EE 311 Device Electronics for Integrated Circuits

Home , Electronics, Semiconductor device

------Course Number: EE-311

Course Name: Device Electronics for Integrated Circuits (Electronic Devices)

Credits: 3-0-0-3 Semester: Odd

Prerequisites: IC121 Mechanics of Particles and Waves

Intended for: UG Elective or Core: Core

Preamble: This course builds the knowledge-base on the physics of semiconductors as related to the characteristics and design of solid-state electronic devices. It provides an introduction to the device electronics for integrated circuits, a foundation for the use of device models in circuit analysis and design tools, and motivation for life-long learning.

Course Outline: The objective of the course is to provide the fundamental knowledge for understanding concepts of semiconductor devices. This is a required core-course for Electrical

Engineering UG students. The first part of the course provides an introduction to the basic physics of electrons in solids, quantum mechanics, and solid-state physics needed to understand nano-electronic devices. The second part is devoted to the fundamental theory of electron dynamics, carrier transport including ballistic transport, drift, diffusion, and recombination/generation. The third part of the course applies the fundamentals to describe the operation of several basic semiconductor devices: p-n junctions, metal-semiconductor junctions, Diodes, metal oxide semiconductor field effect transistors

(MOSFETs), Complementary MOSFETs (CMOS) and BipolarJunction Transistors (BJTs).

Device Electronics for Integrated Circuits

1. SEMICONDUCTOR ELECTRONICS: Physics of Semiconductor Materials, Band Model of

Solids, Holes, Bond Model Donors and Acceptors, Thermal-Equilibrium Statistics, Free Carriers in

Semiconductors, Drift Velocity, Mobility and Scattering, Diffusion Current, Device: Hall-Effect Magnetic Sensor, Physics of the Hall Effect, Integrated Hall-Effect Magnetic Sensor.

2.METAL-SEMICONDUCTOR CONTACTS and pn JUNCTIONS: Equilibrium in

Electronic Systems, Idealized Metal-Semiconductor junctions, Current-Voltage Characteristics,

Schottky Barrierr, Nonrectifying, Tunnel , SchottkyOhmic Contacts, Surface Effects, Surface Effects on Metal-Semiconductor Contacts, Metal-Semiconductor Devices: Schottky Diodes, Schottky Diodes in Integrated Circuits. The pn junction, Step Junction, Linearly Graded Junction, Heterojunctions,

Reverse-Biased pn junctions, junction Breakdown, Avalanche Breakdown, Zener Breakdown.

Generation and Recombination, Shockley-HaIl-Read Recombination, Current-Voltage Characteristics of pn junctions, Integrated-Circuit Diodes, Light-Emitting Diodes.

3.BIPOLAR TRANSISTORS: BASIC PROPERTIES & LIMITATIONS: Transistor Action,

Transistors for Integrated Circuits, Transistor Switching, Regions of Operatio, Ebers-Moll Model,

Devices: Planar Bipolar Amplifying and Switching Transistors, Heterojunction Bipolar Transistors,

Double Heterojunction Bipolar Transistor, Effects of Collector Bias Variation (Early Effect), Effects at

Low and High Emitter Bias, Small-Signal Transistor Model, Frequency Limits of Bipolar Transistors.

4. FIELD-EFFECT TRANSISTORS (MOSFETs): PHYSICAL EFFECTS AND MODELS:

The Ideal MOS Structure, MOS Electronics, Capacitance of the MOS System CV

Behavior of an Ideal MOS System, Oxide and Interface Charge, Origins of Oxide

Charge, Experimental Determination of Oxide Charge, MOS Capacitors and Charge-Coupled

Devices, Basic MOSFET Behavior, Improved Models for Short-Channel MOSFETs, Devices:

Complementary MOSFETs-CMOS, Electric Fields in the Velocity-Saturation Region, Substrate

Current, Gate Current, Device Degradation, Devices: MOS Nonvolatile Memory Structures

5. Electronic Devices and Nanoelectronics

Electronic Device Materials: Si, Ge and GaAs. Comparison and properties Advanced Device

Technology, Purification and growth, wafer production, epitaxy and deposition, oxidation and metallisation; lithography and implantation Advanced Devices Electronic properties of interfaces and hetero structures, GaAs, MESFET, MISFET and HEMT devices, GaAs IMPATT structures, Emerging Device Technologies Selected topics from: Ge-Si as a device material; molecular electronics; wide band gap semiconductors; microsensors and smart sensors.

Text Book:

SEMICONDUCTOR DEVICES- Physics and Technology, 3nd Edition, by S. M. Sze and M.K.

Lee (John Wiley & Sons, 2012)

References:

1. “Physics of Semiconductor Devices” by S. M. Sze and Kwok K.Ng, 3rd, Edition, ( John Wiley & Sons, 2002)

2. “Solid State Electronic Devices”, by Ben G. Steetman and Sanjay Banerjee 6th Edition, Prentice

Hall, 2005

3. “Semiconductor Device Fundamentals”, by Robert F. Pierret, Addison-Wesley Publishing, 1996

4. “Semiconductor Physics and Devices”, by Donald A. Neamen, 3rd Eddition, McGrawHill, 2003

5. “Semiconductor Devices- Basic Principles”, by Jasprit Singh, John Wiley and Sons Inc., 2001