Abcs of Silicon Controlled Rectifiers
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Fundamentals of Microelectronics Chapter 3 Diode Circuits
9/17/2010 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box 1 Chapter 3 Diode Circuits 3.1 Ideal Diode 3.2 PN Junction as a Diode 3.3 Applications of Diodes 2 1 9/17/2010 Diode Circuits After we have studied in detail the physics of a diode, it is time to study its behavior as a circuit element and its many applications. CH3 Diode Circuits 3 Diode’s Application: Cell Phone Charger An important application of diode is chargers. Diode acts as the black box (after transformer) that passes only the positive half of the stepped-down sinusoid. CH3 Diode Circuits 4 2 9/17/2010 Diode’s Action in The Black Box (Ideal Diode) The diode behaves as a short circuit during the positive half cycle (voltage across it tends to exceed zero), and an open circuit during the negative half cycle (voltage across it is less than zero). CH3 Diode Circuits 5 Ideal Diode In an ideal diode, if the voltage across it tends to exceed zero, current flows. It is analogous to a water pipe that allows water to flow in only one direction. CH3 Diode Circuits 6 3 9/17/2010 Diodes in Series Diodes cannot be connected in series randomly. For the circuits above, only a) can conduct current from A to C. CH3 Diode Circuits 7 IV Characteristics of an Ideal Diode V V R = 0⇒ I = = ∞ R = ∞⇒ I = = 0 R R If the voltage across anode and cathode is greater than zero, the resistance of an ideal diode is zero and current becomes infinite. -
VOLTAGE REGULATORS 1. Zener Controlled Transistor Voltage Regulator
VOLTAGE REGULATORS A voltage regulator is a voltage stabilizer that is designed to automatically stabilize a constant voltage level. A voltage regulator circuit is also used to change or stabilize the voltage level according to the necessity of the circuit. Thus, a voltage regulator is used for two reasons:- 1. To regulate or vary the output voltage of the circuit. 2. To keep the output voltage constant at the desired value in-spite of variations in the supply voltage or in the load current. To know more on the basics of this subject, you may also refer Regulated Power Supply. Voltage regulators find their applications in computers, alternators, power generator plants where the circuit is used to control the output of the plant. Voltage regulators may be classified as electromechanical or electronic. It can also be classified as AC regulators or DC regulators. We have already explained about IC Voltage Regulators. Electronic Voltage Regulator All electronic voltage regulators will have a stable voltage reference source which is provided by the reverse breakdown voltage operating diode called zener diode. The main reason to use a voltage regulator is to maintain a constant dc output voltage. It also blocks the ac ripple voltage that cannot be blocked by the filter. A good voltage regulator may also include additional circuits for protection like short circuits, current limiting circuit, thermal shutdown, and over voltage protection. Electronic voltage regulators are designed by any of the three or a combination of any of the three regulators given below. 1. Zener Controlled Transistor Voltage Regulator A zener controlled voltage regulator is used when the efficiency of a regulated power supply becomes very low due to high current. -
ON Semiconductor Is
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. -
Special Diodes 2113
CHAPTER54 Learning Objectives ➣ Zener Diode SPECIAL ➣ Voltage Regulation ➣ Zener Diode as Peak Clipper DIODES ➣ Meter Protection ➣ Zener Diode as a Reference Element ➣ Tunneling Effect ➣ Tunnel Diode ➣ Tunnel Diode Oscillator ➣ Varactor Diode ➣ PIN Diode ➣ Schottky Diode ➣ Step Recovery Diode ➣ Gunn Diode ➣ IMPATT Diode Ç A major application for zener diodes is voltage regulation in dc power supplies. Zener diode maintains a nearly constant dc voltage under the proper operating conditions. 2112 Electrical Technology 54.1. Zener Diode It is a reverse-biased heavily-doped silicon (or germanium) P-N junction diode which is oper- ated in the breakdown region where current is limited by both external resistance and power dissipa- tion of the diode. Silicon is perferred to Ge because of its higher temperature and current capability. As seen from Art. 52.3, when a diode breaks down, both Zener and avalanche effects are present although usually one or the other predominates depending on the value of reverse voltage. At reverse voltages less than 6 V, Zener effect predominates whereas above 6 V, avalanche effect is predomi- nant. Strictly speaking, the first one should be called Zener diode and the second one as avalanche diode but the general practice is to call both types as Zener diodes. Zener breakdown occurs due to breaking of covalent bonds by the strong electric field set up in the depletion region by the reverse voltage. It produces an extremely large number of electrons and holes which constitute the reverse saturation current (now called Zener current, Iz) whose value is limited only by the external resistance in the circuit. -
Technical Details of the Elliott 152 and 153
Appendix 1 Technical Details of the Elliott 152 and 153 Introduction The Elliott 152 computer was part of the Admiralty’s MRS5 (medium range system 5) naval gunnery project, described in Chap. 2. The Elliott 153 computer, also known as the D/F (direction-finding) computer, was built for GCHQ and the Admiralty as described in Chap. 3. The information in this appendix is intended to supplement the overall descriptions of the machines as given in Chaps. 2 and 3. A1.1 The Elliott 152 Work on the MRS5 contract at Borehamwood began in October 1946 and was essen- tially finished in 1950. Novel target-tracking radar was at the heart of the project, the radar being synchronized to the computer’s clock. In his enthusiasm for perfecting the radar technology, John Coales seems to have spent little time on what we would now call an overall systems design. When Harry Carpenter joined the staff of the Computing Division at Borehamwood on 1 January 1949, he recalls that nobody had yet defined the way in which the control program, running on the 152 computer, would interface with guns and radar. Furthermore, nobody yet appeared to be working on the computational algorithms necessary for three-dimensional trajectory predic- tion. As for the guns that the MRS5 system was intended to control, not even the basic ballistics parameters seemed to be known with any accuracy at Borehamwood [1, 2]. A1.1.1 Communication and Data-Rate The physical separation, between radar in the Borehamwood car park and digital computer in the laboratory, necessitated an interconnecting cable of about 150 m in length. -
A 'T97- 7- Art97- 3
June 22, 1965 SHINTAROOSHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Fillied Aug. 19, 1960 6 Sheets-Sheet I A 't97- 7- Art97- 3. fend za June 22, 1965 sHINTARO osHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Filed Aug. 19, 1960 6 Sheets-Sheet 2 Az7-2- ...C I / I I,/ III Asg - F - - June 22, 1965 SHINTARO OSHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Filled Aug. 19, 1960 6 Sheets-Sheet 3 Zz7- 6 - A - G7 - 9 e2f ASA, a A. A1 A. 62. APPS C AMe O) C As if Asa Af A. O) Z/2 Me O) At(6) A2 ; : : : A2 : WarfO) 72AA Merg 3.N. y eaa June 22, 1965 SHINTARO OSHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Filed Aug. 19, 1960 6 Sheets-Sheet 4 Z'67-72. A 't:9-73 - As? A. Ca -- G, Ay + \ 42 a .2A A 7 aia 2 A/ A1 Az/4A, Og /We AZeO A.O. We A4 2% O A7. June 22, 1965 SHINTARO OSHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Filed Aug. 19, l960 6 Sheets-Sheet 5 (o) June 22, 1965 SHINTARO OSHIMA ETAL 3,191,053 SIGN DETECTING SYSTEM Fiied Aug. 19, 1960 6 Sheets-Sheet 6 3,191,053 United States Patent Office Patiented June 22, 1965 2 FIG. 4 is a wave diagram for showing an example of 3,191,053 control time chart for describing the operating principle SIGN DETECTING SYSTEM of the system of the present invention; Shintaro Oshima, Tokyo-to, Hajime Enomoto, ichikawa FIGS. 5 (A) and (B) are characteristic curves for de shi, and Shiyoji Watanabe and Yasuo Koseki, Tokyo-to, 5 scribing an operation principle of the system of the Japan, assignors to Kokusai Denshin Denwa Kablishiki present invention; Kaisha, Tokyo-to, Japan FIGS. -
Power Supply Using Power Transistors
Section F6: Power Supply Using Power Transistors In this section of our studies we will be looking at the design of power supplies using power transistors. We discussed the concepts of rectification and filtering using regular and zener diodes in Section B, and we are going to start this section with a twist on our previous work – adding a BJT. After this introduction using discrete transistors, we will be examining design approaches using integrated circuits – both the 7800 series of integrated circuit regulators and the LM317 adjustable regulator. Power Supply Using Discrete Components In Section B9 (3.4 of your text), we used the zener diode as the voltage-controlling device in the design of a regulated power supply. The figure to the right is a modified version of Figure 8.20 in your text, where the notation has been changed to correctly reproduce Figure 3.39. As we saw earlier, this is a fairly well behaved circuit that supplies a nearly constant output voltage over a wide range of currents. However, as we always must, we can do better. A better regulation may be obtained if the zener diode is connected to the base circuit of a power transistor in the EF (CC) configuration as shown below (Figure 8.21 of your text). In the configuration above, the transistor is referred to as a pass transistor. Because of the current amplifying properties of the BJT in the EF (CC)configuration, the current through the zener diode may be small. With the smaller current, there is little voltage drop across the diode resistance, which allows the zener to approximate an ideal constant voltage source. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Magnetic Amplifiers & Saturable Reactors
Magnetic amplifiers & Saturable reactors Ricciarelli Fabrizio 01/01/2016 Magnetic amplifiers and saturable reactors Summary SECTION I.......................................................................................................................................................... 2 What are the saturable reactors .................................................................................................................. 2 SECTION II ......................................................................................................................................................... 3 Types of reactors .......................................................................................................................................... 3 Saturable reactors .................................................................................................................................... 4 Linear reactors .......................................................................................................................................... 4 Control modules ....................................................................................................................................... 4 SECTION III ........................................................................................................................................................ 5 History ......................................................................................................................................................... -
The Magnetic Amplifier a Lost Technology of the 1950S Anyone Can Build It! ■ by George Trinkaus
Trinkaus.qxd 1/11/2006 1:04 PM Page 68 The Magnetic Amplifier A Lost Technology of the 1950s Anyone can build it! ■ by George Trinkaus ost folks believe that first came the vacuum tube and right on its heels came its successor, the transistor — an historical fact, correct? Not really. Another competitive control technology developed by US and Nazi engineers came in between. It was the magnetic amplifier. Rugged, dependable, EMP- proof, and capable of handling greater electrical powers than either transistor or tube, the magnetic amplifier is a simple device that can be built by anyone. By the 1950s, the magnetic amplifier M was not just an experimental dream languishing in some inventor’s notebook. Nor was this ingenious technology sitting unexploited in patent archives. The mag amp was in manufac- ture in a number of versions and had a clique of boosters, including many electronics engineers, especially within the US Navy. ■ Home-built Mag Amp. 68 February 2006 Trinkaus.qxd 1/11/2006 1:05 PM Page 69 ■ FIGURE 1. Principle of Operation. ■ FIGURE 2. Saturable Reactor. The mag amp is an American that’s the definition of an “amplifier.” core’s permeability (its receptivity to invention and has been used in heavy A mag amp can be put in series magnetism) can be varied by degrees, electrical machinery regulators since with any circuit carrying an alternat- thus controlling a larger AC flow. 1900. In the 1940s, the Germans took ing current and control that flow. No Fully energized, the control coil the American’s relatively crude device, external power supply is required to can reduce the permeability of the assigned their best scientists, invested run the device. -
Robust Wireless Power Transfer Using a Nonlinear Parity–Time-Symmetric Circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1
LETTER doi:10.1038/nature22404 Robust wireless power transfer using a nonlinear parity–time-symmetric circuit Sid Assawaworrarit1, Xiaofang Yu1 & Shanhui Fan1 Considerable progress in wireless power transfer has been made in PT-symmetric systems are invariant under the joint parity and the realm of non-radiative transfer, which employs magnetic-field time reversal operation14,15. In optical systems, where the symmetry coupling in the near field1–4. A combination of circuit resonance conditions can be met by engineering the gain/loss regions and and impedance transformation is often used to help to achieve their coupling, PT-symmetric systems have exhibited unusual efficient transfer of power over a predetermined distance of about properties16–20. A linear PT-symmetric system supports two phases, the size of the resonators3,4. The development of non-radiative depending on the magnitude of the gain/loss relative to the coupling wireless power transfer has paved the way towards real-world strength. In the unbroken or exact phase, eigenmode frequencies applications such as wireless powering of implantable medical remain real and energy is equally distributed between the gain and devices and wireless charging of stationary electric vehicles1,2,5–8. loss regions; in the broken phase, one of the eigenmodes grows expo- However, it remains a fundamental challenge to create a wireless nentially while the other decays exponentially. Recently, the concept power transfer system in which the transfer efficiency is robust of PT symmetry has been extensively explored in laser structures21–24. against the variation of operating conditions. Here we propose Theoretically, the inclusion of nonlinear gain saturation in the analysis theoretically and demonstrate experimentally that a parity–time- of a PT-symmetric system causes that system to reach a steady state symmetric circuit incorporating a nonlinear gain saturation element in a laser-like fashion that still contains the following PT symmetry provides robust wireless power transfer. -
Lawrence Berkeley National Laboratory Recent Work
Lawrence Berkeley National Laboratory Recent Work Title EXPERIMENTAL AND EXTERNAL-PROTON-BEAM MAGNET POWER-SUPPLY SYSTEMS AT THE BEVATRON Permalink https://escholarship.org/uc/item/05r5c6gp Author Jackson, Leslie T. Publication Date 1965-02-11 eScholarship.org Powered by the California Digital Library University of California UCRL-11793 University of California Er'nest 0. lawrence Radiation Laboratory EXPERIMENTAL AND EXTERNAL-PROTON-BEAM MAGNET POWER-SUPPLY SYSTEMS AT THE BEVATRON TWO-WEEK LOAN COPY This is a Library Circulating Copy which may be borrowed for two weeks. For a personal retention copy, call Tech. Info. Division, Ext. 5545 ·Berkeley, California DISCLAIMER This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor the Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or the Regents of the University of California. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or the Regents of the University of California.