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256Mb DDR SDRAM REV 1.1 Features Description

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256Mb DDR SDRAM REV 1.1 Features Description NT5DS64M4BT NT5DS64M4BF NT5DS32M8BT NT5DS32M8BF NT5DS16M16BT NT5DS16M16BF 256Mb DDR SDRAM Features CAS Latency and Frequency • Differential clock inputs (CK and CK) Maximum Operating Frequency (MHz) • Four internal banks for concurrent operation CAS • Data mask (DM) for write data Latency DDR400A DDR400B (-5) (-5T) • DLL aligns DQ and DQS transitions with CK transitions 3 200 200 • Commands entered on each positive CK edge; data and 2.5 200 166 data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • Double data rate architecture: two data transfers per • CAS Latency: 2.5, 3 clock cycle • Auto Precharge option for each burst access • Bidirectional data strobe (DQS) is transmitted and • Auto Refresh and Self Refresh Modes received with data, to be used in capturing data at the receiver • 7.8ms Maximum Average Periodic Refresh Interval • DQS is edge-aligned with data for reads and is center- • SSTL_2 compatible I/O interface aligned with data for writes • VDDQ = 2.6V ± 0.1V • VDD = 2.6V ± 0.1V Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic tion may be enabled to provide a self-timed row precharge random-access memory containing 268,435,456 bits. It is that is initiated at the end of the burst access. internally configured as a quad-bank DRAM. As with standard SDRAMs, the pipelined, multibank architec- The 256Mb DDR SDRAM uses a double-data-rate architec- ture of DDR SDRAMs allows for concurrent operation, ture to achieve high-speed operation. The double data rate thereby providing high effective bandwidth by hiding row pre- architecture is essentially a 2n prefetch architecture with an charge and activation time. interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256Mb An auto refresh mode is provided along with a power-saving DDR SDRAM effectively consists of a single 2n-bit wide, one Power Down mode. All inputs are compatible with the JEDEC clock cycle data transfer at the internal DRAM core and two Standard for SSTL_2. All outputs are SSTL_2, Class II com- corresponding n-bit wide, one-half-clock-cycle data transfers patible. at the I/O pins. The functionality described and the timing specifications A bidirectional data strobe (DQS) is transmitted externally, included in this data sheet are for the DLL Enabled mode along with data, for use in data capture at the receiver. DQS of operation. is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS is edge- aligned with data for Reads and center-aligned with data for Writes. The 256Mb DDR SDRAM operates from a differential clock (CK and CK; the crossing of CK going high and CK going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to the DDR SDRAM are burst ori- ented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write com- mand. The address bits registered coincident with the Active command are used to select the bank and row to be accessed. The address bits registered coincident with the Read or Write command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations. An Auto Precharge func- REV 1.1 1 04/2003 © NANYA TECHNOLOGY CORP. All rights reserved. NT5DS64M4BT NT5DS64M4BF NT5DS32M8BT NT5DS32M8BF NT5DS16M16BT NT5DS16M16BF 256Mb DDR SDRAM Pin Configuration - 400mil TSOP II (x4 / x8 / x16) V V V V DD DD V DD 1 66 V SS SS SS NC DQ0 DQ0 2 65 DQ15 DQ7 NC V V V V DDQ DDQ VDDQ 3 64 V SSQ SSQ SSQ NC NC DQ1 4 63 DQ14 NC NC DQ0 DQ1 DQ2 5 62 DQ13 DQ6 DQ3 V V V V SSQ SSQ VSSQ 6 61 V DDQ DDQ DDQ NC NC DQ3 7 60 DQ12 NC NC NC DQ2 DQ4 8 59 DQ11 DQ5 NC V V V V DDQ DDQ VDDQ 9 58 V SSQ SSQ SSQ NC NC DQ5 10 57 DQ10 NC NC DQ1 DQ3 DQ6 11 56 DQ9 DQ4 DQ2 V V V V SSQ SSQ VSSQ 12 55 V DDQ DDQ DDQ NC NC DQ7 13 54 DQ8 NC NC NC NC NC 14 53 NC NC NC V V V VDDQ DDQ VDDQ 15 52 V SSQ SSQ SSQ NC NC LDQS 16 51 UDQS DQS DQS NC NC NC 17 50 NC NC NC V V V V DD DD VDD 18 49 V REF REF REF NU NU V V NU 19 48 V SS SS SS NC NC LDM* 20 47 UDM* DM* DM* WE WE WE 21 46 CK CK CK CAS CAS CAS 22 45 CK CK CK RAS RAS RAS 23 44 CKE CKE CKE CS CS CS 24 43 NC NC NC NC NC NC 25 42 A12 A12 A12 BA0 BA0 BA0 26 41 A11 A11 A11 BA1 BA1 BA1 27 40 A9 A9 A9 A10/AP A10/AP A10/AP 28 39 A8 A8 A8 A0 A0 A0 29 38 A7 A7 A7 A1 A1 A1 30 37 A6 A6 A6 A2 A2 A2 31 36 A5 A5 A5 A3 A3 A3 32 35 A4 A4 A4 V V V V DD DD V DD 33 34 V SS SS SS 66-pin Plastic TSOP-II 400mil 16Mb x 16 32Mb x 8 64Mb x 4 Column Address Table Organization Column Address 64Mb x 4 A0-A9, A11 32Mb x 8 A0-A9 16Mb x 16 A0-A8 *DM is internally loaded to match DQ and DQS identically. REV 1.1 2 04/2003 © NANYA TECHNOLOGY CORP. All rights reserved. NT5DS64M4BT NT5DS64M4BF NT5DS32M8BT NT5DS32M8BF NT5DS16M16BT NT5DS16M16BF 256Mb DDR SDRAM Pin Configuration - 60 balls 0.8mmx1.0mm Pitch CSP Package <Top View > See the balls through the package. 64 X 4 1 2 3 7 8 9 VSSQ NC VSS A VDD NC VDDQ NC VDDQ DQ3 B DQ0 VSSQ NC NC VSSQ NC C NC VDDQ NC NC VDDQ DQ2 D DQ1 VSSQ NC NC VSSQ DQS E QFC VDDQ NC VREF VSS DQM F NC VDD NC CLK CLK G WE CAS A12 CKE H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 32 X 8 1 2 3 7 8 9 VSSQ DQ7 VSS A VDD DQ0 VDDQ NC VDDQ DQ6 B DQ1 VSSQ NC NC VSSQ DQ5 C DQ2 VDDQ NC NC VDDQ DQ4 D DQ3 VSSQ NC NC VSSQ DQS E QFC VDDQ NC VREF VSS DQM F NC VDD NC CLK CLK G WE CAS A12 CKE H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 REV 1.1 3 04/2003 © NANYA TECHNOLOGY CORP. All rights reserved. NT5DS64M4BT NT5DS64M4BF NT5DS32M8BT NT5DS32M8BF NT5DS16M16BT NT5DS16M16BF 256Mb DDR SDRAM Pin Configuration - 60 balls 0.8mmx1.0mm Pitch CSP Package <Top View > See the balls through the package. 16 X 16 1 2 3 7 8 9 VSSQ DQ15 VSS A VDD DQ0 VDDQ DQ14 VDDQ DQ13 B DQ2 VSSQ DQ1 DQ12 VSSQ DQ11 C DQ4 VDDQ DQ3 DQ10 VDDQ DQ9 D DQ6 VSSQ DQ5 DQ8 VSSQ DQS E LDQS VDDQ DQ7 VREF VSS DQM F LDW VDD NC CLK CLK G WE CAS A12 CKE H RAS CS A11 A9 J BA1 BA0 A8 A7 K A0 A10/AP A6 A5 L A2 A1 A4 VSS M VDD A3 REV 1.1 4 04/2003 © NANYA TECHNOLOGY CORP. All rights reserved. NT5DS64M4BT NT5DS64M4BF NT5DS32M8BT NT5DS32M8BF NT5DS16M16BT NT5DS16M16BF 256Mb DDR SDRAM Input/Output Functional Description Symbol Type Function Clock: CK and CK are differential clock inputs. All address and control input signals are sampled CK, CK Input on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is refer- enced to the crossings of CK and CK (both directions of crossing). Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power Down and Self Refresh operation (all banks idle), or Active Power Down (row Active in any bank). CKE is syn- chronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self CKE, CKE0, CKE1 Input refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK and CKE are disabled during Power Down. Input buffers, excluding CKE, are disabled during self refresh. The standard pinout includes one CKE pin. Optional pinouts might include CKE1 on a different pin, in addition to CKE0, to facilitate independent power down control of stacked devices. Chip Select: All commands are masked when CS is registered high. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. The CS, CS0, CS1 Input standard pinout includes one CS pin. Optional pinouts might include CS1 on a different pin, in addition to CS0, to allow upper or lower deck selection on stacked devices.
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