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VEM Thin Film Evaporation Guide

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VEM Thin Film Evaporation Guide Vacuum Engineering & Materials 390 Reed Street Santa Clara, CA 95050 USA www.vem-co.com Revision 2017 Thin Film Evaporation Guide Toll Free: 877-986-8900 Phone: 408-871-9900 Fax: 408-562-9125 E-mail: [email protected] ISO 9001:2008 Certified Copyright © 2017 – Vacuum Engineering and Materials, all rights reserved Temperature Melting Density °C @ Vapor Pressure (Torr) Evaporation Crucible Material Symbol Z-ratio Remarks Point °C (bulk, g/cm3) Method Liner 10-8 10-6 10-4 TiB -TiC, 2 High deposition rates possible. Al wets Aluminum Al 660 2.7 1.08 677 821 1010 eBeam (Xlnt) TiB -BN, 2 IMCS graphite, BN Aluminum TiB -BN, BN, C, AlSb 1080 4.3 — — — — eBeam (fair) 2 Co-evaporation is the best approach Antimonide Al2O3 Aluminum TiB -BN, BN, Co-evaporation can work but typically AlAs 1600 3.7 — — — ~1300 eBeam (poor) 2 Arsenide Al2O3 done with MBE Aluminum eBeam or thermal evaporation of AlBr3 97 3.01 — — — ~50 eBeam (poor) graphite, W Bromide anhydrous AlBr3 powder Aluminum eBeam evaporation from powder, but Al C 1400 2.36 — — — ~800 eBeam (fair) graphite, W Carbide 4 3 CVD is a better approach eBeam evaporation of Al-Cu alloys is Aluminum Al2%Cu 640 2.8 — — — — eBeam (fair) TiB -TiC, BN possible, but sputter deposition is a 2% Copper 2 better approach Aluminum 1257 410 490 700 AlF3 3.07 — eBeam (fair) graphite, Mo, W Films tend to be porous, but smooth Fluoride sublimes sublimes Aluminum — TiB -TiC, Reactive evaporation of Al in N or AlN 3.26 — — — ~1750 eBeam (fair) 2 2 Nitride sublimes graphite, BN ammonia partial pressure Aluminum Swept beam with low deposition rates Al O 2045 3.97 0.336 — — 1550 eBeam (Xlnt) W, graphite Oxide (Alumina) 2 3 (< 3 Å/sec) eBeam evaporation of Al-Si alloys is Aluminum Al2%Si 640 2.6 — — — 1010 eBeam (fair) TiB -TiC, BN possible, but sputter deposition is a 2% Silicon 2 better approach 279 345 425 As the deposition rate is increased from BN, graphite, Antimony Sb 630 6.68 — eBeam (fair) 3-5 Å/s the grain size decreases and Al O sublimes 2 3 film coverage improves Best results are achieved with Antimony Sb Te 619 6.5 — — — 600 eBeam (fair) graphite, BN, W powdered source material, relatively Telluride 2 3 high deposition rates can be achieved Antimony — — ~300 eBeam evaporation from powder or Sb2O3 656 5.2 or 5.76 — eBeam (good) BN, Al2O3 Trioxide sublimes granules Antimony Can be co-evaporated with Se to Sb Se 611 — — — — — eBeam (fair) graphite Triselenide 2 3 overcome variable stoichiometric effects Films without substrate heating are Antimony Sb S 550 4.64 — — — ~200 eBeam (good) Al O , Mo, Ta amorphous, while polycrystalline films Trisulphide 2 3 2 3 form on heated substrates 107 150 210 Sputter deposition is the preferred Al O , BeO, Arsenic As 814 5.73 — eBeam (poor) 2 3 method for deposition of elemental graphite sublimes arsenic Arsenic Deposition efficiency increases with As Se 360 4.75 — — — — eBeam (poor) Al O , quartz Selenide 2 3 2 3 deposition rate Arsenic Al O , quartz, Thin films tend to be richer in As As S 300 3.43 — — — ~400 eBeam (fair) 2 3 Trisulphide 2 3 Mo compared to the source material Arsenic CVD is the preferred deposition As Te 362 — — — — — eBeam (poor) Al O , quartz Tritelluride 2 3 2 3 technique for this material Reacts with ceramics. Ba evaporation Barium Ba 710 3.78 — 545 627 735 eBeam (fair) W, Ta, Mo pellets are often shipped with protective coatings which must be removed Swept beam and slow power ramp to Barium BaCl 962 3.86 — — — ~650 eBeam (poor) W, Mo precondition and outgas the source Chloride 2 material — — ~700 Better consistency in refractive index is Barium Fluoride BaF2 1280 4.83 — eBeam (fair) W, Mo sublimes achieved via CVD Swept beam and slow power ramp to Barium Oxide BaO 1923 5.72 or 5.32 — — — ~1300 eBeam (fair) Al2O3, quartz precondition and outgas the source material Barium Sputter deposition is the preferred BaS 2200 4.25 — — — 1100 eBeam (poor) W, Mo Sulphide deposition technique BaTiO3 will decompose as single Barium Titanate BaTiO3 Decomposes 6 — Decomposes eBeam (poor) W, Mo source. Co-evaporate with Ti to maintain Ba/Ti ratio www.vem-co.com ISO 9001:2008 Certified Temperature Melting Density °C @ Vapor Pressure (Torr) Evaporation Crucible Material Symbol Z-ratio Remarks Point °C (bulk, g/cm3) Method Liner 10-8 10-6 10-4 Very high deposition rates are possible. Beryllium Be 1278 1.85 — 710 878 1000 eBeam (Xlnt) graphite Avoid Be powder sources due to toxicity Beryllium CVD is the preferred deposition BeCl 440 1.9 — — — ~150 eBeam (poor) graphite Chloride 2 technique for this material Beryllium — — ~200 BeF2 800 1.99 — eBeam (fair) graphite Avoid powder sources due to toxicity Fluoride sublimes Thin films can also be produced via Beryllium Oxide BeO 2530 3.01 — — — 1900 eBeam (fair) graphite, Al2O3 reactive evaporation of Be with O2 Post deposition thermal annealing Bismuth Bi 271 9.8 — 330 410 520 eBeam (Xlnt) Al2O3, graphite significantly enhances film properties. However, vapors are toxic — — ~300 Sublimes at relatively low temperature, Bismuth BiF 727 8.75 — eBeam (poor) graphite so reasonable vapor pressure can be Fluoride 3 sublimes achieved eBeam evaporation from Bi2O3 source Bismuth Oxide Bi2O3 820 8.9 — — — ~1400 eBeam (poor) — is possible, but variations in thin film stoichiometry may occur Sputter deposition is preferred, but Bismuth Bi Se 710 7.66 — — — ~650 eBeam (fair) graphite, quartz co-evaporation using Bi and Se sources Selenide 2 3 is possible Sputter deposition is preferred, but Bismuth Bi Te 585 7.85 — — — ~600 eBeam (fair) graphite, quartz co-evaporation using Bi and Te sources Telluride 2 3 is possible Decomposes when evaporated. Sputter Bismuth deposition is preferred, but can be Bi2Ti2O7 — — — Decomposes eBeam (poor) graphite, quartz Titanate reactively co-evaporated in O2 partial pressure Bismuth Can be co-evaporated from Bi and S Bi S 685 7.39 — — — — eBeam (poor) graphite, W Trisulphide 2 3 sources 1278 1548 1797 Can react with graphite and tungsten Boron B 2100 2.36 0.389 eBeam (Xlnt) graphite, W crucible liners. Requires high power to sublimes evaporate Ion assisted eBeam deposition with Ar Boron Carbide B C 2350 2.5 — 2500 2580 2650 eBeam (good) graphite, W 4 can improve film adhesion — — ~1600 Ion assisted eBeam deposition with N2 Boron Nitride BN 2300 2.2 — eBeam (poor) graphite, W produces stoichiometric thin films, but sublimes sputter deposition is preferred eBeam evaporation from bulk source Boron Oxide B2O3 460 1.82 — — — ~1400 eBeam (good) W, Mo material produces stoichiometric thin films Boron B S 310 1.55 — — — 800 eBeam (poor) graphite — Trisulphide 2 3 Dedicated system is recommended, Cadmium Cd 321 8.64 — 64 120 180 eBeam (fair) Al2O3, quartz since Cd can contaminate other purity sensitive depositions Cadmium CdSb 456 6.92 — — — — — — — Antimonide Thin films can be produced by eBeam Cadmium evaporation from bulk source material, Cd As 721 6.21 — — — — eBeam (poor) quartz Arsenide 3 2 but CVD is a preferred deposition method Cadmium CdBr 567 5.19 — — — ~300 — — — Bromide 2 Cadmium CdCl 570 4.05 — — — ~400 — — — Chloride 2 Cadmium CdF 1070 5.64 — — — ~500 — — — Fluoride 2 CdI films have been deposited by Cadmium 2 CdI 400 5.3 — — — ~250 — — thermal evaporation on glass substrates Iodide 2 using stoichiometric powders Can be produced by reactive Cadmium Oxide CdO 900 6.95 — — — ~530 eBeam (poor) Al2O3, quartz evaporation of Cd in partial pressure of O2 or reactive sputtering with O2 Cadmium — — 540 Al O , quartz, eBeam evaporation from bulk source CdSe 1264 5.81 — eBeam (good) 2 3 Selenide sublimes graphite material produces uniform films www.vem-co.com ISO 9001:2008 Certified Temperature Melting Density °C @ Vapor Pressure (Torr) Evaporation Crucible Material Symbol Z-ratio Remarks Point °C (bulk, g/cm3) Method Liner 10-8 10-6 10-4 Cadmium Reports in the literature of deposition CdSiO — — — — — ~600 — — Siliside 2 by CVD — — 550 Substrate heating improves film Cadmium Al O , quartz, CdS 1750 4.82 — eBeam (fair) 2 3 adhesion. Deposition rates of 15 Å/sec Sulphide graphite sublimes are possible High quality CdTe thin films on glass Cadmium Al O , quartz, CdTe 1098 6.2 — — — 450 eBeam (fair) 2 3 substrates at 100°C have been Telluride graphite fabricated with eBeam deposition 272 357 459 Low partial pressure of O2 in the Calcium Ca 842 1.56 — eBeam (poor) Al2O3, quartz vacuum chamber is required to avoid sublimes oxidizing the Ca Deposition rate of 20 Å/sec are easily Calcium CaF 1360 3.18 — — — ~1100 eBeam (Xlnt) quartz, Ta achieved with eBeam deposition. Fluoride 2 Substrate heating improves film quality Calcium Oxide CaO 2580 3.35 — — — ~1700 eBeam (poor) ZrO2, graphite Forms volatile oxides with W and Mo Post deposition thermal annealing Calcium Silicate CaO-SiO2 1540 2.9 — — — — eBeam (good) quartz at 500°C improves film quality and adhesion — Decomposition of CaS bulk source Calcium CaS 2.18 — — — 1100 eBeam (poor) ZrO , graphite material can be overcome by co- Sulphide 2 sublimes evaporation with S Calcium Sputter deposition is the preferred CaTiO 1975 4.1 — 1490 1600 1690 eBeam (poor) — Titanate 3 method Calcium Substrate heating improves the CaWO 1620 6.06 — — — — eBeam (good) W, ZrO Tungstate 4 2 crystallinity of the deposit — 1657 1867 2137 Better film adhesion results from eBeam Carbon C 1.8-2.3 0.22 eBeam (Xlnt) graphite, W evaporation compared to vacuum arc (diamond) sublimes sublimes deposition Al O , BeO, Ce deposits readily oxidize when Cerium Ce 795 8.23 — 970 1150 1380 eBeam (good) 2 3 graphite exposed to air 1890 2000 2310 Stoichiometric films are best achieved Ceric Oxide CeO2 2600 7.3 — eBeam (good) graphite, Ta using reactive evaporation with O2.
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