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(12) United States Patent (10) Patent No.: US 9,109,281 B2 Gatineau Et Al

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(12) United States Patent (10) Patent No.: US 9,109,281 B2 Gatineau Et Al US009 109281B2 (12) United States Patent (10) Patent No.: US 9,109,281 B2 Gatineau et al. (45) Date of Patent: Aug. 18, 2015 (54) METAL HETEROCYCLIC COMPOUNDS FOR (2013.01); COIG 25/02 (2013.01); C23C 16/34 DEPOSITION OF THIN FILMS (2013.01); C23C 16/405 (2013.01); Y10T I 17/10 (2015.01) (71) Applicant: L'Air Liquide, Société Anonyme pour (58) Field of Classification Search l'Etude et l'Exploitation des Procédés USPC .............................................. 117/104, 88,84 Georges Claude, Paris (FR) See application file for complete search history. (72) Inventors: Julien Gatineau, Tsuchiura (JP); (56) References Cited Kazutaka Yanagita, Tsukuba (JP); Shingo Okubo, Tsukuba (JP) U.S. PATENT DOCUMENTS (73) Assignee: L'Air Liquide, Sociétéw w Anonyme pour 4,141,7783,573,958 A 4,2f1979 1971 SmallDomrachev et al. l'Etude et l'Exploitation des Procédés Continued Georges Claude, Paris (FR) (Continued) (*) Notice: Subject to any disclaimer, the term of this FOREIGN PATENT DOCUMENTS patent is extended or adjusted under 35 DE 42 34998 4f1994 U.S.C. 154(b) by 0 days. EP O 125721 11, 1984 (21) Appl. No.: 14/147,168 (Continued) OTHER PUBLICATIONS (22) Filed: Jan. 3, 2014 Akkari, A. et al., “Three coordinate divalent Group 14 element com (65) Prior Publication Data pounds with a f-diketiminate as Supporting ligand LMX L=PhNC(Me)CHC(Me)NPh, X=C1, I: M=Ge. Sn”, Journal of US 2014/01 19977 A1 May 1, 2014 Organometallic Chemistry 622 (2001) pp. 190-198. (Continued) Related U.S. Application Data - - - Primary Examiner — James McDonough (62) Division of application No. 12/492,000, filed on Jun. (74) Attorney, Agent, or Firm — Patricia E. McQueeney 25, 2009, now Pat. No. 8,636,845. (60) Provisional application No. 61/075,664, filed on Jun. (57) ABSTRACT 25, 2008. Methods and compositions for depositing a metal containing film on a Substrate are disclosed. A reactor and at least one (51) Int. Cl. Substrate disposed in the reactor are provided. A metal con C30B 23/00 (2006.01) taining precursor is provided and introduced into the reactor, C30B 25/00 (2006.01) which is maintained at a temperature of at least 100° C. A (Continued) metal is deposited on to the Substrate through a deposition process to form a thin film on the substrate. (52) U.S. Cl. CPC ................ C23C 16/18 (2013.01); COIG 23/00 20 Claims, 1 Drawing Sheet R8 RC, 8. "gar (a) * (b) (c) F. R. R. R RRG s CRR -N- RR: v CRR 88: S R N M-N. 88: - r : (d RRC Cirk e & 3 R ". R RRC “R RG N. K RC., 33C in Y; 8. N (t) R (g) f (h) R R R&C f ch RRC -- Gr 83C r Rd RR: CRR (i) j} R {k} r R RRC - 8. R - N -N-CR RRC M RRC CR RRC - N RRC - N - C & R R US 9,109.281 B2 Page 2 (51) Int. Cl. FOREIGN PATENT DOCUMENTS C30B 28/2 (2006.01) EP O 568 074 11, 1993 C30B 28/4 (2006.01) EP 1 180 553 2, 2002 C23C I6/8 (2006.01) E. 2. 59. 58. COIG 23/00 (2006.01) EP 1464 725 10, 2004 COIG 25/02 (2006.01) EP 1806 427 7/2007 EP 1995 236 11, 2008 C23C I6/34 (2006.01) EP 2 130942 12/2009 C23C I6/40 (2006.01) JP H06 166691 6, 1994 JP 2006 124743 5, 2006 JP 2008 103731 5, 2008 (56) References Cited JP 2009 274949 11, 2009 WO WO 83 01.018 3, 1983 U.S. PATENT DOCUMENTS WO WO96 40448 12/1996 WO WO98 16667 4f1998 4,377,613 A 3, 1983 Gordon WO WOOO 2363.5 4/2000 4.419,386 A 12/1983 Gordon WO WOOO 29637 5, 2000 4,718,929 A 1, 1988 Power et al. 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