Design and Performance of a Broadband Microwave Active Inductor Circuit with an Application to Amplifier Design Charles Forrest Campbell Iowa State University

Total Page:16

File Type:pdf, Size:1020Kb

Design and Performance of a Broadband Microwave Active Inductor Circuit with an Application to Amplifier Design Charles Forrest Campbell Iowa State University Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1991 Design and performance of a broadband microwave active inductor circuit with an application to amplifier design Charles Forrest Campbell Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Electrical and Electronics Commons, and the Electromagnetics and Photonics Commons Recommended Citation Campbell, Charles Forrest, "Design and performance of a broadband microwave active inductor circuit with an application to amplifier design" (1991). Retrospective Theses and Dissertations. 16684. https://lib.dr.iastate.edu/rtd/16684 This Thesis is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. Design and performance of a broadband microwave active inductor circuit with an application to amplifier design by Charles Forrest Campbell A Thesis Submitted to the Graduate Faculty in Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE Depar tmen t : Electrical Engineering and Computer Engineering Major: Electrical Engineering Signatures have been redacted for privacy Iowa State University Ames, Iowa 1991 ii TABLE OF CONTENTS Page ABSTRACT iv CHAPTER 1. INTRODUCTION 1 Statement of Problem 1 Review of Past York 1 CHAPTER 2. ACTIVE INDUCTOR SYNTHESIS 3 Inductance Simulation with Gyrators 3 Gyrator Approximation using BJTs 5 Synthesis of the Feedback Network 9 CHAPTER 3. ACTIVE INDUCTOR ANALYSIS 15 S-parameter Analysis 15 Simplified Hybrid-n Model Analysis 24 CHAPTER 4. ACTIVE INDUCTOR MICROSTRIP CIRCUIT DESIGN 33 Device Characterization 33 S-parameter and Hybrid-n Simulations 38 Effect of Distributed Elements 42 Transistor Biasing Networks 43 CAD Layout and Analysis 47 CHAPTER 5. ACTIVE INDUCTOR PERFORMANCE 51 Experimental Data 51 Tunability 60 Comparison with Spiral Inductors 65 Power Handling Capability 71 iii Page CHAPTER 6. APPLICATION TO NARROYBAND AMPLIFIER DESIGN 74 Amplifier Circuit Design 74 CAD Layout and Analysis 80 Experimental Data 80 CHAPTER 7. SUMMARY AND RECOMMENDATIONS 87 BIBLIOGRAPHY 89 ACKNOYLEDGEMENTS 91 APPENDIX A: MOTOROLA MRF901 DATA 92 MRF901 Data Sheet 92 Packaging Information 93 Data Sheet S-parameters 94 APPENDIX B: LIBRA SIMULATION FILES 96 Microstrip Active Inductor Simulation 96 Rectangular Spiral Inductor Simulation 97 Microstrip Narrowband Amplifier Simulation 97 iv ABSTRACT The synthesis, analysis and fabrication of a broadband microwave active inductor circuit utilizing BJTs has been presented and applied in a narrowband amplifier design. The circuit realizes inductance by impedance gyration using a CC-CE pair with the parasitic capacitance between the base and emitter of the CE transistor as the load. A feedback network consisting of two parallel RC networks in series is used to produce a flat inductance versus frequency response by compensating for the n-model elements of the transistors. Hybrid-n and S-parameter simulations of the circuit predict a maximum bandwidth of about f~/2. Microstrip circuits were fabricated employing Motorola MRF901 BJTs which have a f~ of about 4.5GHz. The fabricated circuits produced flat inductance responses for inductance values and resonant frequencies of 7nH to 29nH and 670MHz to 1050MHz respectively. The maximum measured quality factors for the flat inductance responses ranged from 1.1 to 2.0, however, the circuit was tuned for a quality factor as high as 8.5. A 500MHz narrowband amplifier was designed employing the active inductor circuits in the impedance matching networks. The microstrip realization of the amplifier produced a measured transducer gain of 18.8dB and a 1dB fractional bandwidth of 21.6%. 1 CHAPTER 1. INTRODUCTION Statement of Problem In the design of microwave amplifiers, lumped element networks are often required to obtain an impedance match between the source and the load or to improve the bandwidth of the circuit. The realization of lumped element networks on monolithic microwave integrated circuits (MMICs) is often accomplished with capacitors and spiral inductors. Unfortunately, spiral inductors require large amounts of substrate area and air bridges; they have limited bandwidth, high series resistance, and crosstalk problems. Spiral inductors have also proven to be quite difficult to model accurately. One possible solution to this problem is to realize inductance with an active circuit and avoid the use of spiral inductors altogether. The objective of this thesis is to investigate the design and performance of microwave frequency active inductor circuits utilizing bipolar junction transistors (BJTs) and to demonstrate an application to narrowband amplifier design. Review of Past Vork Inductance has been synthesized extensively with active devices in the audio frequency range with the use of generalized immittance converters (GICs), which can be readily realized with operational amplifiers or operational transconductance amplifiers [1,2]. However, at microwave frequencies these circuits normally can no longer be used, and other methods of inductance realization must be employed. The use of 2 active shunt peaking to increase the bandwidth of VHF amplifiers has been accomplished by Choma and others by exploiting the inductive output impedance of a common collector transistor [3,4,5]. The most recent published advance in the realization of microwave frequency active inductor circuits is by Hara et al. [6,7]. These circuits employ GaAs field effect transistors (FETs), and they have been demonstrated to have performance superior to that of spiral inductors. The first of these circuits uses a common source-common gate cascode and a feedback resistor to produce inductance in the microwave frequency range. The inductance value is set by the feedback resistor and the series resistance of the realized inductor is approximately equal to I/gm. The other circuit designs realize near loss less (Rs~20Q) inductors by employing a FET in a negative resistance configuration as the feedback element. The inductance realized by these circuits is not as independent of frequency as the other design and the possibility of the circuit becoming unstable is much greater. In all cases, for the circuits to be broadband, the FETs must be identical and under the same bias. 3 CHAPTER 2. ACTIVE INDUCTOR SYNTHESIS Inductance Simulation with Gyrators In the design of active filters, the simulation of grounded inductors is often accomplished with a gyrator loaded with a capacitor. A gyrator is a two port device with a z-parameter matrix (2.1) where r is the gyration resistance [1]. Many circuit realizations of gyrators are available in the literature and one such circuit is shown in Fig. 2-1 [8J. This circuit can be shown to have gyrator action by relating the terminal currents to the terminal voltages. (2.2a) (2.2b) Writing these in the form of Eq. (2.1) 0 -l/g 1[ 11 1 [ (2.3) l/g 0 12 the gyration resistance is seen to be equal to 1/g. When this ideal gyrator circuit is loaded with a capacitor, as in Fig. 2-2, the impedance looking into port 1 is given by Eq. (2.4), and the circuit simulates a grounded inductor of value L=C/g2 • The gyrator approach will be the technique used to realize an active inductor in this investigation. 4 Figure 2-1. Ideal gyrator realization + + c Figure 2-2. Ideal active inductor circuit 5 Z12 Z21 ------- = sC/g2 sL (2.4) Gyrator Approximation using BJTs In order to approximate gyrator action with transistors, a circuit model which approximates the frequency response of a transistor needs to be employed. The gyrator realization of Fig. 2-2 consists of two voltage controlled current sources, one oriented so that the current leaves the common node, the other so that it enters the common node. Therefore, the simplified hybrid n-model [91 illustrated in Fig. 2-3 would be convenient to use because it also contains voltage controlled current sources. B c + ~ E Figure 2-3. Simplified hybrid-n model of BJT The circuit and model for the connection of a common collector transistor driving a common emitter transistor are shown in Fig. 2-4. A comparison of this circuit with the ideal active inductor circuit in 6 (a) Common collector BJT driving common emitter BJT (b) Equivalent circuit model Figure 2-4. Gyrator approximation using BJTs 7 Fig. 2-2 reveals that the desired current source orientation and load capacitor required for inductance simulation are realized. In order to examine the effect of a resistor in parallel with the load capacitor for the ideal active inductor circuit, apply Eq. (2.4). (2.5) Therefore, as a consequence of Rn2' the realized active inductor will have series resistance no matter how nearly the actual gyrator is approximated. Unfortunately, the remaining circuit elements for the model are not included in the active inductor circuit of Fig. 2-2. The voltage driving the current source associated with the common collector transistor is not across pprt 1 and is effectively disconnected. Therefore, a feedback network must be designed that would complete the connection from port 1 to the input of the common collector transistor and compensate somewhat for the additional circuit elements in the model. The circuit in Fig. 2-4 is repeated in Fig. 2-5 with the proposed feedback network connecting port 1 to the input of the common collector transistor. Nodal equations for the network are (2.6a) (2.6b) (2.6c) 8 (a) Gyrator approximation with feedback 1---7 (b) Equivalent circuit model Figure 2-5. Proposed active inductor circuit 9 where the impedances Zl and Z2 are defined as follows: R~ (2.7a) R~ Z2 (2.7b) Solving Eq. (2.6) for the voltages Vnl and Vn2 , (2.8a) VZ2(l + Zlgl) Vn2 = -------------------- (2.8b) Zf + Z2 + Zl(l + Z2gl) and substituting Eq.
Recommended publications
  • Selecting the Optimal Inductor for Power Converter Applications
    Selecting the Optimal Inductor for Power Converter Applications BACKGROUND SDR Series Power Inductors Today’s electronic devices have become increasingly power hungry and are operating at SMD Non-shielded higher switching frequencies, starving for speed and shrinking in size as never before. Inductors are a fundamental element in the voltage regulator topology, and virtually every circuit that regulates power in automobiles, industrial and consumer electronics, SRN Series Power Inductors and DC-DC converters requires an inductor. Conventional inductor technology has SMD Semi-shielded been falling behind in meeting the high performance demand of these advanced electronic devices. As a result, Bourns has developed several inductor models with rated DC current up to 60 A to meet the challenges of the market. SRP Series Power Inductors SMD High Current, Shielded Especially given the myriad of choices for inductors currently available, properly selecting an inductor for a power converter is not always a simple task for designers of next-generation applications. Beginning with the basic physics behind inductor SRR Series Power Inductors operations, a designer must determine the ideal inductor based on radiation, current SMD Shielded rating, core material, core loss, temperature, and saturation current. This white paper will outline these considerations and provide examples that illustrate the role SRU Series Power Inductors each of these factors plays in choosing the best inductor for a circuit. The paper also SMD Shielded will describe the options available for various applications with special emphasis on new cutting edge inductor product trends from Bourns that offer advantages in performance, size, and ease of design modification.
    [Show full text]
  • Capacitors and Inductors
    DC Principles Study Unit Capacitors and Inductors By Robert Cecci In this text, you’ll learn about how capacitors and inductors operate in DC circuits. As an industrial electrician or elec- tronics technician, you’ll be likely to encounter capacitors and inductors in your everyday work. Capacitors and induc- tors are used in many types of industrial power supplies, Preview Preview motor drive systems, and on most industrial electronics printed circuit boards. When you complete this study unit, you’ll be able to • Explain how a capacitor holds a charge • Describe common types of capacitors • Identify capacitor ratings • Calculate the total capacitance of a circuit containing capacitors connected in series or in parallel • Calculate the time constant of a resistance-capacitance (RC) circuit • Explain how inductors are constructed and describe their rating system • Describe how an inductor can regulate the flow of cur- rent in a DC circuit • Calculate the total inductance of a circuit containing inductors connected in series or parallel • Calculate the time constant of a resistance-inductance (RL) circuit Electronics Workbench is a registered trademark, property of Interactive Image Technologies Ltd. and used with permission. You’ll see the symbol shown above at several locations throughout this study unit. This symbol is the logo of Electronics Workbench, a computer-simulated electronics laboratory. The appearance of this symbol in the text mar- gin signals that there’s an Electronics Workbench lab experiment associated with that section of the text. If your program includes Elec tronics Workbench as a part of your iii learning experience, you’ll receive an experiment lab book that describes your Electronics Workbench assignments.
    [Show full text]
  • Class D Audio Amplifier Application Note with Ferroxcube Gapped Toroid Output Filter
    Class D audio amplifier Application Note with Ferroxcube gapped toroid output filter Class D audio amplifier with Ferroxcube gapped toroid output filter The concept of a Class D amplifier has input signal shape but with larger bridge configuration. Each topology been around for a long time, however amplitude. And audio amplifier is spe- has pros and cons. In brief, a half bridge only fairly recently have they become cially design for reproducing audio fre- is potentially simpler,while a full bridge commonly used in consumer applica- quencies. is better in audio performance.The full tions. Due to improvements in the bridge topology requires two half- speed, power capacity and efficiency of Amplifier circuits are classified as A, B, bridge amplifiers, and thus more com- modern semiconductor devices, appli- AB and C for analog designs, and class ponents. cations using Class D amplifiers have D and E for switching devices. For the become affordable for the common analog classes, each type defines which A Class D amplifier works in the same person.The mainly benefit of this kind proportion of the input signal cycle is way as a PWM power supply, except of amplifier is the efficiency, the theo- used to switch on the amplifying device: that the reference signal is the audio retical maximum efficiency of a class D Class A 100% wave instead of the accurate voltage design is 100%, and over 90% is Class AB Between 50% and 100% reference. achieve in practice. Class B 50% Class C less than 50% Let’s start with an assumption that the Other benefits of these amplifiers are input signal is a standard audio line level the reduction in consumption, their The letter D used to designate the class signal.This audio line level signal is sinu- smaller size and the lower weight.
    [Show full text]
  • Effect of Source Inductance on MOSFET Rise and Fall Times
    Effect of Source Inductance on MOSFET Rise and Fall Times Alan Elbanhawy Power industry consultant, email: [email protected] Abstract The need for advanced MOSFETs for DC-DC converters applications is growing as is the push for applications miniaturization going hand in hand with increased power consumption. These advanced new designs should theoretically translate into doubling the average switching frequency of the commercially available MOSFETs while maintaining the same high or even higher efficiency. MOSFETs packaged in SO8, DPAK, D2PAK and IPAK have source inductance between 1.5 nH to 7 nH (nanoHenry) depending on the specific package, in addition to between 5 and 10 nH of printed circuit board (PCB) trace inductance. In a synchronous buck converter, laboratory tests and simulation show that during the turn on and off of the high side MOSFET the source inductance will develop a negative voltage across it, forcing the MOSFET to continue to conduct even after the gate has been fully switched off. In this paper we will show that this has the following effects: • The drain current rise and fall times are proportional to the total source inductance (package lead + PCB trace) • The rise and fall times arealso proportional to the magnitude of the drain current, making the switching losses nonlinearly proportional to the drain current and not linearly proportional as has been the common wisdom • It follows from the above two points that the current switch on/off is predominantly controlled by the traditional package's parasitic
    [Show full text]
  • How to Select a Proper Inductor for Low Power Boost Converter
    Application Report SLVA797–June 2016 How to Select a Proper Inductor for Low Power Boost Converter Jasper Li ............................................................................................. Boost Converter Solution / ALPS 1 Introduction Traditionally, the inductor value of a boost converter is selected through the inductor current ripple. The average input current IL(DC_MAX) of the inductor is calculated using Equation 1. Then the inductance can be [1-2] calculated using Equation 2. It is suggested that the ∆IL(P-P) should be 20%~40% of IL(DC_MAX) . V x I = OUT OUT(MAX) IL(DC_MAX) VIN(TYP) x η (1) Where: • VOUT: output voltage of the boost converter. • IOUT(MAX): the maximum output current. • VIN(TYP): typical input voltage. • ƞ: the efficiency of the boost converter. V x() V+ V - V L = IN OUT D IN ΔIL(PP)- xf SW x() V OUT+ V D (2) Where: • ƒSW: the switching frequency of the boost converter. • VD: Forward voltage of the rectify diode or the synchronous MOSFET in on-state. However, the suggestion of the 20%~40% current ripple ratio does not take in account the package size of inductor. At the small output current condition, following the suggestion may result in large inductor that is not applicable in a real circuit. Actually, the suggestion is only the start-point or reference for an inductor selection. It is not the only factor, or even not an important factor to determine the inductance in the low power application of a boost converter. Taking TPS61046 as an example, this application note proposes a process to select an inductor in the low power application.
    [Show full text]
  • TSEK03: Radio Frequency Integrated Circuits (RFIC) Lecture 7: Passive
    TSEK03: Radio Frequency Integrated Circuits (RFIC) Lecture 7: Passive Devices Ted Johansson, EKS, ISY [email protected] "2 Overview • Razavi: Chapter 7 7.1 General considerations 7.2 Inductors 7.3 Transformers 7.4 Transmission lines 7.5 Varactors 7.6 Constant capacitors TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "3 7.1 General considerations • Reduction of off-chip components => Reduction of system cost. Integration is good! • On-chip inductors: • With inductive loads (b), we can obtain higher operating frequency and better operation at low supply voltages. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "4 Bond wires = good inductors • High quality • Hard to model • The bond wires and package pins connecting chip to outside world may experience significant coupling, creating crosstalk between parts of a transceiver. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "5 7.2 Inductors • Typically realized as metal spirals. • Larger inductance than a straight wire. • Spiral is implemented on top metal layer to minimize parasitic resistance and capacitance. TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "6 • A two dimensional square spiral inductor is fully specified by the following four quantities: • Outer dimension, Dout • Line width, W • Line spacing, S • Number of turns, N • The inductance primarily depends on the number of turns and the diameter of each turn TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "7 Magnetic Coupling Factor TSEK03 Integrated Radio Frequency Circuits 2019/Ted Johansson "8 Inductor Structures in RFICs • Various inductor geometries shown below are result of improving the trade-offs in inductor design, specifically those between (a) quality factor and the capacitance, (b) inductance and the dimensions.
    [Show full text]
  • AN826 Crystal Oscillator Basics and Crystal Selection for Rfpic™ And
    AN826 Crystal Oscillator Basics and Crystal Selection for rfPICTM and PICmicro® Devices • What temperature stability is needed? Author: Steven Bible Microchip Technology Inc. • What temperature range will be required? • Which enclosure (holder) do you desire? INTRODUCTION • What load capacitance (CL) do you require? • What shunt capacitance (C ) do you require? Oscillators are an important component of radio fre- 0 quency (RF) and digital devices. Today, product design • Is pullability required? engineers often do not find themselves designing oscil- • What motional capacitance (C1) do you require? lators because the oscillator circuitry is provided on the • What Equivalent Series Resistance (ESR) is device. However, the circuitry is not complete. Selec- required? tion of the crystal and external capacitors have been • What drive level is required? left to the product design engineer. If the incorrect crys- To the uninitiated, these are overwhelming questions. tal and external capacitors are selected, it can lead to a What effect do these specifications have on the opera- product that does not operate properly, fails prema- tion of the oscillator? What do they mean? It becomes turely, or will not operate over the intended temperature apparent to the product design engineer that the only range. For product success it is important that the way to answer these questions is to understand how an designer understand how an oscillator operates in oscillator works. order to select the correct crystal. This Application Note will not make you into an oscilla- Selection of a crystal appears deceivingly simple. Take tor designer. It will only explain the operation of an for example the case of a microcontroller.
    [Show full text]
  • Inductor Selection Guide for 2.1 Mhz Class-D Amplifiers (Rev. A)
    Application Report SLOA242A–June 2017–Revised September 2019 Inductor Selection Guide for 2.1 MHz Class-D Amplifiers Gregg Scott ............................................................................................... Mid-Power Audio Amplifiers ABSTRACT All automotive Class-D audio amplifier designs require a filter on the output of the amplifier to remove the fundamental switching frequency. New technologies, like the 2.1-MHz high switching frequency used on TI’s latest automotive Class-D audio amplifiers, drive significant changes in the inductor requirements for the LC filter. A traditional 400-kHz Class-D automotive audio amplifier typically uses a 10 µH, while the 2.1-MHz higher switching frequency amplifier design can take advantage of a much smaller and lighter- weight inductor in the range of 3.3-µH (assuming that each amplifier provides equivalent output power). The important parameters are discussed to understand their effects on determining the proper inductor needed for high frequency class-D amplifiers. Contents 1 Inductor Parameters......................................................................................................... 2 2 Determine the Proper Inductance Value.................................................................................. 2 3 Selection Guide .............................................................................................................. 7 4 References ..................................................................................................................
    [Show full text]
  • LM2596 SIMPLE SWITCHER Power Converter 150 Khz3a Step-Down
    Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM2596 SIMPLE SWITCHER Power Converter 150 kHz 3A Step-Down Voltage Regulator May 2002 LM2596 SIMPLE SWITCHER® Power Converter 150 kHz 3A Step-Down Voltage Regulator General Description Features The LM2596 series of regulators are monolithic integrated n 3.3V, 5V, 12V, and adjustable output versions circuits that provide all the active functions for a step-down n Adjustable version output voltage range, 1.2V to 37V (buck) switching regulator, capable of driving a 3A load with ±4% max over line and load conditions excellent line and load regulation. These devices are avail- n Available in TO-220 and TO-263 packages able in fixed output voltages of 3.3V, 5V, 12V, and an adjust- n Guaranteed 3A output load current able output version. n Input voltage range up to 40V Requiring a minimum number of external components, these n Requires only 4 external components regulators are simple to use and include internal frequency n Excellent line and load regulation specifications compensation†, and a fixed-frequency oscillator. n 150 kHz fixed frequency internal oscillator The LM2596 series operates at a switching frequency of n TTL shutdown capability 150 kHz thus allowing smaller sized filter components than n Low power standby mode, I typically 80 µA what would be needed with lower frequency switching regu- Q n lators. Available in a standard 5-lead TO-220 package with High efficiency several different lead bend options, and a 5-lead TO-263 n Uses readily available standard inductors surface mount package.
    [Show full text]
  • Fundamentals of MOSFET and IGBT Gate Driver Circuits
    Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................
    [Show full text]
  • The Stripline Circulator Theory and Practice
    The Stripline Circulator Theory and Practice By J. HELSZAJN The Stripline Circulator The Stripline Circulator Theory and Practice By J. HELSZAJN Copyright # 2008 by John Wiley & Sons, Inc. All rights reserved Published by John Wiley & Sons, Inc. Published simultaneously in Canada No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, scanning, or otherwise, except as permitted under Section 107 or 108 of the 1976 United States Copyright Act, without either the prior written permission of the Publisher, or authorization through payment of the appropriate per-copy fee to the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, (978) 750-8400, fax (978) 750-4470, or on the web at www.copyright.com. Requests to the Publisher for permission should be addressed to the Permissions Department, John Wiley & Sons, Inc., 111 River Street, Hoboken, NJ 07030, (201) 748-6011, fax (201) 748-6008, or online at http:// www.wiley.com/go/permission. Limit of Liability/Disclaimer of Warranty: While the publisher and author have used their best efforts in preparing this book, they make no representations or warranties with respect to the accuracy or completeness of the contents of this book and specifically disclaim any implied warranties of merchantability or fitness for a particular purpose. No warranty may be created or extended by sales representatives or written sales materials. The advice and strategies contained herein may not be suitable for your situation. You should consult with a professional where appropriate. Neither the publisher nor author shall be liable for any loss of profit or any other commercial damages, including but not limited to special, incidental, consequential, or other damages.
    [Show full text]
  • Doppler-Based Acoustic Gyrator
    applied sciences Article Doppler-Based Acoustic Gyrator Farzad Zangeneh-Nejad and Romain Fleury * ID Laboratory of Wave Engineering, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland; farzad.zangenehnejad@epfl.ch * Correspondence: romain.fleury@epfl.ch; Tel.: +41-412-1693-5688 Received: 30 May 2018; Accepted: 2 July 2018; Published: 3 July 2018 Abstract: Non-reciprocal phase shifters have been attracting a great deal of attention due to their important applications in filtering, isolation, modulation, and mode locking. Here, we demonstrate a non-reciprocal acoustic phase shifter using a simple acoustic waveguide. We show, both analytically and numerically, that when the fluid within the waveguide is biased by a time-independent velocity, the sound waves travelling in forward and backward directions experience different amounts of phase shifts. We further show that the differential phase shift between the forward and backward waves can be conveniently adjusted by changing the imparted bias velocity. Setting the corresponding differential phase shift to 180 degrees, we then realize an acoustic gyrator, which is of paramount importance not only for the network realization of two port components, but also as the building block for the construction of different non-reciprocal devices like isolators and circulators. Keywords: non-reciprocal acoustics; gyrators; phase shifters; Doppler effect 1. Introduction Microwave phase shifters are two-port components that provide an arbitrary and variable transmission phase angle with low insertion loss [1–3]. Since their discovery in the 19th century, such phase shifters have found important applications in devices such as phased array antennas and receivers [4,5], beam forming and steering networks [6,7], measurement and testing systems [8,9], filters [10,11], modulators [12,13], frequency up-convertors [14], power flow controllers [15], interferometers [16], and mode lockers [17].
    [Show full text]