A Review on Van Der Waals Boron Nitride Quantum Dots
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Boron Nitride Substrates for High-Quality Graphene Electronics C
LETTERS PUBLISHED ONLINE: 22 AUGUST 2010 | DOI: 10.1038/NNANO.2010.172 Boron nitride substrates for high-quality graphene electronics C. R. Dean1,2*,A.F.Young3,I.Meric1,C.Lee4,5,L.Wang2,S.Sorgenfrei1,K.Watanabe6,T.Taniguchi6, P. Kim 3,K.L.Shepard1 and J. Hone2* Graphene devices on standard SiO2 substrates are highly disor- atomically planar surface should suppress rippling in graphene, dered, exhibiting characteristics that are far inferior to the which has been shown to mechanically conform to both corrugated expected intrinsic properties of graphene1–12. Although suspend- and flat substrates9,21. The dielectric properties of h-BN (e ≈ 3–4 ≈ 21 ing the graphene above the substrate leads to a substantial and Vbreakdown 0.7 V nm ) compare favourably with those of 13,14 improvement in device quality ,thisgeometryimposes SiO2, allowing the use of h-BN as an alternative gate dielectric with severe limitations on device architecture and functionality. no loss of functionality22. Moreover, the surface optical phonon There is a growing need, therefore, to identify dielectrics that modes of h-BN have energies two times larger than similar modes allow a substrate-supported geometry while retaining the in SiO2, suggesting the possibility of an improved high-temperature quality achieved with a suspended sample. Hexagonal boron and high-electric-field performance of h-BN based graphene devices nitride (h-BN) is an appealing substrate, because it has an atom- over those using typical oxide/ graphene stacks23,24. ically smooth surface that is relatively free of dangling bonds and To fabricate graphene-on-BN, we used a mechanical transfer charge traps. -
Reactions of Lithium Nitride with Some Unsaturated Organic Compounds. Perry S
Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 1963 Reactions of Lithium Nitride With Some Unsaturated Organic Compounds. Perry S. Mason Jr Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Mason, Perry S. Jr, "Reactions of Lithium Nitride With Some Unsaturated Organic Compounds." (1963). LSU Historical Dissertations and Theses. 898. https://digitalcommons.lsu.edu/gradschool_disstheses/898 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. This dissertation has been 64—5058 microfilmed exactly as received MASON, Jr., Perry S., 1938- REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS. Louisiana State University, Ph.D., 1963 Chemistry, organic University Microfilms, Inc., Ann Arbor, Michigan Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. REACTIONS OF LITHIUM NITRIDE WITH SOME UNSATURATED ORGANIC COMPOUNDS A Dissertation Submitted to the Graduate Faculty of the Louisiana State University and Agricultural and Mechanical College in partial fulfillment of the requireiaents for the degree of Doctor of Philosophy in The Department of Chemistry by Perry S. Mason, Jr. B. S., Harding College, 1959 August, 1963 Reproduced with permission of the copyright owner. Further reproduction prohibited without permission. -
High-Quality, Low-Cost Bulk Gallium Nitride Substrates
ADVANCED MANUFACTURING OFFICE High-Quality, Low- Cost Bulk Gallium Nitride Substrates Electrochemical Solution Growth: A Scalable Semiconductor Manufacturing Process The ever-growing demand in the past decade for more energy efficient solid-state lighting and electrical power conversion is leading to a higher demand for wide bandgap semiconductor-based devices, such as gallium nitride (GaN), over traditional silicon (Si)-based devices. High cost and limited availability, how- ever, have hindered the adoption of GaN substrates to date. When utilizing GaN, current LED and power electronic device applications employ GaN epitaxially grown on top of non-GaN substrates. The lattice mismatch between the epitaxial GaN layer and the non-native substrate surface leads to con- siderable stress and high defect densities, ultimately compromising device yield and Conceptual diagram of the ESG reactor. Photo courtesy of Sandia National Laboratories performance. While bulk growth of GaN can combat these issues, current growth methods for bulk GaN have not fostered widespread adoption to date due to lim- This project will help develop ESG into a viable GaN bulk growth process that is well ited scalability, low material quality, high suited for scalability to large-area wafer manufacturing. Bulk GaN is important to bol- operating temperatures and pressures, stering U.S. competitiveness in high-efficiency power electronics and solid-state lighting. and slow growth rates. A fundamentally different manufacturing route for bulk Benefits for Our Industry and Our Nation growth of GaN not driven by thermal pro- Scaling the ESG growth method to large area GaN crystals could reduce the production cesses is needed to provide an adequate cost of bulk GaN wafers by up to a factor of 10. -
Optimization of Wear Loss in Silicon Nitride (Si3n4)–Hexagonal Boron Nitride (Hbn) Composite Using Doe–Taguchi Method
Ghalme et al. SpringerPlus (2016) 5:1671 DOI 10.1186/s40064-016-3379-7 CASE STUDY Open Access Optimization of wear loss in silicon nitride (Si3N4)–hexagonal boron nitride (hBN) composite using DoE–Taguchi method Sachin Ghalme1,2*, Ankush Mankar3 and Y. J. Bhalerao4 *Correspondence: [email protected] Abstract 2 Mechanical Engineering Introduction: The contacting surfaces subjected to progressive loss of material Department, Manoharbhai Patel Institute of Engineering known as ‘wear,’ which is unavoidable between contacting surfaces. Similar kind of and Technology, Gondia, phenomenon observed in the human body in various joints where sliding/rolling Maharashtra, India contact takes place in contacting parts, leading to loss of material. This is a serious issue Full list of author information is available at the end of the related to replaced joint or artificial joint. article Case description: Out of the various material combinations proposed for artificial joint or joint replacement Si3N4 against Al2O3 is one of in ceramic on ceramic category. Minimizing the wear loss of Si3N4 is a prime requirement to avoid aseptic loosening of artificial joint and extending life of joint. Discussion and evaluation: In this paper, an attempt has been made to investigate the wear loss behavior of Si3N4–hBN composite and evaluate the effect of hBN addition in Si3N4 to minimize the wear loss. DoE–Taguchi technique is used to plan and analyze experiments. Conclusion: Analysis of experimental results proposes 15 N load and 8 % of hBN addi- tion in Si3N4 is optimum to minimize wear loss against alumina. Keywords: Silicon nitride (Si3N4), Hexagonal boron nitride (hBN), Alumina (Al2O3), Design of experiment (DoE), Taguchi technique Background Mechanical behavior of various machine elements, such as gears, cams, wheels, rails and sealing parts are influenced by the interaction between contact elements and surfaces. -
Ceramic Carbides: the Tough Guys of the Materials World
Ceramic Carbides: The Tough Guys of the Materials World by Paul Everitt and Ian Doggett, Technical Specialists, Goodfellow Ceramic and Glass Division c/o Goodfellow Corporation, Coraopolis, Pa. Silicon carbide (SiC) and boron carbide (B4C) are among the world’s hardest known materials and are used in a variety of demanding industrial applications, from blasting-equipment nozzles to space-based mirrors. But there is more to these “tough guys” of the materials world than hardness alone—these two ceramic carbides have a profile of properties that are valued in a wide range of applications and are worthy of consideration for new research and product design projects. Silicon Carbide Use of this high-density, high-strength material has evolved from mainly high-temperature applications to a host of engineering applications. Silicon carbide is characterized by: • High thermal conductivity • Low thermal expansion coefficient • Outstanding thermal shock resistance • Extreme hardness FIGURE 1: • Semiconductor properties Typical properties of silicon carbide • A refractive index greater than diamond (hot-pressed sheet) Chemical Resistance Although many people are familiar with the Acids, concentrated Good Acids, dilute Good general attributes of this advanced ceramic Alkalis Good-Poor (see Figure 1), an important and frequently Halogens Good-Poor overlooked consideration is that the properties Metals Fair of silicon carbide can be altered by varying the Electrical Properties final compaction method. These alterations can Dielectric constant 40 provide knowledgeable engineers with small Volume resistivity at 25°C (Ohm-cm) 103-105 adjustments in performance that can potentially make a significant difference in the functionality Mechanical Properties of a finished component. -
Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds
Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems KEY Naming Simple Ionic Compounds Name the following compounds: 1) KCl potassium chloride 2) MgI2 magnesium iodide 3) FeO iron (II) oxide 4) Fe2O3 iron (III) oxide 5) Cu3P copper (I) phosphide 6) SnSe2 tin (IV) selenide 7) TiBr3 titanium (III) bromide 8) GaAs gallium arsenide 9) BeF2 beryllium fluoride 10) Cs3N cesium nitride Write the formulas for the following compounds: 1) lithium iodide LiI 2) cobalt (III) oxide Co2O3 3) calcium fluoride CaF2 4) silver bromide AgBr 5) sodium hydride NaH 6) vanadium (V) sulfide V2S5 7) lead (II) nitride Pb3N2 8) titanium (II) selenide TiSe 9) manganese (VII) arsenide Mn3As7 10) gallium chloride GaCl3 ©2013, TESCCC 06/17/13 page 1 of 4 Chemistry HS/Science Unit: 05 Lesson: 01 Naming Compounds Practice Problems Naming Complex (polyatomic) Ionic Compounds Name the following compounds: 1) NH4Cl ammonium chloride 2) Fe(NO3)3 iron (III) nitrate 3) Pb(SO4)2 lead (IV) sulfate 4) Ag3PO4 silver phosphate 5) Be(HCO3)2 beryllium hydrogen carbonate 6) Al(CN)3 aluminum cyanide 7) Mn2(SO3)3 manganese (III) sulfite 8) Sr(C2H3O2)2 strontium acetate 9) Ti(CN)4 titanium (IV) cyanide 10) YClO3 yttrium chlorate Write the formulas for the following compounds: 1) lead (IV) sulfate Pb(SO4)2 2) silver cyanide AgCN 3) copper (II) chlorate Cu(ClO3)2 4) chromium (IV) phosphate Cr3(PO4)4 5) vanadium (IV) carbonate V(CO3)2 6) ammonium oxide (NH4)2O 7) tin (II) nitrite Sn(NO2)2 8) chromium (III) hydroxide Cr(OH)3 9) titanium (II) acetate Ti(C2H3O2)2 10) -
The Laser Generation Threshold Characteristics of a Colloidal Solution of Gold and Platinum Nanoparticles with Rodamine 6G
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Tomsk State University Repository 370 17th INTERNATIONAL CONFERENCE ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES EDM 2016 The Laser Generation Threshold Characteristics of a Colloidal Solution of Gold and Platinum Nanoparticles with Rodamine 6G Valeriy A. Donchenko1,2, Mikhail M. Zinoviev1, Alexey A. Zemlyanov2, Vladimir A. Kharenkov1,2, Anna N. Panamaryova3 1National Research Tomsk State University, Tomsk, Russia 2Siberian Physical Technical Institute, Tomsk, Russia 3 National Research Tomsk Polytechnic University, Tomsk, Russia Abstract – In the work the spectral-energy characteristics of or more orders greater than the density of the incident wave stochastic (non-resonator) laser generation of a thin layer of power. organic dye Rhodamine 6G solution with the addition of gold This increases the number of excited molecules within and platinum nanoparticles in the form of a colloidal solution these regions. Due to the Purcell effect [6-8] it is also in ethanol have been experimentally investigated. It has been experimentally established that the generation thresholds possible to increase the speed of active medium molecules are reduced by two orders when adding nanoparticles to the conversions from the excited level into the primary. As active medium. It is shown that the use of nanoparticles having a result, during the agitation action, a large number of a plasmon absorption band in the region of the agitation stimulated emissions of photons appear. This should lead to radiation does not lead to a significant change of the active a decrease in the generation and intensity of emission of the medium generation thresholds. -
A Review of the Use of Nanoparticle Tracking Analysis (NTA)
WHITEPAPER Nanoscale Material Characterization: a Review of the use of Nanoparticle Tracking Analysis (NTA) PARTICLE SIZE Summary PARTICLE This white paper describes the central role of high resolution particle size CONCENTRATION and concentration measurement nanoparticle research. The technique of FLUORESCENCE Nanoparticle Tracking Analysis (NTA) is described and compared to other DETECTION - DELETED characterization methodologies, and comparative papers are cited. A wide range of application studies is then summarized with specific reference to the use and value of NTA. For those seeking a full listing of NTA experience to date by application type, the NanoSight publication “Nanoparticle Tracking Analysis - A review of applications and usage 2010 - 2012, (Carr B and Wright M (2013)) and its successors provides a detailed catalogue. This item is available from your local Malvern Instruments representative or email [email protected]. Malvern Instruments Worldwide Sales and service centres in over 65 countries www.malvern.com/contact ©2017 Malvern Instruments Limited WHITEPAPER Introduction Nanoscale materials, in the form of nanoparticles, are playing an important and growing role across a range of different applications and industries which seek to exploit the unique properties exhibited by these materials, such as their very high surface area to volume ratio and high number. The overall properties and stability of many manufactured products often depends upon the ability to produce particle populations within fine tolerances, without contaminants or aggregates. The concentration of particles within a suspension is another factor that may have an effect upon the desired outcome of the product. It is clear then that there is a real need to characterize a variety of different properties when analyzing nanoparticles, in order to understand the relationship between the formulation and the overall bulk characteristics of the materials (Fedotov, 2011). -
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on Sio2
High-Quality Graphene and Hexagonal- Boron Nitride Transfers on SiO2 1 MELISSA HUYNH CHEMICAL ENGINEERING DEPARTMENT OF OREGON STATE UNIVERSITY DR. JUN JIAO, LESTER LAMPERT REU - PORTLAND STATE UNIVERSITY Overview 2 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Overview 3 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis 2D Materials 4 Graphene Zero overlap semimetal Durable Heat and electricity conductivity Hexagonal-Boron Nitride Similar properties to graphene Future Application 5 Biological engineering Optical Electronics Composite materials Super Capacitors/ Energy Storage Overview 6 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Growth 7 Chemical Vapor Deposition (CVD) Copper catalyst Vertical growth with furnace Methane, hydrogen, argon gases Transfer of Graphene 8 PMMA spin coat Ammonium Persulfate (APS) Rinse Heat Acetone bath Transfer of HBN 9 Copper foil APS Corral Pumps Polymer-Free Approach 10 Similar to H-BN Outflow: APS Inflow: DI H2O and Isopropyl Alcohol Overview 11 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Spectrum 12 D band G band D/g 2D Band 2D/G Ideal Spectrum HBN spectrum 13 1300-1400 range Weak readings Carbon contamination Ideal Spectrum Overview 14 Importance High- Results and Quality Methodology Interpretation Graphene & HBN Raman Analysis Graphene Analysis Grown at 830 ̊ C [edge] -
Interactions of Newly Synthesized Platinum Nanoparticles with ICR-191 and Their Potential Application
www.nature.com/scientificreports OPEN Interactions of newly synthesized platinum nanoparticles with ICR- 191 and their potential application Received: 26 November 2018 Agnieszka Borowik1, Rafal Banasiuk2, Natalia Derewonko3, Michal Rychlowski3, Accepted: 4 March 2019 Marta Krychowiak-Masnicka 2, Dariusz Wyrzykowski4, Magdalena Ziabka5, Published: xx xx xxxx Anna Woziwodzka1, Aleksandra Krolicka 2 & Jacek Piosik 1 One of the greatest challenges of modern medicine is to fnd cheaper and easier ways to produce transporters for biologically active substances, which will provide selective and efcient drug delivery to the target cells, while causing low toxicity towards healthy cells. Currently, metal-based nanoparticles are considered a successful and viable solution to this problem. In this work, we propose the use of novel synthesis method of platinum nanoparticles (PtNPs) connected with their precise biophysical characterization and assessment of their potential toxicity. To work as an efcient nanodelivery platform, nanoparticles should interact with the desired active compounds spontaneously and non-covalently. We investigated possible direct interactions of PtNPs with ICR-191, a model acridine mutagen with well-established biophysical properties and mutagenic activity, by Dynamic Light Scattering, fuorescence spectroscopy, and Isothermal Titration Calorimetry. Moreover, to determine the biological activity of ICR-191-PtNPs aggregates, we employed Ames mutagenicity test, eukaryotic cell line analysis and toxicity test against the model -
Controllable ALD Synthesis of Platinum Nanoparticles by Tuning
Journal of Physics D: Applied Physics PAPER Related content - Nucleation and growth process of atomic Controllable ALD synthesis of platinum layer deposition platinum nanoparticles on strontium titanate nanocuboids Chuandao Wang, Linhua Hu, Kenneth nanoparticles by tuning different synthesis Poeppelmeier et al. parameters - Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation To cite this article: Chuandao Wang et al 2017 J. Phys. D: Appl. Phys. 50 415301 Adriaan J M Mackus, Matthieu J Weber, Nick F W Thissen et al. - Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition View the article online for updates and enhancements. M J Weber, M A Verheijen, A A Bol et al. This content was downloaded from IP address 129.105.122.65 on 04/12/2017 at 17:10 IOP Journal of Physics D: Applied Physics Journal of Physics D: Applied Physics J. Phys. D: Appl. Phys. J. Phys. D: Appl. Phys. 50 (2017) 415301 (9pp) https://doi.org/10.1088/1361-6463/aa8709 50 Controllable ALD synthesis of platinum 2017 nanoparticles by tuning different synthesis © 2017 IOP Publishing Ltd parameters JPAPBE Chuandao Wang1,2,4, Linhua Hu2, Yuyuan Lin1,2, Kenneth Poeppelmeier2, Peter Stair2,3 and Laurence Marks1 415301 1 Department of Materials Science and Engineering, Northwestern University, 2220 North Campus Drive, Evanston, IL 602083108, United States of America C Wang et al 2 Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 602083113, United States of America 3 Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, United States of America Printed in the UK Email: [email protected] Received 17 July 2017, revised 11 August 2017 JPD Accepted for publication 18 August 2017 Published 15 September 2017 10.1088/1361-6463/aa8709 Abstract Pt nanoparticles were successfully deposited using three different atomic layer deposition (ALD) methods, e.g. -
Boron-Nitride-Datasheet-V1
A Unique Proposition for Industry The introduction of boron nitride into our stable of 2D materials widens the focus of delivering innovative solutions for industry Neill Ricketts, CEO Our latest 2D success story Hexotene is a few-layer hexagonal boron nitride (h-BN) nanoplatelet powder with large lateral dimensions. With high chemical purity and mono-layer particles confirmed, Hexotene is the latest addition to our high performance 2D product range. It’s unique characteristics, specifically with regards to electrical conductivity, show some markedly different properties when compared to graphene. This is particularly promising for combined projects using both graphene and boron nitride. Example BN Nano platelets Information Property Measurement Method Boron 42 è 2.0At.% Predominantly few-layer with some Raman Nitrogen 45 è 2.0At.% Layers mono-layer and bi-layer spectroscopy Oxygen 3.0 è 1.0At.% Lateral Carbon 8.0 è 2.0At.% up to 5.0 µm SEM dimensions Method XPS IR UV Wavelenght (nm) 4096 1024 256 Band Gap ~6eV Energy BORON NITRIDE GRAPHENE Graphene Metals Semi- Plastics Boron Conductor Nitride 0.125 0.25 0.50 1.00 2.00 4.00 8.00 Conductors Semi-Conductors Insulators Energy (eV) Diagram showing extremes of electrical conductivity, with Hexagonal boron nitride is white in colour and is unusual as boron nitride having an ultra-wide bandgap. it absorbs high energy UV light, whereas graphene absorbs all light frequencies. What is h-BN? Boron and nitrogen are neighbours of carbon in boron nitride (h-BN). It also happens to be the the Periodic Table. Just as carbon can exist as softest of the BN polymorphs.