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(12) United States Patent (10) Patent No.: US 6,799,137 B2 Schietinger Et Al

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(12) United States Patent (10) Patent No.: US 6,799,137 B2 Schietinger Et Al USOO67991.37B2 (12) United States Patent (10) Patent No.: US 6,799,137 B2 Schietinger et al. (45) Date of Patent: Sep. 28, 2004 (54) WAFER TEMPERATURE MEASUREMENT 3.262,758 A 7/1966 Stewart et al. METHOD FOR PLASMA ENVIRONMENTS 4,075,493 A 2/1978 Wickersheim 4,348,110 A 9/1982 Ito Inventors: Charles W. Schietinger, Milwaukie, 4,574.486 A 3/1986 Drechsler (75) 4,750,139 A 6/1988 Dils OR (US); Ronald A. Palfenier, Oregon 4,845,647 A 7/1989 Dils et al. City, OR (US) 4.956,538 A 9/1990 Moslehi 5,154,512 A 10/1992 Schietinger et al. (73) Assignees: Engelhard Corporation, Iselin, NJ 5,231,595 A * 7/1993 Makino et al. ............. 702/134 (US); Exactus, Inc., Boca Raton, FL 5,305,416 A * 4/1994 Fiory ............... ... 392/416 (US) 5,624,590 A * 4/1997 Fiory ......................... 219/390 Notice: Subject to any disclaimer, the term of this (List continued on next page.) patent is extended or adjusted under 35 OTHER PUBLICATIONS U.S.C. 154(b) by 65 days. “Optical Pyrometry Begins to Fulfill its Promise,” Alex ander Braun, Semiconductor International, Mar. 1998, pp. 1 (21) Appl. No.: 10/197,230 and 2. (22) Filed: Jul. 16, 2002 (List continued on next page.) (65) Prior Publication Data Primary Examiner John Barlow US 2003/0033110 A1 Feb. 13, 2003 ASSistant Examiner Demetrius R. Pretlow (74) Attorney, Agent, or Firm-Stoel Rives LLP Related U.S. Application Data (57) ABSTRACT (63) Continuation-in-part of application No. 09/872,752, filed on Jun. 1, 2001, now Pat. No. 6,647.350. The temperature of a semiconductor wafer (160) is mea (60) Provisional application No. 60/307,422, filed on Jul. 23, Sured while undergoing processing in a plasma (168) envi 2001, provisional application No. 60/209,168, filed on Jun. ronment. At least two pyrometers (162, 164) receive radia 2, 2000, provisional application No. 60/209,074, filed on tion from, respectively, the Semiconductor wafer and the Jun. 2, 2000, provisional application No. 60/209,076, filed plasma in a plasma process chamber. The first pyrometer on Jun. 2, 2000, and provisional application No. 60/217,012, receives radiation from either the front or rear Surface of the filed on Jul. 10, 2000. wafer, and the Second pyrometer receives radiation from the (51) Int. Cl........................... G01K11/30; G06F 15/00 plasma. Both pyrometers may be Sensitive to the same (52) U.S. Cl. ....................................................... 702/134 radiation wavelength. A controller (170) receives signals (58) Field of Search ................................. 702/134, 136, from the first and Second pyrometers and calculates a 702/99; 374/120, 121, 123; 250/370.15; corrected wafer emission, which is employed in the Planck 118/715 Equation to calculate the wafer temperature. Alternatively, both pyrometers are positioned beneath the wafer with the (56) References Cited first pyrometer Sensitive to a first wavelength where the wafer is Substantially opaque to plasma radiation, and the U.S. PATENT DOCUMENTS Second pyrometer is Sensitive to a wavelength where the 1475,365 A 11/1923 Schueler et al. wafer is Substantially transparent to plasma radiation. 1,639,534 A 8/1927 Ruben 2,709,367 A 5/1955 Bohnet 24 Claims, 12 Drawing Sheets 16 -10 Electronics Light From Hot Object 28 Photo 24 9? detector A to D High Speed Digital Output Amplifier 26 PrOCeSSOr A. US 6,799,137 B2 Page 2 U.S. PATENT DOCUMENTS RTAT/C and RT Measurements, B.E. Adams, Workshop on Temp. Meas. of Semi. Wafers Using Thermocouples, 5,696,863 A 12/1997 Kleinerman ................ 385/123 5,717.608 A 2/1998 Jensen RTP 2000 confernece, Gaithersburg, Maryland, Sep. 19, 5,769,540 A * 6/1998 Schietinger et al. ........ 374/127 2OOO. 5,815,410 A 9/1998 Heinke et al. A Review of Wafer Temperature Measurement Using Opti 5,897,610 A 4/1999 Jensen cal Fibers and Ripple Pyrometry, C. Schietinger, 5th Inter 5,930,456 A * 7/1999 Vosen ......................... 392/416 national Rapid Thermal Processing Conference RTP 97, 5.997,175 A * 12/1999 Champetier et al. ........ 374/126 New Orleans, LA, Sep. 3-5, 1997. 6,007.241 A 12/1999 Yam et al. Advances in Rapid Thermal and Integrated Processing, 6,160,242 A 12/2000 Guardado ................... 219/390 Chapter 3 and 4, Editor F. Roozeboom, Kluwer Academic 6,191,392 B1 2/2001 Hauf et al. ................. 219/411 Publishers, The Netherlands, 1996. 6,299,346 B1 * 10/2001 Ish-Shalom et al. ........ 374/126 Wafer Temperature Measurement: Status Utilizing Optical 6,325,536 B1 12/2001 Renken et al. .............. 374/161 Fibers, C. Schietinger, Proc. Symp. Mat. Res. Soc., San OTHER PUBLICATIONS Francisco, Apr. 8-12, 1996. “MAXLINE BCS Background Compensation System”, “A New Detector for IRLED Light,” Russ Dahl and Michael Allen, reprinted from SENSORS Magazine, Dec. 1996, 4 Ircon, Inc., Niles, Illinois, Feb., 1998, pp. 1-8. pp. * cited by examiner U.S. Patent Sep. 28, 2004 Sheet 1 of 12 US 6,799,137 B2 0|| 09 JOSS30OJ,9, 2øèz U.S. Patent Sep. 28, 2004 Sheet 2 of 12 US 6,799,137 B2 U.S. Patent Sep. 28, 2004 Sheet 3 of 12 US 6,799,137 B2 S\/\\/29 HOLOELEGI SOINOHIO3)3 (LHVHOIHd)º'91-' U.S. Patent Sheet 4 of 12 US 6,799,137 B2 TENNWHOETENIS!”0/SNET U.S. Patent Sep. 28, 2004 Sheet 5 of 12 US 6,799,137 B2 NS U.S. Patent Sep. 28, 2004 Sheet 6 of 12 US 6,799,137 B2 6 O 4. O N NS 2 O N S 400 600 800 1300 1800 WAFER LAMPS PROCESSING 146 CHAMBER 144 THERMAL ENERGY 142 LIGHT GUIDE -1 RODS 12 DIRECT CONNECTION TO LIGHT GUIDE RODS u1 DIGITAL 140 SIGNAL FIG 10 U.S. Patent Sep. 28, 2004 Sheet 7 of 12 US 6,799,137 B2 co C) c\ cy o CN E if (N: C CD CD Q is co -- c\ SNOTN- S --- d -- SS.SN La CD O O is a L5 g 3 eI i Ll d O d C C O y- Y- r - s uOSSuSUe U.S. Patent Sep. 28, 2004 Sheet 8 of 12 US 6,799,137 B2 N \, A 0. 2HA t t 7OO 8OO 900 1 OOO Wavelength11 OO 12OO 1300 (nm) 4OO 15OO 600 7OO 8OO 900 1 OOO Wavelength11 OO 1200 13OO (nm) 1400 15OO 16OO U.S. Patent Sep. 28, 2004 Sheet 9 of 12 US 6,799,137 B2 Photon Energy (eV) FIG. 13 106 3 2 1.5 1 O.7 Ga03nO.7ASO,64P0.36 Amorphous; Si O2 O6 1 14 18 Wavelength (um) O 0.7 0.8 O.9 1.O. 11 12 13 14 15 1.6 17 18 1.9 Wavelength (um) U.S. Patent Sep. 28, 2004 Sheet 10 of 12 US 6,799,137 B2 LAVNo.vºº".[TT,HVILú, (uu)u?6uÐIÐABNA }???? 0093OO?700z.00?720033000Z008|009||007OOZ000||009 ¿Y||u|uogës, ?º||LI, o O ||||||||||||||||||||||||||||||||||||||||||| (NWW) AllAEISueS OlOud U.S. Patent Sep. 28, 2004 Sheet 11 of 12 US 6,799,137 B2 (%)|HIHSHLÐNETEAVNA +|!:} FG 16 166 PLASMA SOURCE 160 CD Cl )) (_) O 2 H OCC -O –1 –1 LLI CC U.S. Patent Sep. 28, 2004 Sheet 12 of 12 US 6,799,137 B2 PLASMA SOURC 186 US 6,799,137 B2 1 2 WAFER TEMPERATURE MEASUREMENT tion depends on the measurement and control of wafer METHOD FOR PLASMA ENVIRONMENTS temperature. AS wafer sizes increase and the critical dimen Sion of very large Scale ICS Scales deeper into the Sub RELATED APPLICATIONS micron range, the requirements for wafer-to-wafer tempera ture repeatability during processing become ever more This application claims priority from U.S. Provisional demanding. application No. 60/307,422, filed Jul. 23, 2001, and is a continuation-in-part of U.S. patent application Ser. No. Processes such as physical vapor deposition (“PVD”), 09/872,752, filed Jun. 1, 2001, now U.S. Pat. No. 6,647,350 high-density plasma chemical vapor deposition (“HDP which claims priority from U.S. Provisional Application CVD), epitaxy, and RTP can be improved if the wafer temperature is accurately measured and controlled during Nos. 60/209,168; 60/209,074; and 60/209,076; all filed Jun. processing. In RTP there is a special importance to tempera 2, 2000, and Ser. No. 60/217,012, filed Jul. 10, 2000. ture monitoring because of the high temperatures and the FEDERALLY SPONSORED RESEARCH OR importance of tightly controlling the thermal budget, as is DEVELOPMENT also the case for Chemical Mechanical Polishing (“CMP") 15 Not applicable and Etch processes. AS wafer sizes increase, the cost of each wafer increases TECHNICAL FIELD geometrically, and the importance of high quality in-process temperature monitoring increases accordingly. Inadequate This invention relates to radiometric temperature mea wafer temperature control during processing reduces fabri Surement Systems (also known as "pyrometers”) and more cation yields and directly translates to lost revenues. particularly to a measurement method employing a pyrom In addition to conventional pyrometry, the most common eter System having improved low temperature measurement in-Situ temperature Sensing techniques employed by Semi Sensitivity for determining a Surface temperature of a Semi conductor processing wafer fabs and foundries also includes conductor wafer or an object without contacting its Surface. thermocouples and advanced pyrometry. 25 Thermocouples are easy to use, but their reliability and BACKGROUND OF THE INVENTION accuracy are highly questionable. Thermocouples are only Pyrometer-based temperature measurement Systems have accurate when the wafer is in thermal equilibrium with its a long development history.
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