LED As Transmitter and Receiver of Light: a Simple Tool to Demonstration Photoelectric Effect
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												Iii-Nitride Ultraviolet Light-Emitting Diodes: Approaches for the Enhanced Efficiency
Copyright Warning & Restrictions The copyright law of the United States (Title 17, United States Code) governs the making of photocopies or other reproductions of copyrighted material. Under certain conditions specified in the law, libraries and archives are authorized to furnish a photocopy or other reproduction. One of these specified conditions is that the photocopy or reproduction is not to be “used for any purpose other than private study, scholarship, or research.” If a, user makes a request for, or later uses, a photocopy or reproduction for purposes in excess of “fair use” that user may be liable for copyright infringement, This institution reserves the right to refuse to accept a copying order if, in its judgment, fulfillment of the order would involve violation of copyright law. Please Note: The author retains the copyright while the New Jersey Institute of Technology reserves the right to distribute this thesis or dissertation Printing note: If you do not wish to print this page, then select “Pages from: first page # to: last page #” on the print dialog screen The Van Houten library has removed some of the personal information and all signatures from the approval page and biographical sketches of theses and dissertations in order to protect the identity of NJIT graduates and faculty. ABSTRACT III-NITRIDE ULTRAVIOLET LIGHT-EMITTING DIODES: APPROACHES FOR THE ENHANCED EFFICIENCY by Moulik Patel III-nitride ultraviolet (UV) light-emitting diodes (LEDs) offer marvelous potential for a wide range of applications, including air/water purification, surface disinfection, biochemical sensing, cancer cell elimination, and many more. III-nitride semiconductor alloys, especially AlGaN and AlInN, have drawn significant attention due to their significant advantages that include environmental-friendly material composition, compact in size, longer lifetime, low power consumption, and tunable optical emission. - 
												
												Photodiode and LIGHT EMITTING DIODE
Photodiode and LIGHT EMITTING DIODE Presentation by JASWANT KUMAR ROLL NO.-12 rd IT(3 SEM.) 1 About LEDs (1/2) • A light emitting diode (LED) is essentially a PN junction opto- semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. • LEDs convert electrical energy into light energy. LED SYMBOL 2 ABOUT LEDS (2/2) • The most important part of a light emitting diode (LED) is the semi-conductor chip located in the center of the bulb as shown at the right. • The chip has two regions separated by a junction. • The junction acts as a barrier to the flow of electrons between the p and the n regions. 3 LED CIRCUIT • In electronics, the basic LED circuit is an electric power circuit used to power a light-emitting diode or LED. The simplest such circuit consists of a voltage source and two components connect in series: a current-limiting resistor (sometimes called the ballast resistor), and an LED. Optionally, a switch may be introduced to open and close the circuit. The switch may be replaced with another component or circuit to form a continuity tester. 4 HOW DOES A LED WORK? • Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. • For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi- conductor material. 5 Mechanism behind photon emission in LEDs? MechanismMechanism isis “injection“injection Electroluminescence”.Electroluminescence”. - 
												
												DESIGN and EVALUATION of CONTROLS for DRIFT, VIDEO GAIN, and COLOR BALANCE in SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrber
NASA TECHNICAL NOTE @ NASA Tli D-73.3 m % & m U.S.A. m (NASA-TN-D-7333) DESIGN AND EVALUATION OP CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS (NASA) 33 p HC $3.00 CSCL 14E Unclas 4 81/10 23462 Z DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrberg, W. Lane Kelly IV, QR~Q~F~&$.MH?AlMS Carroll W. Rowland, and Ernest E. Burcher GQdhU.* . .b"'3H8 Langley Research Center Humpton, Vu. 23665 NATIONAL AERONAUTICS AND SPACE ADMINISTRATION WASHINGTON, D. C. DECEMBER 1973 1. Report No. a. Government Accasrion No. 3. Recipient's Catalog No. NASA TN D-7333 4. Title and Subtitle 5. Report Date DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, December 1973 VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE 6. Performing Organization Code FACSIMILE CAMERAS 7. Author(s1 8. Performing Organization Rwrt No. Stephen J. Katzberg, W. Lane Kelly IV, Carroll W. Rowland, L-8845 and Ernest E. Burcher 10. Work Unit No. g. Rrforming Organintion Name and Addrerr 502-03-52-04 NASA Langley Research Center 11. Contract or Grant No. Hampton, Va. 23665 13. Type of Repon and Period Covered 12. Sponsoring Agency Name and Addresr Technical Note National Aeronautics and Space Administration 14. Sponsoring Agency Code Washington, D.C. 20546 15:' Subplementary Notes 16. AbsuaR The facsimile camera is an optical-mechanical scanning device which has become an attractive candidate as an imaging system for planetary landers and rovers. This paper presents electronic techniques which permit the acquisition and reconstruction of high-quality images with this device, even under varying lighting conditions. - 
												
												Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits
Sensors and Materials, Vol. 13, No. 4 (2001) 189-206 MYUTokyo S &M0442 Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits Horst Zimmermann Institut fiirElektrische Mess- und Schaltungstechnik, Technische Universitat Wien, Gusshausstrasse, A-1040 Wien, Austria (Received February 28, 2000; accepted February3, 2001) Key words: integrated circuits, integrated optoelectronics, optical receivers, optoelectronic de vices, PIN photodiode, double photodiode, silicon A review of the properties of photodiodes available through the use of standard silicon technologies is presented and some examples of how to improve monolithically integrated photodiodes are shown. The application of these photodiodes in optoelectronic integrated circuits (OEICs) is described. An innovative double photodiode requiring no process modificationsin complementary metal-oxide sem!conductor (CMOS) and bipolar CMOS (BiCMOS) technologies achieves a bandwidth in excess of 360 MHzand data rates exceeding 622 Mb/s. Furthermore, a new PIN photodiode requiring only one additional mask for the integration in a CMOS process is capable of handling a data rate of 1.1 Gb/s. Antireflection coating improves the quantum efficiencyof integrated photodiodes to values of more than 90%. Integrated optical receivers for data communication achieve a high bandwidth and a high sensitivity. Furthermore, an OEIC for application in optical storage systems is introduced. Author's e-mail address: [email protected] 189 l 90 Sensors and Materials, Vol. 13, No. 4 (2001) 1. Introduction Photons with an energy larger than the band gap generate electron-hole pairs in semiconductors. This photogeneration G obeys an exponential law: aP,0 G( x) = -- exp( -ax), Ahv (1) where xis the penetration depth coordinate, P0 is the nonreflectedportion of the incident optical power, A is the light-sensitive area of a photodiode, hv is the energy of the photon, and a is the wavelength-dependent absorption coefficient. - 
												
												Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias. - 
												
												Sudan University of Science and Technology College of Graduate Studies
Sudan University of Science and Technology College of Graduate Studies Increasing The Electrical Conductivity of the semiconductor by Doping and Heating زﯾﺎدة اﻟﻤﻮﺻﻠﯿﺔ اﻟﻜﮭﺮﺑﯿﺔ ﻻﺷﺒﺎه اﻟﻤﻮﺻﻼت ﺑﺎﻟﺘﺸﻮﯾﺐ و اﻟﺤﺮارة Thesis Submitted For Partial Fulfillment of the Requirement for Degree of Master in Physics Prepared by : Seddega Mohammed Noor Diab Supervised by : Dr. Ahmed ELhassan ELfaki December 2016 1 اﻵﯾــــــــــــــــــﺔ ﻗﺎل ﺗﻌﺎﻟﻰ: ﺑﺳم اﻟﻠﮫ اﻟرﺣﻣن اﻟرﺣﯾم ﯾُﻜَﻠّ ِﻒُ اﻟﻠﱠﮫُ (ﻧَﻔْﺴًﺎ ﻻ َإِﻻ ﱠ وُﺳْﻌَﮭَﺎ ﻟَﮭَﺎ ﻣَﺎ ﻛَﺴَﺒَﺖْ و َﻋَﻠَﯿْﮭَﺎ ﻣَﺎ اﻛْﺘَﺴَﺒَﺖْ رَﺑﱠﻨَﺎ ﻻ َ ﻧﱠﺴِﯿﻨَﺎ أَوْ ﺗُﺆَاﺧِﺬْﻧَﺎ أَﺧْﻄَﺄ إِن ْﻧَﺎ رَﺑﱠﻨَﺎ و َﻻ َ ﺗَﺤْﻤِﻞْ ﻋَﻠَﯿْﻨَﺎ إِﺻْﺮًا ﻛَﻤَﺎ ﺣَﻤَﻠْﺘَﮫُ ﻋَﻠَﻰ َ ﻣِﻦ ﻗَﺒْﻠِﻨَﺎ رَﺑﱠﻨَﺎاﻟ و ﱠﺬِﯾﻦَﻻ َ ﺗُﺤَﻤِّﻠْﻨَﺎ ﻣَﺎ ﻻ َ طَﺎﻗَﺔَ ﻟَﻨَﺎ ﺑِﮫِ و َاﻋْﻒُ ﻋَﻨﱠﺎ و َاﻏْﻔِﺮْ ﻟَﻨَﺎ و َارْﺣَﻤْﻨَﺎ أَﻧﺖَ ﻣَﻮْﻻ َ ﻧَﺎ ﻓَﺎﻧﺼُﺮْﻧَﺎ ﻋَﻠَﻰ ﻘَﻮْمِاﻟْ اﻟْﻜَﺎﻓِﺮ ِﯾﻦَ ) ﺻدق اﻟﻠﮫ اﻟﻌظﯾم ﺳورة اﻟﺑﻘرة اﻷﯾﺔ (286) Dedication To whom he strives to bless comfort and welfare and never stints what he owns to push me in the success way who I taught me to promote life stairs wisely and patiently, to my dearest father To the Spring that never stops giving, to my mother who weaves my happiness with strings from her merciful heart To whose love flows in my veins, and my heart always remembers them, to my brothers ,sisters and my fiends To those who taught us letters of gold and words of jewel of the utmost and sweetest sentences in the whole knowledge. Who reworded to us their knowledge simply and from their thoughts made a lighthouse guides us through the knowledge and success path, To our honored teachers and professors. - 
												
												Simulating Headlamp Illumination Using Photometric Light Clusters
2009-01-0110 Simulating Headlamp Illumination Using Photometric Light Clusters William T.C. Neale, David R. Hessel Kineticorp, LLC Copyright © 2009 SAE International ABSTRACT which and the degree to which something is visible. Current methods exist fore evaluating the limits of Assessing the ability of a driver to see objects, visibility which rely on replicating as closely as possible pedestrians, or other vehicles at night is a necessary the conditions present at the time of the accident and precursor to determining if that driver could have performing an in situ evaluation, through observation avoided a nighttime crash. The visibility of an object at and light measurement (Adrian, 1998, pp. 181-88; Klein, night is largely due to the luminance contrast between 1992; Owens, 1989). the object and its background. This difference depends on many factors, one of which is the amount of However, replicating the lighting conditions under which illumination produced by a vehicle’s headlamps. This an accident occurred can be difficult and expensive and paper focuses on a method for digitally modeling a may be impossible if the accident site no longer exists or vehicle headlamp, such that the illumination produced by has changed significantly. If one were able to digitally the headlamps can be evaluated. The paper introduces simulate the accident environment these constraints the underlying concepts and a methodology for could, in many cases, be eliminated. However, creating simulating, in a computer environment, a high-beam a simulated environment would have its own obstacles, headlamp using a computer generated light cluster. In including the need to accurately model the various light addition, the results of using this methodology are sources in that environment. - 
												
												Introduction to Semiconductor
Introduction to semiconductor Semiconductors: A semiconductor material is one whose electrical properties lie in between those of insulators and good conductors. Examples are: germanium and silicon. In terms of energy bands, semiconductors can be defined as those materials which have almost an empty conduction band and almost filled valence band with a very narrow energy gap (of the order of 1 eV) separating the two. Types of Semiconductors: Semiconductor may be classified as under: a. Intrinsic Semiconductors An intrinsic semiconductor is one which is made of the semiconductor material in its extremely pure form. Examples of such semiconductors are: pure germanium and silicon which have forbidden energy gaps of 0.72 eV and 1.1 eV respectively. The energy gap is so small that even at ordinary room temperature; there are many electrons which possess sufficient energy to jump across the small energy gap between the valence and the conduction bands. 1 Alternatively, an intrinsic semiconductor may be defined as one in which the number of conduction electrons is equal to the number of holes. Schematic energy band diagram of an intrinsic semiconductor at room temperature is shown in Fig. below. b. Extrinsic Semiconductors: Those intrinsic semiconductors to which some suitable impurity or doping agent or doping has been added in extremely small amounts (about 1 part in 108) are called extrinsic or impurity semiconductors. Depending on the type of doping material used, extrinsic semiconductors can be sub-divided into two classes: (i) N-type semiconductors and (ii) P-type semiconductors. 2 (i) N-type Extrinsic Semiconductor: This type of semiconductor is obtained when a pentavalent material like antimonty (Sb) is added to pure germanium crystal. - 
												
												Floating-Gate Transistor Photodetector
University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Mechanical & Materials Engineering Faculty Mechanical & Materials Engineering, Publications Department of 10-10-2017 Floating-Gate Transistor Photodetector Jinsong Huang University of Nebraska-Lincoln, [email protected] Yongbo Yuan Lincoln, NE Follow this and additional works at: https://digitalcommons.unl.edu/mechengfacpub Part of the Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, and the Other Mechanical Engineering Commons Huang, Jinsong and Yuan, Yongbo, "Floating-Gate Transistor Photodetector" (2017). Mechanical & Materials Engineering Faculty Publications. 393. https://digitalcommons.unl.edu/mechengfacpub/393 This Article is brought to you for free and open access by the Mechanical & Materials Engineering, Department of at DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in Mechanical & Materials Engineering Faculty Publications by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. THULHUILUWUTTURUS009786857B2 (12 ) United States Patent ( 10 ) Patent No. : US 9 ,786 , 857 B2 Huang et al. ( 45 ) Date of Patent : Oct . 10 , 2017 ( 54 ) FLOATING -GATE TRANSISTOR ( 58 ) Field of Classification Search PHOTODETECTOR CPC .. .. .. HO1L 31/ 1136 ; HO1L 51/ 0052 ; HOLL 51/ 428 ; YO2E 10 / 549 (71 ) Applicant : NUtech Ventures, Lincoln , NE (US ) See application file for complete search history . ( 72 ) Inventors : Jinsong Huang , Lincoln , NE (US ) ; ( 56 ) References Cited Yongbo Yuan , Lincoln , NE (US ) U . S . PATENT DOCUMENTS ( 73 ) Assignee : NUtech Ventures, Lincoln , NE (US ) 2007/ 0063304 A1 * 3 / 2007 Matsumoto .. B82Y 10 / 00 257 /462 ( * ) Notice : Subject to any disclaimer, the term of this 2010 /0155707 A1* 6 /2010 Anthopoulos .. B82Y 10 /00 patent is extended or adjusted under 35 257 /40 U . - 
												
												Bipolar Junction Transistor As a Detector for Measuring in Diagnostic X-Ray Beams
2013 International Nuclear Atlantic Conference - INAC 2013 Recife, PE, Brazil, November 24-29, 2013 ASSOCIAÇÃO BRASILEIRA DE ENERGIA NUCLEAR - ABEN ISBN: 978-85-99141-05-2 BIPOLAR JUNCTION TRANSISTOR AS A DETECTOR FOR MEASURING IN DIAGNOSTIC X-RAY BEAMS Francisco A. Cavalcanti1,2, David S. Monte1,2, Aline N. Alves1,2, Fábio R. Barros2, Marcus A. P. Santos2, and Luiz A. P. Santos1,2 1 Departamento de Energia Nuclear Universidade Federal de Pernambuco Av. Prof. Luiz Freire, 1000 50740-540 Recife, PE [email protected] 2 Centro Regional de Ciências Nucleares do Nordeste (CRCN-NE / CNEN) Av. Prof. Luiz Freire, 1 50740-540 Recife, PE [email protected] ABSTRACT Photodiode and phototransistor are the most frequently used devices for measuring ionizing radiation in medical applications. The cited devices have the operating principle well known, however the bipolar junction transistor (BJT) is not a typical device used as a detector for measuring some physical quantities for diagnostic radiation. In fact, a photodiode, for example, has an area about 10 mm square and a BJT has an area which can be more than 10 thousands times smaller. The purpose of this paper is to bring a new technique to estimate some physical quantities or parameters in diagnostic radiation; for example, peak kilovoltage (kVp), deep dose measurements. The methodology for each type of evaluation depends on the energy range of the radiation and the physical quantity or parameter to be measured. Actually, some characteristics of the incident radiation under the device can be correlated with the readout signal, which is a function of the electrical currents in the electrodes of the BJT: Collector, Base and Emitter. - 
												
												Designing Photodiode Amplifier Circuits with Opa128
® DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier RS achieves its 75fA maximum bias current without compro- mise. Using standard design techniques, serious perfor- I R C mance trade-offs were required which sacrificed overall P J J amplifier performance in order to reach femtoamp (fA = 10–15 A) bias currents. IP = photocurrent RJ = shunt resistance of diode junction CJ = junction capacitance UNIQUE DESIGN MINIMIZES R = series resistance PERFORMANCE TRADE-OFFS S FIGURE 1. Photodiode Equivalent Circuit. Small-geometry FETs have low bias current, of course, but FET size reduction reduces transconductance and increases noise dramatically, placing a serious restriction on perfor- Responsivity ≈ 109V/W 5pF mance when low bias current is achieved simply by making Bandwidth: DC to ≈ 30Hz input FETs extremely small. Unfortunately, larger geom- Offset Voltage ≈ ±485µV etries suffer from high gate-to-substrate isolation diode leak- HP 109Ω age (which is the major contribution to BIFET® amplifier 5082-4204 input bias current). Replacing the reverse-biased gate-to-substrate isolation di- 2 6 OPA128LM ode structure of BlFETs with dielectric isolation removes 3 this large leakage current component which, together with a 8 noise-free cascode circuit, special FET geometry, and ad- 109Ω vanced wafer processing, allows far higher Difet ® perfor- mance compared to BIFETs. FIGURE 2. High-Sensitivity Photodiode Amplifier. HOW TO IMPROVE PHOTODIODE AMPLIFIER PERFORMANCE An important electro-optical application of FET op amps is √ for photodiode amplifiers. The unequaled performance of eOUT = 4k TBR the OPA128 is well-suited for very high sensitivity detector k: Boltzman’s constant = 1.38 x 10–23 J/K ° designs. - 
												
												Mos2 Based Photodetectors: a Review
sensors Review MoS2 Based Photodetectors: A Review Alberto Taffelli *, Sandra Dirè , Alberto Quaranta and Lucio Pancheri Department of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento, Italy; [email protected] (S.D.); [email protected] (A.Q.); [email protected] (L.P.) * Correspondence: [email protected] Abstract: Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs. Keywords: MoS2; TMD; photodetector; heterostructure; thin film Citation: Taffelli, A.; Dirè, S.; Quaranta, A.; Pancheri, L.