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Single-Event Effects of Space and Atmospheric Radiation on Memory Components

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Single-Event Effects of Space and Atmospheric Radiation on Memory Components DEPARTMENT OF PHYSICS, UNIVERSITY OF JYVÄSKYLÄ LIRMM, UNIVERSITY OF MONTPELLIER/CNRS RESEARCH REPORT No. 10/2017 SINGLE-EVENT EFFECTS OF SPACE AND ATMOSPHERIC RADIATION ON MEMORY COMPONENTS by Alexandre Louis BOSSER Academic Dissertation for the Degree of Doctor of Philosophy To be presented, by permission of the Faculty of Mathematics and Science of the University of Jyväskylä and the President of the University of Montpellier, for public examination in Auditorium FYS 1 of the University of Jyväskylä on December 20th, 2017 at 12 noon. Jyväskylä, Finland 2017 2 Author Alexandre Louis Bosser Department of Physics, University of Jyväskylä Jyväskylä, Finland LIRMM, University of Montpellier/CNRS Montpellier, France email: [email protected] Supervisors Professor Ari Virtanen Department of Physics, University of Jyväskylä Jyväskylä, Finland Assistant Professor Arto Javanainen Department of Physics, University of Jyväskylä Jyväskylä, Finland School of Engineering, Vanderbilt University Nashville, TN, USA Professor Luigi Dilillo LIRMM, University of Montpellier/CNRS Montpellier, France Reviewers Professor Ronald Schrimpf Institute for Space and Defense Electronics, Vanderbilt University Nashville, TN, USA Professor Simone Gerardin Department of Information Engineering, University of Padova Padova, Italy Opponent Professor Fernanda Lima Kastensmidt Institute of Informatics, Federal University of Rio Grande do Sul Porto Alegre, Brazil 3 Abstract Electronic memories are ubiquitous components in electronic systems: they are used to store data, and can be found in all manner of industrial, automotive, aerospace, telecommunication and entertainment systems. Memory technology has seen a constant evolution since the first practical dynamic Random- Access Memories (dynamic RAMs) were created in the late 60's. The demand for ever-increasing performance and capacity and decrease in power consumption was met thanks to a steady miniaturization of the component features: modern memory devices include elements barely a few tens of atomic layers thick and a few hundred of atomic layers wide. The side effect of this constant miniaturization was an increase in the sensitivity of these devices to radiation. Since the first radiation-induced single-event effects (SEEs) were identified in satellites in the late 70’s [1] and particle-induced memory upsets were replicated in laboratory tests [2], radiation hardness has been a concern for computer memory manufacturers and for systems designers as well. In the early days, the need for data storage in radiation-rich environments, e.g. nuclear facilities, particle accelerators and space, primarily for military use, created a market for radiation-hardened memory components, capable of withstanding the effects of radiation ; however, this market dwindled with the end of the Cold War and the loss of government interest [3]. In a matter of years, the shortage of available radiation-hard components led system designers to turn to so-called Commercial Off-The-Shelf (COTS) components, with the added benefit of higher performance at a lower cost. Since COTS devices are not designed with radiation hardness in mind, each COTS component must be assessed before it can be included in a system where reliability is important – a process known as Radiation Hardness Assurance (RHA) [4]. This has led to the emergence of radiation testing as a standard practice in the industry (and in the space industry in particular). Irradiation tests with particle accelerators and radioactive sources are performed to estimate a component’s radiation-induced failure rate in a given radiation environment, and thus its suitability for a given mission. The present work focuses on SEE testing of memory components. It presents the requirements, difficulties and shortcomings of radiation testing, and proposes methods for radiation test data processing; the detection and study of failure modes is used to gain insight on the tested components. This study is based on data obtained over four years on several irradiation campaigns, where memory devices of different technologies (static RAMs, ferroelectric RAM, magnetoresistive RAM, and flash) were irradiated with proton, heavy-ion, neutron and muon beams. The yielded data also supported the development of MTCube, a CubeSat picosatellite developed jointly by the Centre Spatial Universitaire (CSU) and LIRMM in Montpellier, whose mission is to carry out in-flight testing on the same memory devices. The underlying concepts regarding radiation, radiation environments, radiation-matter interactions, memory component architecture and radiation testing are introduced in the first chapters. 4 Résumé Les composants mémoires sont omniprésents en électronique : ils sont utilisés pour stocker des données, et sont présents dans tous les champs d’application - industriel, automobile, aérospatial, grand public et télécommunications, entre autres. Les technologies mémoires ont connu une évolution continue depuis la création de la première mémoire vive statique (Static Random-Access Memory, SRAM) à la fin des années 60. Les besoins toujours plus importants en termes de performance, de capacité et d’économie d’énergie poussent à une miniaturisation constante de ces composants : les mémoires modernes contiennent des circuits dont certaines dimensions sont de l’ordre du nanomètre. L’un des inconvénients de cette miniaturisation fut un accroissement de la sensibilité de ces composants aux radiations. Depuis la détection des premiers effets singuliers (Single-Event Effects, SEE) sur un satellite à la fin des années 70 [1], et la reproduction du phénomène en laboratoire [2], les fabricants de composants mémoires et les ingénieurs en électronique se sont intéressés au durcissement aux radiations. Au début, les besoins en stockage pour applications civiles et militaires – comme le développement d’accélérateurs de particules, de réacteurs nucléaires et d’engins spatiaux – créèrent un marché pour les composants durcis aux radiations ; cependant, ce marché s’est considérablement réduit avec la fin de la Guerre Froide et la perte d’intérêt des gouvernements [3]. En quelques années, les ingénieurs durent se tourner vers des composants commerciaux (Commercial Off-The-Shelf Components, COTS), ce qui permit au passage des gains en performance et une réduction des coûts. Les composants COTS n’étant pas conçus pour résister aux radiations, chaque composant doit être évalué avant d’être utilisé dans des systèmes dont la fiabilité est critique. Ce processus d’évaluation est appelé Radiation Hardness Assurance (RHA) [4]. Les tests aux radiations des composants commerciaux sont devenus une pratique standardisée (en particulier dans l’industrie aérospatiale). Ces composants sont irradiés à l’aide d’accélérateurs de particules et de sources radioactives, afin d’évaluer leur sensibilité, de prédire leur taux d’erreur dans un environnement radiatif donné, et ainsi de déterminer leur adéquation pour une mission donnée. Cette étude porte sur le test de composants mémoires aux effets singuliers. Les objectifs, difficultés et limitations des tests aux radiations sont présentés, et des méthodes d’analyse de données sont proposées ; l’identification et l’étude des modes de défaillance sont utilisées pour approfondir les connaissances sur les composants testés. Cette étude est basée sur de nombreuses campagnes de test aux radiations, effectuées sur une période de quatre ans, pendant lesquelles des mémoires de différentes technologies – mémoires vives statiques (SRAM), ferroélectriques (FRAM), magnétorésistives (MRAM) et mémoires flash – furent irradiées avec des faisceaux de muons, neutrons, protons et ions lourds. Les données générées ont également servi au développement d’un CubeSat développé conjointement par le LIRMM et le Centre Spatial Universitaire de Montpellier, MTCube, dont la mission est l’irradiation de ces mêmes composants en milieu spatial. Les concepts sous-jacents liés aux radiations, aux environnements radiatifs, à l’architecture des composants mémoires et aux tests aux radiations sont introduits dans les premiers chapitres. 5 List of peer-reviewed publications This doctoral thesis is based in part on the following peer-reviewed publications: A. L. Bosser, V. Gupta, A. Javanainen, G. Tsiligiannis, S. D. LaLumondiere, D. Brewe, V. Ferlet-Cavrois, H. Puchner, H. Kettunen, T. Gil, F. Wrobel, F. Saigné, A. Virtanen and L. Dilillo, “Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory” (presented at RADECS 2017, submitted for publication in IEEE Transactions on Nuclear Science) Contribution: the author had a major role in the experiment’s software and hardware development, took part in the test campaigns, and did most of the data processing and writing. A. Bosser, V. Gupta, G. Tsiligiannis, A. Javanainen, H. Kettunen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel and L. Dilillo, “Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs”, in IEEE Transactions on Nuclear Science, Vol. 62, no. 6, pp.2620-2626, 2015. Contribution: the author had a major role in the experiment’s software and hardware development, took part in the test campaigns, and did most of the data processing and writing. A. L. Bosser, V. Gupta, G. Tsiligiannis, C. Frost, A. Zadeh, J. Jaatinen, A. Javanainen, H. Puchner, F. Saigné, A. Virtanen, F. Wrobel, and L. Dilillo, “Methodologies for the Statistical Analysis of Memory Response to Radiation”, in IEEE Transactions on Nuclear Science,
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