Electronic Structure of Boron Flat Holeless Sheet
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Article Electronic Structure of Boron Flat Holeless Sheet Levan Chkhartishvili 1,2,3,*, Ivane Murusidze 4 and Rick Becker 3 1 Engineering Physics Department, Georgian Technical University, 77 Kostava Ave., Tbilisi 0175, Georgia 2 Boron and Composite Materials Laboratory, Ferdinand Tavadze Institute of Metallurgy and Materials Science, 10 Mindeli Str., Tbilisi 0186, Georgia 3 Boron Metamaterials, Cluster Sciences Research Institute, 39 Topsfield Rd., Ipswich, MA 01938, USA; [email protected] 4 Institute of Applied Physics, Ilia State University, 3/5 Cholokashvili Ave., Tbilisi 0162, Georgia; [email protected] * Correspondence: [email protected] or [email protected] Received: 30 January 2019; Accepted: 26 February 2019; Published: 3 March 2019 Abstract: The electronic band structure, namely energy band surfaces and densities-of-states (DoS), of a hypothetical flat and ideally perfect, i.e., without any type of holes, boron sheet with a triangular network is calculated within a quasi-classical approach. It is shown to have metallic properties as is expected for most of the possible structural modifications of boron sheets. The Fermi curve of the boron flat sheet is found to be consisted of 6 parts of 3 closed curves, which can be approximated by ellipses representing the quadric energy-dispersion of the conduction electrons. The effective mass of electrons at the Fermi level in a boron flat sheet is found to be too small compared with the free electron mass m0 and to be highly anisotropic. Its values distinctly differ in directions G–K and G–M: mG–K/m0 ≈ 0.480 and mG–M/m0 ≈ 0.052, respectively. The low effective mass of conduction electrons, ms/m0 ≈ 0.094, indicates their high mobility and, hence, high conductivity of the boron sheet. The effects of buckling/puckering and the presence of hexagonal or other type of holes expected in real boron sheets can be considered as perturbations of the obtained electronic structure and theoretically taken into account as effects of higher order. Keywords: boron sheet; electronic structure; density-of-states (DoS); Fermi curve; effective mass 1. Introduction Borophene—a one-atom-thick sheet of boron—is one of the most promising nanomaterials [1]. Most all-boron quasi-planar clusters and nanosurfaces, including nanosheets, constructed of triangular atomic rings, which Ihsan Boustani et al. predicted theoretically in 1994 and the following years (quasi-planar clusters [2], nanotubes [2–5], nanotube-to-sheet transitions [6], and sheets [5,7]), are now experimentally confirmed (quasi-planar clusters [8–10], nanotubes [11–13], nanotube-to-sheet transitions [14,15], and sheets [16,17]). 1.1. Why should Boron Sheets be Formed? There are different reasons in favor of the formation of stable 2-D all-boron structures. They can be divided into several groups. Let’s consider them separately. 1.1.1. 3-D All-Boron Structures Boron, the fifth element of the Periodic Table, is located at the intersection of semiconductors and metals. Due to a small covalent radius (only 0.84 Å) and number (only 3) of valence electrons, boron does not form simple three-dimensional structures but crystals with icosahedral clusters with many Condens. Matter 2019, 4, 28; doi:10.3390/condmat4010028 www.mdpi.com/journal/condensedmatter Condens. Matter 2019, 4, 28 2 of 22 Condens. Matter 2019, 4, x 2 of 22 manyatoms atoms in the in unit the cell. unit At cell. least At threeleast three all-boron all-boron allotropes allotropes are known— are known—α- andα- βand-rhombohedral β-rhombohedral and Condens. Matter 2019, 4, x 2 of 22 andhigh-pressure high-pressureγ-orthorhombic γ-orthorhombic phases—for phases—for the experimental the experi phasemental diagram phase of borondiagram see Referenceof boron [see18]. Reference [18]. In addition, α- and β-tetragonal and a number of other boron structures, probably In addition,many atomsα- andin theβ -tetragonalunit cell. 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For this reason, the average coordination number of a boron-rich lattice ranges from 5 to 5+1=6. Figure 1. A regular icosahedron B12 withwith B-atoms B-atoms at at the the vertices. Figure 1. A regular icosahedron B12 with B-atoms at the vertices. However, an isolated regular boron icosahedron is an electron-deficientelectron-deficient structure—the total numberHowever, ofof valencevalence an electrons electronsisolated ofregular of 12 12 boron boronboron atoms icosahedronatoms is not is sufficientnot is sufficientan electron-deficient to fill to all fill the all covalent thestructure—the covalent bonding bonding orbitalstotal orbitalscorrespondingnumber corresponding of valence to such aelectrons cage-molecule.to such of 12a boroncage-molecule. Thus, atoms if it were is not aThus, stable sufficient if structure, it towere fill then alla thestable intra-icosahedral covalent structure, bonding bondsthen wouldintra-icosahedralorbitals be only corresponding partially bonds covalent would to such be but only alsoa cage-molecule. topartially some extent covalent Thus, metallic. but if alsoit As were forto boronsome a stable extent icosahedra structure, metallic. constituting thenAs for boronrealintra-icosahedral crystals, icosahedra it was clearlybondsconstituting would demonstrated,