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(12) Patent Application Publication (10) Pub. No.: US 2013/0264526 A1 Cao Et Al US 20130264526A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2013/0264526 A1 Cao et al. (43) Pub. Date: Oct. 10, 2013 (54) MOLECULAR PRECURSORS AND Related U.S. Application Data PROCESSES FOR PREPARING COPPER (60) Provisional application No. 61/419,355, filed on Dec. SN(SSSIFIDEASELENIDE 3, 2010, provisional application No. 61/419,351, filed on Dec. 3, 2010. (75) Inventors: Yanyan Cao, Wilmington, DE (US); John W. Catron, JR., Smyrna, DE (US); Lynda Kaye Johnson, Wilmington, DE PublicationDCOSSO Classificati (US); Meijun Lu, Hockessin, DE (US); (51) Int. Cl. Irina Malaj ovich, Swarthmore, PA HOIL 3L/0272 (2006.01) (US); Daniela Rodica Radu, Hockessin, (52) U.S. Cl DE (US) CPCAV e. we.................................. HOIL 31/0272 (2013.01) (73) Assignee: E I DUPONT DE NEMOURS AND USPC ....................................................... 252/.519.4 COMPANY, Wilmington, DE (US) 57 ABSTRACT (21) Appl. No.: 13/885,105 (57) This invention relates to molecular precursors and processes (22) PCT Filed: Dec. 1, 2011 for preparing coated Substrates and films of copper indium gallium sulfide/selenides (CIGS/Se). Such films are useful in (86). PCT No.: PCT/US2O11AO62847 the preparation of photovoltaic devices. This invention also S371 (c)(1), relates to processes for preparing coated Substrates and for (2), (4) Date: May 13, 2013 making photovoltaic devices. US 2013/0264526 A1 Oct. 10, 2013 MOLECULAR PRECURSORS AND salt-based precursors into photovoltaic devices has led to PROCESSES FOR PREPARING COPPER relatively low efficiencies, possibly due to chlorine- and oxy INDIUM GALLUMSULFIDEASELENIDE gen-based impurities. COATINGS AND FILMS 0007 CuInSea films have been formed from a solution of Cuand Innaphthenates, wherein the naphthenates are derived CROSS-REFERENCE TO RELATED from an acidic fraction of processed petroleum and are com APPLICATION posed of a mixture of organic acids. The solutions were spun coated onto substrates, which were then then treated with a 0001. This application claims priority to U.S. Provisional 10% mixture of hydrogen in nitrogen gas at 450° C. and then Application Nos. 61/419,351 filed Dec. 3, 2010 and 61/419, Selenized in vacuum-sealed ampoules with Se Vapor to give 355 filed Dec. 3, 2010 which are herein incorporated by coatings with a thickness of 250 nm. reference. 0008. The above molecular precursor routes rely on sulfo and seleno-ureas or thioacetamide as the chalcogen Source and/or annealing in reducing H., H2S, S-, or Se-containing FIELD OF THE INVENTION atmosphere for chalcogenization. A molecular precursor 0002 This invention relates to molecular precursors and approach to CIGS/Se involving the preparation of a solution processes for preparing coated Substrates and films of copper of copper and indium chalcogenides and elemental chalcogen indium gallium sulfide/selenides (CIGS/Se). Such films are has been reported. However, the use of hydrazine as the useful in the preparation of photovoltaic devices. This inven Solvent was required. Hydrazine is a highly reactive and tion also relates to processes for preparing coated Substrates potentially explosive solvent that is described in the Merck and for making photovoltaic devices. Index as a “violent poison. Single-source organometallic precursors to CIS/Se e.g., (Ph-P)Cu(mu-SEt). In(SEt) BACKGROUND have been prepared and used to form CIS/Se films via spray chemical vapor deposition. However, the synthesis of these I0003) Semiconductors with a composition of Cu(In Ga. single-source precursors is involved and limits the composi y)(SSea) where O<ys 1 and 0sXs2, collectively known as tional tuning of film Stoichiometry. In situ synthesis of films copper indium gallium sulfide/selenide or CIGS/Se, are some of CIS nanocrystals has been achieved by spin-coating buty of the most promising candidates for thin-film photovoltaic lamine solutions of indium acetate, copper chloride, thiourea, applications due to their unique structural and electrical prop and propionic acid onto a Substrate and heating at 250° C. erties as energy absorber materials. However, current Broad lines in the X-ray diffraction (XRD) analysis confirmed vacuum-based techniques to make CIGS/Se thin films (e.g., the nanocrystalline nature of the film. thermal evaporation, Sputtering) require complicated equip 0009 Hence, there still exists a need for molecular precur ment and therefore tend to be expensive. In addition, materi sor routes to CIGS/Se that involve simple, low-cost, scalable als are wasted by deposition on chamber walls, and signifi materials and processes with a low number of operations that cant energy is required to evaporate or sputter materials from provide high-quality, crystalline CIGS/Se films with tunable a source, often onto a heated Substrate. composition and morphology. There also exists a need for 0004. In contrast, solution-based processes to CIGS/Se low-temperature routes to CIGS/Se using solvents and are not only less expensive than vacuum-based processes, but reagents with relatively low toxicity. In addition, there is a typically have lower energy input and can utilize close to need for inks and processes to CIGS/Se that do not require 100% of the raw materials by precisely and directly deposit annealing in a reducing H., H2S, S-, or Se-containing atmo ing materials on a Substrate. In addition, Solution-based pro sphere, and for inks that can be coated in a single coating cesses are readily adaptable to high-throughput roll-to-roll operation to give films of suitable thickness for thin-film processing on flexible Substrates. photovoltaic devices. 0005 Solution-based processes to CIGS/Se fall into three SUMMARY general categories: (1) Electro-, electroless and chemical bath deposition, where (electro)chemical reactions in a solution 0010. One aspect of this invention is a molecular precursor lead to the coating of an immersed substrate; (2) Particulate to CIGS/Se comprising: based processes that use Solid particles dispersed in a solvent 0.011 i) a copper source selected from the group con to form an ink, which can be coated onto a Substrate; and (3) sisting of copper complexes of nitrogen-, oxygen-, car Processes that coat molecular precursor Solutions onto a Sub bon-, Sulfur-, or selenium-based organic ligands, copper strate by mechanical means such as spraying or spin coating. Sulfides, copper selenides, and mixtures thereof. In molecular precursor routes, the semiconductor can be Syn 0012 ii) an indium source selected from the group con thesized in situ with direct film deposition from solution. sisting of indium complexes of nitrogen-, oxygen-, car High-boiling capping agents, which often introduce carbon bon-, Sulfur-, or selenium-based organic ligands, indium based impurities into the semiconductor film, are used in Sulfides, indium selenides, and mixtures thereof. many particulate-based processes, but can be avoided in 0013 iii) optionally, a gallium source selected from the molecular precursor routes. group consisting of gallium complexes of nitrogen 0006 Molecular precursor routes to CIGS/Se have been reported using metal salts (e.g., chlorides and nitrates). For oxygen-, carbon-, Sulfur-, or selenium-based organic example, aqueous solutions of copper-, indium- and gallium ligands, gallium Sulfides, gallium selenides, and mix chlorides and an excess of thio- or selenourea have been tures thereof, and deposited via spray pyrolysis to give CIGS/Se. By mixing salt 0014 iv) a vehicle, comprising a liquid chalcogen com Solutions with binders or chelating agents, viscosity can be pound, a solvent, or a mixture thereof; increased and deposition techniques other than spraying can (0.015 provided that: be employed. However, these binders and chelating agents if the copper source is copper Sulfide or copper selenide, and often introduce carbon-based impurities into the CIGS/Se the indium source is indium sulfide or indium selenide, then film. In general, incorporation of CIGS/Se films made from the vehicle does not comprise hydrazine. US 2013/0264526 A1 Oct. 10, 2013 0016. Another aspect of this invention is a process com grain. A single grain can be composed of several crystals. A prising disposing a molecular precursor to CIGS/Se onto a useful method for obtaining grain size is electron microscopy. Substrate to form a coated Substrate, wherein molecular pre ASTM test methods are available for determining planar cursor comprises: grain size, that is, characterizing the two-dimensional grain 0017 i) a copper source selected from the group consist sections revealed by the sectioning plane. Manual grain size ing of copper complexes of nitrogen-, oxygen-, carbon-, Sul measurements are described in ASTM E112 (equiaxed grain fur-, or selenium-based organic ligands, copper sulfides, cop structures with a single size distribution) and E 1182 (speci per selenides, and mixtures thereof. mens with a bi-modal grain size distribution), while ASTME 0018 ii) an indium source selected from the group con 1382 describes how any grain size type or condition can be sisting of indium complexes of nitrogen-, oxygen-, carbon measured using image analysis methods. Sulfur-, or selenium-based organic ligands, indium Sulfides, 0031 Herein, element groups are represented using CAS indium selenides, and mixtures thereof; notation. As used herein, the term “chalcogen refers to 0019 iii) optionally, a gallium source selected from the Group VIA elements, and the terms “metal chalcogenides” or group consisting of gallium complexes of nitrogen-, oxygen “chalcogenides’
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