Studies in the Thermal Decomposition of Metallic Alkyls
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TR-499: Indium Phosphide (CASRN 22398-80-7) in F344/N Rats And
NTP TECHNICAL REPORT ON THE TOXICOLOGY AND CARCINOGENESIS STUDIES OF INDIUM PHOSPHIDE (CAS NO. 22398-80-7) IN F344/N RATS AND B6C3F1 MICE (INHALATION STUDIES) NATIONAL TOXICOLOGY PROGRAM P.O. Box 12233 Research Triangle Park, NC 27709 July 2001 NTP TR 499 NIH Publication No. 01-4433 U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES Public Health Service National Institutes of Health FOREWORD The National Toxicology Program (NTP) is made up of four charter agencies of the U.S. Department of Health and Human Services (DHHS): the National Cancer Institute (NCI), National Institutes of Health; the National Institute of Environmental Health Sciences (NIEHS), National Institutes of Health; the National Center for Toxicological Research (NCTR), Food and Drug Administration; and the National Institute for Occupational Safety and Health (NIOSH), Centers for Disease Control and Prevention. In July 1981, the Carcinogenesis Bioassay Testing Program, NCI, was transferred to the NIEHS. The NTP coordinates the relevant programs, staff, and resources from these Public Health Service agencies relating to basic and applied research and to biological assay development and validation. The NTP develops, evaluates, and disseminates scientific information about potentially toxic and hazardous chemicals. This knowledge is used for protecting the health of the American people and for the primary prevention of disease. The studies described in this Technical Report were performed under the direction of the NIEHS and were conducted in compliance with NTP laboratory health and safety requirements and must meet or exceed all applicable federal, state, and local health and safety regulations. Animal care and use were in accordance with the Public Health Service Policy on Humane Care and Use of Animals. -
The Atmospheric Chemical Vapour Deposition of Coatings on Glass
The Atmospheric Chemical Vapour Deposition Of Coatings On Glass. by Kevin David Sanderson, B.Sc. A thesis submitted to Imperial College of Science Technology and Medicine for the degree of Doctor of Philosophy January, 1996 The copyright of this thesis rests with the author and no quotation from it or information derived from it may be published without the prior written consent of the author. Some of the material presented in this thesis is of a confidential nature. It is therefore requested that anyone reading this thesis maintains this confidentiality until the thesis becomes publicly available. Abstract: The deposition of thin films of indium oxide, tin doped indium oxide (ITO) and titanium nitride for solar control applications have been investigated by Atmospheric Chemical Vapour Deposition (APCVD). Experimental details of the deposition system and the techniques used to characterise the films are presented. Results from investigations into the deposition parameters, the film microstructure and film material properties are discussed. A range of precursors were investigated for the deposition of indium oxide. The effect of pre-mixing the vaporised precursor with an oxidant source and the deposition temperature has been studied. Polycrystalline In203 films with a resistivity of 1.1 - 3 x 10-3 ) cm were obtained with In(thd)3 , oxygen and nitrogen. The growth of ITO films from In(thd)3, oxygen and a range of tin dopants is also presented. The effect of the dopant precursor, the doping concentration, deposition temperature and the effect of additives on film growth and microstructure is discussed. Control over the preferred orientation growth of ITO has been achieved by the addition of acetate species during film growth. -
Comparison of Trimethylgallium and Triethylgallium As “Ga” Source
Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma- assisted atomic layer deposition Mustafa AlevliAli Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli Citation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A137 (2016); doi: 10.1116/1.4937725 View online: http://dx.doi.org/10.1116/1.4937725 View Table of Contents: http://avs.scitation.org/toc/jva/34/1 Published by the American Vacuum Society Articles you may be interested in Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A12501A125 (2015); 10.1116/1.4936230 Atomic layer deposition of GaN at low temperatures Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, 01A12401A124 (2011); 10.1116/1.3664102 Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, 045203045203 (2016); 10.1063/1.4946786 Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, (1998); 10.1116/1.577146 Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, -
Catalytic Asymmetric Addition of Diorganozinc Reagents to N
Catalytic asymmetric addition of diorganozinc SPECIAL FEATURE reagents to N-phosphinoylalkylimines Alexandre Coˆ te´ , Alessandro A. Boezio, and Andre´ B. Charette* Department of Chemistry, University of Montreal, P.O. Box 6128, Station Downtown, Montreal, QC, Canada H3C 3J7 Edited by Jack Halpern, University of Chicago, Chicago, IL, and approved February 4, 2004 (received for review October 31, 2003) The synthesis of ␣-chiral amines bearing two alkyl groups has been hampered by the accessibility and stability of the alkylimine precursor. Herein, we report an efficient strategy to generate the alkyl-substituted imine in situ that is compatible with the Me- DuPHOS monoxide⅐Cu(I) catalyzed addition of diorganozinc re- agents. The sulfinic acid adduct of the imine is readily prepared by mixing diphenylphosphinic amide, the aldehyde, and sulfinic acid. The sulfinic acid adduct is generally isolated by filtration. The addition of diorganozinc reagents in the presence of Me-DuPHOS monoxide⅐Cu(I) and the in situ-generated imines affords the cor- Fig. 1. Bioactive ␣-chiral amines. responding ␣-chiral amines in high yields and enantiomeric excesses. sensitive imines from stable precursors has been a strategy that he synthesis of ␣-chiral amines using the catalytic asymmetric has been quite successful in a number of cases. Typically, a stable Taddition of diorganozinc reagents has produced very exciting imine adduct is used as a precursor and is converted to the imine results in recent years (1–3). This very important subunit is in situ (Scheme 2). The method involves the use of a leaving ␣ CHEMISTRY commonly found in many pharmaceuticals and other biologically group (LG) on the -carbon of the N-protected amine. -
Pyrophoric Materials
Appendix A PYROPHORIC MATERIALS Pyrophoric materials react with air, or with moisture in air. Typical reactions which occur are oxidation and hydrolysis, and the heat generated by the reactions may ignite the chemical. In some cases, these reactions liberate flammable gases which makes ignition a certainty and explosion a real possibility. Examples of pyrophoric materials are shown below. (List may not be complete) (a) Pyrophoric alkyl metals and derivatives Groups Dodecacarbonyltetracobalt Silver sulphide Dialkytzincs Dodecacarbonyltriiron Sodium disulphide Diplumbanes Hexacarbonylchromium Sodium polysulphide Trialkylaluminiums Hexacarbonylmolybdenum Sodium sulphide Trialkylbismuths Hexacarbonyltungsten Tin (II) sulphide Nonacarbonyldiiron Tin (IV) sulphide Compounds Octacarbonyldicobalt Titanium (IV) sulphide Bis-dimethylstibinyl oxide Pentacarbonyliron Uranium (IV) sulphide Bis(dimethylthallium) acetylide Tetracarbonylnickel Butyllithium (e) Pyrophoric alkyl non-metals Diethylberyllium (c) Pyrophoric metals (finely divided state) Bis-(dibutylborino) acetylene Bis-dimethylarsinyl oxide Diethylcadmium Caesium Rubidium Bis-dimethylarsinyl sulphide Diethylmagnesium Calcium Sodium Bis-trimethylsilyl oxide Diethylzinc Cerium Tantalum Dibutyl-3-methyl-3-buten-1-Yniborane Diisopropylberyllium Chromium Thorium Diethoxydimethylsilane Dimethylberyllium Cobalt Titanium Diethylmethylphosphine Dimethylbismuth chloride Hafnium Uranium Ethyldimthylphosphine Dimethylcadmium Iridium Zirconium Tetraethyldiarsine Dimethylmagnesium Iron Tetramethyldiarsine -
Chemical List
1 EXHIBIT 1 2 CHEMICAL CLASSIFICATION LIST 3 4 1. Pyrophoric Chemicals 5 1.1. Aluminum alkyls: R3Al, R2AlCl, RAlCl2 6 Examples: Et3Al, Et2AlCl, EtAlCl2, Me3Al, Diethylethoxyaluminium 7 1.2. Grignard Reagents: RMgX (R=alkyl, aryl, vinyl X=halogen) 8 1.3. Lithium Reagents: RLi (R = alkyls, aryls, vinyls) 9 Examples: Butyllithium, Isobutyllithium, sec-Butyllithium, tert-Butyllithium, 10 Ethyllithium, Isopropyllithium, Methyllithium, (Trimethylsilyl)methyllithium, 11 Phenyllithium, 2-Thienyllithium, Vinyllithium, Lithium acetylide ethylenediamine 12 complex, Lithium (trimethylsilyl)acetylide, Lithium phenylacetylide 13 1.4. Zinc Alkyl Reagents: RZnX, R2Zn 14 Examples: Et2Zn 15 1.5. Metal carbonyls: Lithium carbonyl, Nickel tetracarbonyl, Dicobalt octacarbonyl 16 1.6. Metal powders (finely divided): Bismuth, Calcium, Cobalt, Hafnium, Iron, 17 Magnesium, Titanium, Uranium, Zinc, Zirconium 18 1.7. Low Valent Metals: Titanium dichloride 19 1.8. Metal hydrides: Potassium Hydride, Sodium hydride, Lithium Aluminum Hydride, 20 Diethylaluminium hydride, Diisobutylaluminum hydride 21 1.9. Nonmetal hydrides: Arsine, Boranes, Diethylarsine, diethylphosphine, Germane, 22 Phosphine, phenylphosphine, Silane, Methanetellurol (CH3TeH) 23 1.10. Non-metal alkyls: R3B, R3P, R3As; Tributylphosphine, Dichloro(methyl)silane 24 1.11. Used hydrogenation catalysts: Raney nickel, Palladium, Platinum 25 1.12. Activated Copper fuel cell catalysts, e.g. Cu/ZnO/Al2O3 26 1.13. Finely Divided Sulfides: Iron Sulfides (FeS, FeS2, Fe3S4), and Potassium Sulfide 27 (K2S) 28 REFERRAL -
Alfa Laval Black and Grey List, Rev 14.Pdf 2021-02-17 1678 Kb
Alfa Laval Group Black and Grey List M-0710-075E (Revision 14) Black and Grey list – Chemical substances which are subject to restrictions First edition date. 2007-10-29 Revision date 2021-02-10 1. Introduction The Alfa Laval Black and Grey List is divided into three different categories: Banned, Restricted and Substances of Concern. It provides information about restrictions on the use of Chemical substances in Alfa Laval Group’s production processes, materials and parts of our products as well as packaging. Unless stated otherwise, the restrictions on a substance in this list affect the use of the substance in pure form, mixtures and purchased articles. - Banned substances are substances which are prohibited1. - Restricted substances are prohibited in certain applications relevant to the Alfa Laval group. A restricted substance may be used if the application is unmistakably outside the scope of the legislation in question. - Substances of Concern are substances of which the use shall be monitored. This includes substances currently being evaluated for regulations applicable to the Banned or Restricted categories, or substances with legal demands for monitoring. Product owners shall be aware of the risks associated with the continued use of a Substance of Concern. 2. Legislation in the Black and Grey List Alfa Laval Group’s Black and Grey list is based on EU legislations and global agreements. The black and grey list does not correspond to national laws. For more information about chemical regulation please visit: • REACH Candidate list, Substances of Very High Concern (SVHC) • REACH Authorisation list, SVHCs subject to authorization • Protocol on persistent organic pollutants (POPs) o Aarhus protocol o Stockholm convention • Euratom • IMO adopted 2015 GUIDELINES FOR THE DEVELOPMENT OF THE INVENTORY OF HAZARDOUS MATERIALS” (MEPC 269 (68)) • The Hong Kong Convention • Conflict minerals: Dodd-Frank Act 1 Prohibited to use, or put on the market, regardless of application. -
The East African Sub-Regional Project
UNEPIUNDP/DUTCH Joint Project on Environmental Law UNEP and Institutions in Africa THE EAST AFRICAN SUB-REGIONAL PROJECT DEVELOPMENT AND HARMONISATION OF ENVIRONMENTAL LAWS VOLUME 4 DECEMBER 1999 ,44 UNEP/UNDP/DUTCH Joint Project on Environmental Law and Institutions in Africa UNEP UWD TILE EAST AFRICAN SUB-REGIONAL PROJECT DEVELOPMENT AND HARMONISATION OF ENVIRONMENTAL LAWS VOLUME 4 REPORT ON THE DEVELOPMENT AND HARMONISATION OF LAWS ON HAZARDOUS AND NON-HAZARDOUS WASTES 7$ ? 4 + December 1999 ISBN: 92-807-1887-8 PREFACE Environmental law is an essential tool for the governance East African countries are focused on issues which are and management of the environment and natural resources. essentially of sub-regional character. The management of the It is the foundation of national and regional policies and Joint Project is based at UNEP within its environmental law actions to ensure that the use of natural resources is done activities and is directed by a Task Manager, who works under equitably and sustainably. guidance of a Steering Committee. Members of the Steering Committee are UNEP, UNDP, FAO, The World Bank, IUCN In the East African sub-regional countries of Kenya, Tanzania Environmental Law Centre and The Dutch Government. and Uganda have, since 1995, been developing and harmoning various environmental laws in selected sectors THE PROCESS FOR DEVELOPMENT AND within their region. The process of developing and HARMONiZATION OF THE LAWS harmonizing environmental laws is intended to lead to the enactment or amendment of the internal legislative, regulatory Representatives of the three governments met in February and administrative framework of each country. Such change 1995 to work out general principles and modalities for their has been harmonized at a sub-regional level where the three cooperation. -
Open MYO THEIN-Phd Dissertation
The Pennsylvania State University The Graduate School Department of Engineering Science and Mechanics BIOCHIPS EMPLOYING MICROELECTRODES AND MICROTRANSDUCERS FOR CHARACTERIZATION AND PERMEABILIZATION OF CELL MEMBRANE AT THE WHOLE–CELL AND CELLULAR LEVEL A Dissertation in Engineering Science and Mechanics by Myo Min Thein © 2010 Myo Min Thein Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy December 2010 The dissertation of Myo Min Thein was reviewed and approved* by the following: Jian Xu Associate Professor of Engineering Science and Mechanics and Adjunct Professor of Electrical Engineering Thesis Advisor and Chair of Committee Bernhard R. Tittmann Schell Professor of Engineering Science and Mechanics Yinong Yang Associate Professor of Plant Pathology Sulin Zhang Assistant Professor of Engineering Science and Mechanics Judith A. Todd P. B. Breneman Department Head Chair Head of the Department of Engineering Science and Mechanics * Signatures are on file in the Graduate School. ii Abstract In this study, two types of biochips, Integrated Microelectrode Array (IMA) chip and Ultrasonic Micro–Transducer Array (UMTA) biochip, were designed and micro– fabricated. The IMA chip employs cell–size microelectrode array architecture in order to electrically characterize cellular components, especially the properties of cell membrane, at the single–cell level. The UMTA biochip consists of arrays of high–aspect–ratio piezoelectric micro–transducers that are employed to efficiently permeabilize the cell membrane -
Title Exploration of Dimethylzinc-Mediated Radical Reactions
Title Exploration of Dimethylzinc-Mediated Radical Reactions. Author(s) Yamada, Ken-Ichi; Tomioka, Kiyoshi Citation The Chemical Record (2015), 15(5): 854-871 Issue Date 2015-10 URL http://hdl.handle.net/2433/203021 This is the peer reviewed version of the following article: Yamada, K.-i. and Tomioka, K. (2015), Exploration of Dimethylzinc-Mediated Radical Reactions. Chem. Rec., 15: 854‒871, which has been published in final form at http://dx.doi.org/10.1002/tcr.201500017. This article may be used for non-commercial purposes in accordance with Wiley Right Terms and Conditions for Self-Archiving.; The full-text file will be made open to the public on 17 JUL 2016 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.; This is not the published version. Please cite only the published version.; この論文は出版社版でありません。引用の際に は出版社版をご確認ご利用ください。 Type Journal Article Textversion author Kyoto University PersonalPersonal AccountAccount THE CHEMICAL Exploration of Dimethylzinc- RECORD Mediated Radical Reactions THE CHEMICAL RECORD Ken-ichi Yamada,[a] and Kiyoshi Tomioka[b] [a] Graduate School of Pharmaceutical Sciences, Kyoto University E-mail: [email protected] [b] Department of Medicinal Chemistry, Faculty of Pharmaceutical Sciences, Doshisha Women's College of Liberal Arts E-mail: [email protected] Received: [will be filled in by the editorial staff] Published online: [will be filled in by the editorial staff] ABSTRACT: In this account, our studies on radical reactions that are promoted by dimethylzinc and air are described. Advantages of this reagent and differences from conventional radical initiators, such as triethylborane, are discussed. Keywords: radical reaction, dimethylzinc, C(sp3)–H bond functionalization, C–C bond formation, Umpolung Introduction It has been long time since the word "radical" changed its useful functional group transformations via a radical meaning in chemistry. -
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A Thesis Submitted for the Degree of PhD at the University of Warwick Permanent WRAP URL: http://wrap.warwick.ac.uk/90802 Copyright and reuse: This thesis is made available online and is protected by original copyright. Please scroll down to view the document itself. Please refer to the repository record for this item for information to help you to cite it. Our policy information is available from the repository home page. For more information, please contact the WRAP Team at: [email protected] warwick.ac.uk/lib-publications Reactions and Co-ordination Chemistry of Indium Trialkyls and Trihalides. Ian Alan Degnan A thesis submitted for the degree of Doctor of Philosophy. University of Warwick, Department of Chemistry. Septem ber 1989 To Mam and Dad -for making this possible. Contents. Page. Chapter 1: Introduction. Group 13 Elements. 4 Co-ordination Chemistry of the Indium Trihalides. 9 Mono-Complexes of Indium Trihalides. 10 Bis-Complexes of Indium Trihalides. 12 Tris-Complexes of Indium Trihalides. 17 Unusual Indium Trihalide Complexes. 20 Phosphine Complexes of Indium Triiodide. 22 Metathetical Reactions of Indium Trihalides. 30 Organometallic Derivatives of Indium. 33 Organoindium Halides. 33 Organoindium Compounds. 37 Reactions of Organoindium Compounds. 39 Control of Oligomerisation in Indium Compounds. 55 Chapter 2. Phosphine Complexes of Indium Trihalides. 58 Introduction. 59 Mono-Phosphine Complexes of Indium Triiodide. 60 X-ray Diffraction Study of InCI3(PMe3)2. 83 Indium Triiodide Complexes of Diphos. 86 Chapter 3. Metathetical Reactions of Indium Trihalides. 94 Introduction. 95 Reaction of Indium Triiodide Phosphine Complexes with Methyllithium. 96 Reaction of Indium Triiodide Triphenylphosphine Complex with Methyllithium. -
Gallium in 2017 (PDF)
2017 Minerals Yearbook GALLIUM [ADVANCE RELEASE] U.S. Department of the Interior April 2020 U.S. Geological Survey Gallium By Brian W. Jaskula Domestic survey data and tables were prepared by Wanda G. Wooten, statistical assistant. Low-grade primary gallium was recovered globally as a gallium production was 5% from 2007 through 2017. World byproduct of processing bauxite and zinc ores. No domestic high-grade secondary refined gallium production increased at a low-grade primary gallium was recovered in 2017. Imports CAGR of 7%. World gallium consumption, which increased at of gallium metal and gallium arsenide (GaAs) wafers plus a CAGR of 6% from 2007 through 2017, was estimated to have domestically refined and recycled gallium continued to account been 355 t in 2017. for all U.S. gallium consumption (metal and gallium in GaAs). Metal imports were 93% higher than those in 2016 (table 1). Production The leading sources of imported gallium metal were, in No domestic production of low-grade primary gallium was descending order, China (including Hong Kong), the United reported in 2017. Neo Performance Materials Inc. (Canada) Kingdom, France, Ukraine, Russia, and the Republic of Korea recovered gallium from new scrap materials, predominantly (table 4). A significant portion of imports was thought to be those generated during the production of GaAs ingots and low-grade gallium that was refined in the United States and wafers. Neo’s facility in Blanding, UT, had the capability to shipped to other countries. Data on refined gallium exports, produce about 50 metric tons per year of high-grade gallium. however, were not available.