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About the Editor Fritz Scholz is a professor at the University of Greifswald in Germany. Following studies in chemistry at Humboldt University, Berlin, he obtained a Dr. rer. nat. and a Dr. sc. nat. (habilitation) from that same university. In 1987 and 1989, he worked with Alan Bond in Australia. His main interest is in electrochemistry and electroanalysis. He has published more than 250 scientific papers, and he is editor and co-author of the book “Electroanalytical Methods” (Springer 2002 and 2005; Russian Edition, BINOM 2006), co-author of the book “Electrochemistry of Immobilized Particles and Droplets” (Springer 2005), co-editor of the “Electrochemical Dictionary” (Springer 2008), and co-editor of volumes 7a and 7b of the “Encyclopedia of Electrochemistry” (Wiley-VCH 2006). In 1997, he founded the Journal of Solid State Electrochemistry (Springer) and has served as Editor-in-Chief since then. He served as editor of the series “Monographs in Electrochemistry” (Springer), in which modern topics of electrochemistry are presented. Scholz introduced the technique “Voltammetry of Immobilized Microparticles” for studying the electrochemistry of solid compounds and materi- als, and he introduced the concept of threephase electrodes to determine the Gibbs energies of ion transfer between immiscible liquids. M. Bouroushian, Electrochemistry of Metal Chalcogenides, Monographs 351 in Electrochemistry, DOI 10.1007/978-3-642-03967-6, C Springer-Verlag Berlin Heidelberg 2010 About the Author Mirtat Bouroushian received a PhD for the electrodeposition and characterization of binary and ternary selenides and tellurides, from the National Technical University of Athens (NTUA; Greece, 1998). He is currently Assistant Professor of Solid State Chemistry in the Chemical Engineering School of NTUA. His research activities apply on the electrosynthesis and photoelectrochemistry of semiconductors and the electrodeposition and characterization of metal–matrix composites. He is focused presently on the investigation of electrochemical nucleation/growth phenomena and interface charge transfer kinetics in connection with the photo-sensitization of porous titania electrodes by chalcogenide semiconductors. He has published sev- eral papers on the electrochemistry of II–VI chalcogenides and has participated in European and Greek research and educational projects. He is the author of a univer- sity textbook on solid-state chemistry and co-author of a general chemistry textbook for secondary school, as well as scientific articles for the public. 353 Index A CdTe solar cells, electrodeposited, Actinoid chalcogenides, 29–32 137–139 Advanced oxidation processes, 268 photoelectrochemistry, 218 Alloys, 6, 17–18, 22–24, 26, 37, 41, 45–47, Calcium chalcogenides, 29 49–51, 70, 77–80, 85, 106–108, Carbon, 3, 5–6, 10, 49, 71–72, 114, 116–117, 128, 169, 194, 233, 237, 310, 318, 188, 219, 268, 270, 310, 313–314, 320, 334–335 316–321, 325, 330–331, 342 Aluminum chalcogenides, 48–49 Cathodic electrodeposition, 78–84, 92, 94–95, Anodic alumina membranes (AAM), 190 98, 101, 104, 107, 122–123, 125, Anodization, 27, 84–85, 91, 128, 190 127–128, 130, 137, 156, 195, 258 Antimony chalcogenides, 128–132 Cationic clusters, 15 electrodeposition, 128–132 Cauliflower morphology, 96, 191 Arsenic, 44, 337, 339 Cerium chalcogenides, 29–32 Atomic layer epitaxy, 137, 155, 162–169, Cesium chalcogenides, 28–29 172–182 Chalcogenide amorphous, 8–9, 25–26 catalysts, 311–317 B cathodes, 326–329 Band edge pinning, 214 clusters, pseudo-ternary clusters, 310–311 Barium chalcogenides, 29 complexes, 17, 36 Beryllium chalcogenides, 29 glasses, 24–25, 337–339 Bismuth chalcogenides, 51–52 solid structures, 19–22 electrodeposition, 51 Chalcogenophosphates, 246, 328 Bismuth sulfide, 44, 51, 168, 262–263, 290 Chalcogens Photoelectrochemistry, 262–263, 290 hydrides, 12 Boron chalcogenides, 48–49 isotopes, 4 Brimstone (brennstein), 2 oxides, 12–14 oxoacids, 12–14 C physical and chemical properties, 10–16 Cadmium chalcogenides, 216–233 Chalconide ions, 11, 15–16, 84, 210 Cadmium selenide (CdSe) – electrodeposi- Chalcopyrites, 23, 42–45, 115–116, 251–256, tion, 216–233 282 photoelectrochemistry, 227 photoelectrochemistry, 252, 255 Cadmium sulfide (CdS) – electrodeposition, Charge density waves, 21, 34, 43 216–233 Chemical bath deposition, 27, 88, 106, 124, as a photocatalyst, 220 132–137, 287 photoelectrochemistry, 216, 227 Chemotronic components, 334 Cadmium telluride (CdTe) – electrodeposi- Chevrel phases, 24, 36, 38, 310–312, 316, tion, 216–233 319–320, 324, 330 355 356 Index Chromium chalcogenides, 35–37 G Citrate, 106, 114, 116–117 Gallium chalcogenides, 48–49 CO2 Photoreduction, 268–270 Galvanic displacement, 84–85, 112 Cobalt chalcogenides, 38–40 Gas diffusion electrode (GDE), 319–320 Colloidal systems, 180, 265–268 Germanium chalcogenides, 49–51 Colloid precipitation, 312 Gold chalcogenides, 41–44 Copper chalcogenides, 41–44 electrodeposition, 117 H Copper-Indium dichalcogenides, 115–119 Hafnium chalcogenides, 32–33 electrodeposition, 115–119 Heterogeneous photosynthesis, 263 photoelectrochemistry, 115 High power batteries, 330–335 Copper slime, 5–6 High-valence clusters, 18 Core/shell heterostructures, 268 2H-MoS2, 36, 327 Hydrogen evolution reaction (HER), 97, 116, D 264, 271, 282 Dilute magnetic semiconductors, 37 Directed growth, 187–188 I Dry processes, 27 Indium chalcogenides, 48–49 Dye-sensitized cells, 284, 286 electrodeposition, 48 Dye-sensitized heterojunctions, 285 photoelectrochemistry, 48 Intercalation (electrochemical), 21, 24, 36, E 322–324 Electrical switching, 25 Interfacial energetics, 214, 244 Electrocatalysts, 219–220, 265, 270, 274, Iodine/iodide redox couple, 210 309–310, 313–314, 316, 318–321 Ionic sensors, 25 Electrochemical atomic layer epitaxy Ion selective electrodes, 335–342 (ECALE), 137, 155, 157, 162–169, Iridium chalcogenides, 40–41 171, 173, 189, 194 Iron chalcogenides, 38–40 Electrochemical/chemical (E/C) synthesis, electrodeposition, 39 186, 196 Iron sulfides, 40, 42, 44, 120, Electrochemical step edge decoration (ESED), 248–251 196–198 photoelectrochemistry, 249–250 Electrode decomposition, 210–213, 217, 243, Isovalent alloys, 22, 46 259 Electrogenerated chemiluminescence, 341–342 L Electroless techniques, 84, 102 Lanthanoids, 18, 29–32 Energetic considerations for PEC, 213–216 Layered transition-metal dichalcogenides, Epitaxial films 238–248 growth, 154–155 electrodeposition, 240, 242 heteroepitaxy, 161 photoelectrochemistry, 238 homoepitaxy, 155 Lead chalcogenides, 49–51, on polycrystalline substrates, 159–160 124–128 on silicon, 160 electrodeposition, 125–128 Europium selenide electrodeposition, 132 photoelectrochemistry, 126 Liquid phase epitaxy (LPE), 155, 179 F Lithium batteries Fermi level pinning, 215, 225, 244 Li ion cell, 111, 325 Filtration membranes, 189–190 Li metal cell, 325 Fischer, W., 1–2 rechargeable, 324–326 Flat band potential measurement, 242, 246 thin film, 324–326 Flow batteries, 333 Lithium chalcogenides, 28–29 Fuel cells Lithium/sulfur batteries, 324–325 direct methanol (DMFC), 317 Localized growth, 187 PEM (proton exchange membrane), 310 Low-dimensional solids, 18 Index 357 M Photosensitization, 263, 287, 290 Magnesium chalcogenides, 29, 329–330 Platinum chalcogenides, 40–41 Manganese chalcogenides, 37–38 Polonium, 1, 4, 7–12, 19 Marcasite structure, 21, 39 Polychalcogenide electrolytes for PEC, 210, Mercury chalcogenides, 45–48, 106 228 oxidative growth (HgS), 90 Polychalcogenides Methanol crossover, 318 polyselenides, 15–16 Methanol tolerance, 310, 314–315, 319–320 polysulfides, 15–16 Mg ion batteries, 329 polytellurides, 15–16 Microbatteries, 326, 328–329 Porous anodic alumina (PAA), 190–193 Microgenerators, 326 Potassium chalcogenides, 28–29 Misfit layer chalcogenides, 24 Pourbaix diagrams, 58, 62–67, 85–86, 98, 113, Mismatch, crystallographic, 156, 167 118, 122, 124, 129, 259 Mismatch (misfit) tuning, 184 Pseudobinary systems, 23–24, 47, 106–109 Mixed valence, 30, 42, 49 P-type semiconductor photocathodes, 282 Molecular linkers (bifunctional), 289 Pulsed light assisted electrodeposition (PLAE), Molten salt (electrolytes), 68, 83, 330 180–181 Molybdenum chalcogenides, 35–37, 110–112 Pulse electrolysis, 85 electrodeposition, 110–111 Pyrite, 3, 20–21, 37, 39–42, 120, 248–251, photoelectrochemistry, 110 280, 286, 316–317, 335 Multilayers, 26, 124, 129, 155, 162, 169–172, 233–235, 337 Q Multiple band gap PEC, 235 Quantum dots (QD or Q-dot), 154, 159–160, 182, 186–189, 194, 258, 262, N 285–292, 340, 342 Nanofibrils, 189 Quasi-rest potential, 79, 100 Nanoribbons, 195–198 Quasi-stability, 24–25 Nanotubules, 189 Nanowires, 154, 191–198, 268 R Nickel chalcogenides, 38–40 Rare earth chalcogenides, 30–31, 131–132 Niobium chalcogenides, 33–35 Redox chemistry, 210, 267 Nucleation-growth, 117 Rhenium chalcogenides, 37–38, 119–120 O Rhodium chalcogenides, 40–41 Onium cations, 11 3R-MoS2,35 Osmium chalcogenides, 40, 321 Room temperature ionic liquid (RTIL), 84, 93, Oxygen 331 depolarized electrolysis (ODP), 320–321 Rubidium chalcogenides, 28–29 evolution reaction (OER), 271, 273–274 Ruthenium chalcogenides, 40–41 redox reactions, 69 reduction reaction (ORR), 309–321 S Scandium chalcogenides, 29–32 P Selenium Palladium chalcogenides, 21, 41 allotropy, 7–8, 28 Phlogiston, 2–3 aqueous standard-formal potentials, 59–62 Photocatalysis, 46, 263–283 as a cathode, 334–335 Photodeposition, 180 electrochemistry, 71 Photoelectrochemical cells (PEC), 15–16, 46, production, 133 85, 88, 94, 96–97, 102, 107–108, properties, 70–71 110, 207–212, 216, 218–224, selenium–water
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    US 20130264526A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2013/0264526 A1 Cao et al. (43) Pub. Date: Oct. 10, 2013 (54) MOLECULAR PRECURSORS AND Related U.S. Application Data PROCESSES FOR PREPARING COPPER (60) Provisional application No. 61/419,355, filed on Dec. SN(SSSIFIDEASELENIDE 3, 2010, provisional application No. 61/419,351, filed on Dec. 3, 2010. (75) Inventors: Yanyan Cao, Wilmington, DE (US); John W. Catron, JR., Smyrna, DE (US); Lynda Kaye Johnson, Wilmington, DE PublicationDCOSSO Classificati (US); Meijun Lu, Hockessin, DE (US); (51) Int. Cl. Irina Malaj ovich, Swarthmore, PA HOIL 3L/0272 (2006.01) (US); Daniela Rodica Radu, Hockessin, (52) U.S. Cl DE (US) CPCAV e. we.................................. HOIL 31/0272 (2013.01) (73) Assignee: E I DUPONT DE NEMOURS AND USPC ....................................................... 252/.519.4 COMPANY, Wilmington, DE (US) 57 ABSTRACT (21) Appl. No.: 13/885,105 (57) This invention relates to molecular precursors and processes (22) PCT Filed: Dec. 1, 2011 for preparing coated Substrates and films of copper indium gallium sulfide/selenides (CIGS/Se). Such films are useful in (86). PCT No.: PCT/US2O11AO62847 the preparation of photovoltaic devices. This invention also S371 (c)(1), relates to processes for preparing coated Substrates and for (2), (4) Date: May 13, 2013 making photovoltaic devices. US 2013/0264526 A1 Oct. 10, 2013 MOLECULAR PRECURSORS AND salt-based precursors into photovoltaic devices has led to PROCESSES FOR PREPARING COPPER relatively low efficiencies, possibly due to chlorine- and oxy INDIUM GALLUMSULFIDEASELENIDE gen-based impurities. COATINGS AND FILMS 0007 CuInSea films have been formed from a solution of Cuand Innaphthenates, wherein the naphthenates are derived CROSS-REFERENCE TO RELATED from an acidic fraction of processed petroleum and are com APPLICATION posed of a mixture of organic acids.
  • 12.2% 130,000 155M Top 1% 154 5,300

    12.2% 130,000 155M Top 1% 154 5,300

    We are IntechOpen, the world’s leading publisher of Open Access books Built by scientists, for scientists 5,300 130,000 155M Open access books available International authors and editors Downloads Our authors are among the 154 TOP 1% 12.2% Countries delivered to most cited scientists Contributors from top 500 universities Selection of our books indexed in the Book Citation Index in Web of Science™ Core Collection (BKCI) Interested in publishing with us? Contact [email protected] Numbers displayed above are based on latest data collected. For more information visit www.intechopen.com Chapter Indium Chalcogenide Nanomaterials in the Forefront of Recent Technological Advancements Siphamandla C. Masikane and Neerish Revaprasadu Abstract In the last decade, there has been an increasing trend in the exploitation of indium chalcogenides in various applications which range from water splitting reactions in renewable energy to degradation of dyes in environmental rehabilita- tion. This trend is attributed to the interesting and unique properties of indium chalcogenide nanomaterials which can be easily tuned through a common approach: particle size, shape and morphology engineering. In this chapter, we outline the preferred attributes of indium chalcogenide nanomaterials which are deemed suitable for recent applications. Furthermore, we explore recent reaction protocols which have been reported to yield good quality indium chalcogenide nanomaterials of multinary configurations, e.g. binary and ternary compounds, among others. Keywords: sulfide, selenide, telluride, multinary, applications 1. Introduction Over the years, there has been an increasing demand on state-of-art solutions to solve real world problems such as the energy crises and efficient early-detection protocols in biomedical services.
  • Hydrothermal Studies on Mineral Replacement Reaction in the Gold-Silver-Tellurium and Copper-Iron-Sulphur Systems

    Hydrothermal Studies on Mineral Replacement Reaction in the Gold-Silver-Tellurium and Copper-Iron-Sulphur Systems

    HYDROTHERMAL STUDIES ON MINERAL REPLACEMENT REACTIONS IN THE GOLD-SILVER- TELLURIUM AND COPPER-IRON-SULFR SYSTEMS JING ZHAO !" !#$% &'"( "%" !) " *+$# , ) " )#" TABLE OF CONTENTS ABSTRACT .............................................................................................................................. v DECLARATION .................................................................................................................. vii ACKNOWLEDGEMENTS .................................................................................................. ix CHAPTER 1INTRODUCTION .......................................................................................... 1 1.1 Mineral replacement reaction and coupled dissolution reprecipitation mechanism ......... 4 1.1.1 Pseudomorphism .................................................................................................................. 8 1.1.2 Porosity and fine cracks .................................................................................................... 10 1.2 Mineral replacement reactions among gold-(silver)-tellurides ....................................... 13 1.3 Mineral replacement reactions among copper iron sulfides ........................................... 17 1.4 Research objects .............................................................................................................. 23 1.5 References ....................................................................................................................... 24 CHAPTER