Annex L: Serial Presence Detect (SPD) for DDR4 SDRAM Modules DDR4 SPD Document Release 3 UDIMM Revision 1.1 RDIMM Revision 1.1 LRDIMM Revision 1.1 NVDIMM Revision 1.0
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Configuring and Using DDR3 Memory with HP Proliant Gen8 Servers Best Practice Guidelines for Proliant Servers with Intel® Xeon® Processors
Engineering white paper, 2nd Edition Configuring and using DDR3 memory with HP ProLiant Gen8 Servers Best Practice Guidelines for ProLiant servers with Intel® Xeon® processors Table of contents Introduction 3 Overview of DDR3 memory technology 3 Basics of DDR3 memory technology 3 Basics of DIMMs 4 DDR3 DIMM types 5 HP SmartMemory 6 HP Advanced Memory Error Detection 6 ProLiant Gen8 memory architecture for servers with Intel® Xeon® E5-2600 series processors 6 Overview 6 ProLiant Gen8 servers using the Intel® Xeon® E5-2600 series processors 7 ProLiant Gen8 Intel® Xeon® E5-2600 series processors 7 ProLiant Gen8 memory architecture for servers using Intel® Xeon® E5-2400 series processors 8 Overview 8 ProLiant Gen8 servers using Intel® Xeon® E5-2400 series processors 9 ProLiant Gen8 Intel® Xeon® E5-2400 series processors 9 DDR3 DIMMs for ProLiant Gen8 servers 10 Populating memory in ProLiant Gen8 servers 11 ProLiant Gen8 memory slot configurations 11 Population rules for ProLiant Gen8 servers 11 DIMM Population Order 12 Memory system operating speeds 14 General population guidelines 14 Optimizing memory configurations 15 Optimizing for capacity 15 Optimizing for performance 15 Optimizing for lowest power consumption 20 Optimizing for Resiliency 22 Understanding unbalanced memory configurations 23 Memory configurations that are unbalanced across channels 23 Memory configurations that are unbalanced across Processors 23 BIOS Settings for memory 24 Controlling Memory Speed 24 Setting Memory Interleave 25 For more information 26 Appendix A - Sample Configurations for 2P ProLiant Gen8 servers 27 24 DIMM slot servers using Intel® Xeon® E5-2600 processor series 27 16 DIMM Slot Servers using Intel® Xeon® E5-2600 series processors 28 12 DIMM Slot Servers using Intel® Xeon® E5-2400 series processors 29 2 Introduction This paper provides an overview of the new DDR3 memory and its use in the 2 socket HP ProLiant Gen8 servers using the latest Intel® Xeon® E5-2600 series processor family. -
DDR2 SDRAM FBDIMM (DR, FB, X72) Features DDR2 SDRAM FBDIMM MT18HTF12872FD – 1GB MT18HTF25672FD – 2GB
Preliminary‡ 240-Pin 1GB, 2GB DDR2 SDRAM FBDIMM (DR, FB, x72) Features DDR2 SDRAM FBDIMM MT18HTF12872FD – 1GB MT18HTF25672FD – 2GB For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: 240-Pin FBDIMM (MO-256 R/C B) • 240-pin DDR2 fully buffered, dual in-line memory module (FBDIMM) with ECC to detect and report PCB height: 30.35mm (1.19in) channel errors to the host memory controller • Fast data transfer rates: PC2-4200 and PC2-5300 using 533 MT/s and 667 MT/s DDR2 SDRAM components • 3.2 Gb/s and 4.0 Gb/s link transfer rates • High-speed, differential, point-to-point link between host memory controller and the AMB using Options Marking serial, dual-simplex bit lanes – 10-pair southbound (data path to FBDIMM) •Package – 240-pin FBDIMM (lead-free) Y – 14-pair northbound (data path from FBDIMM) 1 • Fault tolerant; can work around a bad bit lane in •Frequency/CL each direction – 3.75ns @ CL = 5 (DDR2-667) -667 • High-density scaling with up to 8 dual-rank modules – 3.75ns @ CL = 4 (DDR2-533) -53E (288 DDR2 SDRAM devices) per channel •PCB height • SMBus interface to AMB for configuration register – 30.35mm (1.19in) access Notes: 1. CL = CAS (READ) latency. • In-band and out-of-band command access • Deterministic protocol – Enables memory controller to optimize DRAM accesses for maximum performance – Delivers precise control and repeatable memory behavior •Automatic DDR2 SDRAM bus and channel calibration • Transmitter de-emphasis to reduce ISI • MBIST and IBIST test functions • Transparent mode for DDR2 SDRAM test support •VDD = VDDQ = +1.8V for DDR2 SDRAM •VREF = 0 .9V SDRAM C/A termination •VCC = 1.5V for advanced memory buffer (AMB) •VDDSPD = +1.7V to +3.6V for SPD EEPROM • Serial presence-detect (SPD) with EEPROM • Gold edge contacts •Dual rank • Supports 95°C operation with 2X refresh (tREFI = 7.8µs at or below 85°C; tREFI = 3.9µs above 85°C) PDF: 09005aef81a2f20c/Source: 09005aef81a2f25b Micron Technology, Inc., reserves the right to change products or specifications without notice. -
Non-ECC Unbuffered DIMM Non-ECC Vs
Quick Guide to DRAM for Industrial Applications 2019 by SQRAM What’s the difference between DRAM & Flash? DRAM (Dynamic Random Access Memory) and Flash are key components in PC systems, but they are different types of semiconductor products with different speeds/capacity/power-off data storage. High Small Type DRAM Flash Cache data transfer through Location close to CPU PCIe BUS Speed/Cost IC Density low high SRAM Capacity Module 32~64GB 2~8TB Capacity DRAM by ns Speed by ms (faster than flash) non-volatile memory: Power-Off volatile memory: data can be stored if NAND Flash data will lost if powered off Status powered off Low Large What are the features of DRAM? High Data Processing Speed Volatile Memory Extremely fast with low latency by RAM is a type of volatile memory. nanoseconds(10-9) access time. Much faster than It retains its data while powered on, but the data will HDD or SSD data speeds. vanish once the power is off. CPU DRAM HDD Extremely Fast Transfer Higher Capacity, Better Performance DRAM is closely connected to the CPU with short DRAM of higher capacity can process more data to access time. The system performance will drop if increase system performance. The more data data is processed directly by storage without DRAM. processed by DRAM, the less HDD processing time. What are the DDR specifications (DDR, DDR2, DDR3, DDR4)? The prefetch length of DDR SDRAM is 2 bits. On DDR2 the prefetch length is increased to 4 bits, and on DDR3 and on DDR DDR 4 it was raised to 8 bits and 16 bits respectively. -
Intel® NUC Products NUC7CJY/NUC7PJY Technical Product Specification
Intel® NUC Products NUC7CJY/NUC7PJY Technical Product Specification Regulatory Models: NUC7JY (Kit/Mini PC) NUC7JYB (Board) February 2018 Order Number: J96982-002 Intel NUC Products NUC7CJY/NUC7PJY Technical Product Specification The Intel NUC Products NUC7CJY/NUC7PJY may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current characterized errata are documented in the Intel NUC Products NUC7CJY/NUC7PJY Specification Update. ii Revision History Revision Revision History Date 001 First release of Intel NUC Products NUC7CJY/NUC7PJY Technical Product January 2018 Specification 002 Spec Change February 2018 Disclaimer This product specification applies to only the standard Intel® NUC Boards, Kits and Mini PCs with BIOS identifier JYGLKCPX.86A. INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS OTHERWISE AGREED IN WRITING BY INTEL, THE INTEL PRODUCTS ARE NOT DESIGNED NOR INTENDED FOR ANY APPLICATION IN WHICH THE FAILURE OF THE INTEL PRODUCT COULD CREATE A SITUATION WHERE PERSONAL INJURY OR DEATH MAY OCCUR. All Intel® NUC Boards are evaluated as Information Technology Equipment (I.T.E.) for use in personal computers (PC) for installation in homes, offices, schools, computer rooms, and similar locations. -
ECE 571 – Advanced Microprocessor-Based Design Lecture 16
ECE 571 { Advanced Microprocessor-Based Design Lecture 16 Vince Weaver http://web.eece.maine.edu/~vweaver [email protected] 4 April 2017 Announcements • HW8 was assigned, read about Newer Intel chips for Thursday • Slow getting back to you about project ideas • Sorry about voice, mild cold 1 How to save Energy in TLB? • Turn off Virtual Memory completely (aside about ARM1176 manual and caches). Can you run Linux without VM? ucLinux • TLB is similar to cache, can make similar optimizations (drowsy, sizing, etc) • Assume in current page (i.e. 1-entry 0-level TLB) (Kadayif, Sivasubramaniam, Kandemir, Kandiraju, Chen. TODAES 2005). 2 (Kadayif,Sivasubramaniam, Kandemir, Kandiraju, Chen. Micro 2002) • Use virtual cache (Ekman and Stenstr¨om,ISLPED 2002) • Switch virtual to physical cache on fly (hybrid) (Basu, Hill, Swift. ISCA 2012) • Dynamically resize the TLB (Delaluz, Kandemir, Sivasubramaniam, Irwin, Vijaykrishnan. ICCD 2013) • Try to keep as much in one page as possible via compiler. (Jeyapaul, Marathe, Shrivastava, VLSI'09) 3 (Lee, Ballapuram. ISLPED'03) 4 DRAM • Single transistor/capacitor pair. (can improve behavior with more transistors, but then less dense) • Compare to SRAM that has 6 transistors (or 4 plus hard-to make resistors with high static power) • In 90nm process, 30fF capacitor, leakage in transistor 1fA. Can hold charge from milliseconds to seconds. • DRAMs gradually lose charge, need to be refreshed. Need to be conservative. Refresh every 32 or 64ms 5 • DRAM read is destructive, always have to write back 6 Diagram DRAM Column Decoder Sense Amps word line bit line Memory Array Row Decoder SRAM WL WL !BL BL !BL BL 7 Low Level • Trench Capacitors • Stacked Capacitors 8 SIMMs/DIMMS • How many chips on DIMM? 8? 9? 9 usually means ECC/parity • Chips x1 x4 x8 bits, how many get output at a time. -
"Low-Power Support Using Texas Instruments SN74SSTV16857 and SN74SSTV16859"
Application Report SCEA020 - February 2001 Low-Power Support Using Texas Instruments SN74SSTV16857 and SN74SSTV16859 DDR-DIMM Registers Stephen M. Nolan Standard Linear & Logic ABSTRACT The Texas Instruments SN74SSTV16857 and SN74SSTV16859 registers support the low-power mode of the DDR-DIMM. This application report explains the low-power mode and the features of the registers that support the low-power mode. Also, the considerations that the system designer must be aware of when implementing the low-power state of a registered memory module are explained. The sequence that must be followed to utilize the register properly is detailed, including the interpretation of the associated register timing specifications. Finally, the different static- and dynamic-current specifications are analyzed, along with examples of how to calculate the dynamic operating current requirement of the registers. Contents Introduction . 2 Background and Features of Registers. 5 Sequence of Entering and Exiting the Low-Power State. 6 Considerations of Register. 6 How tinact and tact Are Characterized. 9 Dynamic- and Static-Current Specifications. 9 ICC Static Standby Current. 9 ICC Static Operating Current. 10 ICCD Dynamic Operating Current – Clock Only. 10 ICCD Dynamic Operating Current – Each Data Input. 11 Calculating Power Consumption in the Application. 11 Summary . 12 Glossary . 12 List of Figures 1 SN74SSTV16857 . 3 2 SN74SSTV16859 . 4 3 Parameter Measurement Information (VDD = 2.5 V ± 0.2 V). 9 1 SCEA020 Introduction The widespread demand for more main-memory capacity and bandwidth in computer systems has lead to the development of the JEDEC standard for DDR-SDRAM-based, 184-pin, registered memory modules. These DDR DIMMs provide twice the data-bus bandwidth of previous-generation single-data-rate (SDR) memory systems. -
SDRAM Memory Systems: Architecture Overview and Design Verification SDRAM Memory Systems: Architecture Overview and Design Verification Primer
Primer SDRAM Memory Systems: Architecture Overview and Design Verification SDRAM Memory Systems: Architecture Overview and Design Verification Primer Table of Contents Introduction . 3 - 4 DRAM Trends . .3 DRAM . 4 - 6 SDRAM . 6 - 9 DDR SDRAM . .6 DDR2 SDRAM . .7 DDR3 SDRAM . .8 DDR4 SDRAM . .9 GDDR and LPDDR . .9 DIMMs . 9 - 13 DIMM Physical Size . 9 DIMM Data Width . 9 DIMM Rank . .10 DIMM Memory Size & Speed . .10 DIMM Architecture . .10 Serial Presence Detect . .12 Memory System Design . .13 - 15 Design Simulation . .13 Design Verification . .13 Verification Strategy . .13 SDRAM Verification . .14 Glossary . .16 - 19 2 www.tektronix.com/memory SDRAM Memory Systems: Architecture Overview and Design Verification Primer Introduction Memory needs to be compatible with a wide variety of memory controller hubs used by the computer DRAM (Dynamic Random Access Memory) is attractive to manufacturers. designers because it provides a broad range of performance Memory needs to work when a mixture of different and is used in a wide variety of memory system designs for manufacturer’s memories is used in the same memory computers and embedded systems. This DRAM memory system of the computer. primer provides an overview of DRAM concepts, presents potential future DRAM developments and offers an overview Open memory standards are useful in helping to ensure for memory design improvement through verification. memory compatibility. DRAM Trends On the other hand, embedded systems typically use a fixed There is a continual demand for computer memories to be memory configuration, meaning the user does not modify larger, faster, lower powered and physically smaller. These the memory system after purchasing the product. -
Product Support Notice © 2013 Avaya Inc
Product Support Notice © 2013 Avaya Inc. All Rights Reserved. PSN # PSN004095u Original publication date: 31-Oct-13, This is Issue #02, published date: Severity/risk level Medium Urgency Optional 12-Dec-13. Name of problem Avaya CS1000 CPPM pack memory module can fail causing service outage Products affected CS1000 CPPM processor pack using Micron Technology memory module(s) with module date codes prior to Jan 2011. Products affected: All early vintages of the CPPM pack that were shipped 2006 thru mid-2011. NTDW61BAE5 - CPPM pack NTDW66AAE5, NTDW66ABE5, - CPPM pack for CS1000M systems NTDW99AAE5, NTDW99ABE5 - CPPM pack for CS1000E systems N0198586 - 1GB 333DDR Memory Upgrade kit The following vintages of the CPPM pack were not introduced until Q3 2011 and should not have the older date code Micron modules on them from initial pack production. There is however a small risk, if customers deployed memory upgrade kits to them in the field. NTDW66ABGS, NTDW66CAE5, - CPPM pack for CS1000M systems NTDW99ABGS, NTDW99CAE5, - CPPM pack for CS1000E systems. Issue#2 – revised Linux commands to include full path ; and added notes about customers with Avaya parts service contracts. Problem description Avaya CS1000 CPPM packs equipped with suspect memory module(s) could experience failure to reboot after being power cycled off/on. Symptom is CPPM pack will not display any information on the console after a power cycle event. The root cause is a failed memory module. The issue correlates to a Micron Technologies product defect involving semiconductor devices on the 1GB DDR333 memory modules with date codes earlier than January 2011. The memory module exhibits early life failure after approximately five (5) years of service. -
Double Data Rate (DDR3) SDRAM Controller IP Core User Guide
Double Data Rate (DDR3) SDRAM Controller IP Core User Guide FPGA-IPUG-02047-2.2 September 2020 Double Data Rate (DDR3) SDRAM Controller IP Core User Guide Disclaimers Lattice makes no warranty, representation, or guarantee regarding the accuracy of information contained in this document or the suitability of its products for any particular purpose. All information herein is provided AS IS and with all faults, and all risk associated with such information is entirely with Buyer. Buyer shall not rely on any data and performance specifications or parameters provided herein. Products sold by Lattice have been subject to limited testing and it is the Buyer's responsibility to independently determine the suitability of any products and to test and verify the same. No Lattice products should be used in conjunction with mission- or safety-critical or any other application in which the failure of Lattice’s product could create a situation where personal injury, death, severe property or environmental damage may occur. The information provided in this document is proprietary to Lattice Semiconductor, and Lattice reserves the right to make any changes to the information in this document or to any products at any time without notice. © 2010-2020 Lattice Semiconductor Corp. All Lattice trademarks, registered trademarks, patents, and disclaimers are as listed at www.latticesemi.com/legal. All other brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject to change without notice. 2 FPGA-IPUG-02047-2.2 Double Data Rate (DDR3) SDRAM Controller IP Core User Guide Contents Acronyms in This Document ................................................................................................................................................ -
Memory Expert Knowledge
Memory Expert Knowledge As the density increased throughout the 1970’s and in the Memory Experts 1980’s, Japanese DRAM manufacturers, who could sell The friendly team of Memory Experts at Mr Memory higher quality modules at lower prices, overtook IBM. 9 y have on average ears experience. They are fully Traditionally DRAM modules have an asynchronous knowledgeable on all things memory. interface, which means that they respond as quickly as Have a read through just some of that knowledge... possible to changes In control inputs. What is DRAM? SDRAM History DRAM stands for Dynamic Random Access Memory. This is the memory that you use in Desktops, Laptops, Synchronous Dynamic Random Access Memory Servers and other devices. A computer stores quickly (SDRAM) is memory that is synchronised with the System accessible data in the form of 0’s and 1’s. It is dynamic Bus (which connects all the major components of a because it refreshes its capacitor charge periodically computer system). Unlike DRAM, SDRAM waits for a with new electricity, compared to the older SRAM (Static clock signal before responding to control inputs. Random Access Memory). Data is stored in the SDRAM is organised into a grid structure (Banks) with capacitors within an integrated circuit (also known as a rows (Word lines) and columns (Bit lines). Data stored is Chip). in blocks and are defined by the coordinates of the row DRAM memory is a volatile memory – which means it and column of the specific information. loses its data very quickly once the power is removed. SDRAM was universally accepted in 1993, with the This is different from NAND Flash Memory used in invention of the Samsung KM48SL2000. -
Flipping Bits in Memory Without Accessing Them: an Experimental Study of DRAM Disturbance Errors
Flipping Bits in Memory Without Accessing Them: An Experimental Study of DRAM Disturbance Errors 1 1 1 Yoongu Kim Ross Daly Jeremie Kim Chris Fallin Ji Hye Lee Donghyuk Lee1 Chris Wilkerson2 Konrad Lai Onur Mutlu1 1Carnegie Mellon University 2Intel Labs Abstract. Memory isolation is a key property of a reliable disturbance errors, DRAM manufacturers have been employ- and secure computing system — an access to one memory ad- ing a two-pronged approach: (i) improving inter-cell isola- dress should not have unintended side effects on data stored tion through circuit-level techniques [22, 32, 49, 61, 73] and in other addresses. However, as DRAM process technology (ii) screening for disturbance errors during post-production scales down to smaller dimensions, it becomes more difficult testing [3, 4, 64]. We demonstrate that their efforts to contain to prevent DRAM cells from electrically interacting with each disturbance errors have not always been successful, and that 1 other. In this paper, we expose the vulnerability of commodity erroneous DRAM chips have been slipping into the field. DRAM chips to disturbance errors. By reading from the same In this paper, we expose the existence and the widespread address in DRAM, we show that it is possible to corrupt data nature of disturbance errors in commodity DRAM chips sold in nearby addresses. More specifically, activating the same and used today. Among 129 DRAM modules we analyzed row in DRAM corrupts data in nearby rows. We demonstrate (comprising 972 DRAM chips), we discovered disturbance this phenomenon on Intel and AMD systems using a malicious errors in 110 modules (836 chips). -
Dynamic Rams from Asynchrounos to DDR4
Dynamic RAMs From Asynchrounos to DDR4 PDF generated using the open source mwlib toolkit. See http://code.pediapress.com/ for more information. PDF generated at: Sun, 10 Feb 2013 17:59:42 UTC Contents Articles Dynamic random-access memory 1 Synchronous dynamic random-access memory 14 DDR SDRAM 27 DDR2 SDRAM 33 DDR3 SDRAM 37 DDR4 SDRAM 43 References Article Sources and Contributors 48 Image Sources, Licenses and Contributors 49 Article Licenses License 50 Dynamic random-access memory 1 Dynamic random-access memory Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory. The main memory (the "RAM") in personal computers is dynamic RAM (DRAM). It is the RAM in laptop and workstation computers as well as some of the RAM of video game consoles. The advantage of DRAM is its structural simplicity: only one transistor and a capacitor are required per bit, compared to four or six transistors in SRAM. This allows DRAM to reach very high densities. Unlike flash memory, DRAM is volatile memory (cf. non-volatile memory), since it loses its data quickly when power is removed. The transistors and capacitors used are extremely small; billions can fit on a single memory chip.