Molecular-Scale Electronics: from Concept to Function
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Coulomb Blockade Effects in a Topological Insulator Grown on a High-Tc Cuprate Superconductor
Coulomb Blockade Effects in a Topological Insulator Grown on a High-Tc Cuprate Superconductor Bryan Rachmilowitz1, He Zhao1, Zheng Ren1, Hong Li1, Konrad H. Thomas2, John Marangola1, Shang Gao1, John Schneeloch3, Ruidan Zhong3, Genda Gu3, Christian Flindt4 and Ilija Zeljkovic1. 1Department of Physics, Boston College, 140 Commonwealth Ave, Chestnut Hill, Massachusetts 02467 2Department of Theoretical Physics, University of Geneva, 1211 Geneva, Switzerland 3Brookhaven National Laboratory, Upton, New York 11973, USA 4Department of Applied Physics, Aalto University, 00076 Aalto, Finland Abstract The evidence for proximity-induced superconductivity in heterostructures of topological insulators and high-Tc cuprates has been intensely debated. We use molecular beam epitaxy to grow thin films of topological insulator Bi2Te3 on a cuprate Bi2Sr2CaCu2O8+x, and study the surface of Bi2Te3 using low- temperature scanning tunneling microscopy and spectroscopy. In few unit-cell thick Bi2Te3 films, we find a V-shaped gap-like feature at the Fermi energy in dI/dV spectra. By reducing the coverage of Bi2Te3 films to create nanoscale islands, we discover that this spectral feature dramatically evolves into a much larger hard gap, which can be understood as a Coulomb blockade gap. This conclusion is supported by the evolution of dI/dV spectra with the lateral size of Bi2Te3 islands, as well as by topographic measurements that show an additional barrier separating Bi2Te3 and Bi2Sr2CaCu2O8+x. We conclude that the prominent gap-like feature in dI/dV spectra in Bi2Te3 films is not a proximity-induced superconducting gap. Instead, it can be explained by Coulomb blockade effects, which take into account additional resistive and capacitive coupling at the interface. -
Fundamentals of Nanoelectronics (Fone)
ESF EUROCORES Programme Fundamentals of NanoElectronics (FoNE) Highlights European Science Foundation (ESF) Physical and Engineering Sciences (PESC) The European Science Foundation (ESF) is an The Physical and Engineering Sciences are key drivers independent, non-governmental organisation, the for research and innovation, providing fundamental members of which are 78 national funding agencies, insights and creating new applications for mankind. research performing agencies, academies and learned The goal of the ESF Standing Committee for Physical societies from 30 countries. and Engineering Sciences (PESC) is to become the The strength of ESF lies in its influential membership pan-European platform for innovative research and and in its ability to bring together the different domains competitive new ideas while addressing societal of European science in order to meet the challenges of issues in a more effective and sustainable manner. the future. The Committee is a unique cross-disciplinary Since its establishment in 1974, ESF, which has its group, with networking activities comprising a good headquarters in Strasbourg with offices in Brussels mix of experimental and theoretical approaches. and Ostend, has assembled a host of organisations It distinguishes itself by focusing on fundamental that span all disciplines of science, to create a research and engineering. PESC covers the following common platform for cross-border cooperation in broad spectrum of fields: chemistry, mathematics, Europe. informatics and the computer sciences, physics, ESF is dedicated to promoting collaboration in fundamental engineering sciences and materials scientific research, funding of research and science sciences. policy across Europe. Through its activities and instruments ESF has made major contributions to science in a global context. -
A Brief History of Molecular Electronics
COMMENTARY | FOCUS A brief history of molecular electronics Mark Ratner The field of molecular electronics has been around for more than 40 years, but only recently have some fundamental problems been overcome. It is now time for researchers to move beyond simple descriptions of charge transport and explore the numerous intrinsic features of molecules. he concept of electrons moving conductivity decreased exponentially with Conference by one of the inventors of through single molecules comes layer thickness, therefore revealing electron the STM how to account for the fact Tin two different guises. The first is tunnelling through the organic monolayer. that charge could actually move through electron transfer, which involves a charge In 1974, Arieh Aviram and I published fatty acids containing long, saturated moving from one end of the molecule to the first theoretical discussion of transport hydrocarbon chains. the other1. The second, which is closely through a single molecule8. On reflection The first significant work attempting related but quite distinct, is molecular now, there are some striking features about to measure single-molecule transport charge transport and involves current this work. First, we suggested a very ad came from Mark Reed’s group at Yale passing through a single molecule that is hoc scheme for the actual calculation. University, working in collaboration with strung between electrodes2,3. The two are (This was in fact the beginning of many James Tour’s group, then at the University related because they both attempt -
Engineered Carbon Nanotubes and Graphene for Nanoelectronics And
Engineered Carbon Nanotubes and Graphene for Nanoelectronics and Nanomechanics E. H. Yang Stevens Institute of Technology, Castle Point on Hudson, Hoboken, NJ, USA, 07030 ABSTRACT We are exploring nanoelectronic engineering areas based on low dimensional materials, including carbon nanotubes and graphene. Our primary research focus is investigating carbon nanotube and graphene architectures for field emission applications, energy harvesting and sensing. In a second effort, we are developing a high-throughput desktop nanolithography process. Lastly, we are studying nanomechanical actuators and associated nanoscale measurement techniques for re-configurable arrayed nanostructures with applications in antennas, remote detectors, and biomedical nanorobots. The devices we fabricate, assemble, manipulate, and characterize potentially have a wide range of applications including those that emerge as sensors, detectors, system-on-a-chip, system-in-a-package, programmable logic controls, energy storage systems, and all-electronic systems. INTRODUCTION A key attribute of modern warfare is the use of advanced electronics and information technologies. The ability to process, analyze, distribute and act upon information from sensors and other data at very high- speeds has given the US military unparalleled technological superiority and agility in the battlefield. While recent advances in materials and processing methods have led to the development of faster processors and high-speed devices, it is anticipated that future technological breakthroughs in these areas will increasingly be driven by advances in nanoelectronics. A vital enabler in generating significant improvements in nanoelectronics is graphene, a recently discovered nanoelectronic material. The outstanding electrical properties of both carbon nanotubes (CNTs) [1] and graphene [2] make them exceptional candidates for the development of novel electronic devices. -
Yuyang Research
Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Scanned by CamScanner Parasitic Capacitance Definition In electrical circuits, parasitic capacitance, is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. All actual circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of 'ideal' circuit elements. Additionally, there is always non-zero capacitance between any two conductors; this can be significant at higher frequencies with closely spaced conductors, such as wires or printed circuit board traces. The parasitic capacitance between the turns of an inductor or other wound component is often described as self-capacitance. However, self-capacitance of a conductive object is a different phenomenon, referring to the capacitance of the object without reference to another object. Mechanism When two conductors at different potentials are close to one another, they are affected by each other's electric field and store opposite electric charges like a capacitor. Changing the potential v between the conductors requires a current i into or out of the conductors to charge or discharge them. where C is the capacitance between the conductors. For example, an inductor often acts as though it includes a parallel capacitor, because of its closely spaced windings. When a potential difference exists across the coil, wires lying adjacent to each other are at different potentials. -
Designing a Nanoelectronic Circuit to Control a Millimeter-Scale Walking Robot
Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 McLean, Virginia Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 MITRE Nanosystems Group e-mail: [email protected] WWW: http://www.mitre.org/tech/nanotech Sponsor MITRE MSR Program Project No. 51MSR89G Dept. W809 Approved for public release; distribution unlimited. Copyright © 2004 by The MITRE Corporation. All rights reserved. Gates, Alexander Abstract A novel nanoelectronic digital logic circuit was designed to control a millimeter-scale walking robot using a nanowire circuit architecture. This nanoelectronic circuit has a number of benefits, including extremely small size and relatively low power consumption. These make it ideal for controlling microelectromechnical systems (MEMS), such as a millirobot. Simulations were performed using a SPICE circuit simulator, and unique device models were constructed in this research to assess the function and integrity of the nanoelectronic circuit’s output. It was determined that the output signals predicted for the nanocircuit by these simulations meet the requirements of the design, although there was a minor signal stability issue. A proposal is made to ameliorate this potential problem. Based on this proposal and the results of the simulations, the nanoelectronic circuit designed in this research could be used to begin to address the broader issue of further miniaturizing circuit-micromachine systems. i Gates, Alexander I. Introduction The purpose of this paper is to describe the novel nanoelectronic digital logic circuit shown in Figure 1, which has been designed by this author to control a millimeter-scale walking robot. -
Prospects of Observing Ionic Coulomb Blockade in Artificial Ion
entropy Perspective Prospects of Observing Ionic Coulomb Blockade in Artificial Ion Confinements Andrey Chernev, Sanjin Marion and Aleksandra Radenovic * Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering, EPFL, 1015 Lausanne, Switzerland; andrey.chernev@epfl.ch (A.C.); sanjin.marion@epfl.ch (S.M.) * Correspondence: aleksandra.radenovic@epfl.ch Received: 9 November 2020; Accepted: 11 December 2020; Published: 18 December 2020 Abstract: Nanofluidics encompasses a wide range of advanced approaches to study charge and mass transport at the nanoscale. Modern technologies allow us to develop and improve artificial nanofluidic platforms that confine ions in a way similar to single-ion channels in living cells. Therefore, nanofluidic platforms show great potential to act as a test field for theoretical models. This review aims to highlight ionic Coulomb blockade (ICB)—an effect that is proposed to be the key player of ion channel selectivity, which is based upon electrostatic exclusion limiting ion transport. Thus, in this perspective, we focus on the most promising approaches that have been reported on the subject. We consider ion confinements of various dimensionalities and highlight the most recent advancements in the field. Furthermore, we concentrate on the most critical obstacles associated with these studies and suggest possible solutions to advance the field further. Keywords: nanofluidics; ionic Coulomb blockade; 2D materials; nanopores; nanotubes; angstrom slits 1. Introduction In the past fifteen years, various artificial nanofluidic platforms have become highly compelling for fundamental studies of physical phenomena and numerous practical applications where the transport of the confined ions plays a crucial role [1,2]. Among the most exciting practical applications are power generation [3–7], filtration, and molecular separation [8–10]. -
Advanced MOSFET Structures and Processes for Sub-7 Nm CMOS Technologies
Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Laura Waller Professor Costas J. Spanos Professor Junqiao Wu Spring 2016 © Copyright 2016 Peng Zheng All rights reserved Abstract Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies by Peng Zheng Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair The remarkable proliferation of information and communication technology (ICT) – which has had dramatic economic and social impact in our society – has been enabled by the steady advancement of integrated circuit (IC) technology following Moore’s Law, which states that the number of components (transistors) on an IC “chip” doubles every two years. Increasing the number of transistors on a chip provides for lower manufacturing cost per component and improved system performance. The virtuous cycle of IC technology advancement (higher transistor density lower cost / better performance semiconductor market growth technology advancement higher transistor density etc.) has been sustained for 50 years. Semiconductor industry experts predict that the pace of increasing transistor density will slow down dramatically in the sub-20 nm (minimum half-pitch) regime. Innovations in transistor design and fabrication processes are needed to address this issue. The FinFET structure has been widely adopted at the 14/16 nm generation of CMOS technology. -
FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION
FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION by Nurdan Demirci Sankır Dissertation submitted to the Faculty of Virginia Polytechnic Institute and State University In partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Materials Science and Engineering APPROVED: Richard O. Claus, Chairman Sean Corcoran Guo-Quan Lu Daniel Stilwell Dwight Viehland December 7, 2005 Blacksburg, Virginia Keywords: flexible electronics, organic electronics, organic semiconductors, electrical conductivity, line patterning, inkjet printing, field effect transistor. Copyright 2005, Nurdan Demirci Sankır FLEXIBLE ELECTRONICS: MATERIALS and DEVICE FABRICATION by Nurdan Demirci Sankır ABSTRACT This dissertation will outline solution processable materials and fabrication techniques to manufacture flexible electronic devices from them. Conductive ink formulations and inkjet printing of gold and silver on plastic substrates were examined. Line patterning and mask printing methods were also investigated as a means of selective metal deposition on various flexible substrate materials. These solution-based manufacturing methods provided deposition of silver, gold and copper with a controlled spatial resolution and a very high electrical conductivity. All of these procedures not only reduce fabrication cost but also eliminate the time-consuming production steps to make basic electronic circuit components. Solution processable semiconductor materials and their composite films were also studied in this research. Electrically conductive, ductile, thermally and mechanically stable composite films of polyaniline and sulfonated poly (arylene ether sulfone) were introduced. A simple chemical route was followed to prepare composite films. The electrical conductivity of the films was controlled by changing the weight percent of conductive filler. Temperature dependent DC conductivity studies showed that the Mott three dimensional hopping mechanism can be used to explain the conduction mechanism in composite films. -
Molecular and Nano Electronics/Molecular Electronics
NANOSCIENCES AND NANOTECHNOLOGIES - Molecular And Nano-Electronics - Weiping Wu, Yunqi Liu, Daoben Zhu MOLECULAR AND NANO-ELECTRONICS Weiping Wu, Yunqi Liu, Daoben Zhu Institute of Chemistry, Chinese Academy of Sciences, China Keywords: nano-electronics, nanofabrication, molecular electronics, molecular conductive wires, molecular switches, molecular rectifier, molecular memories, molecular transistors and circuits, molecular logic and molecular computers, bioelectronics. Contents 1. Introduction 2. Molecular and nano-electronics in general 2.1. The Electrodes 2.2. The Molecules and Nano-Structures as Active Components 2.3. The Molecule–Electrode Interface 3. Approaches to nano-electronics 3.1. Nanofabrication 3.2. Nanomaterial Electronics 3.3. Molecular Electronics 4. Molecular and Nano-devices 4.1. Definition, Development and Challenge of Molecular Devices 4.2. Molecular Conductive Wires 4.3. Molecular Switches 4.4. Molecular Rectifiers 4.5. Molecular Memories 4.6. Molecular Transistors and Circuits 4.7. Molecular Logic and Molecular Computers 4.8. Nano-Structures in Nano-Electronics 4.9. Other Applications, Such as Energy Production and Medical Diagnostics 4.10. Molecularly-Resolved Bioelectronics 5. Summary and perspective Glossary BibliographyUNESCO – EOLSS Biographical Sketches Summary SAMPLE CHAPTERS Molecular and nano-electronics using single molecules or nano-structures as active components are promising technological concepts with fast growing interest. It is the science and technology related to the understanding, design, and -
Nanoelectronics
Highlights from the Nanoelectronics for 2020 and Beyond (Nanoelectronics) NSI April 2017 The semiconductor industry will continue to be a significant driver in the modern global economy as society becomes increasingly dependent on mobile devices, the Internet of Things (IoT) emerges, massive quantities of data generated need to be stored and analyzed, and high-performance computing develops to support vital national interests in science, medicine, engineering, technology, and industry. These applications will be enabled, in part, with ever-increasing miniaturization of semiconductor-based information processing and memory devices. Continuing to shrink device dimensions is important in order to further improve chip and system performance and reduce manufacturing cost per bit. As the physical length scales of devices approach atomic dimensions, continued miniaturization is limited by the fundamental physics of current approaches. Innovation in nanoelectronics will carry complementary metal-oxide semiconductor (CMOS) technology to its physical limits and provide new methods and architectures to store and manipulate information into the future. The Nanoelectronics Nanotechnology Signature Initiative (NSI) was launched in July 2010 to accelerate the discovery and use of novel nanoscale fabrication processes and innovative concepts to produce revolutionary materials, devices, systems, and architectures to advance the field of nanoelectronics. The Nanoelectronics NSI white paper1 describes five thrust areas that focus the efforts of the six participating agencies2 on cooperative, interdependent R&D: 1. Exploring new or alternative state variables for computing. 2. Merging nanophotonics with nanoelectronics. 3. Exploring carbon-based nanoelectronics. 4. Exploiting nanoscale processes and phenomena for quantum information science. 5. Expanding the national nanoelectronics research and manufacturing infrastructure network. -
Outline MOS Gate Dielectrics Incorporation of N Or F at the Si/Sio
MOS Gate Dielectrics Outline •Scaling issues •Technology •Reliability of SiO2 •Nitrided SiO2 •High k dielectrics araswat tanford University 42 EE311 / Gate Dielectric Incorporation of N or F at the Si/SiO2 Interface Incorporating nitrogen or fluorine instead of hydrogen strengthens the Si/SiO2 interface and increases the gate dielectric lifetime because Si-F and Si-N bonds are stronger than Si-H bonds. Nitroxides – Nitridation of SiO2 by NH3 , N2O, NO Poly-Si Gate – Growth in N2O – Improvement in reliability – Barrier to dopant penetration from poly-Si gate Oxide N or F – Marginal increase in K – Used extensively Si substrate Fluorination – Fluorination of SiO2 by F ion implantation – Improvement in reliability – Increases B penetration from P+ poly-Si gate – Reduces K – Not used intentionally – Can occur during processing (WF6 , BF2) araswat tanford University 43 EE311 / Gate Dielectric 1 Nitridation of SiO2 in NH3 H • Oxidation in O2 to grow SiO2. • RTP anneal in NH3 maximize N at the interface and minimize bulk incorporation. • Reoxidation in O2 remove excess nitrogen from the outer surface • Anneal in Ar remove excess hydrogen from the bulk • Process too complex araswat tanford University 44 EE311 / Gate Dielectric Nitridation in N2O or NO Profile of N in SiO2 Stress-time dependence of gm degradation of a NMOS SiO2 Ref. Bhat et.al IEEE IEDM 1994 (Ref: Ahn, et.al., IEEE Electron Dev. Lett. Feb. 1992) •The problem of H can be circumvented by replacing NH3 by N2O or NO araswat tanford University 45 EE311 / Gate Dielectric 2 Oxidation of Si in N2O N2O → N2 + O N2O + O → 2NO Ref: Okada, et.al., Appl.