(12) United States Patent (10) Patent No.: US 8,932,512 B2 Edler Et Al
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US008932512B2 (12) United States Patent (10) Patent No.: US 8,932,512 B2 Edler et al. (45) Date of Patent: Jan. 13, 2015 (54) POLYMERS HAVING A HIGH INFRARED (58) Field of Classification Search ABSORPTION CAPACITY CPC ............ B29C 65/14: CO8K7/16; C08K9/02; ). CO8K7/OO (75) inventors: Eagle. The Piner USPC ............. 524/432, 430, 440; 156/272: 216/65; inzmeier, Gross-Zimmern (DE) 264/405, 482, 494,492, 319; 523/200, (73) Assignee: Merck Patent GmbH, Darmstadt (DE) See application file for523/216; complete 106/417, search 441,history. 442, 455 (*) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 (56) References Cited U.S.C. 154(b) by 602 days. U.S. PATENT DOCUMENTS (21) Appl. No.: 12/063,817 4,702.964. A 10/1987 Hirano et al. 5,529,744 A * 6/1996 Tindale ......................... 264,532 (22) PCT Filed: Jul. 26, 2006 6,214,917 B1 * 4/2001 Linzmeier et al. ... 524/430 6,376,577 B2 * 4/2002 Kniess et al. ...... 523,215 (86). PCT No.: PCT/EP2006/007385 2005/02531 17 A1* 11/2005 Pfaffet al. ......... ... 252/SOO 2006/0024476 A1 2/2006 Leland et al. .. ... 428,137 S371 (c)(1), 2007/01294.75 A1* 6, 2007 Sakata et al. ....... ... 524,306 (2), (4) Date: Feb. 14, 2008 2007/0173581 A1* 7/2007 Hager et al. .................. 524/430 2007/O1997 29 A1 8/2007 Siegel (87) PCT Pub. No.: WO2007/019951 2007/0295689 A1* 12/2007 Clauss et al. .................... 216.65 PCT Pub. Date: Feb. 22, 2007 FOREIGN PATENT DOCUMENTS (65) Prior Publication Data DE 35 25545 A1 1, 1986 DE 238877 9, 1986 US 2010/O139855A1 Jun. 10, 2010 DE O238877 A1 9, 1986 O O WO WO 2005036563 A2 4, 2005 (30) Foreign Application Priority Data WO WO2O06042714 * 10/2005 Aug. 15, 2005 (DE) ......................... 10 2005038 774 * cited by examiner (51) Int. Cl. Primary Examiner — James J Seidleck B29C 65/14 (2006.01) Assistant Examiner — Deve E Valdez CSK 7/16 (2006.01) (74) Attorney, Agent, or Firm — Millen, White, Zelano & CSK 9/02 (2006.01) Branigan, P.C. CSK 700 (2006.01) CSK 3/22 (2006.01) (57) ABSTRACT CSK 3/30 (2006.01) The present invention relates to polymers comprising absorp (52) U.S. Cl. tion pigments, which are distinguished by the fact that they CPC. C08K9/02 (2013.01); C08K 3/22 (2013.01); have high absorption in the near IR region, and to the use C08K 3/30 (2013.01); B29C 65/1416 (2013.01) thereof, in particular in thermoforming and in IR light weld USPC ........... 264/405; 524/430; 524/440,523/200; ing. 523/216; 106/417: 106/441; 106/442; 106/455; 264/482; 264/494; 264/492; 264/319 22 Claims, 1 Drawing Sheet U.S. Patent Jan. 13, 2015 US 8,932,512 B2 Temperature behaviour of film under the influence of an IR emitter O 1OO 200 3OO 400 5OO 600 700 Time in Sec US 8,932,512 B2 1. 2 POLYMERS HAVINGA HIGH INFRARED region from 850 to 2500 nm, without changing the colour in ABSORPTION CAPACITY the visible region. Although the absorption pigment has very high absorption in the near IR, the pigment is itself virtually The present invention relates to polymers which are distin white and thus only influences the properties of the polymer, guished by the fact that they have high absorption in the near Such as colour and transparency, to an insignificant extent. IR region, and to the use thereof, in particular in thermoform Furthermore, the absorption pigment increases the thermal ing and in IR light welding. conductivity within the polymer matrix and accelerates poly The heating of plastics using IR radiation is widespread in merisation and curing processes. the area of thermoforming, Such as the deep drawing of plastic The invention therefore relates to polymers, preferably sheets and films, and the conditioning of preforms for stretch 10 thermoplastics, which comprise, as absorption pigment, pale blow moulding. However, this radiation is also employed for ortransparent particulate semiconductor materials or particu accelerating polymerisation and curing processes and the late Substrates coated with pale or transparent semiconductor welding of plastic parts. materials. The IR source used here are hot bodies which emit IR 15 Suitable pale or transparent semiconductor materials are radiation over a broad wavelength spectrum. The higher the preferably those which absorb in the near IR region, in par temperature of the radiating body, the higher also the emitted ticular in the region from 750 to 2500 nm. The particulate energy and the shorter the wavelength. The electromagnetic semiconductor materials are preferably spherical, needle spectrum of IR sources can be divided into three regions in shaped or flake-form particles or flake-form, spherical or accordance with their wavelength: needle-shaped Substrates coated with semiconductor materi als. The semiconductor materials are built up homogeneously IR type Wavelength (nm) Temperature C. from pale or transparent semiconductor materials or applied Short 1000-1500 1SOO-2700 as coating to a particulate Substrate. The semiconductor mate Moderate 1500-2SOO 750-1500 25 rials are preferably based on oxides and/or sulfides, such as, Long 3OOO-SOOO 200-7SO for example, indium oxide, antimony oxide, tin oxide, Zinc oxide, zinc sulfide, tin sulfide or mixtures thereof. More recent developments in emitter technology even Suitable semiconductor materials generally have particle reach wavelengths of up to 800 nm, i.e. as far as the region of sizes of 0.01 to 2000 um, preferably 0.1 to 100 um, in par visible light. 30 ticular 0.1 to 30 um. Since high-temperature emitters emit more energy, they The semiconductor materials either consist homoge represent the best heat source. However, most polymer neously of the said semiconductors or are particulate, prefer groups only exhibit good absorption in a range from 2900 to ably spherical, needle-shaped or flake-form substrates which 3700 and above 5500 nm. This means that the energy of very are mono- or multicoated with the said semiconductor mate effective high-temperature emitters cannot be utilised suffi 35 ciently for heating polymeric systems. rials. The substrates are preferably coated with only one layer. In the case of pigmented plastics, the situation is even more The substrates can be spherical, flake-form or needle complex, since the absorption and reflection of the pigment shaped. The shape of the particles is not crucial per se. In are now added. Black pigments have high absorption in the general, the particles have a diameter of 0.01-2000 um, par near infrared and therefore heat up very quickly in the short 40 ticularly 0.1-300 um and in particular 0.5-60 um. The particu wave IR. White pigments, by contrast, reflect visible light larly preferred substrates are spherical and flake-form sub very well, and this property is valid into the IR region. In the strates. Suitable flake-form substrates have a thickness case of pale colours, this results in a significant delay in between 0.02 and 5um, in particular between 0.1 and 4.5um. heating compared with black or dark colours. Owing to this The size in the two other dimensions is generally between 0.1 delay, it not only takes much longer until, for example, a pale 45 and 1000 um, preferably between 1 and 500 um and in par plastic sheet has reached the forming temperature necessary ticular between 1 and 60 um. for thermoforming, but the long dwell time may even result in The substrates are preferably natural or synthetic mica damage to the plastic Surface. flakes, SiO flakes, Al2O flakes, glass flakes, aluminium However, the absorption pigments known from the prior flakes, BiOCl flakes, SiO, beads, silica gel, kieselguhr, glass art, such as, for example, carbon black, all have the disadvan 50 beads, hollow glass beads, TiO, beads, polymer beads, for tage that they permanently colour the plastic. In addition, they example comprising polystyrene or polyamide, or TiO2 have to be added in comparatively high concentrations and needles, or mixtures of the said Substrates. are frequently toxicologically unacceptable. The coating of the particulate substrates with the semicon The object of the present invention was to find a pale or ductor materials is either known or can be carried out by white plastic colouring which simultaneously has good 55 processes known to the person skilled in the art. The sub absorption in the near infrared region and can be carried out in strates are preferably coated by hydrolysis of the correspond a simple manner. The absorber material must exhibit pro ing metal salts, such as, for example, metal chlorides or metal nounced absorption and an adequate reaction in this specific Sulfates, metal alkoxides or carboxylic acid salts in aqueous NIR region. or conventional solvent solution. The absorber here should be easy to incorporate into the 60 In the case of the semiconductors with a homogeneous polymer system, have high transparency and only be structure and also in the case of the Substrates coated with one employed in low concentrations. or more semiconductor materials, the semiconductor material Surprisingly, it has now been found that the addition of preferably has a microcrystalline structure. absorption pigments based on finely divided pale or transpar Particularly preferred absorption pigments are flake-form ent semiconductor materials gives a polymer system which 65 or spherical tin oxide, antimony oxide, indium tin oxide (ITO) has high absorption in the near IR, in particular in the region and mica flakes coated with ITO, tin oxide orantimony oxide, from 750 to >2500 nm, very particularly preferably in the and mixtures of the said oxides.