SW Loss 30% approximately 25% less than products Renesas contributes to the realization of environmentally friendly “green cars” by supplying compact and lightweight power devices based on the UMOS4 process. that employ these four technologies to deliver high efficiency and low loss for better fuel efficiency. Large-Current IGBTs Employing Process Optimization ECO for Low Loss and High Voltage Tolerance Insulated-gate bipolar transistors (IGBTs) are used in applications such as AE2 600V, Trench Configuration Same Switching Performance motor drive in hybrid and electric LiPT* vehicles. These devices employ an High Efficiency Low Loss Intelligent Functions (6th Generation) optimized high-performance process to AE3 IGBT deliver low Vce(sat) and high-speed Miniaturized LiPT (7th Generation) Inverter block switching characteristics among the Process Under Development best in the industry, for more Concept Stage comfortable drive and longer effective MCU Pre- running distance. Renesas IGBTs can be Powertrain • Chassis • Hybrid Body Control AE4 Driver New Configuration HEV used with high-quality bare-die devices, Normalized VCE (sat) CharacteristicsVCE (sat) Normalized Main Motor high-performance FWDs* used for Ultralow On-Resistance, High Voltage Tolerance, *: Low injection Punch Through Self-Diagnostics, Control regeneration, and isolating High Speed Large Current Handling 2008 2010 2012 2014 photocouplers. 1 2 3 Power MOSFET * IGBT * Thermal FET/IPD * * FWD: Free Wheeling Diode Technology Technology Technology Intelligent Thermal FETs and IPDs System Cost The Renesas lineup of thermal FETs, which have on-chip overheating protection functionality and can easily substitute for power MOSFETs, and IPDs for body applications, which combine high tolerance, high reliability, and proven load short reliability, will continue to be extended moving forward in Package Technology response to demand for improved system reliability. In future we will offer an even broader range of solutions, and products are currently under Enabling Composite Products, Low Resistance, Excellent Heat Dispersion development for applications such as LED headlight controllers, lithium-ion battery monitors, and three-phase motor pre-drivers. *1 MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor *2 IGBT: Insulated Gate Bipolar Transceiver Better *3 IPD: Intelligent Power Devices F-IPD F-IPD Functionality (Pre-Driver IPD) (+ Low-On-Resistance MOSFET) (LED Driver Control IPD) (+ MOSFET) Motor Control Medium and Large Current Body [Headlights] Overheating Cutoff [up to Over-100A Class] B-IPD PWM Control Chassis, Powertrain High-Performance, High-Quality Solutions Added On-Chip Functions Such as Power Supply Diagnostics Medium-Current Multi-Chip Type [30A Class] Body, Motor [30A Class] PWM Control + Protection Function EPS*1, ABS*2 Starter Generator Drain Current (A) Large-Current Multi-Chip Type Up to Medium-Current Multi-Channel Products 100 Power MOSFET Mechanical Relay Replacement [80A Class] Body [Single/Dual/Quad] 3 Overheating Cutoff HVAC* , Wiper Ultralow On-Resistance + Protection Function High Mounting Efficiency and Extensive Lineup Current Detection 10 Engine Diagnostics Door mirror Thermal FETs 1 40 60 100 400 600 1200 Medium- and Large-Current Monolithic Type Drain-Source Voltage (V) Lamps, Powertrain [up to 50A Class] HEV, EV*4 Strictly Selected Functions, On-Chip Overheating Cutoff “Overheating Cutoff” Protection Function 100 IGBT (Self-Protection) 10 1 2 5 10 20 50 100 Lower On-Resistance RDS (on) (mΩ) 1 40 60 100 400 600 1200 Package Technology Enabling Composite Products, 100 Thermal FET/IPD Body control 10 Junction box Lower On-Resistance, and Better Heat Dispersion (valve driver) Renesas is developing package technology employing thicker aluminum wiring and higher line counts to help reduce on-resistance, alongside efforts to 1 reduce the on-resistance of power MOS chips. We are also developing and implementing multi-chip package technology for use with products such as 40 60 100 400 600 1200 IPDs for large-current applications and motor drive ICs. High-pin-count power packages providing excellent heat dispersion and support for multi-functionality are under development as well. *1 EPS: Electric Power Steering *2 ABS: Antilock Brake System *3 HVAC: Heating Ventilation Air Conditioning *4 HEV: Hybrid Electric Vehicle, EV: Electric Vehicle 03 04 Renesas Products Renesas RL78 Family of New Affordable MCUs Automotive RL78 Low-Power MCUs for Contributing to System Dependability Safety Automotive Applications with Many Safety Functions Advanced Specs Drawing on the Legacies of the 78K and R8C Flash CPU SFRs Access by illegal instructions or illegal Improper operation can be prevented by A CRC function enables verification of the access to restricted areas of memory can a function that restricts writes to special I contents of the flash ROM. be detected (and trigger a reset). The WDT Combines low power consumption and high performance, contributing to reduced power consumption for the system overall. can be used to detect program runaway function registers (SFRs). I Varied product lineup (and reset the device). I Helps customers achieve reduced system cost and more compact size. I Full complement of safety functions RAM Clocks ADC I It is possible to verify Inherits the excellent technology of the 78K and R8C families, allowing effective utilization of existing software resources. Parity checking enables verification that It is possible to confirm that the CPU is + side reference voltage the operation of the the correct values are being read and operating at the correct frequency by – side reference voltage ADC by measuring written. It is also possible to restrict writes using the 15kHz on-chip oscillator to Internal reference voltage these voltages. CAN/LIN, high pin count, Product Evolution to specified areas of memory. measure the main clock frequency. improved functions, 150°C support ASSP Evolution RL78/F1x RL78/xxx Lineup of First Group of 32 Products Fusion Evolution RL78/xxx : RAM Size Pin RL78/xxx 20 30 32 48 64 RL78/F12 ROM LIN, low pin count of 20 pins and up, 64KB 4 4 4 4 4 4 1.8V operation, 150°C support 48KB 3 3 3 3 3 3 32KB 2 2 2 2 2 2 Current Consumption Among the World’s Lowest ECO 24KB 1.5 1.5 1.5 1.5 1.5 for More Eco-Friendly Systems 16KB 1 1 1 1 1 CPU operates only when necessary. Current Consumption* Comparison Equipped with low-power (SNOOZE) mode. 8KB 0.5 mA/MHz 0.7 MAIN RUN SSOP SSOP QFN QFN QFP QFP CPU (300mil) (300mil) (5x5) (7x7) (7x7) (10x10) 0.6 Clocks Package Peripheral Functions 0.5 HALT SNOOZE 0.4 A/D Converter, CPU CPU Lower Power Consumption 0.3 Serial Data Receiver, Clocks Clocks Than HALT Mode Multiplier-Divider/MAC, A/D Converter, Serial Data Peripheral Functions Peripheral Functions DMA Operation Support Receiver Support 0.2 STOP I Target Applications 0.1 CPU Stopped Clocks Ideal as general MCUs for body systems, powertrain