Indium-Carrier Minerals in Polymetallic Sulphide Ore Deposits
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Indium, Caesium Or Cerium Compounds for Treatment of Cerebral Disorders
Europaisches Patentamt 298 644 J European Patent Office Oy Publication number: 0 A3 Office europeen des brevets EUROPEAN PATENT APPLICATION © Application number: 88305895.0 © intci.s A61K 31/20, A61K 31/28, A61K 33/24 @ Date of filing: 29.06.88 © Priority: 07.07.87 GB 8715914 © Applicant: EFAMOL HOLDINGS PLC Efamol House Woodbridge Meadows © Date of publication of application: Guildford Surrey GU1 1BA(GB) 11.01.89 Bulletin 89/02 @ Inventor: Horrobin, David Frederick © Designated Contracting States: c/o Efamol House Woodbridge Meadows AT BE CH DE ES FR GB GR IT LI LU NL SE Guildford Surrey GU1 1BA(GB) Inventor: Corrigan, Frank ® Date of deferred publication of the search report: c/o Argyll & Bute Hospital 14.11.90 Bulletin 90/46 Lochgilphead, Argyll PA3T 8ED Scotland(GB) © Representative: Caro, William Egerton et al J. MILLER & CO. Lincoln House 296-302 High Holborn London WC1V 7 JH(GB) © Indium, caesium or cerium compounds for treatment of cerebral disorders. © A method of treatment of schizophrenia or other chronic cerebral disorder in which cerebral atrophy is shown, is characterised in that one or more as- similable or pharmaceutically acceptable indium caesium or cerium compounds is associated with a pharmaceutically acceptable diluent or carrier. CO < CD 00 O> Xerox Copy Centre PARTIAL EUROPEAN SEARCH REPORT Application number European Patent J which under Rule 45 of the European Patent Convention Office shall be considered, for the purposes of subsequent EP 88 30 5895 proceedings, as the European search report DOCUMENTS CONSIDERED TO BE RELEVANT Citation of document with indication, where appropriate, Relevant CLASSIFICATION OF THE ategory of relevant passages to claim APPLICATION (Int. -
The Infrared Spectrum of Indium in Silicon Revisited A
The infrared spectrum of indium in silicon revisited A. Tardella, B. Pajot To cite this version: A. Tardella, B. Pajot. The infrared spectrum of indium in silicon revisited. Journal de Physique, 1982, 43 (12), pp.1789-1795. 10.1051/jphys:0198200430120178900. jpa-00209562 HAL Id: jpa-00209562 https://hal.archives-ouvertes.fr/jpa-00209562 Submitted on 1 Jan 1982 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. J. Physique 43 (1982) 1789-1795 DTCEMBRE 1982, 1789 Classification Physics Abstracts 71.55 - 78.50 The infrared spectrum of indium in silicon revisited A. Tardella and B. Pajot Groupe de Physique des Solides de l’Ecole Normale Supérieure, Université Paris VII, Tour 23, 2, place Jussieu, 75251 Paris Cedex 05, France (Reçu le 27 mai 1982, révisé le 22 juillet, accepté le 23 août 1982) Résumé. 2014 Le spectre d’absorption de l’indium dans le silicium a été mesuré dans des conditions où l’élargisse- ment des raies par effet de concentration est négligeable. Avec une résolution appropriée, on détecte 17 transitions et les composantes d’un doublet serré sont attribuées à deux transitions calculées. A 6 K, la largeur intrinsèque des raies varie de 2,6 à 0,8 cm-1, ce qui indique un effet lié à la structure de la bande de valence du silicium. -
Soldering to Gold Films
Soldering to Gold Films THE IMPORTANCE OF LEAD-INDIUM ALLOYS Frederick G. Yost Sandia Laboratories, Albuquerque, New Mexico, U.S.A. Reliable solder joints can be made on gold metallised microcircuits using lead-indium solders providing certain important conditions are understood and carefully controlled. This paper reviews the three fundamental concepts of scavenging, wetting, and ageing, which are relevant when soldering to gold films. Alloys containing indium have been used for solder- sition and a body centred tetragonal space lattice. ing electronic components to thin gold films and wires Although considerable work has been addressed for at least 14 years. Braun (1, 2) investigated the to the question of clustering and phase separation potential of several multicomponent alloys based in the a field below 20°C (7, 8, 9) the practical signifi- upon the lead-tin-indium ternary alloy system. cance of this phenomenon has not yet materialised. More recently, work on lead-indium binary alloys The most commonly used alloy is the 50 weight has been reported by Jackson (3) and Yost, et al per cent indium composition which has a liquidus (4, 5, 6). In this paper we intend to define, to discuss, temperature of approximately 210°C and a solidus and to illustrate three fundamental concepts relevant temperature of approximately 185°C. Alloys in the to soldering to gold films using lead-indium solders. lead rich phase field, a, freeze dendritically by The lead-indium phase diagram, shown in Figure forming lead rich stalks. The formation of these 1, contains a wealth of useful solder alloys having dendrites causes a surface rumpling which gives the solidus temperatures which range from 156.6°C solder surface a somewhat frosty rather than a shiny (pure indium) to 327.5 °C (pure lead). -
Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe. -
Periodic Table 1 Periodic Table
Periodic table 1 Periodic table This article is about the table used in chemistry. For other uses, see Periodic table (disambiguation). The periodic table is a tabular arrangement of the chemical elements, organized on the basis of their atomic numbers (numbers of protons in the nucleus), electron configurations , and recurring chemical properties. Elements are presented in order of increasing atomic number, which is typically listed with the chemical symbol in each box. The standard form of the table consists of a grid of elements laid out in 18 columns and 7 Standard 18-column form of the periodic table. For the color legend, see section Layout, rows, with a double row of elements under the larger table. below that. The table can also be deconstructed into four rectangular blocks: the s-block to the left, the p-block to the right, the d-block in the middle, and the f-block below that. The rows of the table are called periods; the columns are called groups, with some of these having names such as halogens or noble gases. Since, by definition, a periodic table incorporates recurring trends, any such table can be used to derive relationships between the properties of the elements and predict the properties of new, yet to be discovered or synthesized, elements. As a result, a periodic table—whether in the standard form or some other variant—provides a useful framework for analyzing chemical behavior, and such tables are widely used in chemistry and other sciences. Although precursors exist, Dmitri Mendeleev is generally credited with the publication, in 1869, of the first widely recognized periodic table. -
Structures of Bulk Hexagonal Post-Transition-Metal Chalcogenides from Dispersion-Corrected Density-Functional Theory
Structures of bulk hexagonal post-transition-metal chalcogenides from dispersion-corrected density-functional theory S. J. Magorrian National Graphene Institute, University of Manchester, Booth Street East, Manchester M13 9PL, United Kingdom V. Z´olyomi Hartree Centre, STFC Daresbury Laboratory, Daresbury WA4 4AD, United Kingdom N. D. Drummond Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom (Dated: March 31, 2021) We use dispersion-corrected density-functional theory to determine the relative energies of com- peting polytypes of bulk layered hexagonal post-transition-metal chalcogenides, to search for the most stable structures of these potentially technologically important semiconductors. We show that there is some degree of consensus among dispersion-corrected exchange-correlation functionals re- garding the energetic orderings of polytypes, but we find that for each material there are multiple stacking orders with relative energies of less than 1 meV per monolayer unit cell, implying that stacking faults are expected to be abundant in all post-transition-metal chalcogenides. By fitting a simple model to all our energy data, we predict that the most stable hexagonal structure has P63/mmc space group in each case, but that the stacking order differs between GaS, GaSe, GaTe, and InS on the one hand and InSe and InTe on the other. At zero pressure, the relative energies obtained with different functionals disagree by around 1{5 meV per monolayer unit cell, which is not sufficient to identify the most stable structure unambiguously; however, multi-GPa pressures reduce the number of competing phases significantly. At higher pressures, an AB0-stacked structure of the most stable monolayer polytype is found to be the most stable bulk structure; this structure has not been reported in experiments thus far. -
Highly Selective and Rapid Uptake of Radionuclide Cesium
Article pubs.acs.org/cm Highly Selective and Rapid Uptake of Radionuclide Cesium Based on Robust Zeolitic Chalcogenide via Stepwise Ion-Exchange Strategy † † † † † † † Huajun Yang, Min Luo, Li Luo, Hongxiang Wang, Dandan Hu, Jian Lin, Xiang Wang, ‡ ‡ § ⊥ † Yanlong Wang, Shuao Wang, Xianhui Bu,*, Pingyun Feng,*, and Tao Wu*, † College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Jiangsu 215123, China ‡ School for Radiological and Interdisciplinary Sciences (RAD-X), Soochow University, Jiangsu 215123, China § Department of Chemistry and Biochemistry, California State University Long Beach, 1250 Bellflower Boulevard, Long Beach, California 90840, United States ⊥ Department of Chemistry, University of California, Riverside, Riverside, California 92521, United States *S Supporting Information ABSTRACT: The safe use of nuclear energy requires the development of advanced adsorbent technology to address environment damage from nuclear waste or accidental release of radionuclides. Recently developed amine-directed chalcogenide frameworks have intrinsic advantages as ion-exchange materials to capture radionuclides, because their exceptionally negative framework charge can lead to high cation-uptake capacity and their 3-D multidimensional intersecting channel promotes rapid ion diffusion and offer a unique kinetic advantage. Prior to this work, however, such advantages could not be realized because organic cations in the as-synthesized materials are sluggish during ion exchange. Here we report an ingenious approach on the activation of amine- directed zeolitic chalcogenides through a stepwise ion-exchange strategy and their use in cesium adsorption. The activated porous chalcogenide exhibits highly enhanced cesium uptake compared to the pristine form and is comparable to the best metal chalcogenide sorbents so far. Further ion-exchange experiments in the presence of competing ions confirm the high selectivity for cesium ions. -
INDALLOY CONTAINING INDIUM with TIN, LEAD, SILVER, COPPER.Rtf
MSDS - IN 009 INDALLOY CONTAINING INDIUM WITH TIN, LEAD OR SILVER OR COPPER INDIUM CORPORATION OF AMERICA ®\EUROPE \ASIA-PACIFIC INDIUM CORPORATION (SUZHOU) SAFETY DATA SHEET This material safety data sheet represents a family grouping of all metal mixes that contain indium metal. A table is provided at the end that lists all metal groupings. 1. PRODUCT AND COMPANY IDENTIFICATION Product Identifier: INDALLOY CONTAINING INDIUM WITH TIN, LEAD, SILVER, COPPER MSDS Number: MSDS-IN 009 Revised Date: 11 JUNE 2012 Product Use: INDUSTRIAL USE - METAL ALLOY CONSISTING OF INDIUM MIXED WITH ONLY TIN AND/OR, LEAD AND/OR SILVER AND/OR COPPER. SEE TABLE FOR VARIOUS MIX PERCENTAGES. MANUFACTURER: In America: EMERGENCY PHONE: The Indium Corporation of America CHEMTREC 24 hrs. 1676 Lincoln Ave., Utica NY 13502 USA: 1 (800) 424-9300 Information: (315) 853-4900 Outside USA: +1 (703) 527-3887 [email protected] In Europe: In China: Indium Corporation of Europe Indium Corporation (Suzhou), Co. Ltd. 7 Newmarket Ct. No. 428 Xinglong Street Kingston, Milton Keynes, UK, MK 10 OAG Suzhou Industrial Park Information: +44 [0] 1908 580400 Suchun Industrial Square Unit No. 14-C Jiangsu Province, China 215126 Information: (86) 512-6283-4900 In Asia: Asia-Pacific Operations-Singapore 29 Kian Teck Avenue Singapore 628908 Information: +65 6268-8678 Page 1 of 12 MSDS - IN 009 INDALLOY CONTAINING INDIUM WITH TIN, LEAD OR SILVER OR COPPER 2. HAZARDS IDENTIFICATION lead containing products Signal Word: Warning Hazard statement(s) H303 May be harmful if swallowed H315 Causes -
Indium Article2
A Study of Indium/Lead Solders Karl Seelig AIM Cranston, Rhode Island Indium/Lead Solders on Gold Because they do not leach or dissolve gold as readily as tin/lead solders, indium/lead solders are recommended for soldering to gold. As seen in fig. 1, the phase diagrams of tin/gold shows that tin dissolves approximately 18 percent by weight of gold at soldering temperatures of 225-250°C.1 Under the same conditions the indium/gold phase diagram shows dissolution of only 2 to 4 percent of gold in indium. Thus, with a substantial reduction in the dissolution of gold, less intermetallics are formed and improved solder flow over the gold surface occurs. Tin/lead soldering of gold is possible if the layer of gold is sufficiently thin (1.27 µm (50 µin) or less) to allow dipping in a pre-solder to remove the gold. However, if this does not occur then there is a high probability of solder joint failure. Immediately after soldering, a neat solder joint will be observed and it will pass electrical test. However, over time the tin will dissolve the gold by solid state diffusion and leave an opening in the electrical contact. For the above reasons, whenever possible an indium/lead solder should be used on a gold alloy. If indium/lead cannot be used due to either environmental reasons or temperature conditions, it is recommended to use a gold/tin alloy. The two gold/tin alloys that are Fig. 1 commonly used are the Sn90/Au80 217°C eutectic and the Au80/Sn20 280°C eutectic. -
Synthesis, Crystal Lattices and Some Electrical Properties of Indium Tellurides and Selenides
MINERALOGICAL JOURNAL, VOL. 2, No. 2, pp. 63-77, JUNE, 1957 SYNTHESIS, CRYSTAL LATTICES AND SOME ELECTRICAL PROPERTIES OF INDIUM TELLURIDES AND SELENIDES SUEZO SUGAIKE Matsuda Research Laboratory, Tokyo Shibaura Electric Company ABSTRACT The crystals of indium tellurides and selenides, InTe, In2Te3, InTe3, InSe and In2Se3, have been synthesized by the double-furnace technique and their crystal lattices have been characterized by X-ray single crystal examinations. From the results of their electrical conductivity measurements it has been found that all of them are semiconductors, In2Te3 and InSe being poorly con ductive with some ionic character, InTe, InTe3 and In2Se3 having rather higher conductivities of order of 1-1•~102 (ƒ¶ cm)-1 at room temperature, and that In2Se3 shows a peculiar phase transition at 200•Ž. The lattice symmetries of these compounds have been compared with those of other III b metal chal cogenides. Introduction The chalcogenides of the III b metals in the periodic table have first been studied by W. Klemm and H.U. von Vogel8) in 1934. Although the majority of the compounds have been investigated crystallogra phically by H. Hahn2) 5) and by S. Schubert16), the data on InTe3 and InSe are missing yet. From the crystal-chemical view-point it will be interesting to see the similarity as well as difference of the properties of In2Se3 and In2Te3. The electronegativity differences ƒ¢x of indium decrease gradually from 1.2 against sulphur, to 1.1 against selenium and 0.8 against tellurium. These small values of ƒ¢x suggest, according to Pauling's theory14), their indium compounds to be valence crystals or semiconductors, with the smallness of ƒ¢x indicating the maximum amount (to the extent of 20%) of ionic character of the bonds. -
Agenda 10/25/2017 Slip Quiz - Last One in This Booklet
Agenda 10/25/2017 Slip quiz - Last one in this booklet Turn in homework notes The Modern Periodic Table - Pointing Out Patterns Main Groups - (Group 1 Demonstration) Group 2 - students can do Periodic table - cut and stick activity Element research project + poster Slip Quiz - You may refer to your notes from the video. 1) Name 2 elements that can be added to iron and carbon to make special steels with special properties. 2) Which 3 elements are found in “Field’s metal”? What are their symbols and atomic numbers? Slip Quiz - You may refer to your notes from the video. 1) Name 2 elements that can be added to iron and carbon to make special steels with special properties. 2 from niobium, nickel, chromium, manganese, or aluminum. 2) Which 3 elements are found in “Field’s metal”? What are their symbols and atomic numbers? Slip Quiz - You may refer to your notes from the video. 2) Which 3 elements are found in “Field’s metal”? What are their symbols and atomic numbers? Indium In atomic number = 49 Tin Sn atomic number = 50 Bismuth Bi atomic number = 83 Turn in the “The Modern Periodic Table” Sheet with notes from video and your Metallic Bonding notes Periodic Table - Patterns and Useful Classifications Periods - go across the periodic table - rows Row 1 has 2 elements 1 Periods - go across the periodic table - rows Row 2 has 8 elements (2.8. 2 Periods - go across the periodic table - rows 8 elements (2.8.8. 3 Periods - go across the periodic table - rows 18 elements (2.8.8.18 4 Periods - go across the periodic table - rows 18 elements (2.8.8.18.18. -
Intermetallic Reaction of Indium and Silver in an Electroplating Process
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Springer - Publisher Connector Journal of ELECTRONIC MATERIALS, Vol. 38, No. 9, 2009 Regular Issue Paper DOI: 10.1007/s11664-009-0845-9 Ó 2009 The Author(s). This article is published with open access at Springerlink.com Intermetallic Reaction of Indium and Silver in an Electroplating Process PIN J. WANG,1,2 JONG S. KIM,1 and CHIN C. LEE1 1.—Electrical Engineering and Computer Science, Materials and Manufacturing Technology, University of California, Irvine, CA 92697-2660, USA. 2.—e-mail: [email protected] The reaction of indium (In) and silver (Ag) during the electroplating process of indium over a thick silver layer was investigated. It was found that the plated In atoms react with Ag to form AgIn2 intermetallic compounds at room tem- perature. Indium is commonly used in the electronics industry to bond delicate devices due to its low yield strength and low melting temperature. In this study, copper (Cu) substrates were electroplated with a 60-lm-thick Ag layer, followed by electroplating an In layer with a thickness of 5 lmor10lm, at room temperature. To investigate the chemical reaction between In and Ag, the microstructure and composition on the surface and the cross section of samples were observed by scanning electron microscopy (SEM) with energy- dispersive x-ray spectroscopy (EDX). The x-ray diffraction method (XRD) was also employed for phase identification. It was clear that indium atoms reacted with underlying Ag to form AgIn2 during the plating process. After the sample was stored at room temperature in air for 1 day, AgIn2 grew to 5 lmin thickness.