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Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT Murat Baylav
Rochester Institute of Technology RIT Scholar Works Theses Thesis/Dissertation Collections 2010 Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT Murat Baylav Follow this and additional works at: http://scholarworks.rit.edu/theses Recommended Citation Baylav, Murat, "Ion-sensitive field effect transistor (ISFET) for MEMS multisensory chips at RIT" (2010). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by the Thesis/Dissertation Collections at RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. Title Page Ion-Sensitive Field Effect Transistor (ISFET) for MEMS Multisensory Chips at RIT By Murat Baylav A Thesis Submitted In Partial Fulfillment of the Requirements of the Degree of Master of Science in Microelectronic Engineering Approved by: Professor ___________________________________ Date: __________________ Dr. Lynn F. Fuller (Thesis Advisor) Professor ___________________________________ Date: __________________ Dr. Karl D. Hirschman (Thesis Committee Member) Professor ___________________________________ Date: __________________ Dr. Santosh K. Kurinec (Thesis Committee Member) Professor ___________________________________ Date: __________________ Dr. Robert Pearson (Director, Microelectronic Engineering Program) Professor ___________________________________ Date: __________________ Dr. Sohail Dianat (Chair, Electrical -
Ionizing Radiation Effects on CMOS Imagers Manufactured in Deep Submicron Process
Ionizing Radiation Effects on CMOS Imagers Manufactured in Deep Submicron Process Vincent Goiffona, Pierre Magnana, Fr´ed´eric Bernardb, Guy Rollandb, Olivier Saint-P´ec, Nicolas Hugera and Franck Corbi`erea aUniversit´ede Toulouse, ISAE, 10 avenue E. Belin, 31055, Toulouse, France; bCNES, 18 avenue E. Belin, 31401, Toulouse, France; cEADS Astrium, 31 avenue des cosmonautes, 31402, Toulouse, France ABSTRACT We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging. We designed a test chip made of one 128×128- 3T-pixel array with 10 µm pitch and more than 120 isolated test structures including photodiodes and MOSFETs with various implants and different sizes. All these devices were exposed to ionizing radiation up to 100 krad and their responses were correlated to identify the CMOS sensor weaknesses. Characterizations in darkness and under illumination demonstrated that dark current increase is the major sensor degradation. Shallow trench isolation was identified to be responsible for this degradation as it increases the number of generation centers in photodiode depletion regions. Consequences on hardness assurance and hardening-by-design are discussed. Keywords: CMOS image sensor, CIS, APS, deep submicron technology, ionizing radiation, total dose, dark current, STI, hardening by design, RHDB 1. INTRODUCTION Ionizing radiation effects on CMOS image sensors for space and scientific applications have been studied1–6 for several years. However, the use of deep submicron technologies (DSM) has brought new behaviors7 such as enhanced gate oxide hardness or radiation induced narrow channel effect.8 These effects have been initially observed and explained on deep submicron low voltage MOS transistors dedicated to digital logic applications. -
Temperature Compensation Circuit for ISFET Sensor
Journal of Low Power Electronics and Applications Article Temperature Compensation Circuit for ISFET Sensor Ahmed Gaddour 1,2,* , Wael Dghais 2,3, Belgacem Hamdi 2,3 and Mounir Ben Ali 3,4 1 National Engineering School of Monastir (ENIM), University of Monastir, Monastir 5000, Tunisia 2 Electronics and Microelectronics Laboratory, LR99ES30, Faculty of Sciences of Monastir, University of Monastir, Monastir 5000, Tunisia; [email protected] (W.D.); [email protected] (B.H.) 3 Higher Institute of Applied Sciences and Technology of Sousse (ISSATSo), University of Sousse, Sousse 4003, Tunisia; [email protected] 4 Nanomaterials, Microsystems for Health, Environment and Energy Laboratory, LR16CRMN01, Centre for Research on Microelectronics and Nanotechnology, Sousse 4034, Tunisia * Correspondence: [email protected]; Tel.: +216-50998008 Received: 3 November 2019; Accepted: 21 December 2019; Published: 4 January 2020 Abstract: PH measurements are widely used in agriculture, biomedical engineering, the food industry, environmental studies, etc. Several healthcare and biomedical research studies have reported that all aqueous samples have their pH tested at some point in their lifecycle for evaluation of the diagnosis of diseases or susceptibility, wound healing, cellular internalization, etc. The ion-sensitive field effect transistor (ISFET) is capable of pH measurements. Such use of the ISFET has become popular, as it allows sensing, preprocessing, and computational circuitry to be encapsulated on a single chip, enabling miniaturization and portability. However, the extracted data from the sensor have been affected by the variation of the temperature. This paper presents a new integrated circuit that can enhance the immunity of ion-sensitive field effect transistors (ISFET) against the temperature. -
An Extended CMOS ISFET Model Incorporating the Physical Design
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Spiral - Imperial College Digital Repository IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. XXX, NO. XXX, XXX XXX 1 An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation Yan Liu, Student Member, IEEE, Pantelis Georgiou, Member, IEEE, Themistoklis Prodromakis, Member, IEEE, Timothy G. Constandinou, Senior Member, and Christofer Toumazou, Fellow, IEEE Abstract—This paper presents an extended model for the as large-scale, highly-integrated chemical sensor arrays [4], CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), in- [6]. corporating design parameters associated with the physical In this paper we present an extended model for CMOS- geometry of the device. This can, for the first time, provide a good match between calculated and measured characteristics by based ISFETs to include both the first order effects, (i.e. taking into account the effects of non-idealities such as threshold intrinsic dimension-related characteristics) and second order voltage variation and sensor noise. The model is evaluated effects, (i.e. non-linear characteristics). By focusing on the through a number of devices with varying design parameters effect of varying the design parameters (i.e physical dimen- (chemical sensing area and MOSFET dimensions) fabricated in sions) a capacitance-based model is derived which includes all a commercially-available 0.35µm CMOS technology. Threshold voltage, subthreshold slope, chemical sensitivity, drift and noise capacitive structures, the values of which are directly related were measured and compared to the simulated results. The to physical dimensions. -
MOSFET - Wikipedia, the Free Encyclopedia
MOSFET - Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/MOSFET MOSFET From Wikipedia, the free encyclopedia The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET, NMOS FET, PMOS FET, nMOS FET, pMOS FET). The 'metal' in the name (for transistors upto the 65 nanometer technology node) is an anachronism from early chips in which the gates were metal; They use polysilicon gates. IGFET is a related, more general term meaning insulated-gate field-effect transistor, and is almost synonymous with "MOSFET", though it can refer to FETs with a gate insulator that is not oxide. Some prefer to use "IGFET" when referring to devices with polysilicon gates, but most still call them MOSFETs. With the new generation of high-k technology that Intel and IBM have announced [1] (http://www.intel.com/technology/silicon/45nm_technology.htm) , metal gates in conjunction with the a high-k dielectric material replacing the silicon dioxide are making a comeback replacing the polysilicon. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, have begun to use a mixture of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs. -
An Integrated Semiconductor Device Enabling Non-Optical Genome Sequencing
ARTICLE doi:10.1038/nature10242 An integrated semiconductor device enabling non-optical genome sequencing Jonathan M. Rothberg1, Wolfgang Hinz1, Todd M. Rearick1, Jonathan Schultz1, William Mileski1, Mel Davey1, John H. Leamon1, Kim Johnson1, Mark J. Milgrew1, Matthew Edwards1, Jeremy Hoon1, Jan F. Simons1, David Marran1, Jason W. Myers1, John F. Davidson1, Annika Branting1, John R. Nobile1, Bernard P. Puc1, David Light1, Travis A. Clark1, Martin Huber1, Jeffrey T. Branciforte1, Isaac B. Stoner1, Simon E. Cawley1, Michael Lyons1, Yutao Fu1, Nils Homer1, Marina Sedova1, Xin Miao1, Brian Reed1, Jeffrey Sabina1, Erika Feierstein1, Michelle Schorn1, Mohammad Alanjary1, Eileen Dimalanta1, Devin Dressman1, Rachel Kasinskas1, Tanya Sokolsky1, Jacqueline A. Fidanza1, Eugeni Namsaraev1, Kevin J. McKernan1, Alan Williams1, G. Thomas Roth1 & James Bustillo1 The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. -
The Design, Fabrication, and Testing of Corrugated Silicon Nitride Diaphragms
36 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 3, NO. I, MARCH 1994 The Design, Fabrication, and Testing of Corrugated Silicon Nitride Diaphragms Patrick R. Scheeper, Wouter Olthuis, and Piet Bergveld Abstract-Silicon nitride corrugated diaphragms of 2 mm x 2 mm x lpm have been fabricated with 8 circular corrugations, having depths of 410, or 14 pm. The diaphragms with 4-pm-deep corrugations show a measured mechanical sensitivity (increase in the deflection over the increase in the applied pressure) which is 25 times larger than the mechanical sensitivity of flat diaphragms I of equal size and thickness. Since this gain in sensitivity is due to Fig. I. Schematic cross-sectional view of a circular corrugated diaphragm reduction of the initial stress, the sensitivity can only increase in and characteristic parameters. the case of diaphragms with initial stress. A simple analytical model has been proposed that takes the influence of initial tensile stress into account. The model predicts to-run reproducibility is determined by the reproducibility of that the presence of corrugations increases the sensitivity of the the initial conditions of the reactor (affected by contamination, diaphragms, because the initial diaphragm stress is reduced. The adsorbed water, previously deposited layers) and the accuracy model also predicts that for corrugations with a larger depth the sensitivity decreases, because the bending stiffness of the of the instruments which control the reactor temperature, the corrugations then becomes dominant. These predictions have pressure and the mass flow of the process gases. Variations of been confirmed by experiments. a factor 2 of the initial stress have been measured. -
Dynamic Ph Sensor with Embedded Calibration Scheme by Advanced CMOS Finfet Technology
sensors Article Dynamic pH Sensor with Embedded Calibration Scheme by Advanced CMOS FinFET Technology Chien-Ping Wang 1, Ying-Chun Shen 2, Peng-Chun Liou 1, Yu-Lun Chueh 2, Yue-Der Chih 3, Jonathan Chang 3, Chrong-Jung Lin 1 and Ya-Chin King 1,* 1 Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (C.-P.W.); [email protected] (P.-C.L.); [email protected] (C.-J.L.) 2 Institute of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; [email protected] (Y.-C.S.); [email protected] (Y.-L.C.) 3 Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan; [email protected] (Y.-D.C.); [email protected] (J.C.) * Correspondence: [email protected]; Tel.: +886-3-5162219 or +886-3-5721804 or +1-123914307 Received: 4 March 2019; Accepted: 29 March 2019; Published: 2 April 2019 Abstract: In this work, we present a novel pH sensor using efficient laterally coupled structure enabled by Complementary Metal-Oxide Semiconductor (CMOS) Fin Field-Effect Transistor (FinFET) processes. This new sensor features adjustable sensitivity, wide sensing range, multi-pad sensing capability and compatibility to advanced CMOS technologies. With a self-balanced readout scheme and proposed corresponding circuit, the proposed sensor is found to be easily embedded into integrated circuits (ICs) and expanded into sensors array. To ensure the robustness of this new device, the transient response and noise analysis are performed. In addition, an embedded calibration operation scheme is implemented to prevent the proposed sensing device from the background offset from process variation, providing reliable and stable sensing results. -
A Novel Coding Method for Radar Signal Waveform Design
APPLICATION OF ION SELECTIVE FIELD EFFECT TRANSISTOR FOR HYDROGEN ION MEASUREMENT SYSTEM Ibrahim Elkhier Hussien Arfeen1, Abdul Rasoul Jabar Kizar Alzubaidi2 1 Sudanese Standards and Metrology Organization, Port Sudan 2 Electronic Dept- Engineering College-Sudan University for science and Technology Received December 2010, accepted after revision June 2011 ُمـ ْســتَ ْخـلـَص َهذف هذا انبحث إنً دراصت تزانزصتىر تأثُز انًدبل كًحضبس كًُُبئٍ َضتخذو نًزاقبت اﻷس انهُذروخُنٍ فٍ يدبل انكًُُبء انتحهُهُت و انبُئُت. تعتًذ حضبصُت حضبس تزانزصتىر تأثُز انًدبل عهٍ نىع انًبدة اﻹنكتزونُت انًضتخذيت كًدش فٍ بىابت انتزانزصتىر. وَضتخذو فٍ يىاضع انقُبس انتٍ َصعب فُهب اصتخذاو انًحضبس انزخبخٍ انقببم نهكضز. تضتخذو دائزة إنكتزونُت نزبط يحضبس تزانزصتىر تأثُز انًدبل تًكنه ين انعًم بصىرة فعبنت فٍ انًذي ين اﻷس انهُذروخُنٍ 4 إنً 44. وظُفت انذائزة اﻹنكتزونُت هي تحىَم تُبر دخم انًحضبس انذٌ ًَثم قُى اﻷس انهُذروخنٍ إنً خهذ خزج يتنبصب. تى اختببر انتصًُى بىاصطت يحبنُم قُبصُت وخًضت أنىاع ين انًحبنُم انًبئُت وتى انحصىل عهً اننتبئح انًطهىبت. تى رصى انعﻻقت بُن اننتبئح انًتحصم عهُهب بىاصطت انذائزة اﻹنكتزونُت وقُى اﻷس انهُذروخُنٍ نبعض انًحبنُم انًبئُت. ABSTRACT This paper aims to study field effect transistors as chemical sensor used for monitoring hydrogen ion concentration (H+) measurement in chemical analysis and environment fields, to detect the pH of the subjected solution. The Ion-Selective Field Effect Transistor (ISFET) sensor sensitivity depends mainly on the choice of the gate dielectric material (Silicon Nitride Membrane). The Ion-Selective Field Effect Transistor is (ISFET) used in places where fragile glass electrodes will be damaged. The interface circuit supplies the sensor with a constant current and voltage. The pH value is identified from the output voltage of the circuit. -
Design of Low Noise Ph-ISFET Microsensors and Integrated Suspended Inductors with Increased Quality B
Design of low noise pH-ISFET microsensors and integrated suspended inductors with increased quality B. Palan To cite this version: B. Palan. Design of low noise pH-ISFET microsensors and integrated suspended inductors with increased quality. Micro and nanotechnologies/Microelectronics. Institut National Polytechnique de Grenoble - INPG, 2002. English. tel-00003085 HAL Id: tel-00003085 https://tel.archives-ouvertes.fr/tel-00003085 Submitted on 4 Jul 2003 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. ÁÆËÌÁÌÍÌ ÆÌÁÇÆÄ ÈÇÄ Ì ÀÆÁÉÍ Ê ÆÇÄ Ó Æ ØØÖÙ ÔÖ Ð ÐÓØ ÕÙ ÌÀ Ë Æ ÇÌÍÌ ÄÄ ÔÓÙÖ ÓØÒÖ Ð Ö ÇÌÍÊ Ð³ÁÆÈ Ì Ä³ÍÆÁÎÊËÁÌ ÌÀÆÁÉÍ ÌÀÉÍ ÈÊ Í ËÔÐØ ÅÖÓÐØÖÓÒÕÙ ÔÖÔÖ Ù Ð ÓÖØÓÖ ÌÁÅ Ò× Ð Ö Ð³!ÓÐ Ó !ØÓÖÐ ÄÌÊÇÆÁÉ͸ ÄÌÊÇÌÀÆÁÉ͸ ÍÌÇÅ ÌÁÉ͸ ÌÄÇÅÅÍÆÁ ÌÁÇÆË¸ ËÁÆ Ä Ø Ù ÔÖØÑÒØ Ð ÅÖÓÐØÖÓÒÕÙ¸ ÍÒÚÖר ÌÒÕÙ ÌÕÙ ´ÍÌ̵ ÈÖÙ ÔÖ×ÒØ Ø ×ÓÙØÒÙ ÔÙÐÕÙÑÒØ ÔÖ ÓÙ×ÐÚ È Ä Æ Ð ½ÑÖ× ¾¼¼¾ ÌØÖ ÇÆÈÌÁÇÆ ÅÁÊÇ ÈÌÍÊË ÔÀ¹ÁËÌ ÁÄ ÊÍÁÌ Ì ³ÁÆÍÌ ÆË ÁÆÌÊË ËÍËÈÆÍË ÇÊÌ ÌÍÊ ÉÍ ÄÁÌ É ß Ö !Ø ÙÖ× % Ø × & Ó ØÙÖ ÖÒÖ ÇÍÊÌÇÁË ÈÖÓ××ÙÖ ÅÖÓ×ÐÚÀÍËÃ ß ÂÍÊ( ź ÈÖÖ ÆÌÁÄ ¸ÈÖ×ÒØ ź ÖÒÖ ÇÍÊÌÇÁË ¸ÖØÙÖ Ø× ÌÁÅ -
Development of a Hydrogel-Based Carbon Dioxide Sensor
DEVELOPMENT OF A HYDROGEL-BASED CARBON DIOXIDE SENSOR A TOOL FOR DIAGNOSING GASTROINTESTINAL ISCHEMIA The described research has been carried out at the “Miniaturized Systems For Biomedical And Environmental Applications” group (BIOS) of the MESA+ Research Institute at the University of Twente, Enschede, the Netherlands. The research was financially supported by the Dutch Technology Foundation, STW, project TTF.5439. Samenstelling promotiecommissie: Voorzitter prof. dr. ir. J. van Amerongen Universiteit Twente Promotor prof. dr. ir. P. Bergveld Universiteit Twente Co-promotor prof. dr. ir. A. van den Berg Universiteit Twente Assistent promotor dr. ir. W. Olthuis Universiteit Twente Leden prof. dr. J.F.J. Engbersen Universiteit Twente prof. dr.-ing. habil G. Gerlach Technische Universität Dresden dr. J.J. Kolkman Medisch Spectrum Twente prof. P.F. Gibson Royal Academy of Engineering Title: DEVELOPMENT OF A HYDROGEL-BASED CARBON DIOXIDE SENSOR - a tool for diagnosing gastrointestinal ischemia Cover: Front-side: artist impression of the hydrogel-based carbon dioxide sensor. Back-side: some relevant pictures and scientific notations collected during the research Author: Sebastiaan Herber ISBN: 90-365-2144-0 Printing: Febodruk B.V. Enschede Copyright © 2005 by Sebastiaan Herber, Enschede, the Netherlands DEVELOPMENT OF A HYDROGEL-BASED CARBON DIOXIDE SENSOR A TOOL FOR DIAGNOSING GASTROINTESTINAL ISCHEMIA PROEFSCHRIFT ter verkrijging van de graad van doctor aan de Universiteit Twente, op gezag van rector magnificus, prof. dr. W.H.M. Zijm, volgens besluit van het College voor Promoties in het openbaar te verdedigen op vrijdag 13 mei 2005 om 13:15 uur door Sebastiaan Herber geboren op 1 februari 1979 te Utrecht Dit proefschrift is goedgekeurd door promotor: prof. -
Monolayer Mos2 and Wse2 Double Gate Field Effect Transistor As Super Nernst Ph Sensor and Nanobiosensor
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Elsevier - Publisher Connector Sensing and Bio-Sensing Research 11 (2016) 45–51 Contents lists available at ScienceDirect Sensing and Bio-Sensing Research journal homepage: www.elsevier.com/locate/sbsr Monolayer MoS2 and WSe2 Double Gate Field Effect Transistor as Super Nernst pH sensor and Nanobiosensor Abir Shadman ⁎, Ehsanur Rahman, Quazi D.M. Khosru Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh article info abstract Article history: Two-dimensional layered material is touted as a replacement of current Si technology because of its ultra-thin Received 27 June 2016 body and high mobility. Prominent transition metal dichalcogenides (TMD), Molybdenum disulphide (MoS2), Received in revised form 24 August 2016 as a channel material for Field Effect Transistor has been used for sensing nano-biomolecules. Tungsten Accepted 26 August 2016 diselenide (WSe2), widely used as channel for logic applications, has also shown better performance than other 2D materials in many cases. pH sensor is integrated with Nanobiosensor most often since charges (value and type) of many biomolecules depend on pH of the solution. Ion Sensitive Field Effect Transistor with Silicon Keywords: – fi Double gate FET and III V materials has been traditionally used for pH sensing. Experimental result for MoS2 eld effect transistor 2D material as pH sensor has been reported in recent literature. However, no simulation-based study has been done for single pH sensor layer TMD FET as pH sensor or bio sensor. In this paper, novel MoS2 and WSe2 monolayer double gate FETs are Nernst limit proposed for pH sensor operation in Super Nernst regime and protein detection.