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Growth and Characterisation of Indium Nitride Growth and Characterisation of Indium Nitride A thesis submitted to Cardiff University In Candidate for the degree of Doctor of Philosophy By Hassan Ali Hirshy Division of Electrical and Electronic Engineering School of Engineering Cardiff University United Kingdom December 2007 UMI Number: U585560 All rights reserved INFORMATION TO ALL USERS The quality of this reproduction is dependent upon the quality of the copy submitted. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if material had to be removed, a note will indicate the deletion. Dissertation Publishing UMI U585560 Published by ProQuest LLC 2013. Copyright in the Dissertation held by the Author. Microform Edition © ProQuest LLC. All rights reserved. This work is protected against unauthorized copying under Title 17, United States Code. ProQuest LLC 789 East Eisenhower Parkway P.O. Box 1346 Ann Arbor, Ml 48106-1346 Form: PGR_Submission_200701 NOTICE OF SUBMISSION OF THESIS FORM: a r d if f POSTGRADUATE RESEARCH C UNIVL RSITY I’m YSGOL C a f RD v l9 APPENDIX 1: Specimen layout for Thesis Summary and Declaration/Statements page to be included in a Thesis DECLARATION This work has not previously been accepted in substance for any degree and is not concurrently submitted in candidature for any degree. Signed (candidate) Date . I. £ . STATEMENT 1 This thesis is being submitted in partial fulfillment of the requirements for the degree of ..................................... (insert MCh, MD, MPhil, PhD etc, as appropriate) Signed ..... — .................................................. (candidate) Date ... ... STATEMENT 2 This thesis is the result of my own independent work/investigation, except where otherwise stated. Other sources are acknowledged by explicit references. Signed (candidate) Date STATEMENT 3 I hereby give consent for my thesis, if accepted, to be available for photocopying and for inter- library loan, and for tt)e title and summary to be made available to outside organisations. Signed (candidate) Date .. & 2 / d J. ..... STATEMENT 4: PREVIOUSLY APPROVED BAR ON ACCESS I hereby give consent for my thesis, if accepted, to be available for photocopying and for inter- library loans after expiry of a bar on access previously approved by the Graduate Development Committee. Signed":. (candidate) Date ..P.-?. ...... Acknowledgements I would like to express my sincere gratitude to my supervisor Dr. Richard Perks for his support, and guidance throughout this project. His support has been tremendous, since the day I joined Cardiff University. I’m truly impressed by his “always ready to help” attitude. Working with him has been a great experience. I would like to thank Dr. Scott Butcher and Dr. Marie WintreBert-Fouquet of Macquarie University - Sydney for their invitation to their research facility where I spent four incredible months of my life. My visit to Sydney and the collaboration between us made the first miles in the journey of my PhD. I greatly appreciate their collaboration and friendship. Not to forget, many thanks to Mr. Patrick Chen for providing some information on indium nitride grown by RF sputtering and Remote Plasma Enhanced Chemical Vapour Deposition. I would like to acknowledge the support of the Australian Institute of Nuclear Science and Engineering for the SIMS measurements, the University of Technology -Sydney and the support of the Australian Research Council. I would like also to acknowledge the support of Dr. Oliver Briot of the University of Montpellier for providing indium nitride film grown by Metal Organic Vapour Phase Epitaxy. I wish to offer my sincere thanks and gratitude to Mr. Mahdi Al-Tajir, the Founder of the Al-Tajir Trust, for his generous financial support. I’m overwhelmed by this support which opened the gates of knowledge into my life and gave me a clear vision of the path that I should follow in my life. My deep thanks and prayers for the religious authority Sayyed Muhammed Hussein Fadlullah for his spiritual guidance and support, and for his personal recommendation for the scholarship. I would like to take this opportunity to thank all the school administrative staff, in particular, “research office girls” for their support during my years of study at Cardiff University. I would like also to add all the technician of the school of Engineering who showed great attitude and it was a pleasure to work with them in particular Mr. Rolfe Wheeler-Jones. Special thanks to a very experienced person who became a very close friend and always enlightened me with his knowledge and his genuine attitude or just for being there for just a cup of coffee, Mr. Tyrone Jones. Last, but not least, sincere thanks for the people who without them I would be what I am now, my family. Sincere gratitude to my Dad, Mum, brothers and sister, and of course, my beautiful wife, Nour, who showed me the true meaning of happiness. I would like to thank her for her support and understanding. One last thing to say to my Mum, that whatever I achieve in my life, no matter the success I get, I can never pay you back your prayers for me. Summary Indium nitride (InN) was grown on both c-plane sapphire and borosilicate glass substrates by reactive evaporation. The reactive evaporation growth technique proved to be simple, cost-effective and offered the advantage of low growth temperature with consistency in growing good quality material with high mobilities and relatively low carrier concentrations. The carrier concentration ranged between 1.59*10 17 cm*3 to 4.31 *10 19 cm*3 which is in the same range of the reported value for InN grown by MBE and MOVPE. Furthermore, a mobility as high as 2285 cm 2V* 1s' 1 was achieved with the elevation of the substrate temperature to 210 °C. The crystalline structure showed a strong correlation with the growth temperature. The films were of polycrystalline nature with hexagonal structure and had a tendency to orientate along the vertical c-axis with the increase in the substrate temperature. The distributed values obtained for lattice parameters were attributed to the nitrogen content in the films and the non-stoichiometry of the material. Compositional and chemical analysis by both x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) confirmed that the material was In-rich material. The role of oxygen was also investigated with SIMS analysis, and estimated a presence of oxygen o f ~ 20 at.%. Despite the presence of oxygen level, no evidence of its effect on the band gap was found. Furthermore, the controversy surrounding the band gap was reviewed and investigations on the suggested theories for the discrepancy in the reported values were carried out. List of Publications: 1. “The Nature of Nitrogen Related Point Defects in Common Forms of InN." K. S. A. Butcher, A.J. Fernandes, P. P-T. Chen, M. Wintrebert-Fouquet, H. Timmers, S. Shrestha, H. Hirshv, R. M. Perks, and B. F Usher, J. Appl. Ph\s. 101, 123702, (2007) 2. “Stoichiometry effects and the Moss-Burstein effect for InN” K. S. A. Butcher, H. Hirshv, R. M. Perks, M. Wintrebert-Fouquet, and P. P-T. Chen, phvs. stat. so/, (a) 203, No. 1 (2006). 3. “Low carrier concentration indium nitride grown by reactive”, Wocsdice, Sweden, (2006), H. Hirshv, K.S.A. Butcher, RM. Perks, M. Wintrebert-Fouquet, P. P-T Chen and K.E. Prince. 4 . “Realisation of a Novel GaN/InN Hetrostructure FET Device*9D. Alexandrov, R. Perks, S. Butcher, H. Hirshv, andM Wintrebert-Fouquet, LEC2006, P.95-96, Cornell University conference, USA, (2006). 5. “Variations in the observed band gap o f Indium Nitride” R.AI. Perks, H. Hirshv. Wocsdice. Cardiff (2005). Table of Contents Chapter 1: Introduction Page 1 1.1. Thesis outline ............................................................................................... 5 References............................................................................................................ 7 Chapter 2: Literature review on indium nitride ................................................ 9 2.1. Growth techniques and the influence of growth parameters ..................... 11 2.1.1. Reactive sputtering ................................................................................ 11 2.1.2. Metal organic vapour phase epitaxy (MOVPE) .................................. 17 2.1.3. Molecular beam epitaxy (MBE) ........................................................... 29 2.1.4. Pulsed laser deposition (PLD) .............................................................. 35 2.1.5. Other methods ....................................................................................... 36 2.2. Structural properties of indium nitride ........................................................ 37 2.3. Electrical properties of indium nitride ........................................................ 42 2.4. Optical properties of indium nitride ............................................................ 50 References............................................................................................................ 60 Chapter 3: Growth of indium nitride: Reactive evaporation .......................... 72 3.1. Introduction .................................................................................................. 72 3.2. Reactive evaporation ................................................................................... 72 3.3. Substrate preparation ................................................................................... 75 3.4. The reactive
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