A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations
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Amorphous Silicon/Crystalline Silicon Heterojunctions for Nuclear Radiation Detector Applications
LBNL-39508 UC-406 ERNEST DRLANDD LAWRENCE BERKELEY NATIDNAL LABDRATDRY Amorphous Silicon/Crystalline Silicon Heterojunctions for Nuclear Radiation Detector Applications MAR 2 5 897 J.T. Walton, W.S. Hong, P.N. Luke, N. W. Wang, and F.P. Ziemba O STI Engineering Division October 1996 Presented at the 1996IEEENuclear Science Symposium, r Los Angeles, CA, November 12-15,1996, and to be published in the Proceedings DISCLAIMER This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by its trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or The Regents of the University of California. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof, or The Regents of the University of California. Ernest Orlando Lawrence Berkeley National Laboratory is an equal opportunity employer. LBNL-39508 UC-406 Amorphous Silicon/Crystalline Silicon Heterojunctions for Nuclear Radiation Detector Applications J.T. Walton, W.S. Hong, P.N. -
IEEE Spectrum Gaas
Proof #4 COLOR 8/5/08 @ 5:15 pm BP BEYOND SILICON’S ELEMENTAL LOGICIN THE QUEST FOR SPEED, KEY PARTS OF MICRO- PROCESSORS MAY SOON BE MADE OF GALLIUM ARSENIDE OR OTHER “III-V” SEMICONDUCTORS BY PEIDE D. YE he first general-purpose lithography, billions of them are routinely microprocessor, the Intel 8080, constructed en masse on the surface of a sili- released in 1974, could execute con wafer. about half a million instructions As these transistors got smaller over the T per second. At the time, that years, more could fit on a chip without rais- seemed pretty zippy. ing its overall cost. They also gained the abil- Today the 8080’s most advanced descen- ity to turn on and off at increasingly rapid dant operates 100 000 times as fast. This phe- rates, allowing microprocessors to hum along nomenal progress is a direct result of the semi- at ever-higher speeds. ALL CHRISTIEARTWORK: BRYAN DESIGN conductor industry’s ability to reduce the size But shrinking MOSFETs much beyond their of a microprocessor’s fundamental building current size—a few tens of nanometers—will be blocks—its many metal-oxide-semiconductor a herculean challenge. Indeed, at some point in field-effect transistors (MOSFETs), which act the next several years, it may become impossi- as tiny switches. Through the magic of photo- ble to make them more minuscule, for reasons WWW.SPECTRUM.IEEE.ORG SEPTEMBER 2008 • IEEE SPECTRUM • INT 39 TOMIC-LAYER DEPOSITION provides one means for coating a semiconductor wafer with a high-k aluminum oxide insulator. The Abenefit of this technique is that it offers atomic-scale control of the coating thickness without requiring elaborate equipment. -
Thin-Film Silicon Solar Cells
SOLAR CELLS Chapter 7. Thin-Film Silicon Solar Cells Chapter 7. THIN-FILM SILICON SOLAR CELLS 7.1 Introduction The simplest semiconductor junction that is used in solar cells for separating photo- generated charge carriers is the p-n junction, an interface between the p-type region and n- type region of one semiconductor. Therefore, the basic semiconductor property of a material, the possibility to vary its conductivity by doping, has to be demonstrated first before the material can be considered as a suitable candidate for solar cells. This was the case for amorphous silicon. The first amorphous silicon layers were reported in 1965 as films of "silicon from silane" deposited in a radio frequency glow discharge1. Nevertheless, it took more ten years until Spear and LeComber, scientists from Dundee University, demonstrated that amorphous silicon had semiconducting properties by showing that amorphous silicon could be doped n- type and p-type by adding phosphine or diborane to the glow discharge gas mixture, respectively2. This was a far-reaching discovery since until that time it had been generally thought that amorphous silicon could not be doped. At that time it was not recognised immediately that hydrogen played an important role in the newly made amorphous silicon doped films. In fact, amorphous silicon suitable for electronic applications, where doping is required, is an alloy of silicon and hydrogen. The electronic-grade amorphous silicon is therefore called hydrogenated amorphous silicon (a-Si:H). 1 H.F. Sterling and R.C.G. Swann, Solid-State Electron. 8 (1965) p. 653-654. 2 W. Spear and P. -
Radiation-Thermodynamic Modelling and Simulating the Core of a Thermophotovoltaic System
energies Article Radiation-Thermodynamic Modelling and Simulating the Core of a Thermophotovoltaic System Chukwuma Ogbonnaya 1,2,* , Chamil Abeykoon 3, Adel Nasser 1 and Ali Turan 4 1 Department of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M60 1QD, UK; [email protected] 2 Faculty of Engineering and Technology, Alex Ekwueme Federal University, Ndufu Alike Ikwo, Abakaliki PMB 1010, Nigeria 3 Department of Materials, Aerospace Research Institute, The University of Manchester, Manchester M13 9PL, UK; [email protected] 4 Independent Researcher, Manchester M22 4ES, Lancashire, UK; [email protected] * Correspondence: [email protected]; Tel.: +44-016-1306-3712 Received: 31 October 2020; Accepted: 20 November 2020; Published: 23 November 2020 Abstract: Thermophotovoltaic (TPV) systems generate electricity without the limitations of radiation intermittency, which is the case in solar photovoltaic systems. As energy demands steadily increase, there is a need to improve the conversion dynamics of TPV systems. Consequently, this study proposes a novel radiation-thermodynamic model to gain insights into the thermodynamics of TPV systems. After validating the model, parametric studies were performed to study the dependence of power generation attributes on the radiator and PV cell temperatures. Our results indicated that a silicon-based photovoltaic (PV) module could produce a power density output, thermal losses, 2 2 and maximum voltage of 115.68 W cm− , 18.14 W cm− , and 36 V, respectively, at a radiator and PV cell temperature of 1800 K and 300 K. Power density output increased when the radiator temperature increased; however, the open circuit voltage degraded when the temperature of the TPV cells increased. -
The Pennsylvania State University the Graduate School Department
The Pennsylvania State University The Graduate School Department of Chemistry EFFICIENCY ENHANCEMENT IN DYE-SENSITIZED SOLAR CELLS THROUGH LIGHT MANIPULATION A Thesis in Chemistry by Neal M. Abrams © 2005 Neal M. Abrams Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy December 2005 ii The thesis of Neal M. Abrams was reviewed and approved* by the following: Thomas E. Mallouk DuPont Professor of Materials Chemistry and Physics Thesis Advisor Chair of Committee Karl T. Mueller Associate Professor of Chemistry Christine D. Keating Assistant Professor of Chemistry Vincent H. Crespi Professor of Physics Professor of Materials Science and Engineering Ayusman Sen Professor of Chemistry Head of the Department of Chemistry *Signatures are on file in the Graduate School iii ABSTRACT Solar energy conversion is dominated by expensive solid-state photovoltaic cells. As low-cost cells continue to develop, the dye sensitized solar cell has generated considerable interest as an efficient alternative. Although already moderately efficient, this cell offers numerous areas for improvement, both electronically and optically. Solar conversion efficiencies have been studied by modifying optical pathways through these dye-sensitized solar cells, or Grätzel cells. Monochromatic incident-to-photon current efficiency (IPCE) data reveals that an inverse opal photonic crystal or other disordered layer coupled to a nanocrystalline TiO2 layer enhances photocurrent efficiency by illumination from the counter electrode direction. Modifying the cell architecture to allow for illumination through the working electrode yields similar increased enhancements by proper selection of the photonic bandgap. Direct growth of TiO2 inverse opals on a nanocrystalline slab was accomplished by polymer infiltration of the slab, followed by crystal growth and liquid phase deposition. -
TFT Technology: Advancements and Opportunities for Improvement
FRONTLINE TECHNOLOGY TFT Technology: Advancements and Opportunities for Improvement For fat-panel display backplane applications, oxide TFT technology has transitioned from a disruptive challenger to a maturing com- petitor with respect to a-Si:H and LTPS. Here, we explore the most recent developments and the best options among the offerings. by John F. Wager COMMERCIAL FLAT-PANEL DISPLAY BACKPLANE OPTIONS that a smaller TFT can be used. A smaller TFT has less parasitc are currently limited to three thin-flm transistor (TFT) tech- capacitance, which further improves switching speed and also nologies: hydrogenated amorphous silicon (a-Si:H), low-tem- reduces power consumpton. It also leads to a higher aperture perature polysilicon (LTPS), and oxide.¹,² As Table 1 indicates, rato in an LCD display, thus reducing backlight power consump- each technology brings a trade-of. From the perspectve of ton. The higher on current of LTPS allows for peripheral circuit this simple blue thumbs-up (good), red thumbs-down (bad), integraton, thereby reducing the need to mount external silicon gray thumbs-sidewise (intermediate) ratng system, oxide TFTs ICs around the display edge for row and column driver functons. appear to come out on top. However, the true story is a bit These consideratons mean that LTPS is an optmal backplane more complicated. choice for small- and medium-sized mobile applicatons that Oxide is listed afer a-Si:H in Table 1, because a-Si:H and require high-resoluton displays. oxide propertes are more strongly correlated than those of Another distnguishing LTPS advantage is the availability of LTPS. This a-Si:H and oxide property correlaton occurs primarily complementary metal-oxide-semiconductor (CMOS) technology because of their common amorphous microstructure, in contra- that employs both n- and p-channel TFTs. -
High-Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology
July 1999 • NREL/SR-520-26648 High-Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology Annual Technical Progress Report 6 March 1998 — 5 March 1999 S. Guha United Solar Systems Corp. Troy, Michigan National Renewable Energy Laboratory 1617 Cole Boulevard Golden, Colorado 80401-3393 NREL is a U.S. Department of Energy Laboratory Operated by Midwest Research Institute ••• Battelle ••• Bechtel Contract No. DE-AC36-98-GO10337 July 1999 • NREL/SR-520-26648 High-Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology Annual Technical Progress Report 6 March 1998 — 5 March 1999 S. Guha United Solar Systems Corp. Troy, Michigan NREL Technical Monitor: K. Zweibel Prepared under Subcontract No. ZAK-8-17619-09 National Renewable Energy Laboratory 1617 Cole Boulevard Golden, Colorado 80401-3393 NREL is a U.S. Department of Energy Laboratory Operated by Midwest Research Institute ••• Battelle ••• Bechtel Contract No. DE-AC36-98-GO10337 NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or any agency thereof. -
Indium Gallium Arsenide Detectors
TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company Indium Gallium Arsenide Detectors Teledyne Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.teledynejudson.com 1/9 J22 and J23 Detector Operating Notes (0.8 to 2.6 µm) TELEDYNE JUDSON TECHNOLOGIES A Teledyne Technologies Company General Accessories The J22 and J23 series are high For a complete system, Teledyne Judson performance InGaAs detectors offers low noise transimpedance amp- operating over the spectral range lifier modules, heat sink/preamp assem- from 0.8µm to 2.6µm. These blies and temperature controllers. For detectors provide fast rise time, further details, please visit our uniformity of response, excellent website. sensitivity, and long term reliability for a wide range of applications. For Call us enhanced performance or temperature stability of response Let our team of application engineers near the cutoff wavelength, Teledyne assist you in selecting the best Judson offers a variety of thermoele detector design for your application. ctrically cooled detector options. Or visit our website for additional Applications information on all of Teledyne Judson’s products. Device Options · Gas analysis · NIR-FTIR Teledyne Judson’s standard InGaAs · Raman spectroscopy detectors, the J22 series, offers high · IR fluorescence reliability and performance in the · Blood analysis spectral range from 0.8 μm to 1.7μm. · Optical sorting In addition, the J23 series extended · Radiometry InGaAs detectors are available in · Chemical detection four cutoff options at 1.9μm, 2.2μm, · Optical communication 2.4μm and 2.6μm. Figure 1 shows the · Optical power monitoring typical response for the J22 and J23 · Laser diode monitoring series at room temperature operation. -
Nanowires Grown on Graphene Have Surprising Structure
Close Nanowires grown on graphene have surprising structure When a team of University of Illinois engineers set out to grow nanowires of a compound semiconductor on top of a sheet of graphene, they did not expect to discover a new paradigm of epitaxy. The self-assembled wires have a core of one composition and an outer layer of another, a desired trait for many advanced electronics applications. Led by professor Xiuling Li, in collaboration with professors Eric Pop and Joseph Lyding, all professors of electrical and computer engineering, the team published its findings in the journal Nano Letters. Nanowires, tiny strings of semiconductor material, have great potential for applications in transistors, solar cells, lasers, sensors and more. “Nanowires are really the major building blocks of future nano-devices,” said postdoctoral researcher Parsian Mohseni, first author of the study. “Nanowires are components that can be used, based on what material you grow them out of, for any functional electronics application.” A false-color microscope image of a single nanowire, showing the InAs core and InGaAs shell. | Graphic by Parsian Mohseni Li’s group uses a method called van der Waals epitaxy to grow nanowires from the bottom up on a flat substrate of semiconductor materials, such as silicon. The nanowires are made of a class of materials called III-V (three-five), compound semiconductors that hold particular promise for applications involving light, such as solar cells or lasers. The group previously reported growing III-V nanowires on silicon. While silicon is the most widely used material in devices, it has a number of shortcomings. -
Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration
ROYAL INSTITUTE OF TECHNOLOGY Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration Doctoral Thesis by Fredrik Olsson Laboratory of Semiconductor Materials School of Information and Communication Technology Royal Institute of Technology (KTH) Stockholm 2008 Selective epitaxy of indium phosphide and heteroepitaxy of indium phosphide on silicon for monolithic integration A dissertation submitted to the Royal Institute of Technology, Stockholm, Sweden, in partial fulfillment of the requirements for the degree of Doctor of Philosophy. TRITA-ICT/MAP AVH Report 2008:11 ISSN 1653-7610 ISRN KTH/ICT-MAP/AVH-2008:11-SE ISBN 978-91-7178-991-4 © Fredrik Olsson, June 2008 Printed by Universitetsservice US-AB, Stockholm 2008 Cover Picture: Microscopy photograph of RIE etched and HVPE regrown waveguide structures showing near to perfect planarization. ii Fredrik Olsson: Selective epitaxy of indium phosphide and heteroepitaxy of indium phosphide on silicon for monolithic integration TRITA-ICT/MAP AVH Report 2008:11, ISSN 1653-7610, ISRN KTH/ICT-MAP/AVH- 2008:11-SE, ISBN 978-91-7178-991-4 Royal Institute of Technology (KTH), School of Information and Communication Technology, Laboratory Semiconductor Materials Abstract A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. But it suffers from its slow signal transmission between the circuit boards and between the chips as it uses conventional electronic wire connections. This being the bottle-neck that hinders enhanced transmission speed, optical-interconnects in silicon have been the dream for several years. -
WO 2018/222569 Al 06 December 2018 (06.12.2018) W !P O PCT
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2018/222569 Al 06 December 2018 (06.12.2018) W !P O PCT (51) International Patent Classification: KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, C01B 3/00 (2006.01) MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (21) International Application Number: SC, SD, SE, SG, SK, SL, SM, ST, SV, SY,TH, TJ, TM, TN, PCT/US20 18/034842 TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (22) International Filing Date: (84) Designated States (unless otherwise indicated, for every 29 May 2018 (29.05.2018) kind of regional protection available): ARIPO (BW, GH, (25) Filing Language: English GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, (26) Publication Langi English TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, (30) Priority Data: EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 62/5 13,284 31 May 2017 (3 1.05.2017) US MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, 62/5 13,324 31 May 2017 (3 1.05.2017) US TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, 62/524,307 23 June 2017 (23.06.2017) US KM, ML, MR, NE, SN, TD, TG). -
Gaas, Inp, Ingaas, Gainp, P+-I-N+ Multiplication Measurements for Modeling of Semiconductor As Photo Detectors
IJACSA Special Issue on Selected Papers from International Conference & Workshop On Advance Computing 2013 GaAs, InP, InGaAs, GaInP, p+-i-n+ Multiplication measurements for Modeling of Semiconductor as photo detectors Sanjay.C.Patil B.K.Mishra (Research Scholar at NMIMS MUMBAI) Thakur College of Engineering and Technology, Parshvanath College of Engineering, THANE (W), Kandivali (E) Mumbai, 400101 India Mumbai, 400601 India Abstract—Optoelectronic is one of the thrust areas for the Group III on the periodic chart (arsenic in the case of GaAs) recent research activity. One of the key components of the and one from Group V (gallium in the case of GaAs). Other optoelectronic family is photo detector to be widely used in three-five (or III-V in Roman numerals) semiconductors broadband communication, optical computing, optical include indium phosphide and gallium nitride. transformer, optical control etc. Present paper includes the investigation. carried on the basis of the. Multiplication The band gap energy of semiconductors tends to decrease measurements on GaAs, InP, InGaAs, GaInP, p+-i-n+s with – with increasing temperature. When temperature increases, the region thicknesses, with investigation of applicability of the local amplitude of atomic vibrations increase, leading too larger ionization theory. A local ionization coefficient to be increasingly inters atomic spacing. In a regular semiconductor crystal, the unrepresentative of the position dependent values in the device as band gap is fixed owing to continuous energy states. In a is reduced below 1 um. quantum dot crystal, the band gap is size dependent and can be altered to produce a range of energies between the valence Keywords— Photo detectors; Impact ionization.