The Klystron: a Microwave Source of Surprising Range and Endurance*
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Review of Power Sources
RF Power Generation With Klystrons amongst other things Dr. C Lingwood Includes slides by Professor R.G. Carter and A Dexter Engineering Department, Lancaster University, U.K. and The Cockcroft Institute of Accelerator Science and Technology • Basic Klystron Principals • Existing technology • Underrating • Modulation anodes • Other options – IOTS – Magnetrons June 2011 ESS Workshop June 2 IOT June 2011 ESS Workshop June 3 IOT Output gap June 2011 ESS Workshop June 4 Velocity modulation • An un-modulated electron beam passes through a cavity resonator with RF input • Electrons accelerated or retarded according to the phase of the gap voltage: Beam is velocity modulated: • As the beam drifts downstream bunches of electrons are formed as shown in the Applegate diagram • An output cavity placed downstream extracts RF power just as in an IOT • This is a simple 2-cavity klystron • Conduction angle = 180° (Class B) June 2010 CAS RF for Accelerators, Ebeltoft 5 Multi-cavity klystron • Additional cavities are used to increase gain, efficiency and bandwith • Bunches are formed by the first (N-1) cavities • Power is extracted by the Nth cavity • Electron gun is a space- charge limited diode with perveance given by I0 K 3 2 V0 • K × 106 is typically 0.5 - 2.0 • Beam is confined by an axial magnetic field Photo courtesy of Thales Electron Devices June 2010 CAS RF for Accelerators, Ebeltoft 6 Efficiency and Perveance • Second harmonic cavity used to increase bunching • Maximum possible efficiency with second harmonic cavity is approximately 6 e 0.85 -
Comparative Overview of Inductive Output Tubes
! ESS AD Technical Note ! ESS/AD/0033 ! ! ! ! ! ! !!!!!!!!!! ! !!!Accelerator Division ! ! ! ! ! ! ! ! ! ! Comparative Overview of Inductive Output Tubes Rihua Zeng, Anders J. Johansson, Karin Rathsman and Stephen Molloy Influence of the Droop and Ripple of Modulator onRebecca Klystron SeviourOutput June 2011 23 February 2012 I. Introduction An IOT is a beam driven vacuum electronic RF amplifier. This document represents a comparative overview of the Inductive Output Tube (IOT). Starting with an overview of the IOT, we progress to a comparative discussion of the IOT relative to other RF amplifiers, discussing the advantages and limitations within the frame work of the RF amplifier requirements for the ESS. A discussion on the current state of the art in IOTs is presented along with the status of research programmes to develop 352MHz and 704MHz IOT’s. II. Background The Inductive Output Tube (IOT) RF amplifier was first proposed by Haeff in 1938, but not really developed into a working technology until the 1980s. Although primarily developed for the television transmitters, IOTs have been, and currently are, used on a number of international high- powered particle accelerators, such as; Diamond, LANSCE, and CERN. This has created a precedence and expertise in their use for accelerator applications. IOTs are a modified form of conventional coaxial gridded tubes, similar to the tetrode, although modified towards a linear beam structure device, similar to a Klystron. This hybrid construct is sometimes described as a cross between a klystron and a triode, hence Eimacs trade name for IOTs, the Klystrode. A schematic of an IOT, taken from [1], is shown in Figure 1. -
Solid State Modulators – Efficiency Considerations Focussing on Sic Devices –
Eidgenössische Technische Hochschule Zürich Laboratory for High Swiss Federal Institute of Technology Zurich Power Electronic Systems Solid State Modulators – Efficiency Considerations focussing on SiC Devices – J. Biela, S. Stathis, M. Jaritz, and S. Blume www.hpe.ee.ethz.ch / [email protected] Typical Topology of Solid State Pulse Modulator Systems AC/DC rectifier unit DC/DC converter for charging C-bank / voltage adaption Pulse generation unit Load e.g. klystron Constant Power Pulsed Power AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage ⎧⎪⎪⎪⎨⎪⎪⎪⎩ Sometimes integrated V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 2 33 Electronic Systems Typical Topology of Solid State Pulse Modulator Systems Grounded klystron load I Isolation with 50Hz transformer or I Isolated DC-DC converter Typical Isolation AC DC Energy Storage Pulse Klystron Modulator Load DC DC Grid Medium Voltage V V V V t Pulse t t t Pulse 400V or MV Intermediate Buffer Capacitor Bank Pulse Voltage High Power 3 33 Electronic Systems 29 MW(35MW)/140 µs Modulator for CLIC – System Efficiency – High Power Electronic Systems CLIC System Specifications Output voltage 150:::180 kV Settling time <8 µs Output power (pulsed) 29 MW (- 35 MW) Repetition rate 50 Hz Flat-top length 140 µs Average output power 203 kW (- 245 kW) Flat-top stability (FTS) <0.85 % Pulse to pulse repeatab. <100 ppm Rise time <3 µs 819 klystrons 819 klystrons 15 MW, 142 µs circumferences 15 MW, 142 µs delay loop 73 m drive beam -
Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
Application Note GaN or GaAs, TWT or Klystron - Testing High Power Amplifiers for RADAR Signals using Peak Power Meters Vitali Penso Applications Engineer, Boonton Electronics Abstract Measuring and characterizing pulsed RF signals used in radar applications present unique challenges. Unlike communication signals, pulsed radar signals are “on” for a short time followed by a long “off” period, during “on” time the system transmits anywhere from kilowatts to megawatts of power. The high power pulsing can stress the power amplifier (PA) in a number of ways both during the on/off transitions and during prolonged “on” periods. As new PA device technologies are introduced, latest one being GaN, the behavior of the amplifier needs to be thoroughly tested and evaluated. Given the time domain nature of the pulsed RF signal, the best way to observe the performance of the amplifier is through time domain signal analysis. This article explains why the peak power meter is a must have test instrument for characterizing the behavior of pulsed RF power amplifiers (PA) used in radar systems. Radar Power Amplifier Technology Overview Peak Power Meter for Pulsed RADAR Measurements Before we look at the peak power meter and its capabilities, let’s The most critical analysis of the pulsed RF signal takes place in the look at different technologies used in high power amplifiers (HPA) time domain. Since peak power meters measure, analyze and dis- for RADAR systems, particularly GaN on SiC, and why it has grabbed play the power envelope of a RF signal in the time domain, they the attention over the past decade. -
Arecibo 430 Mhz Radar System
file: 430txman 12-98 draft Aug. 31, 2005 Arecibo 430 MHz Radar System Operation and Maintenance Manual Written by Jon Hagen April 2001, 2nd ed. May 2005 1 NOTE With its high-voltage and high-power, and high places, this transmitter is potentially lethal. Proper precautions must be taken to avoid electrical shock, RF exposure, and X-ray exposure. (See Section 22). Emergency Procedure: ELECTRIC SHOCK Neutralize power 1. De-energize the circuit by means of switch or circuit breaker or cut the line by an insulated cutter. 2. Safely remove the victim from contact with the energy source by using dry wood stick, plastic rope, leather belt, blanket or any other non-conductive materials. Call for help 1. Others can help you administer first aid 2. Others can call professional medical help and/or arrange transfer facilities Cardio Pulmonary Resuscitation (CPR) 1. Check victim's ABC A - airway: Clear and open airway by head tilt - chin lift maneuver B - breathing: Check and restore breathing by rescue breathing C- circulation: Check and restore circulation by external chest compression 2. If pulse is present, but not breathing, maintain one rescue breathing (mouth to mouth resuscitation) as long as necessary. 3. If pulse and breathing are absent, give external chest compressions (CPR). 4. If pulse and breathing are present, stop CPR, stabilize the victim. 5. Caution: Only properly trained personnel should administer CPR to avoid further harm to 2 the victim. Administer first aid for shock 1. Keep the victim lying down, warm and comfortable to maintain body heat until medical assistance arrive. -
Economic Research Working Paper No. 27
Economic Research Working Paper No. 27 Breakthrough technologies – Semiconductor, innovation and intellectual property Thomas Hoeren Francesca Guadagno Sacha Wunsch-Vincent Economics & Statistics Series November 2015 Breakthrough Technologies – Semiconductors, Innovation and Intellectual Property Thomas Hoeren*, Francesca Guadagno**, Sacha Wunsch-Vincent** Abstract Semiconductor technology is at the origin of today’s digital economy. Its contribution to innova- tion, productivity and economic growth in the past four decades has been extensive. This paper analyzes how this breakthrough technology came about, how it diffused, and what role intellec- tual property (IP) played historically. The paper finds that the semiconductor innovation ecosys- tem evolved considerably over time, reflecting in particular the move from early-stage invention and first commercialization to mass production and diffusion. All phases relied heavily on con- tributions in fundamental science, linkages to public research and individual entrepreneurship. Government policy, in the form of demand-side and industrial policies were key. In terms of IP, patents were used intensively. However, they were often used as an effective means of sharing technology, rather than merely as a tool to block competitors. Antitrust policy helped spur key patent holders to set up liberal licensing policies. In contrast, and potentially as a cautionary tale for the future, the creation of new IP forms – the sui generis system to protect mask design - did not produce the desired outcome. Finally, copyright has gained in importance more re- cently. Keywords: semiconductors, innovation, patent, sui generis, copyright, intellectual property JEL Classification: O330, O340, O470, O380 Disclaimer: The views expressed in this article are those of the authors and do not necessarily reflect the views of the World Intellectual Property Organization or its member states. -
Ampleon Company Presentation
Microwave Journal Educational Webinar Ampleon Brings RF Power Innovations towards Industrial Heating Market Gerrit Huisman Robin Wesson Klaus Werner Nov, 17, 2016 Amplify the future | 1 Ampleon at a Glance Our Company Our Businesses • European Company / Headquarters in • Building transistors and other RF Power products Nijmegen/Netherlands for over 50 years • 1,250 employees globally in 18 sites • Industry Leader for 35 years, addressing • Worldwide Sales, Application and R&D – Mobile Broadband – Broadcast • Own manufacturing facility – Aerospace & Defense • Partnering with leading external manufacturers – ISM – RF Energy Technologies & Products Customers • Broad LDMOSTaco and GaN technology portfolio Reinier Zwemstra Beltman • Comprehensive package line-up • Chief Operations Head of Sales OutstandingOfficer product consistency Amplify the future | 2 Ampleon and RF Energy • Recognized as thought leader • Co-founder of RF Energy Alliance • Working with the leaders in new application domains Amplify the future | 3 RF Power Industrial market dominated by vacuum tubes • Current solutions mainly based on ‘old’ vacuum tube principles • Somewhat fragmented market with large and many small vendors – TWT (Traveling Wave Tubes) – Klystron – Magnetrons – CFA (Crossed Field Amplifiers) – Gyrotrons Amplify the future | 4 2020 TAM VED’s about ~$1B $1.2B in 2014 TAM VEDS Source ABI research TWT 63% Klystron 17% Gyrotron 3% magnetron Cross Field 15% 2% Not included: domestic magnetrons, Aerospace market Amplify the future | 5 Solid state penetrates the -
Klystron Gun Arcing and Modulator Protection
SLAC-PUB-10435 KLYSTRON GUN ARCING AND MODULATOR PROTECTION S.L. Gold Stanford Linear Accelerator Center (SLAC), Menlo Park, CA USA Abstract The demand for 500 kV and 265 amperes peak to power an X-Band klystron brings up protection issues for klystron faults and the energy dumped into the arc from the modulator. This situation is made worse when more than one klystron will be driven from a single modulator, such as the existing schemes for running two and eight klystrons. High power pulsed klystrons have traditionally be powered by line type modulators which match the driving impedance with the load impedance and therefore current limit at twice the operating current. Multiple klystrons have the added problems of a lower modulator source impedance and added stray capacitance, which converts into appreciable energy at high voltages like 500kV. SLAC has measured the energy dumped into klystron arcs in a single and dual klystron configuration at the 400 to 450kV level and found interesting characteristics in the arc formation. The author will present measured data from klystron arcs powered from line-type modulators in several configurations. The questions arise as to how the newly designed solid-state modulators, running multiple tubes, will react to a klystron arc and how much energy will be dumped into the arc. 1. INTRODUCTION The amount of protection required for a gun arc or a defocused beam in a microwave tube is a continual source of controversy and debate. Historically, tube companies have set protection requirements by their own experience in test. Body current interception was thought to be limited to 10 joules maximum and shutdown within 10 microseconds. -
Design of Microwave Cavity Bandpass Filter from 25Ghz to 60Ghz
Ashna Shaiba. Int. Journal of Engineering Research and Application www.ijera.com ISSN: 2248-9622, Vol. 7, Issue 9, (Part -6) September 2017, pp.64-69 RESEARCH ARTICLE OPEN ACCESS Design of Microwave Cavity Bandpass Filter from 25GHz TO 60GHz *Ashna Shaiba1, Dr. Agya Mishra2 1Department of Electronics & Telecommunication Engineering, Jabalpur Engineering College , Jabalpur Madhya Pradesh, Pin- 482011 India 2Department of Electronics & Telecommunication Engineering, Jabalpur Engineering College , Jabalpur Madhya Pradesh, Pin- 482011 India Corresponding Author: Ashna Shaiba1 ABSTRACT This paper presents the design of microwave cavity band pass filter and analyzes the quality factor and insertion loss upto 60GHz .This paper discusses the performance of a cavity filter for different size of cavity at different frequencies upto 60GHz with calculation of quality factor and insertion loss. This type of microwave cavity filter will be useful in any microwave system wherein low insertion loss and high frequency selectivity are crucial, such as in base station, radar and broadcasting system. It is shown that the basis for much fundamental microwave filter theory lies in the realm of cavity filters, which indeed are actually used directly for many applications at microwave frequencies as high as 60 GHz. Many types of algorithm are discussed and compared with the object of pointing out the most useful references, especially for a researcher to the field. Keywords: Microwave cavity filters, band pass filter(BPF), quality factor, s-parameter, insertion loss, TE101 mode. ----------------------------------------------------------------------------------------------------------------------------- --------- Date of Submission: 05-09-2017 Date of acceptance: 21-09-2017 ----------------------------------------------------------------------------------------------------------------------------- --------- I. INTRODUCTION II. CONCEPTS OF MICROWAVE A filter is an electronic device used to select CAVITY FILTER a particular pass band range. -
High Performance, Continuously Tunable Microwave Filters Using MEMS Devices with Very Large, Controlled, Out-Of-Plane Actuation
1 High Performance, Continuously Tunable Microwave Filters using MEMS Devices with Very Large, Controlled, Out-of-Plane Actuation Jackson Chang, Michael Holyoak, George Kannell, Marc Beacken, Matthias Imboden and David J. Bishop with a filter, quadrature detector and analog-to-digital Abstract— Software defined radios (SDR) in the microwave X converters to digitize the detector I/Q outputs for subsequent and K bands offer the promise of low cost, programmable digital processing. The filter is needed because of the challenge operation with real-time frequency agility. However, the real of detecting nanowatt signals in the presence of powerful out of world in which such radios operate requires them to be able to band transmissions and the finite dynamic range of the SDR. In detect nanowatt signals in the vicinity of 100 kW transmitters. this paper we discuss using novel MEMS devices in a This imposes the need for selective RF filters on the front end of the receiver to block the large, out of band RF signals so that the capacitance-post loaded cavity filter geometry [6]. We believe finite dynamic range of the SDR is not overwhelmed and the such filters can meet the considerable challenges of being low desired nanowatt signals can be detected and digitally processed. This is currently typically done with a number of narrow band filters that are switched in and out under program control. What is needed is a small, fast, wide tuning range, high Q, low loss filter that can continuously tune over large regions of the microwave spectrum. In this paper we show how extreme throw MEMS actuators can be used to build such filters operating up to 15 GHz and beyond. -
Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper
Journal of Visualized Experiments www.jove.com Video Article Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper Mary Kombolias1, Jan Obrzut2, Michael T. Postek3,4, Dianne L. Poster2, Yaw S. Obeng3 1 Testing and Technical Services, Plant Operations, United States Government Publishing Office 2 Materials Measurement Laboratory, National Institute of Standards and Technology 3 Nanoscale Device Characterization Division, Physical Measurement Laboratory, National Institute of Standards and Technology 4 College of Pharmacy, University of South Florida Correspondence to: Mary Kombolias at [email protected], Yaw S. Obeng at [email protected] URL: https://www.jove.com/video/59991 DOI: doi:10.3791/59991 Keywords: Engineering, Issue 152, Resonant Cavity, dielectric spectroscopy, paper, fiber analysis, paper aging, recycled content Date Published: 10/4/2019 Citation: Kombolias, M., Obrzut, J., Postek, M.T., Poster, D.L., Obeng, Y.S. Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper. J. Vis. Exp. (152), e59991, doi:10.3791/59991 (2019). Abstract The current analytical techniques for characterizing printing and graphic arts substrates are largely ex situ and destructive. This limits the amount of data that can be obtained from an individual sample and renders it difficult to produce statistically relevant data for unique and rare materials. Resonant cavity dielectric spectroscopy is a non-destructive, contactless technique which can simultaneously -
A Dissertation Entitled Design of Microwave Front-End Narrowband
A Dissertation entitled Design of Microwave Front-End Narrowband Filter and Limiter Components by Lee W. Cross Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Engineering _________________________________________ Vijay Devabhaktuni, Ph.D., Committee Chair _________________________________________ Mansoor Alam, Ph.D., Committee Member _________________________________________ Mohammad Almalkawi, Ph.D., Committee Member _________________________________________ Matthew Franchetti, Ph.D., Committee Member _________________________________________ Daniel Georgiev, Ph.D., Committee Member _________________________________________ Telesphor Kamgaing, Ph.D., Committee Member _________________________________________ Roger King, Ph.D., Committee Member _________________________________________ Patricia Komuniecki, Ph.D., Dean College of Graduate Studies The University of Toledo May 2013 Copyright 2013, Lee Waid Cross This document is copyrighted material. Under copyright law, no parts of this document may be reproduced without the expressed permission of the author. An Abstract of Design of Microwave Front-End Narrowband Filter and Limiter Components by Lee W. Cross Submitted to the Graduate Faculty as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Engineering The University of Toledo May 2013 This dissertation proposes three novel bandpass filter structures to protect systems exposed to damaging levels of electromagnetic (EM) radiation from intentional