Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys Marta Agati, Maxime Vallet, Sébastien Joulié, Daniel Benoit, Alain Claverie To cite this version: Marta Agati, Maxime Vallet, Sébastien Joulié, Daniel Benoit, Alain Claverie. Chemical phase segre- gation during the crystallization of Ge-rich GeSbTe alloys. Journal of Materials Chemistry C, Royal Society of Chemistry, 2019, 7 (28), pp.8720-8729. 10.1039/c9tc02302j. hal-03015385 HAL Id: hal-03015385 https://hal.archives-ouvertes.fr/hal-03015385 Submitted on 4 Dec 2020 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys Marta Agati,a Maxime Vallet,a Sébastien Joulie,a Daniel Benoit,b Alain Claverie.a,* a) CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse, France. b) STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles, France.
[email protected] [email protected] [email protected] [email protected] [email protected] * Address all correspondence to Alain Claverie at
[email protected] Key words: Phase Change Materials; GST alloys; transmission electron microscopy; phase separation; crystallization. Abstract Ge-rich Ge-Sb-Te alloys are foreseen materials for new non-volatile memories named Phase Change Memories offering an extended range of possible applications.