International Journal of VLSI Design, Microelectronics and Embedded System Volume 4 Issue 1 Analysis of Various Memory Circuits Used In Digital VLSI Tanvi Upaskar, Ganesh Thorave, Prof. Sumita G*, Mayuresh Yerandekar, Siddhesh Mahadik K C College of Engineering and Management Studies Thane, India Corresponding author’s email id:
[email protected]* DOI: http://doi.org/10.5281/zenodo.2652717 Abstract This paper presents comparison of semiconductor memory circuits such as volatile memories like SRAM, DRAM and non-volatile memories like ROM, PROM, EPROM, EEPROM, FLASH (NOR based & NAND based). This comparison is on the basis of some parameters including read speed, write speed, volatility, bits/cell, cell structure, cell density, power consumption, etc. In this paper we also focused on applications of those memory cells based on their characteristics. This paper presents the appropriate choice for selecting memory circuit with the read-write speed, capacity, power consumption. Keywords: Semiconductor memories, Volatility, Flash memory, memory cell, digital. INTRODUCTION non-volatile memory (which holds its data Semiconductor memory cells are capable even if the power is turned off). (See of storing large quantities of digital Figure:-1) information, essential to all digital systems. It is an essential element of VOLATILE MEMORY today's technical world. With the rapid Volatile memory needs power to maintain growth in the requirement for the stored information; it retains its semiconductor memories there have been contents while powered on but when the many types of memory that have emerged. power is interrupted, the stored data is There are basically two types of memory quickly lost. Volatile memory has many such as Volatile memory (which maintains uses including as primary storage its data while the device is powered) and 34 Page 34-44 © MANTECH PUBLICATIONS 2019.