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Supplies Systems Applications Components Semiconductors $129 MANAGEMENT SAM DAVIS POWERSUPPLIES SYSTEMS APPLICATIONS COMPONENTS SEMICONDUCTORS Copyright © 2016 by Penton Media, Inc. All rights reserved. SUBSCRIBE: electronicdesign.com/subscribe | 1 POWER ELECTRONICS LIBRARY TABLE OF CONTENTS ID VGS VD -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 0V -1V -1.5V -2V -2.5V MANAGEMENT -3.3V BY SAM DAVIS VDD BP3BP6 BOOT VIN 100.0 Linear VGS Regulators HSFET 80.0 Driver 5V Control 60.0 4V Anti-Cross- SW 20.0 3V Conduction BP6 RT 2V Oscillator Pre-Bias LSFET 40.0 1V SYNC/RESET_B ID 00.0 0V Ramp PWM S Q GND OC Event -20.0 RESET_VOUT + R Q Current COMP Average IOUT Sense, -40.0 OC Error Amplifier Detection CLK -60.0 FB Fault + VREF for -80.0 Soft-Start and OC Threshold DATA Reference VOUT_COMMAND -100.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 DAC SMBALERT PMBus Engine VSET VD Courtesy of Efficient Power Conversion CNTL V Sense ADC, PMBus Commands, OUT IC Interface, EEPROM OV/UV Detection ADDR0 ADDR1 DIFFO INTRODUCTION 2 PART 4: POWER APPLICATIONS .......................................................Temperature 750 kΩ Sensing PGOOD AGND PART 1: THE POWER SUPPLY CHAPTER 12: WIRELESS POWER TRANSFER ............... 98 PGND CHAPTER 1: POWER SUPPLY FUNDAMENTALS ........... 3 CHAPTER 13: ENERGY HARVESTING ....................... 104 VOUTS+ VOUTS– TSNS/SS CHAPTER 2: POWER SUPPLY CHARACTERISTICS ......... 6 CHAPTER 14: CIRCUIT PROTECTION DEVICES .......... 108 CHAPTER 3: POWER SUPPLIES – MAKE OR BUY? ...... 14 CHAPTER 15: PHOTOVOLTAIC SYSTEMS .................. 115 CHAPTER 4: POWER SUPPLY PACKAGES .................. 17 CHAPTER 16: WIND POWER SYSTEMS .................... 124 CHAPTER 5: POWER MANAGEMENT CHAPTER 17: ENERGY STORAGE ............................ 129 REGULATORY STANDARDS ................... 24 CHAPTER 18: ELECTRONIC LIGHTING SYSTEMS ....... 134 CHAPTER 6: POWER SUPPLY SYSTEM CHAPTER 19: MOTION SYSTEM POWER CONSIDERATIONS .............................. 27 MANAGEMENT ................................ 141 CHAPTER 20: COMPONENTS AND METHODS PART 2: SEMICONDUCTORS FOR CURRENT MEASUREMENT .......... 146 CHAPTER 7: VOLTAGE REGULATOR ICS.................... 31 CHAPTER 21: THERMOELECTRIC GENERATORS ........ 151 CHAPTER 8: POWER MANAGEMENT ICS ................ 51 CHAPTER 22: FUEL CELLS ........................................ 156 CHAPTER 9: BATTERY POWER MANAGEMENT ICS ... 68 CHAPTER 23: POWER MANAGEMENT OF TRANSPORTATION SYSTEMS .............. 162 CHAPTER 24: POWER MANAGEMENT TEST PART 3: SEMICONDUCTOR SWITCHES AND MEASUREMENT ........................ 172 CHAPTER 10: SILICON POWER MANAGEMENT CHAPTER 25: DATACENTER POWER ........................ 184 POWER SEMICONDUCTORS ................ 77 CHAPTER 11: WIDE BANDGAP SEMICONDUCTORS .. 91 ☞LEARN MORE @ electronicdesign.com/powermanagement | 1 POWER ELECTRONICS LIBRARY PART 3. SEMICONDUCTOR SWITCHES CHAPTER 10: SILICON POWER-MANAGEMENT POWER SEMICONDUCTORS ilicon power semiconductors +v 10-1. Power management power are employed in power man- semiconductors duplicate the action of agement systems. They are a mechanical switch in which a control found in two different forms: Load operation turns the power semiconductor • Discrete Power Semi- switch on and off to control power applied conductors (single type to a load. S housed in a package.) • Integrated Power Semiconductors Control Power turned off so zero current flows to the load. MOSFETs and BJTs (bipolar junction Signal Switch It should also have zero impedance when transistors) can be integrated with other turned on so that the on-state voltage drop is circuits in a single package. In addition, zero. Another idealistic characteristic would various types of power semiconductors be that the switch input consumes zero pow- may housed in a hybrid (multi-chip mod- er when the control signal is applied. Howev- ule, or MCM) package, that is, interconnected with other er, these idealistic characteristics are unachievable with monolithic discrete devices in the same package. the present state of the art. Power switches are actually the electronic equivalent In the real world, actual power semiconductor switch- of a mechanical switch, except for much faster switching es do not meet the ideal switching characteristics. For speed. Fig. 10-1 is the representation of a mechanical switch. The individual power semiconductor switch applies power to a load when a control signal tells it to do so. The control signal also tells it to turn off. Ideally, (a) Control Signal the power semiconductor switch should turn on and off +V in zero time. It should have an infinite impedance when 10-2. Actual power semiconductors do not meet the ideal switching characteristics. 0V (a) Control signal applied to an ideal power semiconductor (b) Ideal Output switch whose +V (b) Ideal output exhibits zero transition time when turning on and off. (c) Actual power switch exhibits some delay when turning on 0V and off. (c) Actual Output ☞LEARN MORE @ electronicdesign.com/powermanagement | 77 POWER ELECTRONICS LIBRARY CHAPTER 10: SILICON POWER-MANAGEMENT POWER SEMICONDUCTORS Drain voltage and also p-channel devices +V Source that require a negative gate voltage +V to turn on. Their current conduction capabilities are up to several tens of amperes, with breakdown voltage Gate ratings (BVDSS) of 10V to 1000V. Body MOSFETs used in integrated Body Diode Diode circuits are lateral devices with gate, Gate source and drain all on the top of the device, with current flow taking place in a path parallel to the surface. The Vertical Double diffused MOSFET -V -V (VDMOS) uses the device substrate Source Drain as the drain terminal. MOSFETs used N-Channel P-Channel in integrated circuits exhibit a higher 10-3. N-Channel and P-Channel Power MOSFETs showing the voltage on-resistance than those of discrete polarity of the Drain and the gate pulse polarity to turn the device on. MOSFETs. The fabrication processes used to example, Fig. 10-2(a) shows a control signal applied manufacture power MOSFETs are the to an ideal power semiconductor switch whose output same as those used in today’s VLSI circuits, although the exhibits zero transition time when turning on and off device geometry, voltage and current levels are signifi- (Fig. 10-2(b)). When the transistor is off (not conducting cantly different. Discrete monolithic MOSFETs have tens current) power dissipation is very low because current is or hundreds of thousands of individual cells paralleled very low. When the transistor is on (conducting maximum together in order to reduce their on-resistance. current) power dissipation is low because the conduct- The gate turns the MOSFET on when its gate-to- ing resistance is low. In contrast, an actual power switch source voltage is above a specific threshold. Typical gate exhibits some delay when turning on and off, as shown thresholds range from 1 to 4 V. For an n-channel MOSFET in Fig. 10-2(c). Therefore, some power dissipation occurs a positive bias greater than the gate-to-source threshold when the switch goes through the linear region between voltage (VGS(th) ) is applied to the gate, a current flows on and off. This means that the most power dissipa- between source and drain. For gate voltages less than tion depends on the time spent going from the off to on VGS(th) the device remains in the off-state. P-channel and vice versa, that is, going MOSFETs use a negative through the linear region. Thus, gate drive signal to turn on. 500 the faster the device goes When power semicon- through the linear region, the ID ductor switches first found lower the power dissipation TOP 3.9A wide use, discrete transistors, 400 7.0A and losses. BOTTOM 8.8A pulse transformers, opto-cou- plers, among other compo- Power MOSFETs 300 nents were used to drive the Power MOSFETS (Met- power MOSFET on and off. al-Oxide Semiconductor Field Now, specially designed gate Effect Transistors) are among 200 driver ICs are used in many the most widely used power applications. This minimizes , Single Pulse Avalanche Energy (mJ) Single Pulse , AS switch semiconductors. Power E the drive requirements from 100 MOSFETs are three-terminal a low power circuit, such as silicon devices that function by a microprocessor, and also applying a signal to the gate 0 acts as a buffer between the that controls current conduc- 25 50 75 100 125 150 controlling signal and the tion between source and drain Start TJ, Junction Temperature (°C) power semiconductor switch. (Fig. 10-3). They are available 10-4. Avalanche occurs if the maximum drain-to- The gate driver supplies in n-channel versions that source voltage is exceeded and current rushes enough drive to ensure that require a positive gate turn-on through the device. the power switch turns on ☞LEARN MORE @ electronicdesign.com/powermanagement | 78 POWER ELECTRONICS LIBRARY CHAPTER 10: SILICON POWER-MANAGEMENT POWER SEMICONDUCTORS 2.0 12 ID = 11A VGS = 4.5V 1.5 9 1.0 6 , Drain Current (A) , D I 0.5 3 , Drain-to-Source On Resistance (Normalized) On Resistance , Drain-to-Source DS(ON) R 0.0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 T , Junction Temperature (°C) J TC, Case Temperature (°C) 10-5. Normalized Variation of on-resistance vs. junction 10-6. Maximum Drain Current for a typical N-Channel temperature for an N-Channel MOSFET. Power MOSFET. properly. Some gate drivers also have protection circuits vices are rated in terms of EAR, the repetitive avalanche to prevent failure of the power semiconductor switch and energy. also its load. Trench technology provides the desirable charac- MOSFET characteristics include several parameters teristics of low on-resistance sometimes at the expense critical to their performance: of high avalanche energy. Trench power MOSFET tech- Blocking voltage (BVDSS) is the maximum voltage nology provides 15% lower device on-resistance per that can be applied to the MOSFET. When driving an unit area than existing benchmark planar technologies inductive load, this includes the applied voltage plus any but usually at the cost of higher charge. And, the trench inductively induced voltage. With inductive loads, the technology allows 10% lower on-resistance temperature voltage across the MOSFET can actually be twice the coefficient.
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