DOCSLIB.ORG

Towards Personal Fabricators: Tabletop Tools for Micron and Sub-Micron Scale Functional Rapid Prototyping

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Towards Personal Fabricators: Tabletop Tools for Micron and Sub-Micron Scale Functional Rapid Prototyping Towards Personal Fabricators: Tabletop tools for micron and sub-micron scale functional rapid prototyping. Saul Griffith B.Met.E. University of NSW, 1997. ME, University of Sydney, 2000. Submitted to the Program in Media Arts and Sciences School of Architecture and Planning in partial fulfillment of the requirements for the degree of Master of Science in Media Arts and Sciences at the Massachusetts Institute of Technology February 2001 ©2000 Massachusetts Institute of Technology All rights reserved Written by Saul Griffith Program in Media Arts and Sciences September 30, 2000 Certified by Joseph Jacobson Assistant Professor Program in Media Arts and Sciences Department of Mechanical Engineering Thesis Advisor Accepted by Stephen Benton Chair of Departmental Committee on Graduate Students Program in Media Arts and Sciences 1 Towards Personal Fabricators: Tabletop tools for micron and sub-micron scale functional rapid prototyping. Saul Griffith Abstract Three tools for the rapid prototyping of micron and sub-micron scale devices are presented. These tools represent methods for the manufacture of PEMS, or Printed micro Electro Mechanical Systems, and are enabled because they exploit the novel properties of nanocrystalline materials and their interactions with energetic beams. UV contact mask lithography was used to directly pattern metallic nanocrystals on glass and polyimide surfaces without vacuum or etching processes or the use of photoresist layers. Direct electron beam lithography of nanocrystalline metals was used to pattern multiple layer, multiple material, structures with minimum feature sizes of 100nm. Finally a micro-mirror array based selective laser sintering apparatus was built for the rapid, maskless patterning of PEMS. This tool was used to directly pattern metal structures, and for the rapid manufacture of elastomeric stamps for "nano embossing". Minimum feature sizes under 10 microns were achieved and routes to 2 micron features described. Processing time was reduced to hours from the weeks for traditional photomask / photolithography based systems. These tools are examined in the greater context of rapid prototyping technologies. Thesis Advisor: Joseph Jacobson Assistant Professor Program in Media Arts and Sciences Department of Mechanical Engineering 2 Towards Personal Fabricators: Tabletop tools for micron and sub-micron scale functional rapid prototyping. Saul Griffith Thesis Committee Joseph Jacobson Assistant Professor Program in Media Arts and Sciences Department of Mechanical Engineering Thesis Advisor Neil Gershenfeld Professor Program in Media Arts and Sciences MIT Media Laboratory Thesis Reader Hiroshi Ishii Associate Professor Program in Media Arts and Sciences MIT Media Laboratory Thesis Reader 3 Towards Personal Fabricators: Tabletop tools for micron and sub-micron scale functional rapid prototyping. Table of Contents Certification ............................................................................................................................1 Abstract ...................................................................................................................... 2 Table of Contents...................................................................................................... 4 Table of Figures.......................................................................................................... 6 1 – Introduction .............................................................................................................9 2 - The Printing of things..............................................................................................13 Printing over orders of magnitude ........................................................................ 13 10-9m – The STM ........................................................................................................ 15 10-8m – The AFM....................................................................................................... 16 10-7m – Electron beams, Ion beams, deep UV lithography, microstamping.. 19 10-6m – Optical lithography, MEMS and IC’s ....................................................... 20 10-5m – Ink Jets, laser printers, and the desktop.................................................. 21 10-4m – Stereolithography and rapid prototyping .............................................. 22 10-3m – NC machining – Milling and turning........................................................ 24 10-1m – Laser and Water jet cutting...................................................................... 24 100m – Large objects and specialized printers for industrial niches. ................ 26 101m and beyond – The printing of truly big things: architectural structures. 27 10allm Matter compilers and DE-compilers. ......................................................... 30 3 – PEMS: Printed Electro-Mechanical Systems ........................................................32 Current state of the art........................................................................................... 33 Alternative Routes to MEMS prototyping and manufacture ............................ 34 Decomposition of organometallics ...................................................................... 34 Direct laser based processing. .............................................................................. 35 Photo-Electroforming.............................................................................................. 36 Stamping. ................................................................................................................. 37 Ink Jet ........................................................................................................................ 38 Electroplating........................................................................................................... 38 Summary................................................................................................................... 39 4 - Working with nanoparticles..................................................................................40 Melting point depression.............................................................................................40 Depositing colloidal solutions......................................................................................42 Thin Film Properties - Grain size ...................................................................................44 5 – Early experimental work - Nanoparticles and Energetic beams......................47 Serial scanning of IR diode laser ........................................................................... 47 Experimental .................................................................................................................48 Results ....................................................................................................................................48 Gaussian Beam Effects and line morphology. .................................................................49 Multiple layers.......................................................................................................................51 Serial limitations. ...................................................................................................................51 Thermal vs. photo-cleavage curing. .................................................................................51 Through mask patterning utilising broadband UV.............................................. 52 Experimental .................................................................................................................53 Electron Beam Lithography ................................................................................... 55 4 Background ..................................................................................................................55 This work.........................................................................................................................56 Multiple layer fabrication. ..................................................... Error! Bookmark not defined. Minimum features. ...............................................................................................................60 Multiple materials and properties. .....................................................................................61 Registration techniques.......................................................................................................62 Conclusions .............................................................................................................. 63 6 – A Laser based rapid prototyping tool for MEMS .................................................65 Optical limitations of apparatus.................................................................................66 Digital Apodisation:......................................................................................................67 Patterning of nanocrystalline colloids: ................................................................. 70 Patterning of photoresists and spin glasses: ........................................................ 71 Rapid prototyping of elastomeric stamps for ‘nanoembossing’. .................... 72 Summary and further work..................................................................................... 74 Acknowledgements ...................................................................................................77 References
Load more

Recommended publications
  • Maskless Lithography Using Silicon Oxide Etch- Stop Layer Induced by Megahertz Repetition Femtosecond Laser Pulses
    Maskless lithography using silicon oxide etch- stop layer induced by megahertz repetition femtosecond laser pulses Amirkianoosh Kiani,1 Krishnan Venkatakrishnan,1 Bo Tan,2,* and Venkat Venkataramanan3 1Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3, Canada 2Department of Aerospace Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3, Canada 3Institute for Optical Sciences, University of Toronto, 60, St. George Street, Suite 331, Toronto, Ontario M5S 1A7, Canada *[email protected] Abstract: In this study we report a new method for maskless lithography fabrication process by a combination of direct silicon oxide etch-stop layer patterning and wet alkaline etching. A thin layer of etch-stop silicon oxide of predetermined pattern was first generated by irradiation with high repetition (MHz) ultrafast (femtosecond) laser pulses in air and at atmospheric pressure. The induced thin layer of silicon oxide is used as an etch stop during etching process in alkaline etchants such as KOH. Our proposed method has the potential to enable low-cost, flexible, high quality patterning for a wide variety of application in the field of micro- and nanotechnology, this technique can be leading to a promising solution for maskless lithography technique. A Scanning Electron Microscope (SEM), optical microscopy, Micro-Raman, Energy Dispersive X-ray (EDX) and X- ray diffraction spectroscopy were used to analyze the silicon oxide layer induced by laser pulses. ©2011 Optical Society of America OCIS codes: (220.3740) Lithography; (220.4000) Microstructure fabrication; (320.7090) Ultrafast lasers; (350.3850) Materials processing; (350.5340) Photothermal effects. References and links 1.
    [Show full text]
  • Maskless Laser-Write Lithography of A-Si:H TFT Passive Pixel Sensor for Hemispherical Imager By
    Maskless Laser-Write Lithography of a-Si:H TFT Passive Pixel Sensor for Hemispherical Imager by Geonwook Yoo A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Electrical Engineering) in The University of Michigan 2011 Doctoral Committee: Professor Jerzy Kanicki, Chair Professor Peter F. Green Professor Kensall D. Wise Associate Professor Jamie D. Phillips © Geonwook Yoo 2011 Acknowledgements I sincerely appreciate Prof. Jerzy Kanicki, my research advisor and doctoral committee chair, for his support and guidance throughout my graduate study. It was a great and precious opportunity for me to work with him on this exciting project. I am deeply grateful for my doctoral committee members, Prof. Kensall D. Wise, Prof. Peter F. Green, and Prof. Jamie D. Phillips for their help in completing my thesis. I also truly thank Daniela Radtke at Fraunhofer Institute for Applied Optics and Precision Engineering in Germany, Tae-Kyung Won at AKT America, Inc., Sandro Tedde at Siemens AG TC, and Werner Salewski at Heidelberg Instrument. A large portion of the success of this work is attributed to their collaboration and advice. My special thanks belong to Daniela for her help on laser-write lithography. I express my gratitude to all LNF staffs, especially to Brian VanDerElzen. I thank my current and previous group members: Gwanghyeon Baek, Dr. Hojin Lee, Dr. Alex Kuo, Dr. Tze-ching Fung, Dr. Charlene Chen, and Dennis Feng. It was their support and friendship that helped me to get through the course of graduate study. In addition I am very grateful to all my seniors and friends both in U.S and Korea for their belief and support.
    [Show full text]
  • MEMS Fabrication1
    16 MEMS Fabrication1 Marc J. Madou 16.1 Wet Bulk Micromachining: Introduction Nanogen, Inc. 16.2 Historical Note 16.3 Silicon Crystallography Miller Indices • Crystal Structure of Silicon • Geometric Relationships between Some Important Planes in the Silicon Lattice 16.4 Silicon as a Substrate and Structural Material Silicon as Substrate • Silicon as a Structural Element in Mechanical Sensors 16.5 Wet Isotropic and Anisotropic Etching Wet Isotropic and Anisotropic: Empirical Observations • Chemical Etching Models 16.6 Etching With Bias and/or Illumination of the Semiconductor Electropolishing and Microporous Silicon 16.7 Etch-Stop Techniques Introduction • Boron Etch Stop • Electrochemical Etch-Stop Technique • Photo-Assisted Electrochemical Etch Stop (for n-Type Silicon) • Photo-Induced Preferential Anodization, PIPA (for p-Type Silicon) • Etch Stop at Thin Films-Silicon on Insulator 16.8 Problems with Wet Bulk Micromachining Introduction • Extensive Real Estate Consumption • Corner Compensation 16.9 Wet Bulk Micromachining Examples 16.10 Surface Micromachining: Introduction 16.11 Historical Note 16.12 Mechanical Properties of Thin Films Introduction • Adhesion • Stress in Thin Films • Strength of Thin Films 16.13 Surface Micromachining Processes Basic Process Sequence • Fabrication Step Details • Control of Film Stress • Dimensional Uncertainties • Sealing Processes in Surface Micromachining • IC Compatibility 16.14 Poly-Si Surface Micromachining Modifications Porous Poly-Si • Hinged Polysilicon • Thick Polysilicon • Milli-Scale Molded
    [Show full text]
  • Call for Papers | 2022 MRS Spring Meeting
    Symposium CH01: Frontiers of In Situ Materials Characterization—From New Instrumentation and Method to Imaging Aided Materials Design Advancement in synchrotron X-ray techniques, microscopy and spectroscopy has extended the characterization capability to study the structure, phonon, spin, and electromagnetic field of materials with improved temporal and spatial resolution. This symposium will cover recent advances of in situ imaging techniques and highlight progress in materials design, synthesis, and engineering in catalysts and devices aided by insights gained from the state-of-the-art real-time materials characterization. This program will bring together works with an emphasis on developing and applying new methods in X-ray or electron diffraction, scanning probe microscopy, and other techniques to in situ studies of the dynamics in materials, such as the structural and chemical evolution of energy materials and catalysts, and the electronic structure of semiconductor and functional oxides. Additionally, this symposium will focus on works in designing, synthesizing new materials and optimizing materials properties by utilizing the insights on mechanisms of materials processes at different length or time scales revealed by in situ techniques. Emerging big data analysis approaches and method development presenting opportunities to aid materials design are welcomed. Discussion on experimental strategies, data analysis, and conceptual works showcasing how new in situ tools can probe exotic and critical processes in materials, such as charge and heat transfer, bonding, transport of molecule and ions, are encouraged. The symposium will identify new directions of in situ research, facilitate the application of new techniques to in situ liquid and gas phase microscopy and spectroscopy, and bridge mechanistic study with practical synthesis and engineering for materials with a broad range of applications.
    [Show full text]
  • As Filed with the Securities and Exchange Commission on June 30, 1999
    As filed with the Securities and Exchange Commission on June 30, 1999 -------------------------------------------------------------------------------- SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 20-F |_| REGISTRATION STATEMENT PURSUANT TO SECTION 12(b) OR (g) OF THE SECURITIES EXCHANGE ACT OF 1934 OR |X| ANNUAL REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES ACT OF 1934 For the fiscal year ended: December 31, 1998 OR |_| TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES ACT OF 1934 For the transition period from to Commission file number: 1-13546 STMicroelectronics N.V. (Exact name of Registrant as specified in its charter) Not Applicable The Netherlands (Translation of Registrant's (Jurisdiction of incorporation name into English) or organization) Technoparc du Pays de Gex -- B.P. 112 Route de Pre-Bois 165, rue Edouard Branly ICC Bloc A 01637 Saint Genis Pouilly 1215 Geneva 15 France Switzerland (Addresses of principal executive offices) Securities registered or to be registered pursuant to Section 12(b) of the Act: Name of each exchange on Title of each class: which registered: Common Shares, nominal value Euro 3.12 per share New York Stock Exchange Liquid Yield OptionTM Notes due June 10, 2008 New York Stock Exchange Securities registered or to be registered pursuant to Section 12(g) of the Act: None Securities for which there is a reporting obligation pursuant to Section 15(d) of the Act: None Indicate the number of outstanding shares of each of the issuer's classes of capital or common stock as of the close of the period covered by the annual report: 142,478,106 Common Shares Indicate by check mark whether the registrant (1) has filed all reports required to be filed by Section 13 or 15(d) of the Securities Exchange Act of 1934 during the preceding 12 months (or for such shorter period that the registrant was required to file such reports), and (2) has been subject to such filing requirements for the past 90 days.
    [Show full text]
  • 2000 Annual Report (Form 20-F)
    As filed with the Securities and Exchange Commission on May 15, 2001 SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 20-F £ REGISTRATION STATEMENT PURSUANT TO SECTION 12(b) OR (g) OF THE SECURITIES EXCHANGE ACT OF 1934 OR T ANNUAL REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the fiscal year ended: December 31, 2000 OR £ TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES EXCHANGE ACT OF 1934 For the transition period from to Commission file number: 1-13546 STMicroelectronics N.V. (Exact name of Registrant as specified in its charter) Not Applicable The Netherlands (Translation of Registrant’s (Jurisdiction of incorporation name into English) or organization) Route de Pré-Bois ICC Bloc A1215 Geneva 15 Switzerland (Address of principal executive offices) Securities registered or to be registered pursuant to Section 12(b) of the Act: Name of each exchange on Title of each class: which registered: Common Shares, nominal value € 1.04 per share New York Stock Exchange Liquid Yield OptionTM Notes due June 10, 2008 New York Stock Exchange Liquid Yield OptionTM Notes due September 22, 2009 New York Stock Exchange Securities registered or to be registered pursuant to Section 12(g) of the Act: None Securities for which there is a reporting obligation pursuant to Section 15(d) of the Act: None Indicate the number of outstanding shares of each of the issuer’s classes of capital or common stock as of the close of the period covered by the annual report: 889,881,287 Common Shares Indicate by check mark whether the registrant (1) has filed all reports required to be filed by Section 13 or 15(d) of the Securities Exchange Act of 1934 during the preceding 12 months (or for such shorter period that the registrant was required to file such reports), and (2) has been subject to such filing requirements for the past 90 days.
    [Show full text]
  • Maskless Exposure Device for Photolithography
    International Master’s Degree Programme In Biomedical Engineering DHANESH KATTIPPARAMBIL RAJAN MASKLESS EXPOSURE DEVICE FOR PHOTOLITHOGRAPHY MASTER OF SCIENCE THESIS Examiners: Professor Jukka Lekkala, Professor Jari Hyttinen Subject approved by the Faculty Council on 5th March 2008 by the Faculty of Science and Environmental Engineering II ABSTRACT TAMPERE UNIVERSITY OF TECHNOLOGY International Master’s Degree Programme in Biomedical Engineering KATTIPPARAMBIL RAJAN, DHANESH: Maskless Exposure Device for Photolithography Master of Science Thesis, 96 Pages. May 2008 Major: Medical Physics Examiners: Professor Jukka Lekkala, Professor Jari Hyttinen Keywords: lithography, maskless lithography, MEMS production Photolithography plays a consequential role in transferring patterns from photomasks to substrates and thereby is an important tool in semiconductor, IC, MEMS and many microstructures’ production. The photomasks are preprinted prior to the photolithographic procedure with certain layouts, and these layouts are transferred to surfaces of materials like silicon during the lithography and finally these surfaces undergo chemical processes by which three dimensional micro features are formed. Therefore photomasks containing specific layouts are the inevitable components in the entire procedure, but unfortunately those are expensive in its nature together with time consuming production formalities. Some of the successful attempts to remove these difficulties are cost effective photomasks and maskless lithography. A system named ‘Maskless Exposure Device’ (MED) is introduced here as my thesis related research and it is intended to replace the expensive photomasks. The device transfers images and layouts created on a computer, easily and effortlessly to different substrate surfaces and can be repeatedly used in photolithography by introducing new drawings on the computer screen and thereby, MED is nothing but a maskless lithographic technique.
    [Show full text]
  • High-Throughput Plasmonic Nanolithography
    UC Berkeley UC Berkeley Electronic Theses and Dissertations Title High-Throughput Plasmonic Nanolithography Permalink https://escholarship.org/uc/item/93c7w34j Author Pan, Liang Publication Date 2010 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California High-Throughput Plasmonic Nanolithography by Liang Pan A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering-Mechanical Engineering in the Graduate Division of the University of California, Berkeley Committee in charge: Professor David B. Bogy, Co-Chair Professor Xiang Zhang, Co-Chair Professor Roberto Horowitz Professor Ming Wu Fall 2010 High-Throughput Plasmonic Nanolithography ©2010 by Liang Pan Abstract High-Throughput Plasmonic Nanolithography by Liang Pan Doctor of Philosophy in Engineering-Mechanical Engineering University of California, Berkeley Professor David B. Bogy, Co-Chair Professor Xiang Zhang, Co-Chair The conventional projection-type photolithography approach to nanoscale manufacturing is facing possibly insurmountable challenges, especially to invent novel technical solutions that remain economical for the next generation of semi-conductor integrated circuits. Although extreme ultra violet (EUV) lithography with the next generation photo-masks and 193-nm immersion lithography with double patterning are expected to deliver 22 nm and smaller nodes, it still cannot effectively address the reliability and cost issues required for mass production. Maskless nanolithography is a potentially agile and cost effective approach, but most of the current solutions have throughputs that are too low for manufacturing purposes. This dissertation reports a new low-cost high-throughput approach to maskless nanolithography that uses an array of plasmonic lenses (PL) that "fly" above the rotating surface to be patterned, concentrating short wavelength surface plasmons into sub-100 nm spots.
    [Show full text]
  • 2020 EUVL Workshop – Abstracts
    2020 EUVL Workshop June 7-11, 2020 Held Online Workshop Abstracts 2020 EUVL Workshop 2020 EUVL Workshop Sponsors Organized by Vivek Bakshi (EUV Litho, Inc.), Chair Patrick Naulleau (CXRO), Co-Chair www.euvlitho.com 1 2020 EUVL Workshop Contents Abstracts by Paper Numbers ________________________________________ 4 www.euvlitho.com 2 2020 EUVL Workshop Abstracts (Listed by Paper number) www.euvlitho.com 3 2020 EUVL Workshop P1 Lithographic Performance of The First Entirely Dry Process for EUV Lithography Mohammed Alvi1, Dictus Dries1, Richard Gottscho1, Kevin Gu1, Benjamin Kam1, Siva Kanakasabapathy1, Da Li1, Jeffrey Marks1, Katie Nardi1, Thad Nicholson1, Yang Pan1, Daniel Peters1, Al Schoepp1, Nader Shamma1, Easwar Srinivasan1, Samantha Tan1, Clint Thomas1, Boris Volosskiy1, Tim Weidman1*, Rich Wise1, William Wu1, Jun Xue1, Jengyi Yu1, Christophe Fouqu2, Rolf Custers2, Jara Garcia Santaclara2, Michael Kubis2, Gijsbert Rispens2, Lidia van Lent-Protasova2, Mircea Dusa3, Patrick Jaenen3, and Abhinav Pathak3 1LAM Reserach 2ASML 3IMEC The lithographic performance of a new entirely dry EUV photoresist platform will be described. Photoresist films are applied using reactive organometallic precursors in a vapor phase process that provides uniform, homogeneous films stable to air and visible light. EUV exposure and subsequent bake steps induce crosslinking and densification, while unexposed areas remain hydrophobic and freely soluble in common organic solvents. This has facilitated the extensive characterization of lithographic patterning performance using NXE-3400 tools at both IMEC and ASML – initially employing conventional (solvent based) negative tone development (NTD). In contrast to typical spin-on processes, dry deposited film thickness appears insensitive to substrate surface chemistry, making applied film thickness easily controlled/proportional to deposition time.
    [Show full text]
  • And Nanolithography Techniques and Their Applications
    Review on Micro- and Nanolithography Techniques and their Applications Alongkorn Pimpin* and Werayut Srituravanich** Department of Mechanical Engineering, Faculty of Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330, Thailand E-mail: [email protected]*, [email protected]** Abstract. This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking revolutionizing advancements in nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting. Keywords: Nanolithography, photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography, scanning probe lithography, dip-pen lithography, microsystems, MEMS, nanoscience, nanotechnology, nano-engineering. ENGINEERING JOURNAL Volume 16 Issue 1 Received 18 August 2011 Accepted 8 November Published 1 January 2012 Online at http://www.engj.org DOI:10.4186/ej.2012.16.1.37 DOI:10.4186/ej.2012.16.1.37 1. Introduction For decades, micro- and nanolithography technology has been contributed to the manufacturing of integrated circuits (ICs) and microchips. This advance in the semiconductor and IC industry has led to a new paradigm of the information revolution via computers and the internet. Micro- and nanolithography is the technology that is used to create patterns with a feature size ranging from a few nanometers up to tens of millimeters.
    [Show full text]
  • Design and Micro-Fabrication of Tantalum Silicide Cantilever Beam Threshold Accelerometer
    New Jersey Institute of Technology Digital Commons @ NJIT Dissertations Electronic Theses and Dissertations Fall 1-31-1995 Design and micro-fabrication of tantalum silicide cantilever beam threshold accelerometer Chang Joo Kim New Jersey Institute of Technology Follow this and additional works at: https://digitalcommons.njit.edu/dissertations Part of the Electrical and Electronics Commons Recommended Citation Kim, Chang Joo, "Design and micro-fabrication of tantalum silicide cantilever beam threshold accelerometer" (1995). Dissertations. 1117. https://digitalcommons.njit.edu/dissertations/1117 This Dissertation is brought to you for free and open access by the Electronic Theses and Dissertations at Digital Commons @ NJIT. It has been accepted for inclusion in Dissertations by an authorized administrator of Digital Commons @ NJIT. For more information, please contact [email protected]. Copyright Warning & Restrictions The copyright law of the United States (Title 17, United States Code) governs the making of photocopies or other reproductions of copyrighted material. Under certain conditions specified in the law, libraries and archives are authorized to furnish a photocopy or other reproduction. One of these specified conditions is that the photocopy or reproduction is not to be “used for any purpose other than private study, scholarship, or research.” If a, user makes a request for, or later uses, a photocopy or reproduction for purposes in excess of “fair use” that user may be liable for copyright infringement, This institution
    [Show full text]
  • Laser-Plasma Sources for Extreme-Ultraviolet Lithography
    Laser-Plasma Sources for Extreme-Ultraviolet Lithography BJÖRN A. M. HANSSON Doctoral Thesis Stockholm, Sweden 2003 TRITA FYS 2003-56 ISSN 0280-316X KTH ISRN KTH/FYS/--03:56--SE SE-100 44 Stockholm ISBN 91-7283-658-X SWEDEN Akademisk avhandling som med tillstånd av Kungl Tekniska högskolan framlägges till offentlig granskning för avläggande av teknologie doktorsexamen fredagen den 19 december 2003 kl. 10.00 i Kollegiesalen, Administrationsbyggnaden, Kungl Tekniska högskolan, Valhallavägen 79, Stockholm. °c Björn A. M. Hansson, november 2003 Tryck: Universitetsservice US AB iii Abstract This thesis describes the development and characterization of a liquid- xenon-jet laser-plasma source for extreme-ultraviolet (EUV) radiation. It is shown how this source may be suitable for production-scale EUV lithography (EUVL). EUVL is one of the main candidates to succeed deep-ultraviolet (DUV) lithography for large-scale manufacturing of integrated circuits (IC). However, a major obstacle towards the realization of EUVL is the current unavailability of a source meeting the tough requirements on especially power and clean- liness for operation in an EUVL stepper. The liquid-xenon-jet laser-plasma concept has key advantages that may make it suitable for EUVL since, e.g., its plasma consists only of the inert noble gas xenon and since the liquid- jet target technology enables plasma operation at large distances from the source-hardware thereby reducing sputtering and to allowing for high-power operation. At the beginning of the work described in this thesis, a spatial insta- bility of the liquid-xenon-jet made stable operation of a plasma at practical distances from the nozzle orifice difficult.
    [Show full text]