Atomically Thin Crcl3: an In-Plane Layered Antiferromagnetic Insulator Xinghan Cai,1,2 Tiancheng Song,1 Nathan P
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Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator Xinghan Cai,1,2 Tiancheng Song,1 Nathan P. Wilson, 1 Genevieve Clark,3 Minhao He,1 Xiaoou Zhang,4 Takashi Taniguchi,5 Kenji Watanabe,5 Wang Yao,6 Di Xiao,4 Michael A. McGuire,7 David H. Cobden,1 Xiaodong Xu1,3* 1Department of Physics, University of Washington, Seattle, Washington 98195, USA. 2National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China. 3Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA. 4Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA. 5National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan. 6Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. 7Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. *Correspondence to: [email protected] Abstract: The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two- dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy- plane normal to the c-axis, that is the polarization is in the plane of each layer and has no preferred direction within it. Ligand field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices. Keywords: 2D magnetic insulator, in-plane layered antiferromagnetism, magnetic tunnel junction, weak magnetic anisotropy, magnetic phase transition The experimental observation of magnetism in atomically thin films1-8 has opened a new avenue to study novel magnetic multilayered devices using 2D materials9-21. To date, all magnetic compounds that have been successfully synthesized down to the monolayer limit exhibit strong Ising anisotropy, which supports an out-of-plane magnetization within each layer. In this regard, CrCl3 represents a curious case in that bulk CrCl3 is known to be a weakly coupled, layered 22-25 antiferromagnet with small XY anisotropy (Figure 1a) . Therefore, exfoliating CrCl3 offers the intriguing possibility to realize a strictly 2D magnetic insulator with in-plane magnetization. This could be useful for investigating how a magnet with weak anisotropy evolves on approaching the 2D limit. The monolayer may behave as a good approximation to the 2D XY-model, analogous to thin film superfluids, superconductors and liquid crystals26,27, allowing the study of the Berezinskii–Kosterlitz–Thouless (BKT) transition28 and related phenomena. Moreover, the in- plane magnetization is also complementary to the out-of-plane magnetization in terms of the 29-33 proximity effect when CrCl3 is layered with other 2D materials. CrCl3 flakes were exfoliated onto SiO2/Si substrates. In atomic force microscope images (Figure 1b), bilayers and trilayer regions appear 1.2 nm and 1.8 nm thick, respectively, consistent with a previous report25. Figure 1c shows both the circular polarization components of the photoluminescence (PL) from a ~ 5 nm thick sample at a temperature of 2 K, well below the Neel temperature of ~ 14 K. The excitation laser is 20 µW, linearly polarized, and at 532 nm. A single broad peak centered at ~ 870 nm is seen, analogous to the parity-forbidden d-d ligand-field 34 transition in CrI3 . Unlike in CrI3, where the out-of-plane magnetization component results in spontaneously circularly-polarized PL, the two polarization components in thin bulk CrCl3 are indistinguishable, consistent with the in-plane magnetization determined in its bulk crystal. This PL emission feature persists down to the monolayer CrCl3 (Figure 1d), implying that the insulating nature retains in CrCl3 to its 2D limit. To investigate the in-plane magnetization we employ vertical tunneling measurements, which are sensitive to the relative alignment of spins in different layers. As sketched in Figure 2a, a few layer CrCl3 tunnel barrier is sandwiched between top and bottom thin graphite flakes to form magnetic tunnel junction (MTJ), this being further encapsulated in hexagonal boron nitride (h-BN) to avoid degradation (see Methods). The tunneling junction area is typically less than ~1 μm2 to avoid 1,13 effects caused by lateral magnetic domain structures . Figure 2b shows the tunneling current, It, as a function of DC bias voltage, V, measured at 2 K for a bilayer CrCl3 device whose optical image is inset. With an applied in-plane magnetic field μ0Hin=2 T (red trace) the current is enhanced relative to its value at zero field (blue trace), implying a change in the spin configuration 35 of the CrCl3 . The bottom inset shows the tunneling magnetoresistance (TMR), defined as 13 100% × [퐼푡(2 T) − 퐼푡(0)]/퐼푡(0) . The TMR is largest at low bias, where the response is linear. Figure 2c shows the tunneling current, It, here measured using a small AC bias of Vac = 1 mV, as a function of magnetic field. For either in-plane field (퐻푖푛, orange) or out-of-plane field (퐻표푢푡, c green), It increases smoothly before plateauing out when the field exceeds a critical value (μ0Hin c = 1.2 T and μ0Hout = 1.5 T). This behavior is similar to that seen for an in-plane field in CrI3 MTJs. It implies that the spin polarizations of the two layers are opposite at zero field, suppressing the tunneling current by a spin-filtering effect, but become increasingly aligned due to the Zeeman term in an external field. This in turn suggests that the layered antiferromagnetic order of the bulk crystal, with in-plane ferromagnetic polarization that alternates in direction between adjacent layers, persists in the bilayer limit. c c The fact that Hout is only slightly larger than Hin , and the smooth rise of 퐼푡 seen for both field orientations, are consistent with relatively weak anisotropy in the material. Indeed, the field dependence of the tunneling current can be well fit by a simple model of two antiferromagnetically coupled macrospins with easy-plane anisotropy, 퐾 퐻 = 퐽 풔 ⋅ 풔 + (푠2 + 푠2 ) − 푔휇 푩 ⋅ (풔 + 풔 ), 퐴퐹 1 2 2 1,푧 2,푧 퐵 1 2 where 퐽퐴퐹 > 0 is the interlayer antiferromagnetic exchange, 퐾 > 0 is the easy-plane anisotropy energy, and 푩 is the magnetic field. According to our fitting, the anisotropy is 퐾푆/푔휇퐵 = 0.27 T and interlayer coupling is 퐽퐴퐹푆/푔휇퐵 = 0.6 T (See Supplementary material). We note that there is some asymmetry of It as a function of 퐻푖푛, associated with hysteresis as shown in Figure 2d. This might be due to a spin-flop transition associated with a previously reported, very small easy-axis 24,25 anisotropy (10 Oe) within the easy-plane . No hysteresis is seen as a function of Hout (Figure 2d, inset), as expected for spin canting in a magnetic field perpendicular to the zero-field polarization. This is in sharp contrast to the situation in bilayer CrI3, where the transition from antiferromagnetic to a fully aligned ferromagnetic state in a perpendicular field is a sudden spin- flip transition. The picture of layered antiferromagnetism is further supported by measurements on a trilayer CrCl3 MTJ device (Figure 3), an optical micrograph of which is inset to Figure 3b. The thicker barrier presented by a trilayer leads to much weaker tunneling which necessitates a much larger bias voltage to achieve a suitable signal to noise ratio. Without loss of generality, a DC bias of 600 mV is applied (See supplementary material for the bias voltage dependent tunneling measurements). As seen in Figure 3a, It increases smoothly with Hout, again consistent with gradual 13 spin canting out of the layers as in the bilayer case . However, as a function of 퐻푖푛 the current exhibits a plateau near zero field below a critical value, above which it smoothly rises and reaches a plateau when the magnetic field is large enough to align all three layers to the fully spin polarized state. To test for magnetic anisotropy within the plane of the layers, we measured the tunneling current while varying the orientation, θ, of Hin within the plane. Figure 3b shows It as a function of Hin at selected angles, while Figure 3c is a polar plot of It as a function of angle at selected magnetic fields. No significant dependence on 휃 is observed, implying that the overall magnetic order can rotate freely about the c-axis, i.e., the plane of the layers is an easy plane. The observed plateau of tunneling current as a function of in-plane magnetic field is due to the uncompensated total magnetization in a trilayer, consistent with the picture of layered antiferromagnetism. We conclude that atomically thin CrCl3 can be well described as a layered antiferromagnetic insulator with easy- plane magnetic anisotropy. Figure 4a shows the tunneling current It measured AC with Vac = 5 mV as a function of T at selected in-plane magnetic fields. At Hin = 0, on increasing 푇 from base, at first It increases. This can be explained by suppression of the spin filtering effect due to thermal fluctuations which reduce the degree of antiferromagnetic alignment between the layers.