Integrated Photodiode and Amplifier Datasheet

¨ FPO OPT301 70%

INTEGRATED PHOTODIODE AND AMPLIFIER

FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch The OPT301 is an opto-electronic integrated circuit (2.29 x 2.29mm) containing a photodiode and transimpedance ● 1MΩ FEEDBACK RESISTOR amplifier on a single dielectrically isolated chip. The transimpedance amplifier consists of a precision FET- ● HIGH RESPONSIVITY: 0.47A/W (650nm) input op amp and an on-chip metal film resistor. The ● IMPROVED UV RESPONSE 0.09 x 0.09 inch photodiode is operated at zero bias for ● LOW DARK ERRORS: 2mV excellent linearity and low dark current. ● BANDWIDTH: 4kHz The integrated combination of photodiode and ● WIDE SUPPLY RANGE: ±2.25 to ±18V transimpedance amplifier on a single chip eliminates ● LOW QUIESCENT CURRENT: 400µA the problems commonly encountered in discrete designs such as leakage current errors, noise pick-up and ● HERMETIC TO-99 gain peaking due to stray capacitance. The OPT301 operates over a wide supply range (±2.25 APPLICATIONS to ±18V) and supply current is only 400µA. It is packaged in a hermetic TO-99 metal package with a ● MEDICAL INSTRUMENTATION glass window, and is specified for the –40°C to 85°C ● LABORATORY INSTRUMENTATION temperature range. ● POSITION AND PROXIMITY SENSORS ● PHOTOGRAPHIC ANALYZERS ● SMOKE DETECTORS SPECTRAL RESPONSIVITY

Ultraviolet Infrared Red Blue Green Yellow 2 0.5 0.5 1MΩ Using Internal 4 0.4 0.4 1MΩ Resistor 40pF 0.3 0.3

0.2 0.2 75Ω 5 VO Voltage Output (V/µW) λ 0.1 0.1 Photodiode Responsivity (A/W) OPT301 0 0 831 100 200 300 400 500 600 700 800 900 1000 1100 V+ VÐ Wavelength (nm)

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SBBS001 SPECIFICATIONS ELECTRICAL ° ± λ Ω At TA = +25 C, VS = 15V, = 650nm, internal 1M feedback resistor, unless otherwise noted.

OPT301M PARAMETER CONDITIONS MIN TYP MAX UNITS RESPONSIVITY Photodiode Current 650nm 0.47 A/W Voltage Output 650nm 0.47 V/µW vs Temperature 200 ppm/°C Unit-to-Unit Variation 650nm ±5% Nonlinearity(1) FS Output = 10V 0.01 % of FS Photodiode Area (0.090 x 0.090in) 0.008 in2 (2.29 x 2.29mm) 5.2 mm2

DARK ERRORS, RTO(2) Offset Voltage, Output ±0.5 ±2mV vs Temperature ±10 µV/°C ± ± µ vs Power Supply VS = 2.25V to 18V 10 100 V/V Voltage Noise Measured BW = 0.1 to 100kHz 160 µVrms

RESISTOR—1MΩ Internal Resistance 1MΩ Tolerance ±0.5 ±2% vs Temperature 50 ppm/°C

FREQUENCY RESPONSE Bandwidth, Large or Small-Signal, –3dB 4 kHz Rise Time, 10% to 90% 90 µs Settling Time, 1% FS to Dark 240 µs 0.1% FS to Dark 350 µs 0.01% FS to Dark 900 µs ± µ Overload Recovery Time 100% overdrive, VS = 15V 240 s ± µ 100% overdrive, VS = 5V 500 s ± µ 100% overdrive, VS = 2.25V 1000 s OUTPUT Ω Voltage Output RL = 10k (V+) – 1.25 (V+) – 0.65 V Ω RL = 5k (V+) – 2 (V+) – 1 V Capacitive Load, Stable Operation 10 nF Short-Circuit Current ±18 mA

POWER SUPPLY Specified Operating Voltage ±15 V Operating Voltage Range ±2.25 ±18 V ± ± Quiescent Current IO = 0 0.4 0.5 mA TEMPERATURE RANGE Specification –40 +85 °C Operating/Storage –55 +125 °C θ ° Thermal Resistance, JA 200 C/W NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

PHOTODIODE SPECIFICATIONS ° At TA = +25 C, unless otherwise noted.

Photodiode of OPT301 PARAMETER CONDITIONS MIN TYP MAX UNITS Photodiode Area (0.090 x 0.090in) 0.008 in2 (2.29 x 2.29mm) 5.1 mm2 Current Responsivity 650nm 0.47 A/W (1) Dark Current VD = 0V 500 fA vs Temperature doubles every 10°C (1) Capacitance VD = 0V 4000 pF

NOTE: (1) Voltage Across Photodiode.

¨ OPT301 2 SPECIFICATIONS (CONT) ELECTRICAL Op Amp Section of OPT301(1) ° ± At TA = +25 C, VS = 15V, unless otherwise noted.

OPT301 Op Amp PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT Offset Voltage ±0.5 mV vs Temperature ±5 µV/°C ± ± µ vs Power Supply VS = 2.25V to 18V 10 V/V Input Bias Current 1pA vs Temperature doubles every 10°C

NOISE Input Voltage Noise Voltage Noise Density, f=10Hz 30 nV/√Hz f=100Hz 25 nV/√Hz f=1kHz 15 nV/√Hz Current Noise Density, f=1kHz 0.8 fA/√Hz

INPUT VOLTAGE RANGE Common-Mode Input Range ±14.4 V Common-Mode Rejection 106 dB

INPUT IMPEDANCE Differential 1012||3 Ω||pF Common-Mode 1012||3 Ω||pF

OPEN-LOOP GAIN Open-Loop Voltage Gain 120 dB

FREQUENCY RESPONSE Gain-Bandwidth Product 380 kHz Slew Rate 0.5 V/µs Settling Time 0.1% 4 µs 0.01% 5 µs

OUTPUT 6 Ω Voltage Output RL = 10k (V+) – 1.25 (V+) – 0.65 V Ω RL = 5k (V+) – 2 (V+) – 1 V Short-Circuit Current ±18 mA

POWER SUPPLY Specified Operating Voltage ±15 V Operating Voltage Range ±2.25 ±18 V ± ± Quiescent Current IO = 0 0.4 0.5 mA NOTE: (1) Op amp specifications provided for information and comparison only.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

¨ 3 OPT301 PIN CONFIGURATION ELECTROSTATIC Top View DISCHARGE SENSITIVITY Common 8 This integrated circuit can be damaged by ESD. Burr-Brown V+ NC recommends that all integrated circuits be handled with ap- 17Photodiode Area propriate precautions. Failure to observe proper handling and installation procedures can cause damage. ÐIn 26NC ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric 35 changes could cause the device not to meet its published VÐ Output 4 specifications. 1MΩ Feedback

NOTE: Metal package is internally connected to common (Pin 8). PACKAGE INFORMATION

PACKAGE DRAWING PRODUCT PACKAGE NUMBER(1) ABSOLUTE MAXIMUM RATINGS OPT301M 8-Pin TO-99 001-1 Supply Voltage ...... ±18V NOTE: (1) For detailed drawing and dimension table, please see end of data ± Input Voltage Range (Common Pin) ...... VS sheet, or Appendix C of Burr-Brown IC Data Book. Output Short-Circuit (to ground) ...... Continuous Operating Temperature ...... –55°C to +125°C Storage Temperature ...... –55°C to +125°C Junction Temperature ...... +125°C Lead Temperature (soldering, 10s) ...... +300°C

¨ OPT301 4 TYPICAL PERFORMANCE CURVES ° ± λ At TA = +25 C, VS = 15V, = 650nm, unless otherwise noted.

NORMALIZED SPECTRAL RESPONSIVITY VOLTAGE RESPONSIVITY vs RADIANT POWER 1.0 10

(0.52A/W) 0.8 Ω 650nm 1 (0.47A/W) = 10M R F 0.6 Ω 0.1 = 1M Ω R F

0.4 = 100k R F Ω λ = 650nm Output Voltage (V) 0.01 = 10k 0.2 R F Normalized Current or Voltage Output 0 0.001 100 200 300 400 500 600 700 800 900 1000 1100 0.01 0.11 10 100 1k Wavelength (nm) Radiant Power (µW)

VOLTAGE RESPONSIVITY vs IRRADIANCE VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY 10 10 Ω RF = 10M Ω λ = 650nm RF = 3.3M 1 Ω 1 Ω RF = 1M Ω = 10M RF = 330k CEXT = 30pF 6 R F Ω R = 100kΩ C = 90pF 0.1 0.1 F EXT = 1M Ω R F

= 100k F Ω

Output Voltage (V) R

0.01 Responsivity (V/µW) 0.01 Ω RF = 33k CEXT = 180pF = 10k λ = 650nm R F Ω RF = 10k CEXT = 350pF 0.001 0.001 0.001 0.010.1 1 10 100 100 1k 10k 100k 1M Irradiance (W/m2) Frequency (Hz)

DISTRIBUTION OF RESPONSIVITY RESPONSE vs INCIDENT ANGLE 60 1.0 1.0

θ 50 0.8 0.8 λ = 650nm 40 Distribution Totals 0.6 0.6 100% 30 Laboratory Test

Units (%) Data 0.4 0.4 20 Relative Response

10 0.2 0.2

0 0 0 0.45 0.46 0.47 0.48 0.49 0.5 0 ±20 ±40 ±60 ±80 Responsivity (A/W) Incident Angle (¡)

¨ 5 OPT301 TYPICAL PERFORMANCE CURVES ° ± λ At TA = +25 C, VS = 15V, = 650nm, unless otherwise noted.

OUTPUT NOISE VOLTAGE QUIESCENT CURRENT vs TEMPERATURE vs MEASUREMENT BANDWIDTH 0.6 1000 Dotted lines show 0.5 noise beyond the V = ±15V S 100 signal bandwidth. 0.4 Ω Ω Ω = 1M 0.3 10 = 100M R F V = ±2.25V R F = 10M S Dice R F 0.2 1 Noise Voltage (µVrms) Quiescent Current (mA) 0.1 Ω RF = 10k CEXT = 350pF Ω RF = 100k CEXT = 90pF 0 0.1 Ð75 Ð50 Ð25 0 25 50 75 100 125 1 10100 1k 10k 100k Temperature (¡C) Measurement Bandwidth (Hz)

SMALL-SIGNAL DYNAMIC RESPONSE LARGE-SIGNAL DYNAMIC RESPONSE 2V/div 20mV/div

100µs/div 100µs/div

NOISE EFFECTIVE POWER vs MEASUREMENT BANDWIDTH 10Ð7 Dotted lines indicate R = 10k noise measured beyond F 10Ð8 the signal bandwidth. λ = 650nm RF = 100k 10Ð9

RF = 1M 10Ð10

RF = 10M

10Ð11

RF = 100M Noise Effective Power (W)

10Ð12

10Ð13

10Ð14 1 10100 1k 10k 100k Measurement Bandwidth (Hz)

¨ OPT301 6 APPLICATIONS INFORMATION If your light source is focused to a small area, be sure that it is properly aimed to fall on the photodiode. If a narrowly Figure 1 shows the basic connections required to operate the focused light source were to miss the photodiode area and OPT301. Applications with high-impedance power supplies fall only on the op amp circuitry, the OPT301 would not may require decoupling capacitors located close to the perform properly. The large (0.090 x 0.090 inch) photodiode device pins as shown. Output is zero volts with no light and area allows easy positioning of narrowly focused light increases with increasing illumination. sources. The photodiode area is easily visible—it appears very dark compared to the surrounding active circuitry.

2 The incident angle of the light source also affects the 1MΩ R apparent sensitivity in uniform irradiance. For small incident F 4 angles, the loss in sensitivity is simply due to the smaller I (0V) 40pF D effective light gathering area of the photodiode (proportional I is proportional D to the cosine of the angle). At a greater incident angle, light to light intensity (radiant power). is reflected and scattered by the side of the package. These 75Ω ID 5 effects are shown in the typical performance curve V λ O“Response vs Incident Angle.” VO = ID RF OPT301 DARK ERRORS 831 The dark errors in the specification table include all sources. 0.1µF 0.1µF NOTE: Metal package The dominant error source is the input offset voltage of the is internally connected op amp. Photodiode dark current and input bias current of to common (Pin 8). +15V Ð15V the op amp are approximately 2pA and contribute virtually no offset error at room temperature. Dark current and input FIGURE 1. Basic Circuit Connections. bias current double for each 10°C above 25°C. At 70°C, the error current can be approximately 100pA. This would Photodiode current, ID, is proportional to the radiant power Ω produce a 1mV offset with RF = 10M . The OPT301 is or flux (in watts) falling on the photodiode. At a wavelength useful with feedback resistors of 100MΩ or greater at room of 650nm (visible red) the photodiode Responsivity, R , is I temperature. The dark output voltage can be trimmed to 6 approximately 0.45A/W. Responsivity at other wavelengths zero with the optional circuit shown in Figure 3. is shown in the typical performance curve “Responsivity vs Wavelength.” C The typical performance curve “Output Voltage vs Radiant EXT Power” shows the response throughout a wide range of radiant power. The response curve “Output Voltage vs –6 2 RF Irradiance” is based on the photodiode area of 5.23 x 10 m . 2 1MΩ The OPT301’s voltage output is the product of the photodiode 4 current times the feedback resistor, (IDRF). The internal feedback resistor is laser trimmed to 1MΩ ±2%. Using this 40pF resistor, the output voltage responsivity, RV, is approximately 0.45V/µW at 650nm wavelength. 75Ω 5 An external resistor can be used to set a different voltage λ Ω VO = ID RF responsivity. For values of RF less than 1M , an external OPT301 capacitor, CEXT, should be connected in parallel with RF (see Figure 2). This capacitor eliminates gain peaking and prevents 831 V+ VÐ instability. The value of CEXT can be read from the table in Figure 2.

EXTERNAL RF CEXT 100MΩ (1) LIGHT SOURCE POSITIONING 10MΩ (1) The OPT301 is 100% tested with a light source that uniformly 1MΩ (1) 330kΩ 30pF illuminates the full area of the integrated circuit, including 100kΩ 130pF the op amp. Although all IC amplifiers are light-sensitive to 33kΩ 180pF some degree, the OPT301 op amp circuitry is designed to 10kΩ 350pF minimize this effect. Sensitive junctions are shielded with NOTE: (1) No CEXT required. metal, and differential stages are cross-coupled. Furthermore, the photodiode area is very large relative to the op amp input FIGURE 2. Using External Feedback Resistor. circuitry making these effects negligible.

¨ 7 OPT301 When used with very large feedback resistors, tiny leakage approximately 0.02% up to 100µA photodiode current. The currents on the circuit board can degrade the performance of photodiode can produce output currents of 1mA or greater the OPT301. Careful circuit board design and clean assembly with high radiant power, but nonlinearity increases to several procedures will help achieve best performance. A “guard percent in this region. trace” on the circuit board can help minimize leakage to the This excellent linearity at high radiant power assumes that critical non-inverting input (pin 2). This guard ring should the full photodiode area is uniformly illuminated. If the light encircle pin 2 and connect to Common, pin 8. source is focused to a small area of the photodiode, nonlinearity will occur at lower radiant power. DYNAMIC RESPONSE Using the internal 1MΩ resistor, the dynamic response of NOISE PERFORMANCE the photodiode/op amp combination can be modeled as a Noise performance of the OPT301 is determined by the op simple R/C circuit with a –3dB cutoff frequency of 4kHz. amp characteristics in conjunction with the feedback µ This yields a rise time of approximately 90 s (10% to 90%). components and photodiode capacitance. The typical Dynamic response is not limited by op amp slew rate. This performance curve “Output Noise Voltage vs Measurement is demonstrated by the dynamic response oscilloscope Bandwidth” shows how the noise varies with RF and measured photographs showing virtually identical large-signal and bandwidth (1Hz to the indicated frequency). The signal small-signal response. bandwidth of the OPT301 is indicated on the curves. Noise Dynamic response will vary with feedback resistor value as can be reduced by filtering the output with a cutoff frequency shown in the typical performance curve “Voltage Output equal to the signal bandwidth. Responsivity vs Frequency.” Rise time (10% to 90%) will Output noise increases in proportion to the square-root of the vary according to the –3dB bandwidth produced by a given feedback resistance, while responsivity increases linearly feedback resistor value— with feedback resistance. So best signal-to-noise ratio is 0. 35 t ≈ (1) achieved with large feedback resistance. This comes with R f C the trade-off of decreased bandwidth. where: The noise performance of a photodetector is sometimes characterized by Noise Effective Power (NEP). This is the tR is the rise time (10% to 90%) f is the –3dB bandwidth radiant power which would produce an output signal equal C to the noise level. NEP has the units of radiant power (watts). The typical performance curve “Noise Effective LINEARITY PERFORMANCE Power vs Measurement Bandwidth” shows how NEP varies

Current output of the photodiode is very linear with radiant with RF and measurement bandwidth. power throughout a wide range. Nonlinearity remains below

2 1MΩ R 2 F 4 1MΩ 4 40pF Gain Adjustment 40pF +50%; Ð0% 75Ω 5 V V+ 75Ω λ O 5 VO λ OPT301 Ω 100µA 5k 831 1/2 REF200 OPT301 Ω 831 V+ VÐ 10k 100Ω V+ VÐ 500Ω

100Ω 0.01µF FIGURE 4. Responsivity (Gain) Adjustment Circuit.

100µA 1/2 REF200 Adjust dark output for 0V. Trim Range: ±7mV VÐ

FIGURE 3. Dark Error (Offset) Adjustment Circuit.

¨ OPT301 8 This OPT301 used as photodiode, only. 2 2 1MΩ R F 4 1MΩ R F 4 NC 40pF R1 + R2 40pF VO = ID RF R2 75Ω 5 75Ω 5 λ λ NC R1 OPT301 19kΩ OPT301 831 8831 R2 I V+ VÐ D1 1kΩ

2 1MΩ R Advantages: High gain with low resistor values. F 4 Less sensitive to circuit board leakage. Disadvantage: Higher offset and noise than by using high 40pF value for RF.

FIGURE 5. “T” Feedback Network. 75Ω 5 V λ O V = (I Ð I ) R OPT301 O D2 D1 F 2 831 1MΩ R ID2 F1 4 V+ VÐ Bandwidth is reduced to 2.8kHz due to additional 40pF photodiode capacitance.

FIGURE 7. Differential Light Measurement. 75Ω 5 6 λ VO = ID1 RF1 + ID2 RF2 OPT301 831 2 1MΩ R V+ VÐ F 4 Max linear input voltage 40pF (V+) Ð0.6V typ

2 75Ω 5 1MΩ R F2 4 λ

40pF OPT301 1 83R1 ID Ω +15V Ð15V 1k 75Ω 5 V= I R O D2 F2 ≤ λ IO 5mA

OPT301 RF IO = ID 1 + 831 R1 V+ VÐ FIGURE 8. Current Output Circuit. FIGURE 6. Summing Output of Two OPT301s.

¨ 9 OPT301 2 2 1MΩ R F 4 1MΩ R F1 4 Output filter reduces 40pF 40pF output noise from 250µV to 195µV.

75Ω 5 75Ω 5 λ V + λ O OPT301 V= I R O D F OPT301 831 10nF Ð 8 (1) 1 3 VZ VZ V+ VÐ 5kΩ 3.3V (pesudo-ground) 0.1µF FIGURE 10. Output Filter to Reduce Noise.

V+

NOTE: (1) Zener diode or other shunt regulator.

FIGURE 9. Single Power Supply Operation.

2 1MΩ R INA106 F1 4 10kΩ 100kΩ 5 40pF 2 Difference Measurement

75Ω VO = 10 (VO2 Ð VO1) 5 6 V= I R λ O1 D1 F1 10kΩ 100kΩ 3 1 OPT301 838 1

V+ VÐ G = 10

2 100kΩ Log of Ratio Measurement 1MΩ R 1 F2 4 (Absorbance) 7 VO1 100kΩ LOG100 VO = K log 40pF 14 10 VO2

3 75Ω 5 VO2 = ID2 RF2 1nF λ CC

OPT301 831 V+ VÐ

FIGURE 11. Differential Light Measurement.

¨ OPT301 10 C2 µ 0.1 F R2 Ω R3 1M 100kΩ

C R 1 2 1 0.1µF 1MΩ 1MΩ 4

40pF 20dB/decade 1MΩ f = Ð3dB π 75Ω R3(2 R2C2) 5 V λ O

OPT301 8

FIGURE 12. DC Restoration Rejects Unwanted Steady-State Background Light.

100µA 1/2 REF200 100µA 2 1 1/2 REF200 1MΩ 4 10V to 36V 40pF

2N2222 75Ω 5 20kΩ λ 4-20mA (4mA Dark) OPT301 IN4148 83

R R1 2 22.5kΩ 65Ω

1.014 X 106 Ω Calculations shown provide a dark output of 4mA. R1 = Ð 994,000 (1 Ð 2500 I ) Output is 20mA at a photodiode current of D max ID max. Values shown are for ID max max = 1µA. 26,000 Ω R2 = Ð 26,000 (1 Ð 2500 ID max)

FIGURE 13. 4-20mA Current-Loop Transmitter.

¨ 11 OPT301 PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) Ball material (3) (4/5) (6) OPT301M ACTIVE TO LMD 8 20 RoHS & Green AU N / A for Pkg Type -55 to 125 OPT301M

(1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width.

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Addendum-Page 1

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