Introduction to antiferromagnetic magnons
Cite as: J. Appl. Phys. 126, 151101 (2019); https://doi.org/10.1063/1.5109132 Submitted: 06 May 2019 . Accepted: 22 September 2019 . Published Online: 15 October 2019
Sergio M. Rezende, Antonio Azevedo, and Roberto L. Rodríguez-Suárez
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J. Appl. Phys. 126, 151101 (2019); https://doi.org/10.1063/1.5109132 126, 151101
© 2019 Author(s). Journal of Applied Physics TUTORIAL scitation.org/journal/jap
Introduction to antiferromagnetic magnons
Cite as: J. Appl. Phys. 126, 151101 (2019); doi: 10.1063/1.5109132
Submitted: 6 May 2019 · Accepted: 22 September 2019 · View Online Export Citation CrossMark Published Online: 15 October 2019
Sergio M. Rezende,1,a) Antonio Azevedo,1 and Roberto L. Rodríguez-Suárez2
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1Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife, Pernambuco, Brazil 2Facultad de Física, Pontifícia Universidad Católica de Chile, Casilla 306, Santiago, Chile
a)Author to whom correspondence should be addressed: [email protected]
ABSTRACT The elementary spin excitations in strongly magnetic materials are collective spin deviations, or spin waves, whose quanta are called magnons. Interest in the experimental and theoretical investigation of magnons attracted many groups worldwide about 4–6 decades ago and then waned for some time. In recent years, with the advent of the field of spintronics, the area of magnonics has gained renewed atten- tion. New phenomena have been discovered experimentally, and others have been predicted theoretically. In this tutorial, we briefly review the basic concepts of magnons in antiferromagnetic (AF) materials. Initially, we present a semiclassical view of the equilibrium spin configu- rations and of the antiferromagnetic resonance in AF materials with two types of magnetic anisotropy, easy-axis and easy-plane. Then, we present a quantum theory of magnons for these materials and apply the results to two important AF insulators, MnF2 and NiO. Finally, we introduce the concept of antiferromagnetic magnonic spin current that plays a key role in several phenomena in antiferromagnetic spintronics.
Published under license by AIP Publishing. https://doi.org/10.1063/1.5109132
I. INTRODUCTION In his 1970 Nobel lecture, Louis Néel2 stated that “Antiferromagnetic materials are extremely interesting from the Antiferromagnets are magnetic materials that have no net ” macroscopic magnetization and, therefore, are almost insensitive to theoretical viewpoint, but do not seem to have any application. external magnetic fields. The existence of antiferromagnetism was This pessimistic view of antiferromagnets would change dramati- proposed by Louis Néel1 to account for the magnetic behavior of cally a few decades later. Today, these materials have practical some salts with complicated lattice structures. Néel first assumed applications and promise to deliver several more. The debut of that the ordered magnetic arrangements could be described in antiferromagnets in technology was made possible with the discov- “ ” ery of the giant magnetoresistance effect (GMR) in 1988 by Albert terms of spin sublattices, each having all spins aligned in the 3 4 same direction. Then, he considered that the interaction between Fert and Peter Grünberg. They showed that in magnetic struc- the spins in different sublattices could be negative so that they tures with nanometer thick multilayers, the electron transport would be aligned antiparallel. Now we know that the coupling could be controlled by the spin instead of the electric charge as in between spins originates mainly in the exchange interaction, with conventional electronics. This discovery triggered research in mag- magnitude represented by an exchange parameter J. The intra- netic multilayers and gave birth to the field of spintronics, which sublattice J is positive because it is due to direct exchange, while has revolutionized magnetic recording technologies and promises the intersublattice J is negative because it arises from the super- new functionalities to electronic devices. exchange that is mediated by ligand ions between the magnetic Antiferromagnetic materials proved to be essential in GMR ions. If the sublattices have different magnetizations, the materials sensors for pinning the magnetization of a reference ferromagnetic – are called “ferrimagnets,” which have spontaneous net magnetiza- layer by means of the exchange bias phenomenon.5 7 Since the late tion below the ordering temperature Tc and in many respects 1990s, disk-drive magnetic read-heads are based on GMR sensors behave like ferromagnets. Materials with J , 0 that have sublattices that are much more sensitive to changes in magnetic fields than the with the same magnetization are called “antiferromagnets.” In the traditional induction heads. Although important, antiferromagnetic ordered phase, below a critical temperature called Néel temperature (AF) materials have had a passive role in spintronic devices; the TN , they are magnetic but have no net macroscopic magnetization. active role is played by ferromagnetic materials. However, in recent
J. Appl. Phys. 126, 151101 (2019); doi: 10.1063/1.5109132 126, 151101-1 Published under license by AIP Publishing. Journal of Applied Physics TUTORIAL scitation.org/journal/jap
years, this scenario began to change with new experimental and constant. The important exchange interactions are illustrated in theoretical results showing that antiferromagnets have several Fig. 1(a). In MnF2, the exchange parameters determined by inelas- 19 advantages over ferromagnets in spintronic phenomena. One of tic neutron scattering measurements are J1 ¼ 0:028 meV, them is the fact that AF materials are insensitive to external mag- J2 ¼ 0:152 meV, and J3 ¼ 0:004 meV. Thus, the negative inter- netic perturbations. Another one is the ultrafast dynamics of anti- sublattice J2 is the dominant interaction and determines the antifer- ferromagnets that promise device operation in the terahertz frequency romagnetic arrangement of the sublattices. range. These late developments gave rise to the field of antiferro- In order to find the spin equilibrium configuration, we use a 8–14 ~ ~ magnetic spintronics. macrospin approximation and associate to Si and Sj the uniform In this tutorial, we review the basic concepts and properties of sublattice magnetizations in sublattices 1 and 2, respectively, given ~ ~ the collective spin excitations in antiferromagnets, the spin waves, by M1,2 ¼ γ hN Si,j, where N is the number of spins per unit whose quanta are called magnons. Antiferromagnets are known to volume. For T ¼ 0, the static sublattice magnetizations have the exist with a great variety of crystalline structures and physical proper- same value, M1 ¼ M2 ¼ M. Considering a magnetic field H0 ties, and new materials continue to be discovered.13 Here, we will applied along the c axis, the z-direction of the system shown in restrict attention to simple AF insulators with only two sublattices, Fig. 1, from Eq. (1), we have the energy per unit volume one class with uniaxial magnetic anisotropy, also called easy-axis anisotropy, such as the fluorides MnF and FeF , and the other with H H 2 2 E ¼ H (M þ M ) þ E M~ M~ A (M2 þ M2 ), (2) two anisotropy axes, or easy-plane anisotropy, such as the oxides 0 1z 2z M 1 2 2M 1z 2z NiO and MnO. where HE and HA are the effective exchange and anisotropy fields II. SPIN CONFIGURATIONS IN SIMPLE defined by ANTIFERROMAGNETS ¼ =γ ¼ =γ We consider initially two simple antiferromagnets with uniax- HE 2SzJ2 h, HA 2SD h, (3) ial, or easy-axis, anisotropy, MnF2 and FeF2. Both have the rutile crystal structure, a body-centered tetragonal lattice with the mag- where we have considered only intersublattice exchange interaction netic ions occupying the corner and body-centered positions, as between the z nearest neighbors. Due to the symmetry, the sublat- 15 tice magnetizations and the applied field are in the same plane so shown in Fig. 1(a). Below the Néel temperature, 66.5 K for MnF2 that the energy in Eq. (2) becomes and 78.4 K for FeF2, and in the absence of an external magnetic field, the spins are arranged in two oppositely directed sublattices, θ θ pointing along the easy anisotropy direction (c axis). The magnetic E( 1, 2) ¼ H0(cos θ1 þ cos θ2) þ HE cos(θ1 þ θ2) properties are described very well by a Hamiltonian consisting of M contributions from Zeeman, exchange, and magnetic anisotropy HA 2 2 – (cos θ þ cos θ ), (4) energies in the form16 19 2 1 2 X X X ~ ~ ~ z 2 θ θ ¼ γ ~ þ 0 0 where 1 and 2 are the polar angles of the corresponding sublattice H h H0 Si 2Jii Si Si D (Si ) , (1) i i;i0=i i magnetizations. The conditions @E=@θ1 ¼ @E=@θ2 ¼ 0 give two possible equilibrium configurations. As illustrated in Fig. 1(b), θ1 ¼ γ ¼ μ = θ ¼ π where g B h is the gyromagnetic ratio, g is the spectroscopic 0, 2 corresponds to the antiferromagnetic (AF) phase, while splitting factor, μ is the Bohr magneton, h is the reduced Plank θ ¼ θ ¼ cos 1[H =(2H H )] corresponds to the spin-flop ~ B ~ 1 2 0 E A constant, Si is the spin (in units of h ) at a generic lattice site i, H0 (SF) phase. Substitution of these angles in Eq. (4) shows that the AF is the applied magnetic field, Jii0 is the exchange constant of the phase has lower energy for fields H0 , HSF, while the SF phase has 1=2 ~ ~ 0 . ¼ 2 interaction between spins Si and Si and D is the uniaxial anisotropy lower energy for H0 HSF, where HSF (2HEHA HA) .For
FIG. 1. (a) Crystal structure of the easy-axis rutile antifer- 2+ romagnets MnF2 and FeF2. The ions M represent Mn or Fe2+. (b) Spin configurations in the antiferromagnetic (AF) and spin flop (SF) phases with the external field applied along the easy axis.
J. Appl. Phys. 126, 151101 (2019); doi: 10.1063/1.5109132 126, 151101-2 Published under license by AIP Publishing. Journal of Applied Physics TUTORIAL scitation.org/journal/jap
small fields applied in the z-direction, the spins are along the c axis in the AF phase. As the field intensity increases and reaches HSF, the system undergoes a first-order phase transition to the SF phase. The magnetic interactions in MnF2 and FeF2 are dominated by nearest-neighbor exchange, having comparable intersublattice 15 exchange fields, respectively, HE ¼ 526 kOe and HE ¼ 540 kOe. fi 2+ In MnF2, the ground state con guration of the magnetic Mn ions 5 6 is 3d ( S5/2), which has no orbital angular momentum so that it has very small single-ion anisotropy. The origin of the magnetic anisotropy of MnF2 relies mainly in the dipolar interaction, with a 19,20 relatively small effective anisotropy field HA ¼ 8:2 kOe so that 1=2 HSF (2HEHA) ¼ 93 kOe. The temperature dependence of the spin-flop field has been measured by ultrasonic techniques,21 anti- 22 ff 23 ferromagnetic resonance, and spin Seebeck e ect. In FeF2, the fi 2+ 5 5 ground state con guration of the magnetic Fe ions is 3d ( D4), which has a finite orbital angular momentum, resulting in a large effective anisotropy field HA ¼ 200 kOe arising from the spin-orbit 24,25 coupling. Thus, the spin-flop field is large, HSF ¼ 505 kOe, and can be attained only with pulsed magnetic fields.26 FIG. 2. Crystal structure and spin arrangements in the easy-plane antiferromag- The other material we will investigate here is NiO, which, 2− net NiO. The small yellow circles represent O ions and the large circles repre- due to its simple structure and spin interactions, is considered a sent the Ni2+ ions. prototypical room-temperature antiferromagnetic insulator. Its magnetic structure and spin interactions are similar to those in MnO.27,28 This material has been extensively used in experimental Considering the external field applied along one of the – – 0 investigations of many phenomena, such as exchange bias,5 7,29 31 z -directions in the {111} plane, with Eq. (5), we obtain for the inelastic light scattering,32,33 and magnetic response at terahertz energy per unit volume – frequencies.34 36 More recently, it has been shown that a thin HE ~ ~ HAx 2 2 layer of NiO in spintronic devices can be used to transport a mag- E ¼ H0(M1z0 þ M2z0 ) þ M1 M2 þ (M þ M ) – 1x 2x nonic spin current while blocking charge current.37 42 Also, NiO M 2M HAz 2 2 has the potential to generate radiation with terahertz frequency in 0 þ 0 (M1z M2z ), (6) spin-torque nano-oscillators,43 and under a thermal gradient it 2M ff 44 exhibits the spin Seebeck e ect at room temperature. where, with the relevant intersublattice exchange constant, the In the paramagnetic phase, NiO has the face-centered cubic effective exchange field is given by the same expression as in structure of sodium chloride. Below the Néel temperature fi 2+ Eq. (3), but now we have two anisotropy elds TN 523 K, the Ni spins are ordered ferromagnetically in {111} h i planes, lying along 112 axes, with adjacent planes oppositely HAx ¼ 2SDx=γ h , HAz ¼ 2SDz=γ h : (7) magnetized due to a super-exchange AF interaction, as illustrated in Fig. 2. It is characterized by two distinct anisotropies, a negative In order to simplify calculations, we assume a monodomain one (hard) along h111i axes that forces the spins into the {111} sample with the field applied along an easy direction. In this case, h i planes, and a positive (easy) in-plane one along 112 axes. The M1x ¼ M2x ¼ 0 and Eq. (6) reduces to Eq. (2) so that the result spin Hamiltonian with Zeeman energy, exchange interaction previously obtained is valid here. In NiO, the effective fields are ¼ ¼ : ¼ : fi energy, and out-of-plane (x) and in-plane (z) anisotropy energies HE 9 684 kOe, HAx 6 35 kOe,pHffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiAz 0 11 kOe so that the eld 28 47 can be written as for the spin-flop transition HSF ¼ 2HEHAz is 46.3 kOe. X X X 0 2 III. ANTIFERROMAGNETIC RESONANCE: THE k =0 H ¼ γ h H~ ~S þ 2J ~S ~S þ D (Sx )2 D (Sz ) 0 i,j ij i j x i,j z i,j : MAGNONS i,j i,j i,j (5) We now derive the resonance frequencies of the uniform pre- cession modes of the sublattice magnetizations, which correspond The difference to Eq. (1) is that the Hamiltonian now contains to the magnons with zero wave vector. The equations of motion for the magnetization components are obtained from the Landau– two anisotropy terms, with anisotropy constants Dx and Dz. Both are taken to be positive so that the signs in Eq. (5) imply that x is a Lifshitz equation hard direction along a h111i axis, while z0 are easy directions along ~ dM1,2 ~ ~ h112i axes. Since there are three equivalent directions in the easy- ¼ γM1,2 Heff 1,2, (8) dt plane and four {111} planes, in bulk NiO crystals there are AF ~ domains with spins in 12 different directions, which complicates where Heff 1,2 represent the effective fields that act on the sublattice the interpretation of some magnetic measurements.45,46 magnetizations, given by
J. Appl. Phys. 126, 151101 (2019); doi: 10.1063/1.5109132 126, 151101-3 Published under license by AIP Publishing. Journal of Applied Physics TUTORIAL scitation.org/journal/jap